MAXIM MAX8563, MAX8564, MAX8564A User Manual
___________________________________
概述
MAX8563/MAX8564/MAX8564A
是超低输出电压、双路和
三路
LDO
控制器，广泛应用于主板、台式笔记本、笔记本
以及其它领域的负载点电压变换，灵活方便，成本低廉。
这些器件含有精度为
±1%的0.5V
基准电压源，可对输出电
压进行精密的调节。
MAX8563有3路n沟道MOSFET
控制
输出，
MAX8564/MAX8564A有2
路控制输出。
当
VDD= 12V
时，每路的控制器输出可在
0.5V至3.3V
之间
调节。
VDD=5V
时，每路控制器输出可在
0.5V至1.8V
之
间调节。各路输出可独立使能，并在输出电压达到设定电
压的
94%
时产生
POK
信号。每路输出都具有保护电路，当
输出电压跌落到低于设定电压的
80%
而且持续时间大于
50µs
时，欠压比较器禁止输出，对电路提供短路保护。对
于灾难性短路故障，当输出电压下降至低于设定电压的
60%
时，稳压器会被立即关断。
MAX8563
采用16引脚
QSOP
封装，
MAX8564/MAX8564A
采用10引脚
µMAX
®
封装。
___________________________________
应用
主板
双路/三路电源
台式笔记本和笔记本
图形卡
___________________________________
特性
♦
MAX8563：3
路输出
♦
MAX8564/MAX8564A：2
路输出
♦
±1%
的反馈调整率
♦
输出电压可低至
0.5V
♦
可使用陶瓷输出电容
♦
宽工作电压范围，可采用5V或
12V
电压供电
♦
独立使能控制，
POK
信号实现顺序上电
♦
对于短路故障提供过载保护
♦
欠压短路保护
♦
可驱动n沟道
MOSFET
MAX8563/MAX8564/MAX8564A
±1%
、超低输出电压、
双路和三路线性
n-FET
控制器
_______________________________
定购信息
19-3290; Rev 2; 6/06
可提供评估板
_________________________________________________________________________
典型工作电路
+
表示无铅封装。
引脚配置在数据资料的最后给出。
µMAX是Maxim Integrated Products, Inc.
的注册商标。
________________________________________________________________ Maxim Integrated Products 1
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翻译错误，如需确认任何词语的准确性，请参考 Maxim提供的英文版资料。
索取免费样品和最新版的数据资料，请访问Maxim的主页：www.maxim-ic.com.cn。
超低压差稳压器
低电压
DSP、µP
和
微控制器电源
OFF
ON
OFF
ON
OFF
ON
DRV1
FB1
EN1
POK1
GND
N.C.
DRV3
FB3
V
DD
DRV2
FB2
EN2
POK2
N.C.
POK3
EN3
MAX8563
1.8V ±5% IN
C1
C5
R2
R1
C4
OUT1
1.5V/1.5A
R3
Q1
POK1
3.3V ±5% IN
OUT3
2.5V/2A*
C9
C10
C8
Q3
R8
R7
R9
R6
R5
R4
C6
C2 C3
C7
Q2
OUT2
1.05V/3A
POK2
POK3
5V OR 12V
IN
1.2V ±5% IN
*2.5V OUTPUT ONLY WITH V
DD
= 12V
PART TEMP RANGE
MAX8563EEE -40°C to +85°C 16 QSOP E16-1
MAX8564EUB -40°C to +85°C 10 µMAX U10-2
MAX8564AEUB+ -40°C to +85°C 10 µMAX U10-2
PINPACKAGE
PKG
CODE
MAX8563/MAX8564/MAX8564A
±1%
、超低输出电压、
双路和三路线性
n-FET
控制器
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VDD= V
EN1
= V
EN2
= V
EN3
= 5V, V
GND
= 0V, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VDDto GND............................................................-0.3V to +14V
DRV1, DRV2, DRV3, EN1, EN2,
EN3 to GND............................................-0.3V to (V
DD
+ 0.3V)
FB1, FB2, FB3, POK1, POK2, POK3 to GND ...........-0.3V to +6V
Continuous Power Dissipation (T
A
= +70°C)
10-Pin µMAX (derate 5.6mW/°C above +70°C) ........444.4mW
16-Pin QSOP (derate 8.3mW/°C above +70°C)........666.7mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
GENERAL
VDD Voltage Range 4.5 13.2 V
VDD Undervoltage-Lockout Threshold Rising, 200mV hysteresis (typ) 3.56 3.76 4.00 V
VDD Quiescent Current
VDD Shutdown Current EN1 = EN2 = EN3 = GND, VDD = 12V 25 µA
LDOs
FB_ Accuracy
FB_ Input Bias Current
DRV_ Soft-Start Charging Current
DRV_ Max Sourcing Current V
DRV_ Max Sinking Current V
DRV_ Max Voltage
FB_ Slow Short-Circuit Threshold Measured at FB_ (falling) 400 mV
FB_ Fast Short-Circuit Threshold Measured at FB_ (falling) 300 mV
Slow Short-Circuit Timer 50 µs
FB_ to DRV_ Transconductance 0.115 0.24 0.460 Mho
LOGIC
EN_ Input Low Level 0.7 V
EN_ Input High Level 1.3 V
EN_ Input Leakage Current
PARAMETER CONDITIONS MIN TYP MAX UNITS
V
= VDD = 12V (MAX8563) 930 1600
EN_
= VDD = 12V (MAX8564/MAX8564A) 660 1200
V
EN_
TA = 0°C to +85°C 0.494 0.5 0.504
= -40°C to +85°C 0.489 0.509
T
A
TA = +25°C -100 +100
T
= +85°C -8
A
MAX8563, MAX8564 100
MAX8564A 10
= 0.45V
FB_
= 0.6V
FB_
VDD = 5V, V
= 13.2V, V
V
DD
V
= 0 and VDD,
EN_
V
= 13.2V
DD
FB_
TA = 0°C to +85°C 4
= -40°C to +85°C 3 7
T
A
TA = 0°C to +85°C 3
= -40°C to +85°C 1.8 7
T
A
= 0.46V 4.7
= 0.46V 8.0 10.9
FB_
TA = +25°C -0.1 +0.1
T
= +85°C 0.001
A
µA
V
nA
µA
mA
mA
V
µA
MAX8563/MAX8564/MAX8564A
±1%
、超低输出电压、
双路和三路线性
n-FET
控制器
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(VDD= V
EN1
= V
EN2
= V
EN3
= 5V, V
GND
= 0V, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1)
Note 1: Specifications are production tested at TA= +25°C. Maximum and minimum specifications over temperature are guaranteed by
design.
_________________________________________________________________
典型工作特性
(Circuit of Figure 1, TA = +25°C.)
OUTPUT VOLTAGE vs. INPUT VOLTAGE
MAX8563 toc01
INPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
1.91.81.71.61.51.41.31.21.1
1.1
1.2
1.3
1.4
1.5
1.6
1.0
1.0 2.0
VDD = 5V
V
OUT1
V
OUT2
OUTPUT VOLTAGE vs. INPUT VOLTAGE
MAX8563 toc02
INPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
3.41.4 2.2 2.61.8 3.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
1.0
1.0
VDD = 12V
V
OUT3
V
OUT1
V
OUT2
OUTPUT VOLTAGE vs. OUTPUT CURRENT
MAX8563 toc03
OUTPUT CURRENT (A)
OUTPUT VOLTAGE (V)
2.52.01.51.00.5
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
1.0
0 3.0
VDD = 12V
V
OUT3
V
OUT1
V
OUT2
FEEDBACK VOLTAGE
vs. TEMPERATURE
MAX8563 toc04
TEMPERATURE (°C)
FEEDBACK VOLTAGE (V)
603510-15
0.4988
0.4990
0.4992
0.4994
0.4996
0.4998
0.5000
0.4986
-40 85
VDD = 5V
VDD = 12V
PSRR vs. FREQUENCY
MAX8563 toc05
FREQUENCY (Hz)
PSRR (dB)
10k1k
10
30
40
20
50
60
70
80
90
100
0
100 100k
V
OUT1
= 1.5V
V
IN1
= 2V
LOAD = 1.25Ω
V
DD
= 12V
LOAD TRANSIENT
MAX8563 toc06
I
OUT2
V
DRV2
V
IN2
V
OUT2
20mV/div
AC-COUPLED
2V/div
200mV/div
AC-COUPLED
2A/div
0
10µs/div
0
VDD = 12V
FIGURE 1, C7 = 100µF 6TPE100MI
POK_ Threshold Falling Measured at FB_ (falling) 425 440 455 mV
POK_ Threshold Rising at Startup Measured at FB_ (rising) 455 470 485 mV
POK_ Output Low Level Sinking 1mA, VDD = 4.5V, V
POK_ Output High Leakage VDD = 5.5V
PARAMETER CONDITIONS MIN TYP MAX UNITS
= 0.4V 0.1 V
FB_
TA = +25°C 0.1
= +85°C 0.001
T
A
µA
____________________________________________________________________
典型工作特性(续
)
(Circuit of Figure 1, TA = +25°C.)
MAX8563/MAX8564/MAX8564A
±1%
、超低输出电压、
双路和三路线性
n-FET
控制器
4 _______________________________________________________________________________________
POWER-ON SEQUENCING WITH V
V
DD
V
OUT1
V
IN1
V
POK1
20ms/div
ENABLE-ON SEQUENCING
V
IN1
V
EN1
OUT1
DD
MAX8563 toc07
MAX8563 toc09
20V/div
0
2V/div
0
2V/div
0
2V/div
0
2V/div
0
2V/div
0
2V/div
0
POWER-ON SEQUENCING WITH V
V
DD
V
IN1
V
OUT1
V
POK1
SHORT-CIRCUIT PROTECTION
I
OUT1
V
OUT1
ENABLE CONFIGURED AS
SHOWN IN FIGURE 4
RD = 100kΩ, RE = 4kΩ
10ms/div
IN
MAX8563 toc08
20V/div
0
2V/div
0
2V/div
0
2V/div
0
MAX8563 toc10
5A/div
0
1V/div
0
V
POK1
2V/div
0
20ms/div
V
DRV1
20µs/div
2V/div
0
MAX8563/MAX8564/MAX8564A
±1%
、超低输出电压、
双路和三路线性
n-FET
控制器
_______________________________________________________________________________________ 5
_____________________________________________________________________
功能框图
______________________________________________________________________
引脚说明
引脚
名称
功能
n-MOSFET
驱动输出端。驱动外部n沟道
MOSFET
的栅极，对第1路输出进行调节。
EN1
为逻辑
低电平时，
DRV1
在内部被拉至地。该引脚外部串联一个RC电路用于补偿。参见
稳定补偿
部分。
输出1的反馈输入端。该引脚与第1路输出和
GND
间的电阻分压器的中点相连，设定第1路输出
电压。反馈调节电压为
0.500V
。参见
输出电压设置
部分。
第1路输出的使能控制端。该引脚为逻辑高电平时第1路输出工作，该引脚为逻辑低电平时第1路
输出禁止。该引脚接
V
DD
时第1路输出始终处于工作状态。
第1路输出的电源就绪状态指示端。当第1路输出低于标称稳压值的
12%
时，漏极开路输出拉低。
地。
第2路输出的电源就绪状态指示端。当第2路输出低于标称稳压值的
12%
时，漏极开路输出拉低。
无内部连接。
V
DD
VL
0.5V
REF
GND
V
DD
EN1
POK1
EN2
POK2
EN3
POK3 FB3
VL
POK
COMPARATOR
0.5V
UVLO
MAX8563
MAX8564
MAX8564A
GM
CONTROLLER 1
CONTROLLER 2
CONTROLLER 3
V
DD
DRV1
FB1
LDO
DRV2
LDO
FB2
DRV3
LDO
MAX8563
1 DRV1 DRV1
2FB1 FB1
3 EN1 EN1
4 POK1 POK1
5 GND GND
6
N.C. —
MAX8564/
MAX8564A
—POK2
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