________________________________
概述
MAX8553为 4.5V至 28V输入、同步降压型控制器,为
DDR存储器提供完整的电源管理方案。 MAX8553为 VTT
和 VTTR提供 1/2 V
REFIN
电压。VTT 和 VTTR 跟踪电压保
持在1% 的1/2 V
REFIN
范围内。MAX8554 为 4.5V 至28V 输
入、非跟踪降压型控制器,具有极低的0.6V 反馈门限电压。
MAX8553/MAX8554 采用Maxim 专有的Quick-PWMTM结
构,以提供快速的瞬态响应并工作于可选的伪固定频率。
这两个控制器工作时无须外部偏置电源。
该类控制器工作于同步整流模式,以保证高达25A 的平衡
源出电流和吸流能力。MAX8553/MAX8554 能够提供高
达95% 的效率,非常适合服务器和负载点应用。另外,
极低的5µ A 关断电流使笔记本电脑应用中的电池寿命更
长。无损耗电流监测是通过监视低端MOSFET 的漏源电
压实现的。MAX8553/MAX8554 具有可调的折返电流限
制,以承受连续的输出过载和短路。数字式软启动提供
上电时对浪涌电流的控制。过压保护关断转换器并将输
出电容放电。MAX8553/MAX8554 采用节省空间的16 引
脚QSOP 封装。
________________________________
应用
宽输入电源
服务器和存储系统应用
ASIC 和CPU 核电源
笔记本和LCD-PC 电源
DDR I和 DDR II存储器电源
AGTL总线端接电源
________________________________
特性
♦ 高达25A 的输出电流
♦ Quick-PWM 控制结构提供快速的环路响应
♦ 高达95% 的效率
♦ 4.5V 至28V 输入电压范围
♦ 无需外部偏置电源
♦ 0至 3.6V输入 REFIN电压范围 (MAX8553)
♦ 自动设置VTT 和VTTR 至±1% 精度的
1/2 V
REFIN
- (MAX8553)
♦ 极低的0.6V 反馈门限电压(MAX8554)
♦ 200kHz/300kHz/400kHz/550kHz 可选开关频率
♦ 可调的折返电流限制
♦ 过压保护
♦ 数字软启动
MAX8553/MAX8554
4.5V至28V输入、同步PWM降压控制器,
适合于DDR端接以及负载点应用
________________________________________________________________ Maxim Integrated Products 1
____________________________
定购信息
MAX8553
DH
EN/HSD
+5V
POK
VIN
VOUT
VTTR
V+
REFIN
LX
DL
VTTR GND
POK
REFIN
VL
BST
V+
REF
ILIM
FSEL
PGND
VTT
PART TEMP RANGE PIN-PACKAGE
MAX8553EEE -40° C to +85° C 16 QSOP
MAX8554EEE -40° C to +85° C 16 QSOP
_________________________
典型工作电路
19-3017; Rev 1; 5/05
本文是
Maxim
正式英文资料的译文,
Maxim
不对翻译中存在的差异或由此产生的错误负责。请注意译文中可能存在文字组织或
翻译错误,如需确认任何词语的准确性,请参考
Maxim
提供的英文版资料。
索取免费样品和最新版的数据资料,请访问
Maxim
的主页:
www.maxim-ic.com.cn
。
引脚配置在数据资料的最后给出。
Quick-PWM是Maxim Integrated Products, Inc.
的商标。
MAX8553/MAX8554
4.5V至28V输入、同步PWM降压控制器,
适合于DDR端接以及负载点应用
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VV+= V
HSD
= +12V, V
EN/HSD
= V
REFIN
= +2.5V, VEN= +5V, C
VL
= 4.7µF, C
VTTR
= 1µF, C
REF
= 0.22µF, V
FSEL
= 0V, ILIM = VL,
PGND = LX = GND, BST = VL, T
A
= 0°C to +85°C. Typical values are at T A= +25°C, unless otherwise specified.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
V+, EN/HSD, EN, HSD to GND...............................-0.3V to +30V
PGND to GND .......................................................-0.3V to +0.3V
VTT, REFIN, POK, OUT, FB, VL to GND...................-0.3V to +6V
REF, VTTR, DL, ILIM, FSEL to GND ............-0.3V to (V
VL
+ 0.3V)
LX to PGND ...............................................................-2V to +30V
BST to GND ............................................................-0.3V to +36V
DH to LX ...................................................................-0.3V to +6V
LX to BST..................................................................-6V to +0.3V
REF Short Circuit to GND ...........................................Continuous
Continuous Power Dissipation (T
A
= +70° C)
16-Pin QSOP (derated 8.3mW/°C above +70° C) ........667mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
V+ Input Voltage Range VL not connected to V+ 6 28 V
V+ Input Voltage Range VL connected to V+ 4.5 5.5 V
EN/HSD Input Voltage Range MAX8553 enabled 1.5 28.0 V
EN Input Voltage Range MAX8554 enabled 1.5 28.0 V
EN Input Current 23µ A
HSD Input Voltage Range MAX8554 enabled 1.5 28.0 V
HSD Input Current 20 40 µA
REFIN Input Voltage Range 0 3.6 V
V+ Supply Current (MAX8553) V
V+ Supply Current (MAX8554) V
REFIN Supply Current 125 250 µA
EN/HSD Supply Current 51 0µ A
VL Supply Current V
V+ Shutdown Supply Current EN/HSD = GND 3 5 µA
REFIN Shutdown Supply Current EN/HSD = GND 1 µA
VL Shutdown Supply Current V
VL Undervoltage-Lockout Threshold Rising edge, typical hysteresis = 40mV 4.05 4.25 4.40 V
VTT
VTT Input Bias Current V
VTT Feedback Voltage Range 0 1.8 V
VTT Feedback Voltage Accuracy
FB Input Bias Current MAX8554, V
PARAMETER CONDITIONS MIN TYP MAX UNITS
= +1.35V 0.8 1.2 mA
VTT
= 630mV 0.62 0.90 mA
FB
= V
VL
VL
VTT
V
REFIN
V
REFIN
= 5.5V, V
V+
= V
= +5.5V, V
V+
= +1.25V -0.15 0 µA
= V
EN/HSD
= V
EN/HSD
VTT
EN/HSD
= +1.8V 49.5 50 50.5
= +3.6V 49.5 50 50.5
= +600mV -0.15 0 µA
FB
= +1.35V 0.8 1.2 mA
= 0V 5 12 µA
% V
RE FIN
MAX8553/MAX8554
4.5V至28V输入、同步PWM降压控制器,
适合于DDR端接以及负载点应用
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(VV+= V
HSD
= +12V, V
EN/HSD
= V
REFIN
= +2.5V, VEN= +5V, C
VL
= 4.7µF, C
VTTR
= 1µF, C
REF
= 0.22µF, V
FSEL
= 0V, ILIM = VL,
PGND = LX = GND, BST = VL, T
A
= 0°C to +85°C. Typical values are at T A= +25°C, unless otherwise specified.)
FB Regulation Voltage MAX8554, V
Output Adjust Range MAX8554 (Note 1) 0.6 3.5 V
VTT Line Regulation V
FB Line Regulation
VTT Load Regulation 0 < I
FB Load Regulation
REFERENCE
Reference Output Voltage V
Reference Load Regulation V
Reference UVLO V
VTTR
VTTR Output Voltage Range 0 1.8 V
VTTR Output Accuracy
PARAMETER CONDITIONS MIN TYP MAX UNITS
= +2.5V, FSEL unconnected 0.598 0.607 0.616 V
OUT
±10%, V
EN/HSD
MAX8554, V
I
OUT
MAX8554, 0 < I
FSEL unconnected
V+
V+
V+
I
VTTR
I
VTTR
I
VTTR
HSD
= 0A, FSEL unconnected
< +7A, V
OUT
= V
= +4.5 to +5.5V, I
VL
= V
= +5V, I
VL
= V
= +5V, reference rising, hysteresis = 27mV 1.5 1.6 1.7 V
VL
= -5mA to +5mA 49.5 50 50.5
= -25mA to +25mA, V
= -25mA to +25mA, V
VTT
±10%, V
VTT
< +7A, V
OUT
REF
= +1.25V, I
= 0A ±0.325 %
OUT
= +2.5V,
OUT
= +1.25V 0.2 %
= +2.5V,
OUT
= 0 1.97 2.00 2.03 V
REF
= 0 to 50µA 10 mV
= +1.8V 49 50 51
REFIN
= +3.6V 49.5 50 50.5
REFIN
±0.325 %
0.2 %
% V
Thermal Shutdown Rising temperature, typical hysteresis = 15°C +160 °C
SOFT-START
ILIM Ramp Period
Output Predischarge Period
OSCILLATOR
Ramps the ILIM trip threshold from 20% to 100% in
20% increments
Rising edge of EN/HSD to the start of internal digital
soft-start
0.8
0.8
1.7 3.0 ms
1.7 3.0 ms
FSEL = VL 200
Oscillator Frequency
FSEL = unconnected 300
FSEL = REF 400
FSEL = GND 550
FSEL = VL 2.18 2.5 2.83
On-Time
MAX8553, V
(Note 2)
VTT
= +1.25V
FSEL unconnected 1.45 1.67 1.89
FSEL = REF 1.09 1.25 1.41
FSEL = GND 0.82 0.91 1.00
FSEL = VL 0.89 1.02 1.16
On-Time
MAX8554, V
(Note 2)
OUT
= +2.5V
FSEL unconnected 0.61 0.71 0.80
FSEL = REF 0.43 0.49 0.56
FSEL = GND 0.33 0.37 0.41
Off-Time (Note 2) 350 400 ns
RE FIN
kHz
µs
µs
MAX8553/MAX8554
4.5V至28V输入、同步PWM降压控制器,
适合于DDR端接以及负载点应用
4 _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(VV+= V
HSD
= +12V, V
EN/HSD
= V
REFIN
= +2.5V, VEN= +5V, C
VL
= 4.7µF, C
VTTR
= 1µF, C
REF
= 0.22µF, V
FSEL
= 0V, ILIM = VL,
PGND = LX = GND, BST = VL, T
A
= 0°C to +85°C. Typical values are at T A= +25°C, unless otherwise specified.)
CURRENT LIMIT
Current-Limit Threshold (Positive
Direction)
Current-Limit Threshold (Negative
Direction)
ILIM Input Current 5µ A
FAULT DETECTION
VL REGULATOR
Output Voltage +6V < V
Line Regulation +6V < V
RMS Output Current 35 mA
Bypass Capacitor ESR < 100mΩ 2.2 µF
DRIVER
DH Gate-Driver On-Resistance V
DL Gate-Driver On-Resistance
(Source)
DL Gate-Driver On-Resistance
(Sink)
Dead Time
FSEL LOGIC
Logic Input Current -3 +3 µA
Logic Low (GND) 0.5 V
Logic REF Level FSEL = REF 1.65 2.35 V
Logic Float Level FSEL unconnected 3.15 3.85 V
Logic VL Level FSEL = VL VVL - 0.4 V
EN/HSD OR EN LOGIC
EN/HSD or EN Shutdown Current Max I
Logic High V
Logic Low V
PARAMETER CONDITIONS MIN TYP MAX UNITS
LX to PGND, ILIM = VL 80 100 115
LX to PGND, R
LX to PGND, R
LX to PGND, ILIM = VL, with respect to positive
current-limit threshold
MAX8553 (V
MAX8553 (V
MAX8554 0.696 0.720 0.744
V+
V+
- V
BST
DL high state 1.6 3.0 Ω
DL low state 0.75 1.25 Ω
DL rising 32
DL falling 30
VL
VL
= +5V 1.4 2.5 Ω
LX
EN/HSD
= V
= +4.5 to +5.5V, 100mV hysteresis 1.5 V
V+
= V
= +4.5 to +5.5V 0.8 V
V+
= 100kΩ 35 50 65
ILIM
= 400kΩ 160 200 230
ILIM
> +1V) 57 60 63 % V
REFIN
≤ +1V) 0.576 0.600 0.624 Overvoltage Threshold
REFIN
<+28V, 1mA < I
< +28V, IVL = 10mA 0.2 %
for V
EN/HSD
< 35mA 4.80 5.0 5.33 V
VL
< +0.8V or VEN < +0.8V 0.5 3.0 µA
-130 -110 -90 %
mV
RE FIN
V
ns
MAX8553/MAX8554
4.5V至28V输入、同步PWM降压控制器,
适合于DDR端接以及负载点应用
_______________________________________________________________________________________ 5
ELECTRICAL CHARACTERISTICS (continued)
(VV+= V
HSD
= +12V, V
EN/HSD
= V
REFIN
= +2.5V, VEN= +5V, C
VL
= 4.7µF, C
VTTR
= 1µF, C
REF
= 0.22µF, V
FSEL
= 0V, ILIM = VL,
PGND = LX = GND, BST = VL, T
A
= 0°C to +85°C. Typical values are at T A= +25°C, unless otherwise specified.)
ELECTRICAL CHARACTERISTICS
(V
V+
= V
HSD
= +12V, V
EN/HSD
= V
REFIN
= +2.5V, V
EN
= +5V, C
VL
= 4.7µF, C
VTTR
= 1µF, C
REF
= 0.22µF, V
FSEL
= 0, ILIM = VL, PGND
= LX = POK = GND, BST = VL, T
A
= -40°C to +85°C, unless otherwise specified.) (Note 3)
POWER-OK OUTPUT
Upper VTT and VTTR Threshold MAX8553 55 56 57 % V
Lower VTT and VTTR Threshold MAX8553 43 44 45 % V
Upper Threshold MAX8554 0.646 0.672 0.698 V
Lower Threshold MAX8554 0.504 0.528 0.552 V
POK Output Low Level I
POK Output High Leakage V
PARAMETER CONDITIONS MIN TYP MAX UNITS
= 2mA 0.4 V
SINK
= +5V 5 µA
POK
RE FIN
RE FIN
V+ Input Voltage Range VL not connected to V+ 6 28 V
V+ Input Voltage Range VL connected to V+ 4.5 5.5 V
EN/HSD Input Voltage Range MAX8553 enabled 1.5 28.0 V
EN Input Voltage Range MAX8554 enabled 1.5 28.0 V
EN Input Current 3µ A
HSD Input Voltage Range MAX8554 enabled 1.5 28.0 V
HSD Input Current 40 µA
REFIN Input Voltage Range 0 3.6 V
V+ Supply Current (MAX8553) V
V+ Supply Current (MAX8554) V
REFIN Supply Current 250 µA
EN/HSD Supply Current 10 µA
VL Supply Current V
V+ Shutdown Supply Current EN/HSD = GND 5 µA
REFIN Shutdown Supply Current EN/HSD = GND 1 µA
VL Shutdown Supply Current V
VL Undervoltage-Lockout Threshold Rising edge, typical hysteresis = 40mV 4.05 4.40 V
VTT
VTT Input Bias Current V
VTT Feedback Voltage Range 0 1.8 V
VTT Feedback Voltage Accuracy
FB Input Bias Current MAX8554, V
FB Regulation Voltage MAX8554, V
Output Adjust Range MAX8554 (Note 1) 0.6 3.5 V
PARAMETER CONDITIONS MIN MAX UNITS
= +1.35V 1.2 mA
VTT
= 630mV 0.90 mA
FB
= VV+ = 5.5V, V
VL
= V
VL
VTT
V
REFIN
V
REFIN
= +5.5V, V
V+
= +1.25V -0.2 0 µA
= V
EN/HSD
= V
EN/HSD
= +600mV -0.2 0 µA
FB
OUT
= +1.35V 1.2 mA
VTT
= 0V 12 µA
EN/HSD
= +1.8V 49.5 50.5
= +3.6V 49.5 50.5
= +2.5V, FSEL unconnected 0.598 0.616 V
% V
RE FIN
MAX8553/MAX8554
4.5V至28V输入、同步PWM降压控制器,
适合于DDR端接以及负载点应用
6 _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(V
V+
= V
HSD
= +12V, V
EN/HSD
= V
REFIN
= +2.5V, V
EN
= +5V, C
VL
= 4.7µF, C
VTTR
= 1µF, C
REF
= 0.22µF, V
FSEL
= 0, ILIM = VL, PGND
= LX = POK = GND, BST = VL, T
A
= -40°C to +85°C, unless otherwise specified.) (Note 3)
REFERENCE
Reference Output Voltage V
Reference Load Regulation V
Reference UVLO V
VTTR
VTTR Output Voltage Range 0 1.8 V
SOFT-START
ILIM Ramp Period
Output Predischarge Period
OSCILLATOR
On-Time
On-Time
Off-Time (Note 2) 420 ns
CURRENT LIMIT
Current-Limit Threshold (Positive
Direction)
Current-Limit Threshold (Negative
Direction)
ILIM Input Current µA
FAULT DETECTION
Overvoltage Threshold
VL REGULATOR
Output Voltage +6V < V
RMS Output Current 35 mA
Bypass Capacitor ESR < 100mΩ 2.2 µF
PARAMETER CONDITIONS MIN MAX UNITS
= V
V+
= V
V+
= V
V+
I
= -5mA to +5mA 49.5 50.5
VTTR
I
= -25mA to +25mA, V
VTTR
I
= -25mA to +25mA, V
VTTR
= +4.5 to +5.5V, I
VL
= +5V, I
VL
VL
REF
= +5V, reference rising, hysteresis = 27mV 1.5 1.7 V
REF
= 0 to 50µA 10 mV
REFIN
REFIN
= 0 1.97 2.03 V
= +1.8V 49 51 VTTR Output Accuracy
= +3.6V 49.5 50.5
Ramps the ILIM trip threshold from 20% to 100% in
20% increments
Rising edge of EN/HSD to the start of internal digital
soft-start
0.8
0.8
3.0 ms
3.0 ms
FSEL = VL 2.18 2.83
MAX8553, V
(Note 2)
VTT
= +1.25V
FSEL unconnected 1.45 1.89
FSEL = REF 1.09 1.41
FSEL = GND 0.82 1.00
FSEL = VL 0.89 1.16
MAX8554, V
(Note 2)
OUT
= +2.5V
FSEL unconnected 0.61 0.80
FSEL = REF 0.43 0.56
FSEL = GND 0.33 0.41
LX to PGND, ILIM = VL 80 115
LX to PGND, R
LX to PGND, R
LX to PGND, ILIM = VL, with respect to positive
current-limit threshold
MAX8553 (V
MAX8553 (V
MAX8554 0.696 0.744
V+
= 100kΩ 30 65
ILIM
= 400kΩ 150 230
ILIM
-130 -90 %
> +1V) 57 63
REFIN
≤ +1V) 0.576 0.624
REFIN
< +28V, 1mA < I
< 35mA 4.80 5.33 V
VL
% V
RE FIN
µs
µs
mV
%
V
MAX8553/MAX8554
4.5V至28V输入、同步PWM降压控制器,
适合于DDR端接以及负载点应用
_______________________________________________________________________________________ 7
ELECTRICAL CHARACTERISTICS (continued)
(V
V+
= V
HSD
= +12V, V
EN/HSD
= V
REFIN
= +2.5V, V
EN
= +5V, C
VL
= 4.7µF, C
VTTR
= 1µF, C
REF
= 0.22µF, V
FSEL
= 0, ILIM = VL, PGND
= LX = POK = GND, BST = VL, T
A
= -40°C to +85°C, unless otherwise specified.) (Note 3)
Note 1: Consult factory for applications that require higher than 3.5V output.
Note 2: On-time and off-time specifications are measured from 50% point to 50% point at the DH pin with LX forced to 0V, BST
forced to 5V, and a 250pF capacitor connected from DH to LX. Actual in-circuit times may differ due to MOSFET switching
speeds.
Note 3: Specifications to -40° C are guaranteed by design and are not production tested.
DRIVER
DH Gate-Driver On-Resistance V
DL Gate-Driver On-Resistance
(Source)
DL Gate-Driver On-Resistance
(Sink)
FSEL LOGIC
Logic Input Current -3 +3 µA
Logic Low (GND) 0.5 V
Logic REF Level FSEL = REF 1.65 2.35 V
Logic Float Level FSEL unconnected 3.15 3.85 V
Logic VL Level FSEL = VL V
EN/HSD OR EN LOGIC
EN/HSD or EN Shutdown Current Max I
Logic High V
Logic Low V
POWER-OK OUTPUT
Upper VTT, and VTTR Threshold MAX8553 55 57 % V
Lower VTT, and VTTR Threshold MAX8553 43 45 % V
Upper Threshold MAX8554 0.646 0.698 V
Lower Threshold MAX8554 0.504 0.552 V
POK Output Low Level I
POK Output High Leakage V
PARAMETER CONDITIONS MIN MAX UNITS
- V
BST
DL high state 3.0 Ω
DL low state 1.25 Ω
EN/HSD
= V
VL
= V
VL
= 2mA 0.4 V
SINK
= +5V 5 µA
POK
= +5V 2.5 Ω
LX
for V
EN/HSD
= +4.5 to +5.5V, 100mV hysteresis 1.5 V
V+
= +4.5 to +5.5V 0.8 V
V+
< +0.8V or VEN < +0.8V 0.5 3.0 µA
- 0.4 V
VL
RE FIN
RE FIN
1.19
1.23
1.21
1.27
1.25
1.29
1.31
04 26 8
LOAD REGULATION
(CIRCUIT OF FIGURE 2)
MAX8553/4 toc09
LOAD CURRENT (A)
OUTPUT VOLTAGE (V)
VTT CONNECTED AS
SHOWN IN FIGURE 2
VTT CONNECTED
TO THE OUTPUT
MAX8553/MAX8554
4.5V至28V输入、同步PWM降压控制器,
适合于DDR端接以及负载点应用
8 _______________________________________________________________________________________
_________________________________________________________________
典型工作特性
(V
V+
= 12V, V
OUT
= 1.8V, circuit of Figure 1, TA = +25° C, unless otherwise noted.)
100
30
0.1 1.0 10.0
EFFICIENCY vs. LOAD CURRENT
(CIRCUIT OF FIGURE 2)
60
MAX8553/4 toc01
LOAD CURRENT (A)
EFFICIENCY (%)
70
40
50
80
90
VIN = 1.8V
V
OUT
= 0.9V
VIN = 2.5V
V
OUT
= 1.25V
0.1 10.0 100.0
EFFICIENCY vs. LOAD CURRENT
(CIRCUIT OF FIGURE 1)
MAX8553/4 toc02
LOAD CURRENT (A)
EFFICIENCY (%)
1.0
100
30
40
50
60
70
90
80
V
OUT
= 1.8V
V
OUT
= 2.5V
400
450
550
500
600
650
-8 -4 -2 - 6 02468
SWITCHING FREQUENCY vs.
OUTPUT CURRENT (CIRCUIT OF FIGURE 2)
MAX8553/4 toc03
OUTPUT CURRENT (A)
SWITCHING FREQUENCY (kHz)
200
240
220
280
260
300
320
6 8 10 12 14 16 18 20 22 24 26 28
SWITCHING FREQUENCY
vs. INPUT VOLTAGE (CIRCUIT OF FIGURE 3)
MAX8553/4 toc04
INPUT VOLTAGE (V)
SWITCHING FREQUENCY (kHz)
160
180
170
200
190
210
220
-40 -15 10 35 60 85
FREQUENCY vs. TEMPERATURE
MAX8553/4 toc05
TEMPERATURE (°C)
FREQUENCY (kHz)
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.5
5.0
4 8 12 16 20 24 28
MAX8554 SHUTDOWN SUPPLY CURRENT
vs. INPUT VOLTAGE
MAX8553/4 toc06
INPUT VOLTAGE (V)
SHUTDOWN SUPPLY CURRENT (μ A)
V+ = HSD, EN = GND
0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4.5
5.0
4 8 12 16 20 24 28
MAX8553 SHUTDOWN SUPPLY CURRENT
vs. INPUT VOLTAGE
MAX8553/4 toc07
INPUT VOLTAGE (V)
SHUTDOWN SUPPLY CURRENT (μ A)
EN = GND
1.74
1.78
1.76
1.82
1.80
1.84
1.86
0 4.0 8.0 12.0 16.0 20.0
LOAD REGULATION
(CIRCUIT OF FIGURE 1)
MAX8553/4 toc08
LOAD CURRENT (A)
OUTPUT VOLTAGE (V)