Datasheet MAX3665EUA, MAX3665E-D Datasheet (Maxim)

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19-1601; Rev 0; 1/00
________________General Description
The MAX3665 low-power transimpedance preamplifier for 622Mbps SDH/SONET applications consumes only 70mW at VCC= 3.3V. Operating from a single +3.3V or +5.0V supply, it converts a small photodiode current to a measurable differential voltage. A DC cancellation circuit provides a true differential output swing over a wide range of input current levels, thus reducing pulse-width distortion. The differential outputs are back-terminated with 50per side.
The overall transimpedance gain is nominally 8k. For input signal levels beyond approximately 50µAp-p, the amplifier will limit the output swing to 250mV. The MAX3665’s low 55nA input noise provides a typical sensitivity of -33.2dBm in 1300nm, 622Mbps receivers.
The MAX3665 is designed to be used in conjunction with the MAX3676 clock recovery and data retiming IC with limiting amplifier. Together they form a complete
3.3V or 5.0V 622Mbps SDH/SONET receiver.
In die form, the MAX3665 is designed to fit on a header with a PIN diode. It includes a filter connection that pro­vides positive bias for the photodiode through a 1.5k resistor to VCC. The device is available in an 8-pin µMAX package.
________________________Applications
SDH/SONET Receivers
PIN Photodiode Preamplifiers and Receivers
Regenerators for SDH/SONET
____________________________Features
+3.3V or +5.0V Single-Supply Operation
55nA
RMS
Input-Referred Noise
70mW Power Consumption at V
CC
= 3.3V
8kGain
450µA Peak Input Current
260ps max Deterministic JitterDifferential Output Drives 100Load
470MHz Bandwidth
MAX3665
622Mbps, Ultra-Low-Power, 3.3V
Transimpedance Preamplifier for SDH/SONET
________________________________________________________________ Maxim Integrated Products 1
__________________________________________________Typical Application Circuit
PART
MAX3665EUA -40°C to +85°C
TEMP. RANGE PIN-PACKAGE
8 µMAX
EVALUATION KIT
AVAILABLE
_______________Ordering Information
Pin Configuration appears at end of data sheet.
Note: Dice are designed to operate over a -40°C to +140°C
junction temperature (T
j
) range, but are tested and guaranteed
at T
A
= +25°C.
MAX3665E/D (see Note) Dice
C
FILT
FILT
IN
R
1.5k
FILT
3.3V
0.01µF
V
CC
GND
MAX3665
OUT+
OUT-
50
50
0.1µF
0.1µF
3.3V
LIMITING
MAX3676
AMP
CLOCK
AND
DATA
RECOVERY
CLK
DATA
MAX3665
622Mbps, Ultra-Low-Power, 3.3V Transimpedance Preamplifier for SDH/SONET
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(VCC= +3.3V ±10% or +5.0V ±10%, 100load between OUT+ and OUT-, TA= -40°C to +85°C. Typical values are at VCC= +3.3V, T
A
= +25°C, unless otherwise noted.)
AC ELECTRICAL CHARACTERISTICS
(VCC= +3.3V ±10% or +5.0V ±10%, 100load between OUT+ and OUT-, source capacitance = 0.5pF, TA= -40°C to +85°C. Typical values are at V
CC
= +3.3V, TA= +25°C, unless otherwise noted.) (Notes 1 and 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: AC characteristics are guaranteed by design. Note 2: Measured with a 3-pole filter at the output. C
IN
= 0.5pF, IIN= 0, C
FILT
= 1000pF.
Note 3: PSRR = -20log (∆V
OUT
/ ∆VCC).
V
CC
........................................................................-0.5V to +6.5V
Continuous Current at IN ....................................................±5mA
Voltage at OUT+, OUT- ...................(V
CC
- 1.5V) to (VCC+ 0.5V)
Voltage at FILT ...........................................-0.5V to (VCC+ 0.5V)
Continuous Power Dissipation (T
A
= +85°C)
8-Pin µMAX (derate 4.5mW/°C above +85°C) ...........295mW
Operating Junction Temperature (die) ..............-55°C to +150°C
Processing Temperature (die) .........................................+400°C
Storage Temperature Range .............................-55°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
I
IN
= 0
IIN= 0 to 10µAp-p
IIN= 0 to 300µA
IIN= 450µAp-p
Differential output
IIN= 300µA
CONDITIONS
mA
21 30
I
CC
Supply Current
%
±5
V
0.8 0.95
V
IN
Input Bias Voltage
Gain Nonlinearity
k
1.5
R
FILT
Filter Resistor
mVp-p
260 450
V
OUT(MAX)
Maximum Output Voltage
k
78
z
21
Small-Signal Transimpedance
V
VCC- 0.15
Output Common-Mode Voltage
mV
±5
V
OUT
Differential Output Offset
48 50 52
Z
OUT
Output Impedance (per side)
UNITSMIN TYP MAXSYMBOLPARAMETER
-3dB with IIN= 5µA
Relative to gain at 10MHz
2
13
- 1 PRBS with 100 CIDs
CONDITIONS
kHz
20 40
MHz
404 470
BW
-3dB
Small-Signal Bandwidth
Low-Frequency Cutoff
100 260
psJ
D
Deterministic Jitter
UNITSMIN TYP MAXSYMBOLPARAMETER
RMS Noise Referred to Input i
n
55 72
nA
Power-Supply Rejection Ratio PSRR
f < 1MHz, differential referred to output, VCC= 30mVp-p (Note 3)
36 47
dB
MAX3665
622Mbps, Ultra-Low-Power, 3.3V
Transimpedance Preamplifier for SDH/SONET
_______________________________________________________________________________________ 3
__________________________________________Typical Operating Characteristics
(VCC= +3.3V, includes off-chip filter, see Figure 3b, TA= +25°C, unless otherwise noted.)
INPUT-REFERRED NOISE
vs. TEMPERATURE
100
90
80
70
60
50
40
30
RMS NOISE CURRENT (nA)
20
10
0
-40 -20 0 20 40 60 80 100
C
= 1.5pF
IN
C
= 1pF
IN
C
= 0.5pF
IN
CIN IS SOURCE CAPACITANCE PRESENTED TO DIE. IINCLUDES PACKAGE PARASITIC, PIN DIODE, AND PARASITIC INTERCONNECT CAPACITANCE.
JUNCTION TEMPERATURE (°C)
INPUT-REFERRED NOISE
vs. DC INPUT CURRENT
250
SOURCE CAPACITANCE = 0.5pF
200
150
100
RMS NOISE CURRNENT (nA)
50
0
0.1 1 10
DC INPUT CURRENT (µA)
100 1000
MAX3665 TOC01
MAX3665 toc04
SMALL-SIGNAL GAIN
vs. FREQUENCY
79
78
77
76
75
74
GAIN (dB)
73
72
71
70
69
10k 100k 1M 10M 100M 1G
FREQUENCY (Hz)
SMALL-SIGNAL TRANSIMPEDANCE
vs. TEMPERATURE
TRANSIMPEDANCE ()
8100
8000
7900
7800
7700
7600
7500
7400
VCC = 5.0V
VCC = 3.3V
-40 0 20-20 40 60 80 100
AMBIENT TEMPERATURE (°C)
MAX3665 toc02
PWD (ps)
MAX3665 toc05
PWD (ps)
PULSE-WIDTH DISTORTION vs.
TEMPERATURE (INPUT = 100µAp-p)
50
45
40
35
30
25
20
15
VCC = 3.3V
10
5
0
-40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE (°C)
VCC = 5.0V
PULSE-WIDTH DISTORTION vs.
TEMPERATURE (INPUT = 450µAp-p)
50
45
40
35
30
25
20
15
10
5
0
-40 -20 0 20 40 60 80 100
V
= 3.3V
CC
V
= 5.0V
CC
AMBIENT TEMPERATURE (°C)
MAX3665 toc03
MAX3665 toc06
BANDWIDTH vs. TEMPERATURE
575
V
= 3.3V or 5.0V
CC
550
525
500
475
BANDWIDTH (MHz)
450
425
400
-40 0 20-20 40 60 80 100 AMBIENT TEMPERATURE (°C)
160
140
MAX2665 toc07
120
100
80
60
PEAK-TO-PEAK JITTER (ps)
40
20
0
DATA-DEPENDENT JITTER
vs. INPUT SIGNAL AMPLITUDE
VCC = 3.3V
VCC = 5.0V
0 150 20050 100 250 300 350 400 450
PEAK-TO-PEAK AMPLITUDE (µA)
OUTPUT COMMON-MODE VOLTAGE
(REFERENCED TO V
-0.10
-0.11
MAX3665-08
-0.12
-0.13
-0.14
-0.15
-0.16
-0.17
COMMON-MODE VOLTAGE (V)
-0.18
-0.19
-0.20
-40 -20 0 20 40 60 80 100
) vs. TEMPERATURE
CC
V
= 3.3V
CC
V
= 5.0V
CC
AMBIENT TEMPERATURE (°C)
MAX3665 toc09
________________Detailed Description
The MAX3665 is a transimpedance amplifier designed for 622Mbps SDH/SONET applications. It comprises a transimpedance amplifier, a paraphase amplifier with CML differential outputs, and a DC cancellation loop. Figure 1 shows a functional diagram of the MAX3665.
Transimpedance Amplifier
The signal current at IN flows into the summing node of a high-gain amplifier. Shunt feedback through RFconverts this current to a voltage. Diodes D1 and D2 clamp the output voltage for large input currents.
MAX3665
622Mbps, Ultra-Low-Power, 3.3V Transimpedance Preamplifier for SDH/SONET
4 _______________________________________________________________________________________
_____________________________Typical Operating Characteristics (continued)
(VCC= +3.3V, includes off-chip filter, see Figure 3b, TA= +25°C, unless otherwise noted.)
150
200
300
250
350
400
-40 0-20 20 40 60 80 100
DIFFERENTIAL OUTPUT AMPLITUDE
vs. TEMPERATURE (INPUT = 450µAp-p)
MAX3665 toc10
AMBIENT TEMPERATURE (°C)
PEAK-TO-PEAK AMPLITUDE (mV)
VCC = 5.0V
VCC = 3.3V
EYE DIAGRAM
(INPUT = 10µAp-p)
15mV/div
MAX3665-11
200ps/div
INPUT: 213 - 1 PRBS CONTAINS 100 ZEROS
EYE DIAGRAM
(INPUT = 450µAp-p)
50mV/div
MAX3665-12
200ps/div
INPUT: 213 - 1 PRBS CONTAINS 100 ZEROS
_____________________Pin Description
NAME FUNCTION
1
V
CC
+3.3V or +5.0V Supply Voltage
2 IN Signal Input (from photodiode)
PIN
3 N.C.
No Connection. Not internally con­nected.
4 FILT
On-Chip Resistor for Filtering Photodiode Supply Voltage
7 OUT-
Inverting Voltage Output. Current flow­ing into IN causes V
OUT-
to decrease.
6 OUT+
Noninverting Voltage Output. Current flowing into IN causes V
OUT+
to
increase.
5, 8 GND Ground
Figure 1. Functional Diagram
V
AMP
CC
1.5k
R1
50
V
CC
R2
R5
50
Q3
D2
D1
R
F
V
CC
IN
Q1
R7
V
CC
PARAPHASE
FILT
V
CC
OUT+
Q2
OUT-
Q5
Q4
REFERENCE AMP
DC
CANCELLATION
AMP
GND
R6
R4
R3
MAX3665
Paraphase Amplifier
The paraphase amplifier converts single-ended inputs to differential outputs, and introduces a voltage gain. This signal drives a differential pair of transistors, Q2 and Q3, which form the output stage. Resistors R1 and R2 provide back-termination at the output, absorbing reflections between the MAX3665 and its load.
The differential outputs are designed to drive a 100 load between OUT+ and OUT-. They can also drive higher output impedances, resulting in increased gain and output voltage swing.
DC Cancellation Loop
The DC cancellation loop removes the DC component of the input signal by using low-frequency feedback. This feature centers the signal within the MAX3665’s dynamic range, reducing pulse-width distortion on large input signals.
The output of the transimpedance amplifier is sensed through resistors R3 and R4 and then filtered, amplified, and fed back to the base of transistor Q4. The transistor draws the DC component of the input signal away from the transimpedance amplifier’s summing node.
Connect a 400pF or larger capacitor (C
FILT
) between FILT and case ground for TO header, die-mounted oper­ation. Increasing C
FILT
improves PSRR. The DC cancel-
lation loop can sink up to 300µA of current at the input.
The MAX3665 minimizes pulse-width distortion for data sequences that exhibit a 50% mark density. A mark density other than 50% causes the device to generate pulse-width distortion.
DC cancellation current is drawn from the input and adds noise. For low-level signals with little or no DC component, this is not a problem. Preamplifier noise will increase for signals with a significant DC component.
___________Applications Information
The MAX3665 is a low-noise, wide-bandwidth transim­pedance amplifier that is ideal for 622Mbps SDH/ SONET receivers. Its features allow easy design into a fiber optic module, in three simple steps.
Step 1: Selecting a Preamplifier for a 622Mbps Receiver
Fiber optic systems place requirements on the band­width, gain, and noise of the transimpedance preampli­fier. The MAX3665 optimizes these characteristics for SDH/SONET receiver applications that operate at 622Mbps.
In general, the bandwidth of a fiber optic preamplifier should be 0.6 to 1 times the data rate. Therefore, in a 622Mbps system, the bandwidth should be between
375MHz and 622MHz. Lower bandwidth causes pat­tern-dependent jitter and a lower signal-to-noise ratio, while higher bandwidth increases thermal noise. The MAX3665 typical bandwidth is 470MHz, making it ideal for 622Mbps applications.
The preamplifier’s transimpedance must be high enough to ensure that expected input signals generate output levels exceeding the sensitivity of the limiting amplifier (quantizer) in the following stage. The MAX3676 clock recovery and limiting amplifier IC has an input sensitivity of 3.6mVp-p, which means that
3.6mVp-p is the minimum signal amplitude required to produce a fully limited output. Therefore, when used with the MAX3665, which has an 8ktransimpedance, the minimum detectable photodetector current is 450nAp-p.
It is common to relate peak-to-peak input signals to average optical power. The relationship between opti­cal input power and output current for a photodetector is called the responsivity (ρ), with units amperes per watt (A/W). The photodetector peak-to-peak current is related to the peak-to-peak optical power as follows:
Ip-p = (Pp-p)(ρ)
Based on the assumption that SDH/SONET signals maintain a 50% mark density, the following equations relate peak-to-peak optical power to average optical power and extinction ratio (Figure 2):
Average Optical Power = P
AVG
= (P0 + P1) / 2
Extinction Ratio = re= P1 / P0
Peak-to-Peak Signal Amplitude = Pp-p = P1 - P0
MAX3665
622Mbps, Ultra-Low-Power, 3.3V
Transimpedance Preamplifier for SDH/SONET
_______________________________________________________________________________________ 5
Figure 2. Optical Power Definitions
POWER
P1
P
AVG
P0
TIME
MAX3665
Therefore,
P
AVG
= Pp-p (1 / 2)[(re+ 1) / (re- 1)]
Sensitivity is a key specification of the receiver module. The ITU/Bellcore specifications for SDH/SONET receivers require a link sensitivity of -27dBm with a bit error rate (BER) of 10
-10
. There is an additional 1dB power penalty to accommodate various system losses; therefore, the sensitivity of a 622Mbps receiver must be better than -28dBm.
Although several parameters affect sensitivity (such as the quantizer sensitivity and preamplifier gain, as previ­ously discussed), most fiber optic receivers are designed so that noise is the dominant factor. Noise from the high­gain transimpedance amplifier, in particular, determines the sensitivity. The noise generated by the MAX3665 can be modeled with a Gaussian distribution. In this case, a BER of 10
-10
corresponds to a peak-to-peak signal amplitude to RMS noise ratio (SNR) of 12.7. The MAX3665’s typical input-referred noise, in, (bandwidth­limited to 470MHz) is 55nA
RMS
. Therefore, the minimum
input for a BER of 10
-10
is (12.7 · 55nA) = 699nAp-p. Rearranging the previous equations in these terms results in the following relationship:
Optical Sensitivity (dBm) = 10log[(in/ ρ)(SNR)(1/2)(re+ 1) / (re- 1)(1000)]
At room temperature, with re= 10, SNR = 12.7, in= 55nA, and ρ = 0.9A/W, the MAX3665 sensitivity is
-33.2dBm. For worst-case conditions, noise increases to 72nA and sensitivity decreases to -32.1dBm. The MAX3665 provides 5.1dB margin over the SDH/SONET specifications, even at +85°C.
The MAX3665’s overload current (I
MAX
) is greater than 450µAp-p. The pulse-width distortion and input current are closely related. If the clock recovery circuit can accept more pulse-width distortion, a higher input current might be acceptable. For worst-case responsivity and extinction ratio, ρ = 1A/W and r
e
= , the input overload
is:
Overload (dBm) = -10log (I
MAX
)(1 / 2)(1000)
For I
MAX
= 450µA, the MAX3665 overload is -6.5dBm.
Step 2: Designing Filters
The MAX3665’s noise performance is a strong function of the circuit’s bandwidth, which changes over temper­ature and varies from lot to lot. The receiver sensitivity can be improved by adding filters to limit this band­width. Filter designs can range from a one-pole filter using a single capacitor, to more complex filters using inductors. Figure 3 illustrates two examples: the simple filter provides moderate roll-off with minimal compo-
nents, while the complex filter provides a sharper roll­off. Parasitics on the PC board will affect the filter char­acteristics. Refer to the MAX3665 EV kit data sheet for a layout example of the filter shown in Figure 3b.
Supply voltage noise at the cathode of the photodiode produces a current I = C
PHOTO
(V/t), which reduces
the receiver sensitivity. C
PHOTO
is the photodiode
capacitance.
The FILT resistor of the MAX3665, combined with an external capacitor (see Typical Operating Circuit) can be used to reduce this noise. The external capacitor (C
FILT
) is placed in parallel with the photodiode. Current generated by supply noise is divided between C
FILT
and C
PHOTO
. The input noise current due to sup­ply noise is (assuming the filter capacitor is much larger than the photodiode capacitance):
622Mbps, Ultra-Low-Power, 3.3V Transimpedance Preamplifier for SDH/SONET
6 _______________________________________________________________________________________
Figure 3. Filter Design Examples
VC
()( )
I
NOISE
a) SIMPLE, 1-POLE, 530MHz FILTER
MAX3665
50
1.2pF
50
b) 3-POLE, 515MHz FILTER
MAX3665
50
1.2pF
50
NOISE PHOTO
=
RC
()()
FILT FILT
C1 5pF
22nH
4pF 5pF
22nH REFER TO THE MAX3665 EV KIT DATA SHEET FOR THE FILTER LAYOUT EXAMPLE.
R
L
100
R
L
100
If the amount of tolerable noise is known, then the filter capacitor can be easily selected:
For example, with maximum noise voltage = 100mVp-p, C
PHOTO
= 0.5pF, R
FILT
= 1.5k, and I
NOISE
selected
to be 6nA (1/10 of MAX3665 input-referred noise):
Figure 4 shows the suggested layout for a TO-46 header
Step 3: Designing a Low-Capacitance Input
Noise performance and bandwidth are adversely affected by stray capacitance on the input node. Select a low-capacitance photodiode and use good high-fre­quency design and layout techniques to minimize capacitance on this pin. The MAX3665 is optimized for
0.5pF of capacitance on the input—approximately the capacitance of a photodetector diode sharing a com­mon header with the MAX3665 in die form.
Photodiode capacitance changes significantly with bias voltage. With a +3.3V supply voltage, the reverse voltage on the PIN diode is only 2.5V. If a higher voltage supply is available, apply it to the diode to significantly reduce capacitance.
Take great care to reduce input capacitance. With the µMAX version of the MAX3665, the package capaci­tance is about 0.3pF, and the PC board between the MAX3665 input and the photodiode can add parasitic capacitance. Keep the input line short, and remove power and ground planes beneath it. Packaging the MAX3665 into a header with the photodiode provides the best possible performance. It reduces parasitic capacitance to a minimum, resulting in the lowest noise and the best bandwidth.
Wire Bonding
For high current density and reliable operation, the MAX3665 uses gold metallization. Make connections to the die with gold wire only, and use ball-bonding tech­niques (wedge-bonding is not recommended). Die-pad size is 4 mils square. Die thickness is 12 mils.
VCCand Ground
Use good high-frequency design and layout tech­niques. The use of a multilayer circuit board with sepa­rate ground and V
CC
planes is recommended. Take
care to bypass V
CC
and to connect the GND pin to the
ground plane with the shortest possible traces.
MAX3665
622Mbps, Ultra-Low-Power, 3.3V
Transimpedance Preamplifier for SDH/SONET
_______________________________________________________________________________________ 7
C =
FILT
C = 0.1
FILT
()
()
V
()( )
NOISE
()( )
−−
⋅⋅
0 5 10 1500 6 10 5 6
. / . nF
C
PHOTO
RI
FILT NOISE
12 4
()
()
=
MAX3665
622Mbps, Ultra-Low-Power, 3.3V Transimpedance Preamplifier for SDH/SONET
8 _______________________________________________________________________________________
Figure 4. Suggested Layout for TO-46 Header
V
CC
FILTER CAP
OUT+
IN V
FILT
GND
OUT+ OUT-
CC
GND
OUT-
MAX3665
622Mbps, Ultra-Low-Power, 3.3V
Transimpedance Preamplifier for SDH/SONET
_______________________________________________________________________________________ 9
___________________Pin Configuration ___________________Chip Topography
TRANSISTOR COUNT: 443
SUBSTRATE CONNECTED TO GND
TOP VIEW
V
N.C.
FILT
1
CC
2
IN
MAX3665
3
4
µMAX
8
GND
OUT-
7
OUT+
6
5
GND
GND
FILT IN V
IN
CC
GND
0.05"
(1.27mm)
OUT+ OUT-
0.03"
(0.76mm)
MAX3665
622Mbps, Ultra-Low-Power, 3.3V Transimpedance Preamplifier for SDH/SONET
10 ______________________________________________________________________________________
________________________________________________________Package Information
8LUMAXD.EPS
MAX3665
622Mbps, Ultra-Low-Power, 3.3V
Transimpedance Preamplifier for SDH/SONET
______________________________________________________________________________________ 11
NOTES
MAX3665
622Mbps, Ultra-Low-Power, 3.3V Transimpedance Preamplifier for SDH/SONET
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
12 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2000 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.
NOTES
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