MAXIM MAX3394E, MAX3395E, MAX3396E User Manual

General Description

The MAX3394E/MAX3395E/MAX3396E bidirectional
level translators provide level shifting required for data
transfer in a multivoltage system. Internal slew-rate
enhancement circuitry features 10mA current-sink and
15mA current-source drivers to isolate capacitive loads
from lower current drivers. In open-drain systems, slew­rate enhancement enables fast data rates with larger
pullup resistors and increased bus load capacitance.
Externally applied voltages, V

CC

and VL, set the logic­high levels for the device. A logic-low signal on one I/O
side of the device appears as a logic-low signal on the
opposite I/O side, and vice-versa. Each I/O line is
pulled up to V

CC

or VLby an internal pullup resistor,
allowing the devices to be driven by either push-pull or
open-drain drivers.

The MAX3394E/MAX3395E/MAX3396E feature a tri­state output mode, thermal-shutdown protection, and
±15kV Human Body Model (HBM) ESD protection on
the VCCside for greater protection in applications that
route signals externally.

The MAX3394E/MAX3395E/MAX3396E accept V

CC

volt-

ages from +1.65V to +5.5V, and V

L

voltages from +1.2V

to V

CC

, making them ideal for data transfer between low
voltage ASIC/PLDs and higher voltage systems. The
MAX3394E/MAX3395E/MAX3396E operate at a guaran­teed data rate of 6Mbps with push-pull drivers and
1Mbps with open-drain drivers.

The MAX3394E is a dual-level translator available in
9-bump UCSP™ and 8-pin 3mm x 3mm TDFN packages.
The MAX3395E is a quad-level translator available in 12­bump UCSP, and 12-pin 4mm x 4mm TQFN packages.
The MAX3396E is an octal-level translator available in 20­bump UCSP and 20-pin 5mm x 5mm TQFN packages.
The MAX3394E/MAX3395E/MAX3396E operate over the
extended -40°C to +85°C temperature range.

Applications

Multivoltage Bidirectional Level Translation

SPI™, MICROWIRE™, and I2C Level Translation

Open-Drain Rise-Time Speed-Up

High-Speed Bus Fan-Out Expansion

Cell Phones

Telecom, Networking, Servers, RAID/SAN

Features

♦ ±15kV ESD Protection on I/O V

CC_

Lines

♦ Bidirectional Level Translation Without Direction

Pin

♦ I/O V

L_

and I/O V

CC_

10mA Sink-/15mA Source-

Current Capability

♦ Slew-Rate Enhancement Circuitry Supports

Larger Capacitive Loads or Larger External Pullup
Resistors

♦ 6Mbps Push-Pull/1Mbps Open-Drain Guaranteed

Data Rate

♦ Wide Supply-Voltage Range: Operation Down to

+1.2V on V

L

and +1.65V on V

CC

♦ Low Supply Current in Tri-State Output Mode

(3µA typ)

♦ Low Quiescent Current
♦ Thermal-Shutdown Protection
♦ UCSP, TDFN, and TQFN Packages

MAX3394E/MAX3395E/MAX3396E

±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/

Octal-Level Translators with Speed-Up Circuitry

________________________________________________________________

Maxim Integrated Products

1

19-3884; Rev 2; 2/07

For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.

12

34

8

7

6

5

V

L

I/O V

L

1

I/O V

L

2

GND

*CONNECT EXPOSED PAD TO GROUND

*EP

I/O V

CC

2

I/O V

CC

1

EN

V

CC

MAX3394E

TDFN

TOP VIEW
(LEADS ON BOTTOM)

+

Pin Configurations

Ordering Information

MICROWIRE is a trademark of National Semiconductor Corp.

SPI is a trademark of Motorola, Inc.

UCSP is a trademark of Maxim Integrated Products, Inc.

Note: All devices specified over the -40°C to +85°C operating
range.

+

Denotes lead(Pb)-free/RoHS-compliant package.

*

Future product—contact factory for availability.

**EP = Exposed paddle.

Pin Configurations continued at end of data sheet.

Selector Guide appears at end of data sheet.

PART PIN-PACKAGE PKG CODE

MAX3394EETA+T 8 TDFN-EP** T833-1

MAX3394EEBL+T 9 UCSP B9-5

MAX3395EETC+ 12 TQFN-EP** T1244-4

MAX3395EEBC+T 12 UCSP B12-1

MAX3396EEBP+T* 20 UCSP B20-1

MAX3396EETP+* 20 TQFN-EP** T2055-4

MAX3394E/MAX3395E/MAX3396E

±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/
Octal-Level Translators with Speed-Up Circuitry

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

(All voltages referenced to GND.)
V

CC

......................................................................... -0.3V to +6V

V

L

............................................................................ -0.3V to +6V

I/O V

CC_

...................................................... -0.3V to VCC+ 0.3V

I/O V

L_

........................................................... -0.3V to VL+ 0.3V

EN ........................................................................... -0.3V to +6V

Short-Circuit Duration I/O V

L_

, I/O V

CC_

to GND ..... Continuous

Maximum Continuous Current ........................................ ±50mA

Continuous Power Dissipation (T

A

= +70°C)

8-Pin TDFN (derate 18.2mW/°C above +70°C) ........ 1455mW

9-Bump UCSP (derate 4.7mW/°C above +70°C) ........ 379mW

12-Pin TQFN (derate 16.9mW/°C above +70°C) ........1349mW

12-Bump UCSP (derate 6.5mW/°C above +70°C) ..... 519mW

20-Pin TQFN (derate 20.8mW/°C above +70°C) ........1667mW

20-Bump UCSP (derate 10.0mW/°C above +70°C) .....800mW

Operating Temperature Range ......................... -40°C to +85°C

Storage Temperature Range ........................... -65°C to +150°C

Junction Temperature .....................................................+150°C

Bump Temperature (soldering) ...................................... +235°C

Lead Temperature (soldering, 10s) ............................... +300°C

ELECTRICAL CHARACTERISTICS

(VCC= +1.65V to +5.5V, VL= +1.2V to VCC; C

IOVL

≤ 15pF, C

IOVCC

≤ 15pF; TA= -40°C to +85°C, unless otherwise noted. Typical val-

ues are at T

A

= +25°C.) (Note 1)

POWER SUPPLY

VL Supply Range V

VCC Supply Range V

Supply Current from V

VCC Tri-State Supply Current I

VL Tri-State Supply Current I

LOGIC I/O

I/O VL_ Input-Voltage High
Threshold

I/O VL_ Input-Voltage Low
Threshold

I/O VL_ Internal Pullup DC
Resistance

I/O VL_ Source Current During
Low-to-High Transition

I/O VL_ Sink Current During High­to-Low Transition

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

CC

CC

L

I

CC

I

L

CC-3

L-3

V

IHL

V

ILL

R

I

IHL

I

ILL

L

I/O lines internally
pulled up

I/O lines internally
pulled up

EN = GND, TA = +25°C 3 6 µA

EN = GND, TA = +25°C 0.7 2 µA

EN = VCC or V

L

VL = +1.2V 15 mA

V

CC

= +1.65V 10 mA

1.2 V

1.65 5.50 V

MAX3394E 150

MAX3395E 300Supply Current from V

MAX3396E 600

MAX3394E 30

MAX3395E 30

MAX3396E 30

0.3 x
V

L

L

51020kΩ

CC

0.7 x
V

L

V

µA

µA

V

V

MAX3394E/MAX3395E/MAX3396E

±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/

Octal-Level Translators with Speed-Up Circuitry

_______________________________________________________________________________________ 3

ELECTRICAL CHARACTERISTICS (continued)

(VCC= +1.65V to +5.5V, VL= +1.2V to VCC; C

IOVL

≤ 15pF, C

IOVCC

≤ 15pF; TA= -40°C to +85°C, unless otherwise noted. Typical val-

ues are at T

A

= +25°C.) (Note 1)

I/O VL_ Low-to-High Transition
Threshold

I/O VL_ Output-Voltage Low V

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

V

L-TH

OLL

I/O VL_ Tri-State Output Leakage
Current

I/O VCC_ Input-Voltage High
Threshold

I/O VCC_ Input-Voltage Low
Threshold

I/O VCC_ Internal Pullup DC
Resistance

I/O VCC_ Source Current During
Low-to-High Transition

I/O VCC_ Sink Current During
High-to-Low Transition

I/O VCC_ Low-to-High Transition
Threshold

I/O VCC_ Output-Voltage Low V

V

V

R

I

IHCC

I

ILCC

V

CC-TH

IHC

ILC

CC

OLC

I/O VCC_ Tri-State Output
Leakage Current

EN Input-Voltage High Threshold V

EN Input-Voltage Low Threshold V

IHE

ILE

EN Pin Input Leakage Current TA = +25°C -1 +1 µA

ESD PROTECTION

I/O VCC_ ESD Protection C

V

= +3.3V, VL = +1.8V

CC

I/O VL_ sink current = 5mA, V

I/O VL_ sink current = 10mA, V

0.2 x V

L

EN = GND, T

= +25°C -1 +1 µA

A

(Note 2)

(Note 2)

EN = VCC or V

V

= +1.65V 15 mA

CC

V

= +1.65V 10 mA

CC

V

= +3.3V, VL = +1.8V

CC

L

I/O VCC_ sink current = 5mA, V

I/O VCC_ sink current = 10mA, V
or 0.2 x V

EN = GND, T

L

= +25°C -1 +1 µA

A

= 1µF, Human Body Model ±15 kV

VCC

0.3 x
V

= 0V 0.25

ILC

≤ 0.4V or

ILC

0.5 x

L

V

L

0.3 x

V

CC

51020kΩ

0.3 x

V

= 0V 0.25

ILL

≤ 0.4V

ILL

CC

0.5 x
V

CC

0.3 x
V

L

V

ILC

0.4V

0.7 x
V

V

ILL

0.4V

0.7 x

V

+

CC

+

L

V

V

V

V

V

V

V

V

MAX3394E/MAX3395E/MAX3396E

±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/
Octal-Level Translators with Speed-Up Circuitry

4 _______________________________________________________________________________________

TIMING CHARACTERISTICS

(VCC= +1.65V to +5.5V, VL= +1.2V to VCC; C

IOVL

≤ 15pF, C

IOVCC

≤ 15pF; TA= -40°C to +85°C, unless otherwise noted. Typical val-

ues are at T

A

= +25°C.) (Note 1)

Note 1: All units are 100% production tested at TA= +25°C. Limits over the operating temperature range are guaranteed by design

and not production tested.

Note 2: During a low-to-high transition, the threshold at which the I/O changes state is the lower of V

ILL

and V

ILC

since the two sides

are internally connected by an internal switch while the device is in the logic-low state.

I/O VCC_ Rise Time t

I/O VCC_ Fall Time t

I/O VL_ Rise Time t

I/O VL_ Fall Time t

Propagation Delay

Propagation Delay After EN t

Channel-to-Channel Skew t

Maximum Data Rate

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

RVCC

FVCC

RVL

FVL

t

I/OVL-VCC

t

I/OVCC-VL

EN

SKEW

Push-pull driver, Figure 1 50

Open-drain driver, internal pullup, Figure 2 500

Push-pull driver, Figure 1 50

Open-drain driver, internal pullup, Figure 2 50

Push-pull driver, Figure 3 50

Open-drain driver, internal pullup, Figure 4 500

Push-pull driver, Figure 3 50

Open-drain driver, internal pullup, Figure 4 50

Push-pull driver, Figure 1 50

Open-drain driver, internal pullup, Figure 2 600

Push-pull driver, Figure 3 50

Open-drain driver, internal pullup, Figure 4 600

Push-pull or open-drain driver, Figure 5 5 µs

Push-pull driver 5

Open-drain driver, internal pullup 100

Push-pull driver, Figures 1, 3 6

Open-drain driver, internal pullup,
Figures 2, 4

1

ns

ns

ns

ns

ns

ns

Mbps

MAX3394E/MAX3395E/MAX3396E

±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/

Octal-Level Translators with Speed-Up Circuitry

_______________________________________________________________________________________

5

Typical Operating Characteristics

(VCC= +2.5V, VL= +1.8V, CL= 15pF, TA= +25°C, unless otherwise noted.)

VCC SUPPLY CURRENT

vs. SUPPLY VOLTAGE

MAX3394E–96E toc01

VCC SUPPLY VOLTAGE (V)

V

CC

SUPPLY CURRENT (mA)

5.04.54.03.53.02.52.0

0.5

1.0

1.5

2.0

2.5

3.0

0

1.5 5.5

VL = +1.2V
DRIVING I/O V

L_

1Mbps OPEN-DRAIN

6Mbps PUSH-PULL

VL SUPPLY CURRENT
vs. SUPPLY VOLTAGE

MAX3394E–96E toc02

VL SUPPLY VOLTAGE (V)

V

L

SUPPLY CURRENT (mA)

4.54.03.53.02.52.0

0.5

1.0

1.5

2.0

2.5

3.0

0

1.5 5.0

VCC = +5.0V
DRIVING I/O V

L_

1Mbps OPEN-DRAIN

6Mbps PUSH-PULL

VCC SUPPLY CURRENT

vs. TEMPERATURE

MAX3394E–96E toc03

TEMPERATURE (°C)

V

CC

SUPPLY CURRENT (mA)

603510-15

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0

-40 85

DRIVING I/O V

L_

1Mbps OPEN-DRAIN

6Mbps PUSH-PULL

VL SUPPLY CURRENT

vs. TEMPERATURE

MAX3394E–96E toc04

TEMPERATURE (°C)

V

L

SUPPLY CURRENT (mA)

603510-15

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0

-40 85

DRIVING I/O V

L_

1Mbps OPEN-DRAIN

6Mbps PUSH-PULL

0

1.5

1.0

0.5

2.0

2.5

3.0

0403010 20 50 60 70 80 90 100

MAX3394E-96E toc05

LOAD CAPACITANCE (pF)

V

CC

SUPPLY CURRENT (mA)

VCC SUPPLY CURRENT

vs. LOAD CAPACITANCE

DRIVING I/O V

L_

6Mbps PUSH-PULL

1Mbps OPEN-DRAIN

0

0.2

0.1

0.4

0.3

0.6

0.5

0.7

0.9

0.8

1.0

020304010 50 60 70 9080 100

MAX3394E-96E toc06

LOAD CAPACITANCE (pF)

V

L

SUPPLY CURRENT (mA)

VL SUPPLY CURRENT

vs. LOAD CAPACITANCE

DRIVING I/O V

L_

6Mbps PUSH-PULL

1Mbps OPEN-DRAIN

0

100

50

200

150

300

250

350

450

400

500

020304010 50 60 70 9080 100

MAX3394E-96E toc07

CAPACITIVE LOAD (pF)

RISE TIME (ns)

OPEN-DRAIN RISE TIME
vs. LOAD CAPACITANCE

DRIVING I/O V

L_

DRIVING I/O V

CC_

OPEN-DRAIN FALL TIME
vs. LOAD CAPACITANCE

MAX3394E–96E toc08

LOAD CAPACITANCE (pF)

FALL TIME (ns)

908070605040302010

5

10

15

20

25

30

0

0 100

DRIVING I/O V

CC_

DRIVING I/O V

L_

PUSH-PULL RISE TIME

vs. LOAD CAPACITANCE

MAX3394E–96E toc09

LOAD CAPACITANCE (pF)

RISE TIME (ns)

908070605040302010

5

10

15

20

25

30

0

0 100

DRIVING I/O V

CC_

DRIVING I/O V

L_

MAX3394E/MAX3395E/MAX3396E

±15kV ESD-Protected, High-Drive Current, Dual-/Quad-/
Octal-Level Translators with Speed-Up Circuitry

6 _______________________________________________________________________________________

Typical Operating Characteristics (continued)

(VCC= +2.5V, VL= +1.8V, CL= 15pF, TA= +25°C, unless otherwise noted.)

0

4

2

8

6

12

10

14

04020 60 8010 5030 70 90 100

MAX3394E-96E toc10

LOAD CAPACITANCE (pF)

FALL TIME (ns)

PUSH-PULL FALL TIME

vs. LOAD CAPACITANCE

DRIVING I/O V

L_

DRIVING I/O V

CC_

0

15

10

5

20

25

30

0403010 20 50 60 70 80 90 100

PROPAGATION DELAY

vs. LOAD CAPACITANCE

MAX3394E-96E toc11

LOAD CAPACITANCE (pF)

PROPAGATIN DELAY (ns)

DRIVING I/O V

L_

OPEN-DRAIN

t

PDHL

t

PDLH

0

4

2

8

6

12

10

14

18

16

20

020304010 50 60 70 9080 100

MAX3394E-96E toc12

LOAD CAPACITANCE (pF)

PROPAGATION DELAY (ns)

DRIVING I/O V

CC_

OPEN-DRAIN

PROPAGATION DELAY

vs. LOAD CAPACITANCE

t

PDHL

t

PDLH

PROPAGATION DELAY

vs. LOAD CAPACITANCE

MAX3394E–96E toc13

LOAD CAPACITANCE (pF)

PROPAGATION DELAY (ns)

908060 7020 30 40 5010

5

10

15

20

25

30

35

40

45

50

0

0 100

t

PDHL

DRIVING I/O V

L_

PUSH-PULL

t

PDLH

0

4

2

8

6

12

10

14

18

16

20

020304010 50 60 70 9080 100

MAX3394E-96E toc14

LOAD CAPACITANCE (pF)

PROPAGATION DELAY (ns)

DRIVING I/O V

CC_

PUSH-PULL

SEE FIGURE 3

PROPAGATION DELAY

vs. LOAD CAPACITANCE

t

PDHL

40ns/div

(DRIVING I/O VL_, VCC = +2.5V, VL = +1.8V,

C

L

= 15pF, DATA RATE = 6Mbps)

I/O V

CC_

1V/div

I/O V

L_

1V/div

MAX3394E-96E toc15

200ns/div

(DRIVING I/O VL_, V

CC

= +5.0V, VL = +3.3V,

C

L

= 100pF, DATA RATE = 1Mbps)

MAX3394E-96E toc16

I/O V

CC_

2V/div

I/O V

L_

2V/div

200ns/div

(DRIVING I/O VL_, V

CC

= +5.0V, VL = +3.3V,

C

L

= 400pF, EXTERNAL 4.7kΩ

PULLUPS, DATA RATE = 1Mbps)

MAX3394E-96E toc17

I/O V

CC_

2V/div

I/O V

L_

2V/div