MAXIM MAX4635, MAX4636 Technical data

General Description
The MAX4635/MAX4636 are fast, dual 4single­pole/double-throw (SPDT) analog switches that operate with supply voltages from +1.8V to +5.5V. High switch­ing speeds, 1on-resistance flatness, and low power consumption make these devices ideal for audio/video, communications, and battery-operated devices. Containing two independently controllable SPDT switches in 10-pin µMAX and 10-pin 3mm x 3mm thin QFN packages, the MAX4635/MAX4636 use little board space, and have low power consumption ensuring min­imal impact on your power budget. The analog signal range extends to the supply rails. The MAX4635 has inverted logic compared to the MAX4636.
________________________Applications
Battery-Powered Equipment
Relay Replacement
Audio and Video Signal Routing
Low-Voltage Data-Acquisition Systems
Sample-and-Hold Circuits
Communications Circuits
Features
Guaranteed On-Resistance
4(max) +5V Supply
5.5(max) +3V Supply
Guaranteed Match Between Channels
0.2(max)
Guaranteed Flatness Over Signal Range
1(max) with +5V Supply
Fast Switching Speeds
14ns (max) Turn-On Time 6ns (max) Turn-Off Time
1.8V Operation
100(typ) On-Resistance Over Temperature 56ns (typ) Turn-On Time 17ns (typ) Turn-Off Time
+1.8V to +5.5V Single-Supply Operation Rail-to-Rail
®
Signal Handling
Low Crosstalk: -67dB at 1MHzHigh Off-Isolation: -65dB at 1MHzTHD: 0.1%
MAX4635/MAX4636
Fast, Low-Voltage, Dual 4SPDT
CMOS Analog Switches
________________________________________________________________ Maxim Integrated Products 1
Pin Configuration/Functional Diagram/Truth Table
19-1709; Rev 2; 5/03
Ordering Information
Rail-to-Rail is a registered trademark of Nippon Motorola, Ltd.
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
PART TEMP RANGE
MAX4635EUB -40°C to +85°C 10 µMAX
MAX4635ETB -40°C to +85°C 10 Thin
MAX4636EUB -40°C to +85°C 10 µMAX
MAX4636ETB -40°C to +85°C 10 Thin
PIN-
PACKAGE
QFN (3
3)
3)
QFN (3
TOP
MARK
AAT
AAO
TOP VIEW
1
IN1
NO1
GND
1
2
3
MAX4635
4
5
µMAX
10
IN1
COM1
2
NC1
9
NC1
3
GND
8
V+
7
NC2NO2
COM2IN2
6
MAX4636
4
5
µMAX
SWITCHES SHOWN FOR "0" INPUT
10
COM1
9
NO1
8
V+
7
NO2NC2
COM2IN2
6
NO_ TO COM_ NC_ TO COM_
IN_
0 1
OFF
ON
1
IN1
2
NO1
3
GND
4
5
3 x 3 THIN QFN
MAX4635
ON
OFF
1
10
IN1
COM1
2
NC1
9
NC1
3
GND
8
V+
7
NC2NO2
COM2IN2
6
MAX4636
4
5
3 x 3 THIN QFN
10
9
8
7
6
COM1
NO1
V+
NO2NC2
COM2IN2
MAX4635/MAX4636
Fast, Low-Voltage, Dual 4SPDT CMOS Analog Switches
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICSSingle +5V Supply
(V+ = +4.5V to +5.5V, VIH= +2.4V, V
IL
= +0.8V, TA= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at TA= +25°C.)
(Notes 2, 9)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
(Voltages Referenced to GND)
V+, IN_ .....................................................................-0.3V to +6V
COM_, NC_, NO_ (Note 1) .......................... -0.3V to (V+ + 0.3V)
Continuous Current into Any Terminal .............................±30mA
Peak Current into COM_, NC_, NO_
(pulsed at 1ms, 10% duty cycle).................................±100mA
Continuous Power Dissipation (T
A
= +70°C)
10-Pin µMAX (derate 4.7mW/°C above +70°C) ............330mW
10-Pin Thin QFN (derate 24.4mW/°C above +70°C) ..1951mW
Operating Temperature Range .......................... -40°C to +85°C
Storage Temperature Range ........................... -65°C to +150°C
Lead Temperature (soldering, 10s) ............................... +300°C
Note 1: Signals on NO_, NC_, or COM_ exceeding V+ or GND are clamped by internal diodes. Limit forward-diode current to maxi-
mum current rating.
)
)
)
)
)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
ANALOG SWITCH
Analog Signal Range
On-Resistance R
On-Resistance Match Between Channels (Notes 3, 4)
On-Resistance Flatness (Note 5)
NO_, NC_ Off-Leakage Current (Note 6)
COM_ Off-Leakage Current (Note 6)
COM_ On-Leakage Current (Note 6)
DIGITAL I/O (IN1, IN2)
Input Logic High V
Input Logic Low V
Input Leakage Current IIH, I
V
,
COM_
,
V
NO_
V
NC_
ON
R
ON
R
FLAT(ON
I
NC_(OFF
I
NO_(OFF
I
COM_(OFF
I
COM_(ON
IH
IL
IL
V + = 4.5V , I V
NO_
V + = 4.5V , I V
NO_
V+ = 4.5V, I V
NO_
V+ = 5.5V; V
,
4.5V ; V
or V
or V
or V
N O_
C OM_
NC_
C OM_
NC_
COM_
NC_
COM_
or V
= 0 to V+
= 0 to V+
= 0 to V+
N C _
1V
V+ = 5.5V; V
4.5V; V
N O_
COM_
or V
1V
V + = 5.5V ; V 1V ; V
N O_
or V
C OM_
N C _
1V or floating
V
= 0 or +5.5V -100 5 100 nA
IN_
= 10m A,
= 10m A,
= 10mA,
= 1V,
TA = +25°C 2.5 4
T
= T
MIN
to T
MAX
A
TA = +25°C 0.1 0.2
T
= T
MIN
to T
MAX
A
TA = +25°C 0.5 1
T
= T
MIN
to T
MAX
A
TA = +25°C-0.1±0.01 0.1
= 4.5V ,
= T
N C _
= 4.5V,
= 1V,
= 4.5V ,
T
A
TA = +25°C-0.1±0.01 0.1
T
A
TA = +25°C-0.1±0.01 0.1
= T
MIN
MIN
to T
to T
MAX
MAX
= 4.5V ,
= T
MIN
to T
MAX
T
A
0V+V
4.5
0.4
1.2
-0.3 0.3
-0.3 0.3
-0.3 0.3
2.4 V
0.8 V
nA
nA
nA
MAX4635/MAX4636
Fast, Low-Voltage, Dual 4SPDT
CMOS Analog Switches
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICSSingle +5V Supply (continued)
(V+ = +4.5V to +5.5V, VIH= +2.4V, V
IL
= +0.8V, TA= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at TA= +25°C.)
(Notes 2, 9)
ELECTRICAL CHARACTERISTICSSingle +3V Supply
(V+ = +2.7V to +3.6V, VIH= +2.0V, VIL= +0.8V, TA = T
MIN
to T
MAX
, unless otherwise noted. Typical values are at TA= +25°C.)
(Notes 2, 9)
)
)
)
)
),
)
)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
DYNAMIC
Turn-On Time (Note 6)
Turn-Off Time (Note 6)
Break-Before-Make Time (Note 6)
Charge Injection Q V
NO_, NC_ Off-Capacitance
COM_ On-Capacitance C
Off-Isolation (Note 7) V
Crosstalk (Note 8) V
Total Harmonic Distortion THD RL = 600Ω, V
SUPPLY
Positive Supply Current I+ V+ = 5.5V, V
t
ON
t
OFF
t
BBM
C
NO_(OFF
C
NC_(OFF
COM_(ON
ISO
CT
V
, V
NO_
NC_
= 300Ω, CL = 35pF,
R
L
Figure 1a
V
, V
NO_
NC_
= 300Ω, CL = 35pF,
R
L
Figure 1a
V
, V
NO_
NC_
R
= 300Ω, CL = 35pF,
L
Figure 1b
= 2V, R
GEN
,
V
, V
NO_
V
COM_
= GND, f = 1MHz, Figure 3 9 pF
NC_
= GND, f = 1MHz, Figure 3 32 pF
CL = 5pF, R
C L = 5p F, R
L
CL = 5pF, R
CL = 5pF, R
= 3V;
= 3V;
= 3V;
= 0, CL = 1.0nF, Figure 2 2 pC
GEN
= 50, f = 10MHz, Figure 4 -52
L
= 50Ω, f = 1M H z, Fi g ur e 4 -65
= 50Ω, f = 10M H z, Fig ur e 4 -66
L
= 50, f = 1MHz, Figure 4 -67
L
= 5V
NO_
= 0 or V+ 0.001 1.0 µA
IN_
TA = +25°C1214
T
= T
MIN
to T
MAX
A
TA = +25°C56
T
= T
MIN
to T
MAX
A
TA = +25°C7
= T
MIN
to T
MAX
T
A
, f = 20Hz to 20kHz 0.1 %
P-P
ns
16
ns
8
ns
1
dB
dB
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
ANALOG SWITCH
,
V
COM_
,
Analog Signal Range
On-Resistance R
On-Resistance Match Between Channels (Notes 3, 4)
On-Resistance Flatness (Note 5)
NO_, NC_ Off-Leakage Current (Note 6)
(Note 6)
V
NO_
V
NC_
ON
R
ON
R
FLAT(ON
I
NO_(OFF
I
NC_(OFF
ICOM_(OFF
V + = 2.7V , I
or V
V
NO_
V + = 2.7V , I V
or V
NO_
V + = 2.7V , I V
or V
NO_
V + = 3.3V ; V V
or V
NO_
V + = 3.3V ; V V
or V
NO_
C OM_
= 0 to V+
NC_
C OM_
= 0 to V+
NC_
C OM_
= 0 to V+
NC_
C OM_
= 3V, 1V
NC_
C OM_
= 3V, 1V
NC_
= 10m A,
= 10m A,
= 10m A,
= 1V , 3V ;
= 1V , 3V ;
TA = +25°C 5 5.5
T
= T
A
TA = +25°C 0.1 0.2
T
= T
A
TA = +25°C 1.5 2
T
= T
A
TA = +25°C-0.1±0.01 0.1
T
= T
A
TA = +25°C-0.1±0.01 0.1COM_ Off-Leakage Current
T
= T
A
MIN
MIN
MIN
MIN
MIN
to T
to T
to T
to T
to T
0V+V
MAX
MAX
MAX
-0.3 0.3
MAX
-0.3 0.3
MAX
8
0.4
2.5
nA
nA
MAX4635/MAX4636
Fast, Low-Voltage, Dual 4SPDT CMOS Analog Switches
4 _______________________________________________________________________________________
)
)
)
ELECTRICAL CHARACTERISTICSSingle +3V Supply (continued)
(V+ = +2.7V to +3.6V, VIH= +2.0V, VIL= +0.8V, TA
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at TA= +25°C.)
(Notes 2, 9)
Note 2: The algebraic convention, where the most negative value is a minimum and the most positive value a maximum, is used in
this data sheet.
Note 3: ∆R
ON
= R
ON(MAX)
- R
ON(MIN)
.
Note 4: ∆R
ON
matching specifications for QFN-packaged parts are guaranteed by design.
Note 5: Flatness is defined as the difference between the maximum and minimum values of on-resistance as measured over the
specified analog signal ranges.
Note 6: Guaranteed by design. Note 7: Off-Isolation = 20log
10(VCOM
/ VNO), V
COM
= output, VNO= input to off switch.
Note 8: Between any two switches. Note 9: QFN packaged parts are tested at +25°C and guaranteed by design and correlation over the entire temperature range.
COM_ On-Leakage Current (Note 6)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
I
COM_(ON
DIGITAL I/O (IN1, IN2)
Input Logic High V
Input Logic Low V
Input Leakage Current IIH, I
IH
IL
IL
DYNAMIC
Turn-On Time (Note 6) t
Turn-Off Time (Note 6) t
ON
OFF
Break-Before-Make Time (Note 6)
Charge Injection Q V
C
NO_, NC_ Off-Capacitance
COM On-Capacitance C
NO_(OFF
C
NC_(OFF
COM
Off-Isolation (Note 7) V
Crosstalk (Note 8) V
,
(ON) V
ISO
CT
SUPPLY
Positive Supply Current I+ V+ = 3.6V, VIN = 0 or +3.6V 0.001 1 µA
V+ = 3.3V; V
NO_
or V
3V; V 3V, or floating
COM_
NC_
=1V,
= 1V,
TA = +25°C-0.1±0.01 0.1
T
= T
MIN
to T
MAX
-0.3 0.3
A
2.0 V
VIN_ = 0 or +5.5V -100 5 100 nA
V
, V
NC_
= 2V;
= 300Ω,
L
NO_
C
= 35pF, R
L
Figure 1a
V
, V
NC_
= 2V;
= 300Ω,
L
NO_
C
= 35pF, R
L
Figure 1a
, V
NC_
= 2V;
= 300Ω,
L
V
NO_
= 35pF, R
C
L
Figure 1b
= 1.5V, R
GEN
V
, V
NO_
= GND, f = 1MHz, Figure 3 32 pF
COM
CL = 5pF, R
CL = 5pF, R
CL = 5pF, R
CL = 5pF, R
GEN
= GND, f = 1MHz, Figure 3 9 pF
NC_
= 50, f = 10MHz, Figure 4
L
= 50, f = 1MHz, Figure 4 -65
L
= 50, f = 10MHz, Figure 4 -66
L
= 50, f = 1MHz, Figure 4 -67
L
TA = +25°C1418
= T
MIN
to T
MAX
T
A
TA = +25°C68
= T
MIN
to T
MAX
T
A
TA = +25°C7
T
= T
MIN
to T
MAX
A
1
= 0, CL = 1.0nF, Figure 2 11 pC
-52
nA
0.4 V
ns
20
ns
10
ns
dB
dB
Loading...
+ 7 hidden pages