MAXIM MAX44269 Technical data

EVALUATION KIT AVAILABLE
19-5986; Rev 1; 12/11
MAX44269
1.3mm x 1.3mm, Low-Power Dual Comparator

General Description

The MAX44269 is an ultra-small and low-power dual comparator ideal for battery-powered applications such as cell phones, notebooks, and portable medical devices that have extremely aggressive board space and power constraints. The comparator is available in a miniature
1.3mm x 1.3mm, 9-bump WLP package, making it the industry’s smallest dual comparator.
The IC can be powered from supply rails as low as 1.8V and up to 5.5V. It requires just 0.5µA of typical supply current per comparator. It has a rail-to-rail input struc­ture and a unique output stage that limits supply current surges while switching. This design also minimizes over­all power consumption under dynamic conditions. The IC has open-drain outputs, making it suitable for mixed voltage systems. The IC also features internal filtering to provide high RF immunity. It operates over a -40°C to +85°C temperature.

Applications

Smartphones Notebooks Two-Cell Battery-Powered Devices Battery-Operated Sensors Ultra-Low-Power Systems Portable Medical Mobile Accessories

Features

S Ultra-Low Power Consumption
0.5µA per Comparator
S Ultra-Small 1.3mm x 1.3mm WLP Package
S Guaranteed Operation Down to VCC = 1.8V
S Input Common-Mode Voltage Range Extends
200mV Beyond-the-Rails
S 6V Tolerant Inputs Independent of Supply
S Open-Drain Outputs
S Internal Filters Enhance RF Immunity
S Crowbar-Current-Free Switching
S Internal Hysteresis for Clean Switching
S No Output Phase Reversal for Overdriven Inputs
Ordering Information appears at end of data sheet.
For related parts and recommended products to use with this part, refer to www.maxim-ic.com/MAX44269.related.

Typical Application Circuit

V
CC
V
CC
V
CC
V
REF
V
CC
REMOTE KEY
CONNECTOR
ACCESSORY ID
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MAX44269
OUT1
OUT2
GND
V
V
PULL
PULL
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
MAX44269
1.3mm x 1.3mm, Low-Power Dual Comparator

ABSOLUTE MAXIMUM RATINGS

VCC to GND ............................................................. -0.3V to +6V
INA+, INA-, INB+, INB- to GND .............................. -0.3V to +6V
Continuous Input Current into Any Pin ............................ Q20mA
Maximum Power Dissipation
(derate 11.9mW/NC at TA = +70NC) ............................952mW
Output Voltage to GND (OUT_) ..............................-0.3V to +6V
Output Current (OUT_) .................................................... Q50mA
PACKAGE THERMAL CHARACTERISTICS (Note 1)
WLP
Junction-to-Ambient Thermal Resistance (qJA) ..........84°C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera­tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Output Short-Circuit Duration (OUT_) .......................Continuous
Operating Temperature Range .......................... -40NC to +85NC
Storage Temperature Range ............................ -65NC to +150NC
Junction Temperature .....................................................+150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC

ELECTRICAL CHARACTERISTICS

(VCC = 5V, V otherwise noted.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
DC CHARACTERISTICS
Input-Referred Hysteresis V
Input Offset Voltage V
Input Bias Current I
Output-Voltage Swing Low V
Input Voltage Range V
Output Short-Circuit Current
Output Leakage Current I
GND
= 0V, V
IN-
= V
IN+
HYS
I
SC
LEAK
= 1.2V, R
OS
B
OL
CM
= 100kI to VCC, TA = -40NC to +85NC. Typical values are at TA = +25NC, unless
PULLUP
(V
- 0.2V) P VCM P (VCC + 0.2V) (Note 3) 4 6 mV
GND
V
- 0.2V P VCM P
GND
VCC + 0.2V (Note 4)
TA = +25NC 0.15 TA = -40NC to +85NC 0.2
VCC = 1.8V, I
= 1mA
SINK
VCC = 5V, I
Inferred from VOS test
Sinking, V
VCC = 5.5V, V
SINK
OUT
= 6mA
= V
CC
= 5.5V 0.2 nA
OUT
TA = +25NC 0.15 5
-40NC P TA P +85NC 10
TA = +25NC 105 200
-40NC P TA P +85NC 300 TA = +25NC 285 350
-40NC P TA P +85NC 450
V
GND
- 0.2V
VCC = 1.8V 3 VCC = 5V 30
V
CC
+ 0.2V
mV
nA
mV
V
mA
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MAX44269
1.3mm x 1.3mm, Low-Power Dual Comparator
ELECTRICAL CHARACTERISTICS (continued)
(VCC = 5V, V otherwise noted.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
AC CHARACTERISTICS
Propagation Delay High to Low (Note 5)
Propagation Delay Low to High (Note 5)
Fall Time t
POWER SUPPLY
Supply Voltage Range V
Power-Supply Rejection Ratio
Supply Current per Comparator
Power-Up Time t
Note 2: All devices are 100% production tested at TA = +25NC. Temperature limits are guaranteed by design. Note 3: Hysteresis is the input voltage difference between the two switching points. Note 4: VOS is the average of the positive and negative trip points minus V Note 5: Overdrive is defined as the voltage above or below the switching points.
GND
= 0V, V
IN-
= V
= 1.2V, R
IN+
Input overdrive = Q100mV, VCC = 5V 5
t
PHL
t
PLH
F
CC
PSRR VCC = 1.8V to 5.5V 60 80 dB
I
CC
ON
Input overdrive = Q100mV, VCC = 1.8V 7 Input overdrive = Q20mV, VCC = 5V 8 Input overdrive = Q20mV, VCC = 1.8V 12 Input overdrive = Q100mV, VCC = 5V 34 Input overdrive = Q100mV, VCC = 1.8V 12 Input overdrive = Q20mV, VCC = 5V 35 Input overdrive = Q20mV, VCC = 1.8V 12 C
Guaranteed from PSRR tests 1.8 5.5 V
VCC = 1.8V, TA = +25NC 0.4 0.75
VCC = 5V, -40NC P TA P +85NC 1
= 100kI to VCC, TA = -40NC to +85NC. Typical values are at TA = +25NC, unless
PULLUP
= 15pF 0.2 Fs
LOAD
1 ms
.
REF
Fs
Fs
FAVCC = 5V, TA = +25NC 0.5 0.85
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MAX44269
06
1.3mm x 1.3mm, Low-Power Dual Comparator

Typical Operating Characteristics

(VCC = 5V, V
GND
= 0V, V
IN-
= V
= 1.2V, R
IN+
= 100k to VCC, TA = -40NC to +85NC. Typical values are at TA = +25NC, unless
PULLUP
otherwise noted. All devices are 100% production tested at TA = +25NC. Temperature limits are guaranteed by design.)
SUPPLY CURRENT vs. TRANSITION
SUPPLY CURRENT vs. SUPPLY VOLTAGE
1.2
1.0
0.8
0.6
0.4
SUPPLY CURRENT (µA)
0.2
0
1.5 6.0
V
= HIGH
OUT
TA = +85°C
TA = +25°C
SUPPLY VOLTAGE (V)
TA = -40°C
MAX44269 toc01
5.55.04.54.03.53.02.52.0
INPUT OFFSET VOLTAGE
vs. TEMPERATURE
0
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
VDD = 2.7V
-0.35
INPUT OFFSET VOLTAGE (mV)
-0.40
-0.45
-0.50
-40 100
VDD = 5V
VDD = 1.8V
TEMPERATURE (°C)
MAX44269 toc04
806020 400-20
OUTPUT-VOLTAGE LOW
vs. PULLUP RESISTANCE
10,000
)
EE
- V
1000
OL
100
10
OUTPUT VOLTAGE LOW (V
1
100 100k 54321
PULLUP RESISTANCE (I)
10k1k
MAX44269 toc07
SUPPLY CURRENT vs. SUPPLY VOLTAGE
1.4
V
= LOW
OUT
TA = +85°C
TA = +25°C
SUPPLY VOLTAGE (V)
TA = -40°C
1.2
1.0
0.8
0.6
SUPPLY CURRENT (µA)
0.4
0.2
0
INPUT BIAS CURRENT
vs. TEMPERATURE
0.20
0.18
0.16
0.14
0.12
0.10
VDD = 2.7V
0.08
0.06
INPUT BIAS CURRENT (nA)
0.04
0.02
0
-40 100
VDD = 5V
VDD = 1.8V
TEMPERATURE (°C)
SHORT-CIRCUIT CURRENT
vs. SUPPLY VOLTAGE
40
V
35
30
25
20
15
10
SHORT-CIRCUIT CURRENT (mA)
= LOW
OUT
5
0
TA = -40°C
TA = +25°C
TA = +85°C
SUPPLY VOLTAGE (V)
5.55.04.54.03.53.02.52.01.5 6.0
806020 400-20
14
12
MAX44269 toc02
10
8
6
SUPPLY CURRENT (µA)
4
2
0
1 10k
500
450
MAX44269 toc05
400
350
300
250
200
150
INPUT BIAS CURRENT (nA)
100
50
0
-1 6
45
40
MAX44269 toc08
35
30
25
20
OCCURRENCE (%)
15
10
5
0
FREQUENCY (V
OVERDRIVE
VCC = 1.8V
INPUT FREQUENCY (Hz)
INPUT BIAS CURRENT
vs. COMMON-MODE VOLTAGE
VDD = 2.7V
VDD = 5V
VDD = 0V
INPUT COMMON-MODE VOLTAGE (V)
INPUT OFFSET VOLTAGE HISTOGRAM
-2 INPUT OFFSET VOLTAGE (mV)
= 20mV)
VCC = 5V
VCC = 2.7V
1k10010
VDD = 1.8V
MAX44269 toc03
MAX44269 toc06
542 310
MAX44269 toc09
2.52.01.0 1.5-1.0 -0.5 0 0.5-1.5
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MAX44269
1.3mm x 1.3mm, Low-Power Dual Comparator
Typical Operating Characteristics (continued)
(VCC = 5V, V
GND
= 0V, V
IN-
= V
= 1.2V, R
IN+
= 100k to VCC, TA = -40NC to +85NC. Typical values are at TA = +25NC, unless
PULLUP
otherwise noted. All devices are 100% production tested at TA = +25NC. Temperature limits are guaranteed by design.)
LEAKAGE CURRENT vs. TEMPERATURE
0.50
0.45
0.40
0.35
0.30
0.25
VCC = 5V
0.20
0.15
0.10
OUTPUT LEAKAGE CURRENT (nA)
0.05
0
-50 110
VCC = 2.7V
TEMPERATURE (°C)
PROPAGATION DELAY vs. TEMPERATURE
(V
OVERDRIVE
45
40
35
30
25
20
15
PROPAGATION DELAY (µs)
10
5
0
-40 100
= 100mV, VDD = 5V)
t
PLH
t
PHL
TEMPERATURE (°C)
INPUT REFERRED HYSTERESIS
vs. TEMPERATURE
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
INPUT REFERRED HYSTERESIS (mV)
0.5
0
-40 100 TEMPERATURE (°C)
VCC = 1.8V
907030 50-10 10-30
806020 400-20
806020 400-20
120
100
MAX44269 toc10
80
60
40
PROPAGATION DELAY (µs)
20
0
60
50
MAX44269 toc13
40
30
20
PROPAGATION DELAY (µs)
10
0
0 1000
MAX44269 toc16
V
IN+
20mV/div
V
OUT
1V/div
PROPAGATION DELAY
vs. PULLUP RESISTANCE
t
PLH
t
PHL
100k
PULLUP RESISTANCE (I)
1M10k1k
PROPAGATION DELAY
vs. INPUT OVERDRIVE (t
TA = -40°C
INPUT OVERDRIVE VOLTAGE (mV)
PLH
TA = +25°C
TA = +85°C
800600400200
)
SMALL-SIGNAL TRANSIENT RESPONSE
= 1.8V)
(V
CC
20µs/div
MAX44269 toc17
MAX44269 toc11
PROPAGATION DELAY (µs)
10M
MAX44269 toc14
PROPAGATION DELAY (µs)
20mV/div
100
90
80
70
60
50
40
30
20
10
12
10
V
V
OUT
2V/div
0
8
6
4
2
0
IN+
PROPAGATION DELAY vs. CAPACITIVE LOAD
t
PLH
CAPACITIVE LOAD (pF)
PROPAGATION DELAY
vs. INPUT OVERDRIVE (t
TA = -40°C
TA = +85°C
0 1000
INPUT OVERDRIVE VOLTAGE (mV)
SMALL-SIGNAL TRANSIENT RESPONSE
= 5V)
(V
CC
20µs/div
t
PHL
8006004002000 1000
PHL
TA = +25°C
800600400200
MAX44269 toc12
)
MAX44269 toc15
MAX44269 toc18
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MAX44269
1.3mm x 1.3mm, Low-Power Dual Comparator
Typical Operating Characteristics (continued)
(VCC = 5V, V
GND
= 0V, V
IN-
= V
= 1.2V, R
IN+
= 100k to VCC, TA = -40NC to +85NC. Typical values are at TA = +25NC, unless
PULLUP
otherwise noted. All devices are 100% production tested at TA = +25NC. Temperature limits are guaranteed by design.)
LARGE-SIGNAL TRANSIENT RESPONSE
= 5V)
(V
CC
V
IN+
V
OUT
2V/div
20µs/div
NO OUTPUT PHASE REVERSAL
V
IN
MAX44269 toc20
MAX44269 toc22
V
100mV/div
V
1V/div
V
200mV/div
V
2V/div
LARGE-SIGNAL TRANSIENT RESPONSE
= 1.8V)
(V
CC
IN+
OUT
20µs/div
POWER-UP RESPONSE
IN
CC
MAX44269 toc19
200mV/div
MAX44269 toc21
-0.3V TO +6V
V
V
OUT
2V/div
800µs/div
OUT
20µs/div
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TOP VIEW
MAX44269
1.3mm x 1.3mm, Low-Power Dual Comparator

Bump Configuration

MAX44269
1
+
INA- INA+ OUTA
A
B
GND N.C. V
C
INB- INB+ OUTB
23
CC
WLP
PIN NAME FUNCTION
A1 INA- Comparator A Inverting Input A2 INA+ Comparator A Noninverting Input A3 OUTA Comparator A Output B1 GND B2 N.C. Not Connected
B3 V C1 INB- Comparator B Inverting Input C2 INB+ Comparator B Noninverting Input C3 OUTB Comparator B Output
CC
Negative Supply Voltage. Bypass to GND with a 1.0FF capacitor.
Positive Supply Voltage. Bypass to GND with a 1.0FF capacitor.

Bump Description

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MAX44269
1.3mm x 1.3mm, Low-Power Dual Comparator

Detailed Description

The MAX44269 is a general-purpose dual comparator for battery-powered devices where area, power, and cost constraints are crucial. The IC can operate with a low
1.8V supply rail typically consuming 0.5µA quiescent cur­rent per comparator. This makes it ideal for mobile and very low-power applications. The IC’s common-mode input voltage range extends 200mV beyond-the-rails. An internal 4mV hysteresis ensures clean output switching, even with slow-moving input signals.

Input Stage Structure

The input common-mode voltage range extends from (V
- 0.2V) to (VCC + 0.2V). The comparator operates
GND
at any different input voltage within these limits with low input bias current. Input bias current is typically 0.15nA if the input voltage is between the supply rails.
The IC features a unique input ESD structure that can handle voltages from -0.3V to 6V independent of supply voltage. This allows for the device to be powered down with a signal still present on the input without damag­ing the part. This feature is useful in applications where one of the inputs has transient spikes that exceed the supply rails.
No Output Phase Reversal
for Overdriven Inputs
The IC’s design is optimized to prevent output phase reversal if both the inputs are within the input common mode voltage range. If one of the inputs is outside the input common-mode voltage range, then output phase reversal does not occur as long as the other input is kept within the valid input common-mode voltage range. This behavior is shown in the No Output Phase Reversal graph in the Typical Operating Characteristics section.

Open-Drain Output

The IC features an open-drain output, enabling greater control of speed and power consumption in the circuit design. The output logic level is also independent from the input, allowing for simple level translation.

RF Immunity

The IC has very high RF immunity due to on-chip filtering of RF sensitive nodes. This allows the IC to hold its output state even in the presence of high amounts of RF noise. This improved RF immunity makes the IC ideal for mobile wireless devices.

Applications Information

Hysteresis

Many comparators oscillate in the linear region of opera­tion because of noise or undesired parasitic feedback. This tends to occur when the voltage on one input is equal or very close to the voltage on the other input.
The hysteresis in a comparator creates two trip points: one for the rising input voltage and one for the falling input voltage (Figure 1). The difference between the trip points is the hysteresis. When the comparator’s input voltages are equal and the output trips, the hysteresis effectively causes one comparator input to move quickly past the other. This takes the input out of the region where oscil­lation occurs. This provides clean output transitions for noisy, slow-moving input signals. The IC has an internal hysteresis of 4mV. Additional hysteresis can be generat­ed with three resistors using positive feedback (Figure 2).
IN+
IN-
V
HYST
OUT
Figure 1. Threshold Hysteresis Band (Not to Scale)
R2
V
IN
R4
THERSHOLDS
HYSTERESIS BAND
R3
V
REF
V
CC
MAX44269
GND
OUT
V
TH
V
TL
R1
Figure 2. Adding Hysteresis with External Resistors
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MAX44269
 
 
 

 

1.3mm x 1.3mm, Low-Power Dual Comparator
Use the following procedure to calculate resistor values.
1) Select R3. Input bias current at IN_+ is less than15nA. To minimize errors caused by the input bias current, the current through R3 should be at least 1.5µA. Current through R3 at the trip point is (V
REF
- V
OUT
)/ R3. Considering the two possible output states in solv­ing for R3 yields two formulas:
R3 = V
/IR3 and R3 = [(VCC - V
REF
)/IR3] - R1
REF
Use the smaller of the two resulting resistor values.
For example, for VCC = 5V, IR3 = -1.5µA, R1 = 200kI, and a V
= 1.24V, the two resistor values are 827kI
REF
and 1.5MI. Therefore, for R3 choose the standard value of 825kI.
2) Choose the hysteresis band required (VHB). In this example, the VHB = 50mV.
3) Calculate R2 according to the following equation:
V
= +
R2 (R1 R3)
V
CC
HB
(V
REF
x R 1) / R 3
+
For this example, insert the value:
50mV
R2 (200k 0.825M ) 9.67k
= Ω+ Ω =
 
5.3

For this example, choose standard value R2 = 9.76kI.
4) Choose the trip point for VIN rising (V
) in such a
THR
way that:

V
V V1
>+
THR REF
V
is the threshold voltage at which the com-
THR
parator switches its output from low to high, as V
HB

V
CC

IN
rises above the trip point. For this example, choose V
= 3V.
THR
5) Calculate R4 as follows:
=
R4

V
THR

V
REF

= =
R4 6.93k

3 11

1.24 x 9.76 9.76 825

1
11

−−
x R2 R2 R3
 
1
 
−−
    
For this example, choose a standard value of 6.98kI.
6) Verify the trip voltages and hysteresis as follows:
THR REF
= ++
VV
THF REF
x R2
   
R2 R3 R4
   
111
       
R2 R1 R3 R4
   
R2
R1 R3
+
+
x
V
CC
111
   
xR2
= ++
VV
The hysteresis network in Figure 2 can be simplified if the reference voltage is chosen to be at midrail and the trip points of the comparator are chosen to be symmetrical about the reference voltage. Use the circuit in Figure 3 if the reference voltage can be designed to be at the center of the hysteresis band. For the symmetrical case, follow the same steps outlined in the paragraph above to calculate the resistor values except that in this case, resistor R4 approaches infinity (open). So in the previous example with V
= 2.5V, if V
REF
= 2.525V and V
THR
THF
= 2.475V then using the above formulas, we get R1 = 200kI, R2 = 9.09kI and R3 = 825kI, R4 = not installed.

Jack Detect

The IC can be used to detect peripheral devices connected to a circuit. This includes a simple jack­detect scheme for cell phone applications. The Typical
Application Circuit shows how the device can be used in
conjunction with an external reference to detect a remote key connection and an accessory ID input. The open­drain output of the devices allows the output logic level to be controlled independent of the peripheral device’s load, making interfacing and controlling external devices as simple as monitoring a few digital inputs on a micro­controller or codec.
V
CC
R3
R2
V
IN
V
REF
MAX44269
OUT
GND
R1
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Figure 3. Simplified External Hysteresis Network if V the Center of the Hysteresis Band
REF
is at
MAX44269
 

    
 
1.3mm x 1.3mm, Low-Power Dual Comparator

Logic-Level Translator

Due to the open-drain output of the IC, the device can translate between two different logic levels (Figure 4). If the internal 4 mV hysteresis is not sufficient, then exter­nal resistors can be added to increase the hysteresis as shown in Figure 2 and Figure 3.

Power-On Reset Circuit

The IC can be used to make a power-on reset circuit as displayed in Figure 5. The positive input provides the ratiometric reference with respect to the power supply and is created by a simple resistive divider. Choose reasonably large values to minimize the power consump­tion in the resistive divider. The negative input provides the power-on delay time set by the time constant of the RC circuit formed by R2 and C1. This simple circuit can be used to power up the system in a known state after ensuring that the power supply is stable. Diode D1 pro­vides a rapid reset in the event of unexpected power loss.
V
CC
V
MAX44269
V
IN
V
REF
PULL
R1
OUT

Relaxation Oscillator

The IC can also be used to make a simple relaxation oscillator (Figure 6). By adding the RC circuit R5 and C1, a standard Schmidt Trigger circuit referenced to a set voltage is converted into an astable multivibra­tor. As shown in Figure 7, IN- is a sawtooth waveform with capacitor C1 alternately charging and discharging through resistor R5. The external hysteresis network formed by R1 to R4 defines the trip voltages as:
R3 x R4
R2R3 R2R4 R3R4
++
R4R5(R1 R2 R3)
R1R 3 R 4
+
++
++ +
R2(R1R3 R3R5 R1R5)
V
T_FALL
V
T_RISE
V
=
CC
V
=
CC
R4R5 (R1 R2 R3) R1R3R4
+ ++
Using the basic time domain equations for the charging and discharging of an RC circuit, the logic-high time, logic-low time, and frequency can be calculated as:

V
t
LOW
R5C1 ln
=
T_FALL
 
V
T_RISE

GND

Figure 4. Logic-Level Translator

V
CC
D1 R2
R3
R4
C1

Figure 5. Power-On Reset Circuit

���������������������������������������������������������������� Maxim Integrated Products 10
V
CC
MAX44269
GND
RESET
V
CC
R3
V
CC
R2
R4
R1
C1

Figure 6. Relaxation Oscillator

MAX44269
OUT
GND
R5
R1
MAX44269
 
 
 
 
11
+
  
1.3mm x 1.3mm, Low-Power Dual Comparator
Since the comparator’s output is open drain, it goes to high impedance corresponding to logic-high. So, when the output is at logic-high, the C1 capacitor charges through the resistor network formed by R1 to R5 as shown in Figure 8. An accurate calculation of t
would have
HIGH
involved applying thevenin’s theorem to compute the equivalent thevenin voltage (V resistance (R C1. t
can then be computed using the basic time
HIGH
THEVENIN
) in series with the capacitor
THEVENIN
) and thevenin
domain equations for the charging RC circuit as:
V
T_RISE
V
T_FALL
V x R4
CC
The t
V
HIGH
V
HIGH
THEVENIN
R (R2 R4) R3 R1 R5
THEVENIN
THEVENIN
= ++
[ ]
V (R2 R4) R3
CC
= +
(R2 R4) R3 R1 R2 R4
x
(R2 R4) R3 R1
calculation can be simplified by selecting the
R C1 ln
=
t
THEVENIN
V
THEVENIN

+
[ ]
++ +
R1
++
component values in such a way that R3 >> R1 and R5 >> R1. This ensures that the output of the comparator goes close to VCC when at logic-high (that is, V ~ VCC and R
THEVENIN
~ R5). With this selection, t
THEVENIN
HIGH
can be approximated as:
V
V
T_RISE
t
HIGH
R5C1 ln
=
CC
V
V
T_FALL
CC
The frequency of the relaxation oscillator is:
f
= =
tt
HIGH LOW
R 5 C1 1n
V
T_FALL
V
T_RISE
VV
( )
CC T_RISE
V
( )
CC
V

Simple PWM Generation Circuit

A pulse-width modulated (PWM) signal generator can be made utilizing both comparators in the IC (Figure 9). The capacitor/feedback resistor combination on INA- deter­mines the switching frequency and the analog control voltage determines the pulse width.
V
CC
R2
R4
Figure 8. Charging Network Corresponding to Logic-High Output
V
CC
R1
R3 R5
R
THEVENIN
C1
V
THEVENIN
R4
V
CC
R2
V
CC
T_FALL
C1
R1
R3
V
T_FALL
C1 WAVEFORM
V
T_RISE
OUT
WAVEFORM

Figure 7. Relaxation Oscillator Waveforms Figure 9. PWM Generator

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C1
ANALOG
CONTROL
VOLTAGE
INA-
MAX44269
GND
OUT
R5
V
CC
R6
MAX44269
=+−
1.3mm x 1.3mm, Low-Power Dual Comparator

Window Detector Circuit

The IC is ideal for window detectors (undervoltage/over­voltage detectors). Figure 10 shows a window detector circuit for a single-cell Li+ battery with a 2.9V end-of-life charge, a peak charge of 4.2V, and a nominal value of
3.6V. Choose different thresholds by changing the values of R1, R2, and R3. OUTA provides an active-low under­voltage indication, and OUTB provides an active-low overvoltage indication. The open-drain outputs of both the comparators are wired OR to give an active-high power-good signal.
The design procedure is as follows:
1) Select R1. The input bias current into INB- is less than 15nA, so the current through R1 should exceed 1.5µA for the thresholds to be accurate. In this example, choose R1 = 825kI (1.24V/1.5µA).
2) Calculate R2 + R3. The overvoltage threshold should be 4.2V when VIN is rising. The design equation is as follows:


V
+=
R2 R3 R1 x 1
=
825 x 1
=1969k
OTH


V

REF



4.2



1.24



Board Layout and Bypassing

Use 1.0FF bypass capacitors from VCC to GND. To maxi­mize performance, minimize stray inductance by putting this capacitor close to the VCC pin and reducing trace lengths.
= 4.2V
V
OTH
= 2.9V
V
UTH
V
IN
R3
INA+
R2
REF
1.24V
GND
R1

Figure 10. Window Detector Circuit

INA-
INB+
INB-
5V
MAX44269
GND
V
CC
OUTA
OUTB
POWER GOOD
3) Calculate R2. The undervoltage threshold should be
2.9V when VIN is falling. The design equation is as follows:

V
R2 (R1 R2 R3)x R1
=++
825 1969 x 1.24 / 2.9 825
( ) ( )
( )
=
370k
REF

V
UTH

For this example, choose a 374kI standard value 1%
resistor.
4) Calculate R3:
R3 (R2 R3) R2
=+−
1969k 374k
= Ω−
=1.595M
For this example, choose a 1.58MI standard value 1% resistor.
���������������������������������������������������������������� Maxim Integrated Products 12

Chip Information

PROCESS: BiCMOS

Ordering Information

PART TEMP RANGE
MAX44269EWL+T
+Denotes a lead(Pb)-free/RoHS-compliant package.
T = Tape and reel.
-40NC to +85NC
PIN-
PACKAGE
9 WLP +AJL
TOP
MARK
MAX44269
1.3mm x 1.3mm, Low-Power Dual Comparator

Package Information

For the latest package outline information and land patterns (footprints), go to www.maxim-ic.com/packages. Note that a “+”, “#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status.
PACKAGE TYPE PACKAGE CODE OUTLINE NO. LAND PATTERN NO.
9 WLP W91B1-6
21-0430
Refer to Application Note 1891
���������������������������������������������������������������� Maxim Integrated Products 13
MAX44269
1.3mm x 1.3mm, Low-Power Dual Comparator

Revision History

REVISION
NUMBER
0 9/11 Initial release — 1 12/11 Revised Electrical Characteristics, Typical Operating Characteristics, and Figure 5. 3, 5, 6, 9, 10
REVISION
DATE
DESCRIPTION
CHANGED
PAGES
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits) shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 14
©
2011 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc.
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