VTTR Output Capacitor Selection (LDO)
The VTTR buffer is a scaled-down version of the VTT
regulator, with much smaller output transconductance.
Its compensation cap can therefore be smaller, and its
ESR larger, than what is required for its larger counterpart. For typical applications requiring load current up
to ±20mA, a ceramic cap with a minimum value of 1µF
is recommended (R
ESR
< 0.3Ω). Connect this cap
between VTTR and the analog ground plane.
VTTI Input Capacitor Selection (LDO)
Both the VTT and VTTR output stages are powered
from the same VTTI input. Their output voltages are referenced to the same REFIN input. The value of the VTTI
bypass capacitor is chosen to limit the amount of ripple/noise at VTTI, or the amount of voltage dip during a
load transient. Typically VTTI is connected to the output
of the buck regulator, which already has a large bulk
capacitor. Nevertheless, a ceramic capacitor of at least
10µF must be used and must be added and placed as
close as possible to the VTTI pin. This value must be
increased with larger load current, or if the trace from
the VTTI pin to the power source is long and has significant impedance. Furthermore, to prevent undesirable
VTTI bounce from coupling back to the REFIN input
and possibly causing instability in the loop, the REFIN
pin should ideally tap its signal from a separate lowimpedance DC source rather than directly from the
VTTI input. If the latter is unavoidable, increase the
amount of bypass capacitance at the VTTI input and
add additional bypass at the REFIN pin.
MOSFET Selection (Buck)
The MAX8550/MAX8551 drive external, logic-level, Nchannel MOSFETs as the circuit-switch elements. The
key selection parameters:
On-resistance (R
DS(ON)
): the lower, the better.
Maximum drain-to-source voltage (V
DSS
): should be
at least 20% higher than input supply rail at the highside MOSFET’s drain.
Gate charges (QG, QGD, QGS): the lower the better.
Choose MOSFETs with rated R
DS(ON)
at VGS= 4.5V.
For a good compromise between efficiency and cost,
choose the high-side MOSFET that has a conduction
loss equal to its switching loss at nominal input voltage
and maximum output current (see below). For the lowside MOSFET, make sure that it does not spuriously
turn on because of dV/dt caused by the high-side
MOSFET turning on, as this results in shoot-through
current degrading efficiency. MOSFETs with a lower
QGDto QGSratio have higher immunity to dV/dt.
For proper thermal-management design, calculate the
power dissipation at the desired maximum operating
junction temperature, maximum output current, and
worst-case input voltage. For the low-side MOSFET, the
worst case is at V
IN(MAX)
. For the high-side MOSFET,
the worst case could be at either V
IN(MIN)
or V
IN(MAX)
.
The high-side MOSFET and low-side MOSFET have different loss components due to the circuit operation.
The low-side MOSFET operates as a zero-voltage
switch; therefore, major losses are:
• The channel-conduction loss (P
LSCC
)
• The body-diode conduction loss (P
LSDC
)
• The gate-drive loss (P
LSDR
):
Use R
DS(ON)
at T
J(MAX)
:
where VFis the body-diode forward-voltage drop, tDTis
the dead time (≈30ns), and fSWis the switching frequency. Because of the zero-voltage switch operation,
the low-side MOSFET gate-drive loss occurs as a result
of charging and discharging the input capacitance,
(C
ISS
). This loss is distributed among the average DL
gate-driver’s pullup and pulldown resistance, R
DL
(≈1Ω), and the internal gate resistance (R
GATE
) of the
MOSFET (≈2Ω). The drive power dissipated is given by:
The high-side MOSFET operates as a duty-cycle control
switch and has the following major losses:
• The channel-conduction loss (P
HSCC
)
• The VI overlapping switching loss (P
HSSW
)
• The drive loss (P
HSDR
)
(The high-side MOSFET does not have body-diode
conduction loss because the diode never conducts
current):
Use R
DS(ON)
at T
J(MAX)
: