MAXIM MAX5062, MAX5063, MAX5064 User Manual

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

General Description

The MAX5062/MAX5063/MAX5064 high-frequency,
125V half-bridge, n-channel MOSFET drivers drive high­and low-side MOSFETs in high-voltage applications.
These drivers are independently controlled and their
35ns typical propagation delay, from input to output, are
matched to within 3ns (typ). The high-voltage operation
with very low and matched propagation delay between
drivers, and high source/sink current capabilities in a
thermally enhanced package make these devices suit­able for the high-power, high-frequency telecom power
converters. The 125V maximum input voltage range pro­vides plenty of margin over the 100V input transient
requirement of telecom standards. A reliable on-chip
bootstrap diode connected between V

DD

and BST elimi-

nates the need for an external discrete diode.

The MAX5062A/C and the MAX5063A/C offer both nonin­verting drivers (see the Selector Guide). The
MAX5062B/D and the MAX5063B/D offer a noninverting
high-side driver and an inverting low-side driver. The
MAX5064A/B offer two inputs per driver that can be
either inverting or noninverting. The MAX5062A/B/C/D
and the MAX5064A feature CMOS (V

DD

/ 2) logic inputs.
The MAX5063A/B/C/D and the MAX5064B feature TTL
logic inputs. The MAX5064A/B include a break-before­make adjustment input that sets the dead time between
drivers from 16ns to 95ns. The drivers are available in the
industry-standard 8-pin SO footprint and pin configura­tion, and a thermally enhanced 8-pin SO and 12-pin
(4mm x 4mm) thin QFN packages. All devices operate
over the -40°C to +125°C automotive temperature range.

Applications

Telecom Half-Bridge Power Supplies

Two-Switch Forward Converters

Full-Bridge Converters

Active-Clamp Forward Converters

Power-Supply Modules

Motor Control

Features

♦ HIP2100/HIP2101 Pin Compatible (MAX5062A/

MAX5063A)

♦ Up to 125V Input Operation
♦ 8V to 12.6V V

DD

Input Voltage Range

♦ 2A Peak Source and Sink Current Drive Capability
♦ 35ns Typical Propagation Delay
♦ Guaranteed 8ns Propagation Delay Matching

Between Drivers

♦ Programmable Break-Before-Make Timing

(MAX5064)

♦ Up to 1MHz Combined Switching Frequency while

Driving 100nC Gate Charge (MAX5064)

♦ Available in CMOS (V

DD

/ 2) or TTL Logic-Level

Inputs with Hysteresis

♦ Up to 15V Logic Inputs Independent of Input

Voltage

♦ Low 2.5pF Input Capacitance
♦ Instant Turn-Off of Drivers During Fault or PWM

Start-Stop Synchronization (MAX5064)

♦ Low 200µA Supply Current
♦ Versions Available With Combination of

Noninverting and Inverting Drivers (MAX5062B/D
and MAX5063B/D)

♦ Available in 8-Pin SO, Thermally Enhanced SO,

and 12-Pin Thin QFN Packages

MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,

Half-Bridge MOSFET Drivers

________________________________________________________________ Maxim Integrated Products 1

Ordering Information

PART HIGH-SIDE DRIVER LOW-SIDE DRIVER LOGIC LEVELS PIN COMPATIBLE

MAX5062AASA Noninverting Noninverting CMOS (V

DD

/ 2) HIP 2100IB

MAX5062BASA Noninverting Inverting CMOS (V

DD

/ 2) —

MAX5062CASA Noninverting Noninverting CMOS (V

DD

/ 2) —

MAX5062DASA Noninverting Inverting CMOS (V

DD

/ 2) —

Selector Guide

19-3502; Rev 5; 5/07

For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.

Selector Guide continued at end of data sheet.

*EP = Exposed paddle.
Devices are available in both leaded and lead-free packaging.
Specify lead-free by replacing “-T” with “+T” when ordering.

Ordering Information continued at end of data sheet.

PART TEMP RANGE

MAX5062AASA -40°C to +125°C 8 SO — S8-5

MAX5062BASA -40°C to +125°C 8 SO — S8-5

MAX5062CASA -40°C to +125°C 8 SO-EP* — S8E-14

MAX5062DASA -40°C to +125°C 8 SO-EP* — S8E-14

PIN­PACKAGE

TOP

MARK

PKG

CODE

MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,
Half-Bridge MOSFET Drivers

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(VDD= V

BST

= +8V to +12.6V, VHS= GND = 0V, BBM = open, TA= -40°C to +125°C, unless otherwise noted. Typical values are at

V

DD

= V

BST

= +12V and TA= +25°C.) (Note 1)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

(All voltages referenced to GND, unless otherwise noted.)
V

DD

, IN_H, IN_L, IN_L+, IN_L-, IN_H+, IN_H-........-0.3V to +15V

DL, BBM .....................................................-0.3V to (V

DD

+ 0.3V)

HS............................................................................-5V to +130V

DH to HS.....................................................-0.3V to (V

DD

+ 0.3V)

BST to HS ...............................................................-0.3V to +15V

AGND to PGND (MAX5064) ..................................-0.3V to +0.3V

dV/dt at HS ........................................................................50V/ns

Continuous Power Dissipation (T

A

= +70°C)

8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW

8-Pin SO with Exposed Pad (derate 19.2mW/°C

above +70°C)* ....................................................1538.5mW

12-Pin Thin QFN (derate 24.4mW/°C

above +70°C)* ....................................................1951.2mW

Maximum Junction Temperature .....................................+150°C

Operating Temperature Range .........................-40°C to +125°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

*Per JEDEC 51 standard multilayer board.

PARAMETER

CONDITIONS

UNITS

POWER SUPPLIES

Operating Supply Voltage V

DD

(Note 2) 8.0

V

MAX5062_/
MAX5063_

70

VDD Quiescent Supply Current I

DD

IN_H = IN_L = GND
(no switching)

MAX5064_

µA

VDD Operating Supply Current I

DDO

fSW = 500kHz, VDD = +12V 3 mA

BST Quiescent Supply Current I

BST

IN_H = IN_L = GND (no switching) 15 40 µA

BST Operating Supply Current I

BSTOfSW

= 500kHz, VDD = V

BST

= +12V 3 mA

UVLO (VDD to GND)

VDD rising 6.5 7.3 8.0 V

UVLO (BST to HS)

BST rising 6.0 6.9 7.8 V

UVLO Hysteresis 0.5 V

LOGIC INPUT

MAX5062_/MAX5064A,
CMOS (V

DD

/ 2) version

0.67 x

0.55 x

Input-Logic High V

IH_

MAX5063_/MAX5064B, TTL version 2

V

MAX5062_/MAX5064A,
CMOS (V

DD

/ 2) version

0.4 x

0.33 x

Input-Logic Low V

IL_

MAX5063_/MAX5064B, TTL version 1.4 0.8

V

MAX5062_/MAX5064A,
CMOS (V

DD

/ 2) version

1.6

Logic-Input Hysteresis V

HYS

MAX5063_/MAX5064B, TTL version

V

SYMBOL

MIN TYP MAX

12.6

120 260

UVLO

VDD

UVLO

BST

V

DD

V

DD

1.65

V

DD

0.25

140

V

DD

MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,

Half-Bridge MOSFET Drivers

_______________________________________________________________________________________ 3

ELECTRICAL CHARACTERISTICS (continued)

(VDD= V

BST

= +8V to +12.6V, VHS= GND = 0V, BBM = open, TA= -40°C to +125°C, unless otherwise noted. Typical values are at

V

DD

= V

BST

= +12V and TA= +25°C.) (Note 1)

PARAMETER

CONDITIONS

UNITS

V

IN_H+

, V

IN_L+

= 0V

V

IN_H-

, V

IN_L-

, V

IN_H

= V

DD

Logic-Input Current I_IN

-1

+1 µA

IN_H+, IN_L+ IN_H, to GND

IN_L to V

DD

for MAX5062B/D,

MAX5063B/D

IN_H-, IN_L-, IN_H, to V

DD

Input Resistance R

IN

1MΩ

Input Capacitance C

IN

2.5 pF

HIGH-SIDE GATE DRIVER

HS Maximum Voltage

V

BST Maximum Voltage

V

TA = +25°C 2.5 3.3

Driver Output Resistance
(Sourcing)

VDD = 12V, IDH = 100mA
(sourcing)

T

A

= +125°C 3.5 4.6

Ω

TA = +25°C 2.1 2.8

Driver Output Resistance
(Sinking)

VDD = 12V, IDH = 100mA
(sinking)

T

A

= +125°C 3.2 4.2

Ω

DH Reverse Current (Latchup
Protection)

(Note 3)

mA

Power-Off Pulldown Clamp
Voltage

V

Peak Output Current (Sourcing) CL = 10nF, VDH = 0V 2 A

Peak Output Current (Sinking)

CL = 10nF, VDH = 12V 2 A

LOW-SIDE GATE DRIVER

TA = +25°C 2.5 3.3

Driver Output Resistance
(Sourcing)

VDD = 12V, IDL = 100mA
(sourcing)

T

A

= +125°C 3.5 4.6

Ω

TA = +25°C 2.1 2.8

Driver Output Resistance
(Sinking)

VDD = 12V, IDL = 100mA
(sinking)

T

A

= +125°C 3.2 4.2

Ω

Reverse Current at DL (Latchup
Protection)

(Note 3)

mA

Power-Off Pulldown Clamp
Voltage

V

DD

= 0V or floating, IDL = 1mA (sinking)

V

Peak Output Current (Sourcing) I

PK_LP

CL = 10nF, VDL = 0V 2 A

Peak Output Current (Sinking) I

PK_LN

CL = 10nF, VDL = 12V 2 A

INTERNAL BOOTSTRAP DIODE

Forward Voltage Drop V

f

I

BST

= 100mA

V

Turn-On and Turn-Off Time t

R

I

BST

= 100mA 40 ns

SYMBOL

V

= VDD for MAX5062B/D, MAX5063B/D

IN_L

V

= 0V for MAX5062A/C, MAX5063A/C

IN_L

MIN TYP MAX

0.001

V

HS_MAX

V

BST_MAX

R

ON_HP

R

ON_HN

I

DH_PEAK

R

ON_LP

R

ON_LN

IN_L for MAX5062A/C, MAX5063A/C to GND

V

= 0V or floating, IDH = 1mA (sinking) 0.94 1.16

BST

125

140

400

400

0.95 1.16

0.91 1.11

MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,
Half-Bridge MOSFET Drivers

4 _______________________________________________________________________________________

Note 1: All devices are 100% tested at TA= +125°C. Limits over temperature are guaranteed by design.
Note 2: Ensure that the V

DD

-to-GND or BST-to-HS voltage does not exceed 13.2V.

Note 3: Guaranteed by design, not production tested.
Note 4: Break-before-make time is calculated by t

BBM

= 8ns x (1 + R

BBM

/ 10kΩ).

Note 5: See the Minimum Pulse Width section.

ELECTRICAL CHARACTERISTICS (continued)

(VDD= V

BST

= +8V to +12.6V, VHS= GND = 0V, BBM = open, TA= -40°C to +125°C, unless otherwise noted. Typical values are at

V

DD

= V

BST

= +12V and TA= +25°C.) (Note 1)

PARAMETER

CONDITIONS

UNITS

SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS (VDD = V

BST

= +12V)

CL = 1000pF 7

CL = 5000pF 33Rise Time t

R

CL = 10,000pF 65

ns

CL = 1000pF 7

CL = 5000pF 33

Fall Time t

F

CL = 10,000pF 65

ns

CMOS 30 55

Turn-On Propagation Delay Time

t

D_ON

Figure 1, CL = 1000pF
(Note 3)

TTL 35 63

ns

CMOS 30 55

Turn-Off Propagation Delay Time

t

D_OFF

Figure 1, CL = 1000pF
(Note 3)

TTL 35 63

ns

Delay Matching Between
Inverting Input to Output and
Noninverting Input to Output

CL = 1000pF, BBM open for MAX5064,
Figure 1 (Note 3)

28ns

Delay Matching Between Driver­Low and Driver-High

CL = 1000pF, BBM open for MAX5064,
Figure 1 (Note 3)

28ns

R

BBM

= 10kΩ 16

R

BBM

= 47kΩ (Notes 3, 4) 40 56 72

Break-Before-Make Accuracy
(MAX5064 Only)

R

BBM

= 100kΩ 95

ns

Internal Nonoverlap 1ns

VDD = V

BST

= 12V

Minimum Pulse-Width Input Logic
(High or Low) (Note 5)

VDD = V

BST

= 8V

ns

SYMBOL

t

MATCH1

MIN TYP MAX

t

MATCH2

t

PW-MIN

135

170

MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,

Half-Bridge MOSFET Drivers

_______________________________________________________________________________________ 5

Typical Operating Characteristics

(Typical values are at VDD= V

BST

= +12V and TA= +25°C, unless otherwise specified.)

UNDERVOLTAGE LOCKOUT

AND V

(V

DD

7.5

7.4

7.3

7.2

7.1

7.0

UVLO (V)

6.9

6.8

6.7

6.6

6.5

-40 125

RISING) vs. TEMPERATURE

BST

UVLO

VDD

UVLO

BST

TEMPERATURE (°C)

I

DDO

3.0

2.8

2.6

2.4

2.2

2.0

1.8

(mA)

1.6

BSTO

I

1.4

+

1.2

DDO

I

1.0

0.8

0.6

0.4

0.2
0

013

VDD QUIESCENT CURRENT

vs. V

160

MAX5064

140

120

100

(μA)

DD

I

TA = +25°C, TA = 0°C

80

60

40

20

0

0426810153 7 9 1112131415

MAX5062/3/4 toc01

1109565 80-10 5 20 35 50-25

+ I

vs. V

BSTO

(fSW = 250kHz)

VDD (V)

(NO SWITCHING)

DD

TA = -40°C

VDD (V)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

UVLO HYSTERESIS (V)

0.3

0.2

0.1

DD

TA = +125°C

VDD AND BST UNDERVOLTAGE LOCKOUT

HYSTERESIS vs. TEMPERATURE

UVLO

VDD

HYSTERESIS

UVLO

BST

HYSTERESIS

0

-40 125

TEMPERATURE (°C)

MAX5062/3/4 toc04

1210 11345678912

MAX5062/3/4 toc06

1109565 80-10 5 20 35 50-25

200

180

160

140

120

(mA)

100

DIODE

I

80

60

40

20

0

0.5 0.70.6 0.8 0.9 1.0 1.1

21

V
NO SWITCHING

18

15

12

(μA)

BST

I

9

6

3

0

0426810153 7 9 1112131415

MAX5062/3/4 toc02

2V/div

0V

500μA/div

0A

INTERNAL BST DIODE

(I-V) CHARACTERISTICS

TA = +125°C

TA = +25°C

TA = 0°C

TA = -40°C

VDD - V

BST

BST QUIESCENT CURRENT

vs. BST VOLTAGE

= VDD + 1V,

BST

TA = +125°C

TA = -40°C, TA = 0°C, TA = +25°C

V

(V)

BST

IDD vs. V

MAX5064
IN_L-, IN_H- = V
IN_L+, IN_H+ = GND

(V)

DD

40μs/div

MAX5062/3/4 toc05

MAX5062/3/4 toc07

DD

MAX5062/3/4 toc03

V

DD

I

DD

MAX5062/MAX5063/MAX5064

125V/2A, High-Speed,
Half-Bridge MOSFET Drivers

6 _______________________________________________________________________________________

Typical Operating Characteristics (continued)

(Typical values are at VDD= V

BST

= +12V and TA= +25°C, unless otherwise specified.)

10

9

8

7

(mA)

6

BSTO

5

+ I

4

DDO

I

3

2

1

0

VDD AND BST OPERATING SUPPLY

CURRENT vs. FREQUENCY

CL = 0

MAX5062/3/4 toc08

0 1000

FREQUENCY (kHz)

900700 800200 300 400 500 600100

DH OR DL OUTPUT LOW VOLTAGE

vs. TEMPERATURE

0.34

SINKING 100mA

0.32

0.30

0.28

0.26

0.24

0.22

0.20

0.18

OUTPUT LOW VOLTAGE (V)

0.16

0.14

0.12

0.10

-40 125

TEMPERATURE (°C)

MAX5062/3/4 toc09

1109565 80-10 5 20 35 50-25

PEAK DH AND DL

SOURCE/SINK CURRENT

CL = 100nF

2A/div

1μs/div

MAX5062/3/4 toc10

DH OR DL5V/div

SINK AND SOURCE
CURRENT

DH OR DL FALL TIME

= 8V

= 12V

LOAD

= 10nF)

MAX5062/3/4 toc12

1109565 80-10 5 20 35 50-25

vs. TEMPERATURE (C

120
110
100

90
80
70

(ns)

60

F

t

50
40
30
20
10

0

-40 125

VDD = V

BST

VDD = V

BST

TEMPERATURE (°C)

DH OR DL RISE TIME

BST

BST

= 8V

= 12V

= 10nF)

L

vs. TEMPERATURE (C

120

108

96

84

72

(ns)

60

R

t

48

36

24

12

0

-40 125

VDD = V

VDD = V

TEMPERATURE (°C)

DH OR DL RISE PROPAGATION DELAY

vs. TEMPERATURE

60
55
50
45
40
35
30
25
20

PROPAGATION DELAY (ns)

15
10

5
0

-40 125

DH

DL

TEMPERATURE (°C)

MAX5062/3/4 toc11

1109565 80-10 5 20 35 50-25

MAX5062/3/4 toc13

1109565 80-10 5 20 35 50-25