MAX3866
2.5Gbps, +3.3V Combined
Transimpedance/Limiting Amplifier
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(VCCD = VCCS = +3.3V ±5% or VCCD = +5.0V ±10%, VCCS = open, Tj= -40°C to +120°C, unless otherwise noted. Typical values
are at +3.3V and T
j
= +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: CIN= total capacitance on IN.
Note 2: AC parameters are guaranteed by design and characterization.
Note 3: See
Typical Operating Characteristics
for worst-case distribution.
Note 4: Hysteresis = 20 log (V
DEASSERT
/ V
ASSERT
).
Note 5: I
IN
= 2.5mA.
Note 6: PWD = [(2 · Pulse Width) - Period] / 2.
Note 7: External load not required for normal operation.
VCCD Voltage .......................................................-0.5V to +7.0V
VCCS Voltage...............0 ≤ VCCS ≤ VCCD and if VCCD ≥ 3.13V
then 3.13V ≤ VCCS ≤ VCCD
CHF+, CHF-, FIL, INV, LOP Voltage.......-0.5V to (VCCD + 0.5V)
IN-, IN+ Voltage.....................................................-0.5V to +1.0V
CPD+, CPD- Voltage................(VCCD - 1.6V) to (VCCD + 0.5V)
OUT+, OUT- Voltage................(VCCD - 1.1V) to (VCCD + 0.5V)
IN Current.......................................................................0 to 3mA
PDC Current..................................................................-1mA to 0
Operating Junction Temperature Range (T
j
).....-55°C to +125°C
Storage Temperature Range.............................-60°C to +160°C
Processing Temperature (Die).........................................+400°C
Load = 4.7kΩ to V
CCD
(Note 7)
Load = 4.7kΩ to V
CCD
(Note 7)
RL= 100Ω (differential), IIN≥ 7µAp-p
RL= 100Ω (differential)
CONDITIONS
Ω90 105 120Z
OUT
Differential Output Impedance
V0.84 0.95V
IN
mA50 73I
VCC
Supply Current
Input Bias Voltage
VV
CCD
- 0.1 V
CCD
V
OH
LOP Output High Voltage
V0.4V
OL
LOP Output Low Voltage
mVp-p100 145V
OD
Differential Output Voltage Swing
VV
CCD
- 0.12V
CM
Output Common-Mode Voltage
UNITSMIN TYP MAXSYMBOLPARAMETER
(Notes 5, 6)
20% to 80% (Note 5)
RPD= 510Ω
RPD= 510Ω
CIN= 0.5pF, Tj= +120°C
2.5Gbps, 223- 1 PRBS, BER ≤ 10
-10
,
CIN= 0.5pF, Tj= +120°C
Electrical (Note 4), low LOP assert,
RPD= 510Ω
f ≤ 2MHz, 100mVp-p
CONDITIONS
ps21 80PWDPulse-Width Distortion
ps50 70tr, t
f
Output Edge Speed
µA8.0LOP Deassert Level
µA0.9LOP Assert Level
dB3LOP Hysteresis
dB25 30PSRRPower-Supply Rejection Ratio
kHz100f
L
Low-Frequency Cutoff
nA433 566N
IN
Input-Referred RMS Noise
µAp-p7.8 (Note 3)I
IN
Input Sensitivity
GHz1.8BWSmall-Signal Bandwidth
UNITSMIN TYP MAXSYMBOLPARAMETER
AC ELECTRICAL CHARACTERISTICS
(VCCD = VCCS = +3.3V ±5% or VCCD = +5.0V ±10%, VCCS = open, Tj= -40°C to +120°C, unless otherwise noted. Typical values
are at +3.3V and T
j
= +25°C.) (Notes 1, 2)