MAXIM MAX3570, MAX3571, MAX3573 User Manual

19-0067; Rev 0; 2/05

可提供评估板

高中频(HI-IF)单片宽带调谐器

_________________________________

概述

MAX3570/MAX3571/MAX3573低成本、宽带、两次变频调
谐器芯片设计用于数字电视接收机。每款芯片集成了所
有必需的射频功能模块，其中包括一个集成的高中频滤
波器、全集成VCO、中频VGA。工作频率范围从50MHz
至878MHz，同时提供超过60dB的RF及IF可控增益范围。
MAX3570/MAX3571具有以44MHz为中心的中频频率，而
MAX3573具有以36MHz为中心的中频输出。

这三款芯片都包括了可变增益射频前端，噪声系数仅为
8dB。双频合成器产生两个本振 (LO) 频率，提供优异的
相位噪声性能，在10kHz频偏时相位噪声为-86dBc/Hz。集
成的高中频(HI-IF ) 滤波器有55dBc (典型值) 的镜像抑制。
仅需要一个中频SAW滤波器、无源环路滤波器和晶体振
荡器即可构建完整的单芯片调谐器。MAX3570芯片编程
和配置由3线串行接口完成，而MAX3571/MAX3573芯片
编程和配置由2线串行接口完成。

MAX3570/MAX3571/MAX3573采用48引脚QFN-EP封装，
可工作于商业温度范围 (0°C 至 +70°C)。

_________________________________

应用

DVB-C数字电视接收机

ATSC数字电视接收机

有线电视调制解调器

DOCSIS/EURO DOCSIS调制解调器

ITU J.83数字机顶盒

_____________________________

PART SERIAL INTERFACE

MAX3570 3-Wire 44

MAX3571 2-Wire 44

MAX3573 2-Wire 36

选择指南

IF CENTER

FREQUENCY

(MHz)

___________________________________ 特性

全集成HI-IF滤波器

♦

全集成VCO，无需外部元器件和走线。

♦

8dB低噪声系数

♦

高线性—大于54dBc, CSO, CTB, X-MOD。

♦

业界最小的封装

♦

优异的相位噪声，可用于256-QAM、8-VSB和

♦

COFDM。

______________________________

PART TEMP RANGE PIN-PACKAGE

MAX3570CGM 0°C to +70°C 48 QFN-EP*

MAX3571CGM 0°C to +70°C 48 QFN-EP*

MAX3573CGM 0°C to +70°C 48 QFN-EP*

*

EP = 裸露焊盘。

定购信息

_____________________ 引脚排列和功能框图

IFIN-

OSCIN

IFIN+

GND

V

CC

GND

36

35

34

33

32

31

30

29

28

27

26

25

IFOUT1-

IFOUT1+

GND

V

CC

GND

V

CC

TUNE2

LOCFLT2

GND

V

CC

CPOUT2

V

CC

HI-IF

FILTER

CPOUT1

IFOUT2+

CC

V

CC

V

GND

IFVGA

OSCOUT

RFIN+

RFIN-

GND

GND

TUNE1

LOCFLT1

GND

RFVGA

GND

V

BIAS

CC

DIV/LD

VCCIFOUT2-

I.C.

DUAL SYNTHESIZER

LNABIAS

48 47 46 45 44 43 42 41 40 39 38 37

V

1

CC

2

3

4

V

5

CC

6

V

7

CC

8

9

10

11

I.C.

12

CS

MAX3570

3-WIRE SERIAL

INTERFACE

13 14 15 16 17 18 19 20 21 22 23 24

SCL

SDA

引脚排列和功能框图 (续) 见本数据手册的最后。

MAX3570/MAX3571/MAX3573

________________________________________________________________ Maxim Integrated Products 1

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高中频(HI-IF)单片宽带调谐器

ABSOLUTE MAXIMUM RATINGS

VCCto GND...........................................................-0.3V to +5.5V

IFIN_, IFOUT1_, IFOUT2_, RFIN_, TUNE_,

LOCFLT_, CPOUT_, OSCIN, OSCOUT,
IFVGA, RFVGA, BIAS, LNABIAS,

ADDR_, CS, SCL, SDA, DIV/LD...............-0.3V to (V

CAUTION! ESD SENSITIVE DEVICE

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

CC

+ 0.3V)

Continuous Power Dissipation (T

48-Pin QFN (derate 27mW/°C above +70°C) ............2162mW

Operating Temperature Range...............................0°C to +70°C

Junction Temperature......................................................+150°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

DC ELECTRICAL CHARACTERISTICS

(MAX357_ EV kit, VCC= +4.75V to +5.25V, R
Typical values are at V

PARAMETER CONDITIONS MIN TYP MAX UNITS

SUPPLY VOLTAGE AND SUPPLY CURRENT

Supply Voltage 4.75 5.25 V

Supply Current

= +5.0V, TA= +25°C, unless otherwise noted.) (Note 1)

CC

MAX3570/MAX3571/MAX3573

RF and IF VGA Input Bias Current V

RF and IF VGA Control Voltage

LOGIC INTERFACE

Input-Logic Low (VIL) 0.9 V

Input-Logic High (VIH) 2.3 V

Input Logic Current -10 +10 µA

Output-Logic Low Sink current = 3mA 0.4 V

Output-Logic High Source current = 3mA 2.8 V

= 5.9kΩ ±1%, no AC signal applied, TA= 0°C to +70°C, unless otherwise noted.

BIAS

At TA = +25°C, V

= +70°C, V

At T

A

= V

RFVGA

Maximum gain 3

Minimum gain 0.5

IFVGA

= +3.0V 320

RFVGA

= +0.5V 385

RFVGA

= +0.5V and +3.0V -50 +50 µA

= +70°C)

A

mA

V

2 _______________________________________________________________________________________

高中频(HI-IF)单片宽带调谐器

AC ELECTRICAL CHARACTERISTICS

MAX3570/MAX3571/MAX3573

(MAX357_ EV kit, VCC= +4.75V to +5.25V, R

45.75MHz (MAX3570/MAX3571), f
wise noted. Typical values are at V

= 38.9MHz (MAX3573), f

IF

= +5.0V, TA= +25°C, unless otherwise noted.) (Note 1)

CC

PARAMETER CONDITIONS MIN TYP MAX UNITS

OVERALL REQUIREMENTS (RF INPUT TO 1st IF OUTPUT)

Operating Frequency Range Gain specification met across this frequency band 50 878 MHz

Input Return Loss Worst case across band, 75Ω, any RFVGA setting 8 dB

Z

Voltage Gain

SOURCE

V

RFVGA

Gain-Reduction Range Measured at 50MHz 30 dB

V

Gain Flatness

Noise Figure V

IIP2

IIP3

RFVGA

V

RFVGA

RFVGA

V

RFVGA

V

CC

At 12dB gain reduction, T
V

CC

V

RFVGA

V

CC

At 12dB gain reduction, T
V

CC

Beats within Output 0dBmV PIX carrier level (Note 2) -48 dBc

Channel Flatness From PIX to (PIX + 4) MHz -0.5 +0.3 +1.0 dB

Isolation 5M Hz to 150M H z, RF i np ut to IF output (N ote 3) -63 -68 dBc

Measured at 91MHz above desired PIX

Image Rejection

(MAX3570/MAX3571)

Measured at 77.75MHz above desired PIX
(MAX3573)

Spurious at RF Input (Note 3)

Single Sideband Phase Noise

50MHz to 878MHz -54 -48

Above 878MHz (LO and LO harmonics) +3

f

OFFSET

f

OFFSET

f

OFFSET

Output Return Loss Balanced, 50Ω 9dB

= 5.9kΩ ±1%, inputs terminated to 75Ω, f

BIAS

= 75Ω, Z

= +3.0V

= +3.0V at f

= 0.5V at f

LOAD

RFIN

= 1MHz, f

COMP1

= 200Ω,

= 878MHz vs. 50MHz -1.5 +1.5

RFIN

COMP2

TA = +25°C 31.5 38.5 45.0

= +70°C 30.0 37 43.5

T

A

= 878MHz vs. 50MHz -2 +2

= 62.5kHz, TA= 0°C to +70°C, unless other-

= 50MHz to 878MHz, fIF=

RFIN

= +3.0V 7.9 dB

= +3.0V, TA = +25°C to +70°C,

= 4.85V to 5.15V, fRF = 860MHz

= +25°C to +70°C,

A

= 4.85V to 5.15V, fRF = 860MHz

= +3.0V, TA = +25°C to +70°C,

= 4.85V to 5.15V

= +25°C to +70°C,

A

= 4.85V to 5.15V

34

52.5

+8

+18

50 55

50 55

= 1kHz -62

= 10kHz, BW

= 100kHz, BW

= 2.5kHz -86

LOOP

= 2.5kHz -105

LOOP

dB

dB

dBm

dBm

dBc

dBmV

dBc/Hz

_______________________________________________________________________________________ 3

高中频(HI-IF)单片宽带调谐器

AC ELECTRICAL CHARACTERISTICS

(MAX357_ EV kit, VCC= +4.75V to +5.25V, R

= 0°C to +70°C, unless otherwise noted. Typical values are at VCC= +5.0V, TA= +25°C, unless otherwise noted.) (Note 1)

T

A

PARAMETER CONDITIONS MIN TYP MAX UNITS

SECOND IF STAGE

Input Impedance Balanced 1.7 kΩ

Output Impedance Balanced (Note 3) 100 Ω

Passband Voltage Gain

Passband Flatness

Maximum Output Voltage 3.2 V

VGA Gain Slope V

-3dB Bandwidth (Note 3) 180 MHz

Noise Figure fIF = 44MHz, V

Noise Figure vs. Attenuation First 10dB back-off 0.3 dB/dB

IIP3

OIP3 V

PSRR 50mV

MAX3570/MAX3571/MAX3573

Z

V

From PIX to (PIX - 4) MHz for 45.75MHz PIX
frequency (Note 3)

Gain = 45dB, V

Gain = 27dB, V

= 5.9kΩ ±1%, inputs terminated to 1kΩ, Z

BIAS

= 1.1kΩ, Z

SOURCE

= +0.5V 14.5 23

IFVGA

= +3.0V to +0.5V 10 20 dB/V

IFVGA

IFVGA

OUT

OUT

OUT

= 1.5V

P-P

, V

P-P

at 200kHz -57 dB

= 300Ω, V

LOAD

= +3.0V 5.1 dB

= 1.5V

P-P

= 1.5V

P-P

= +3.0V to +0.5V (Note 3) 25 dBm

IFVGA

= +3.0V 50 53 57

IFVGA

= 300Ω, fIF= 40MHz to 48MHz,

LOAD

0.2 dB

-27.5

-11.3

dB

P-P

dBm

4 _______________________________________________________________________________________

高中频(HI-IF)单片宽带调谐器

SYNTHESIZER ELECTRICAL CHARACTERISTICS

(MAX357_ EV kit, VCC= +4.75V to +5.25V, R
erwise noted. Typical values are at V

PARAMETER CONDITIONS MIN TYP MAX UNITS

1st LOCAL OSCILLATOR (LO1)

Tuning Range 1274 2111 MHz

VCO Tuning Gain 40 120 MHz/V

1st LOCAL OSCILLATOR (LO1) DIVIDER

RF1 N-Divider Ratio 256 8191

RF1 R-Divider Ratio 131

1st LOCAL OSCILLATOR (LO1) PHASE DETECTOR AND CHARGE PUMP

Phase-Detector Phase Noise f

Charge-Pump Source/Sink Matching Correlate locked vs. unlocked 6 %

Charge-Pump Tri-State Current RF1 -7 +7 nA

2nd LOCAL OSCILLATOR (LO2)

Tuning Range 1175 1193 MHz

VCO Tuning Gain 25 70 MHz/V

2nd LOCAL OSCILLATOR (LO2) DIVIDER

RF2 N-Divider Ratio 512 65,535

RF2 R-Divider Ratio 2 127

2nd LOCAL OSCILLATOR (LO2) PHASE DETECTOR AND CHARGE PUMP

Phase-Detector Phase Noise f

Charge-Pump Source/Sink Matching Correlate locked vs. unlocked 6 %

Charge-Pump Tri-State Current RF2 -7 +7 nA

= +5.0V, TA= +25°C, unless otherwise noted.) (Note 1)

CC

= 5.9kΩ ±1%, f

BIAS

OFFSET

OFFSET

= 1MHz, f

COMP1

= 2kHz (Note 3) -142 dBc

= 2kHz (Note 3) -142 dBc

= 62.5kHz, TA= 0°C to +70°C, unless oth-

COMP2

MAX3570/MAX3571/MAX3573

LOGIC INTERFACE

(MAX357_ EV kit, VCC= +4.75V to +5.25V, R

PARAMETER CONDITIONS MIN TYP MAX UNITS

Maximum Clock Frequency 400 kHz

Note 1: These parameters are production tested from TA= +25°C to +70°C, and are guaranteed by design and characterization at

T

= 0°C.

Note 2: When using the tuning table provided in the EV kit documentation.
Note 3: These parameters are guaranteed by design and characterization, and are not production tested.

A

_______________________________________________________________________________________ 5

= 5.9kΩ ±1%, TA= 0°C to +70°C, unless otherwise noted.) (Note 1)

BIAS

高中频(HI-IF)单片宽带调谐器

300

320

340

360

380

400

25 40 4530 35 50 55 60 65 70

SUPPLY CURRENT vs. TEMPERATURE

MAX3570/71/73 toc01

TEMPERATURE (°C)

SUPPLY CURRENT (mA)

12dB ATTENTUATION

MAXIMUM GAIN

-20

0

-10

20

10

40

30

50

0 1.0 1.50.5 2.0 2.5 3.0

VOLTAGE GAIN

vs. RFVGA VOLTAGE

MAX3570/71/73 toc02

RFVGA VOLTAGE (V)

VOLTAGE GAIN (dB)

36

39

38

37

40

VOLTAGE GAIN

vs. SUPPLY VOLTAGE

MAX3570/71/73 toc03

SUPPLY VOLTAGE (V)

VOLTAGE GAIN (dB)

4.75 4.85 4.95 5.05 5.15 5.25

850MHz

50MHz

450MHz

VOLTAGE GAIN

vs. FREQUENCY (MAX GAIN)

MAX3570/71/73 toc04

FREQUENCY (MHz)

VOLTAGE GAIN (dB)

650450250

37

36

35

38

39

40

41

34

50 850

TA = +25°C

TA = +70°C

TA = +55°C

VOLTAGE GAIN

vs. FREQUENCY (MAX -12dB)

MAX3570/71/73 toc05

FREQUENCY (MHz)

VOLTAGE GAIN (dB)

650450250

23

24

25

26

27

28

29

22

50 850

TA = +25°C

TA = +70°C

TA = +55°C

7.0

8.0

7.5

9.0

8.5

9.5

10.0

50 450250 650 850

NOISE FIGURE vs. FREQUENCY

MAX3570/71/73 toc06

FREQUENCY (MHz)

NOISE FIGURE (dB)

TA = +70°C

TA = +25°C

TA = +55°C

NOISE FIGURE vs. VOLTAGE GAIN

MAX3570/71/73 toc07

VOLTAGE GAIN (dB)

NOISE FIGURE (dB)

37353331

10

12

14

16

18

20

8

29 39

TA = +70°C

TA = +55°C

TA = +25°C

-150

-120

-130

-140

-110

-100

-90

-80

-70

-60

-50

100 10k1k 100k 1M 10M

PHASE NOISE vs. OFFSET FREQUENCY

MAX3570/71/73 toc08

FREQUENCY (Hz)

PHASE NOISE (dBc/Hz)

-40

-30

-10

-20

0

10

IFOUT1 FREQUENCY RESPONSE

MAX3570/71/73 toc09

IF FREQUENCY (MHz)

AMPLITUDE (dB)

0 50 100 150

MAX3570/MAX3571

MAX3573

___________________________________________________________________

(MAX357_ EV kit, VCC= +5.0V, R
unless otherwise noted.)

= 5.9kΩ, fRF= 860MHz, fIF= 44MHz (MAX3570/MAX3571), 36MHz (MAX3573), TA= +25°C,

BIAS

MAX3570/MAX3571/MAX3573

典型工作特性

6 _______________________________________________________________________________________