The MAX3372E–MAX3379E and MAX3390E–MAX3393E
±15kV ESD-protected level translators provide the level
shifting necessary to allow data transfer in a multivoltage
system. Externally applied voltages, VCCand VL, set the
logic levels on either side of the device. A low-voltage
logic signal present on the VLside of the device appears
as a high-voltage logic signal on the VCCside of the
device, and vice-versa. The MAX3374E/MAX3375E/
MAX3376E/MAX3379E and MAX3390E–MAX3393E unidirectional level translators level shift data in one direction
(VL→ VCCor VCC→ VL) on any single data line. The
MAX3372E/MAX3373E and MAX3377E/MAX3378E bidirectional level translators utilize a transmission-gatebased design (Figure 2) to allow data translation in either
direction (VL↔ VCC) on any single data line. The
MAX3372E–MAX3379E and MAX3390E–MAX3393E
accept VLfrom +1.2V to +5.5V and VCCfrom +1.65V to
+5.5V, making them ideal for data transfer between lowvoltage ASICs/PLDs and higher voltage systems.
All devices in the MAX3372E–MAX3379E, MAX3390E–
MAX3393E family feature a three-state output mode that
reduces supply current to less than 1µA, thermal shortcircuit protection, and ±15kV ESD protection on the V
CC
side for greater protection in applications that route signals externally. The MAX3372E/MAX3377E operate at a
guaranteed data rate of 230kbps. Slew-rate limiting
reduces EMI emissions in all 230kbps devices. The
MAX3373E–MAX3376E/MAX3378E/MAX3379E and
MAX3390E–MAX3393E operate at a guaranteed data rate
of 8Mbps over the entire specified operating voltage
range. Within specific voltage domains, higher data rates
are possible. (See Timing Characteristics.)
The MAX3372E–MAX3376E are dual level shifters
available in 3 x 3 UCSP™ and 8-pin SOT23-8 packages. The MAX3377E/MAX3378E/MAX3379E and
MAX3390E–MAX3393E are quad level shifters available in 3 x 4 UCSP and 14-pin TSSOP packages.
________________________Applications
SPI™, MICROWIRE™, and I2C™ Level
Translation
Low-Voltage ASIC Level Translation
Smart Card Readers
Cell-Phone Cradles
Portable POS Systems
Portable Communication Devices
Low-Cost Serial Interfaces
Cell Phones
GPS
Telecommunications Equipment
(VCC= +1.65V to +5.5V, VL= +1.2V to (VCC+ 0.3V), GND = 0, I/O VL_and I/O V
CC_
unconnected, TA= T
MIN
to T
MAX
, unless other-
wise noted. Typical values are at V
CC
= +3.3V, VL= +1.8V, TA= +25°C.) (Notes 1, 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
All Voltages Referenced to GND
V
CC
...........................................................................-0.3V to +6V
I/O V
CC_
......................................................-0.3V to (VCC+ 0.3V)
I/O V
L_
...........................................................-0.3V to (VL+ 0.3V)
THREE-STATE...............................................-0.3V to (V
L
+ 0.3V)
Short-Circuit Duration I/O V
L
, I/O VCCto GND...........Continuous
Short-Circuit Duration I/O V
L
or I/O VCCto GND
Driven from 40mA Source
(except MAX3372E and MAX3377E) .....................Continuous
(RL= 1MΩ, TA = +25°C, unless otherwise noted. All 230kbps TOCs apply to MAX3372E/MAX3377E only. All 8Mbps and 500kbps
TOCs apply to MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E only.)
(RL= 1MΩ, TA = +25°C, unless otherwise noted. All 230kbps TOCs apply to MAX3372E/MAX3377E only. All 8Mbps and 500kbps
TOCs apply to MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E only.)
PROPAGATION DELAY vs. CAPACITIVE LOAD
(DRIVING I/O V
700
600
500
400
300
200
PROPAGATION DELAY (ns)
100
0
20100
, VCC = +3.3V, VL = +1.8V)
L
t
PHL
t
PLH
DATA RATE = 230kbps
CAPACITIVE LOAD (pF)
RISE/FALL TIME vs. CAPACITIVE LOAD
, V
(DRIVING I/O V
2500
2000
t
1500
1000
RISE/FALL TIME (ns)
500
LH
0
20100
= +2.5V, VL = +1.8V)
L
CC
DATA RATE = 230kbps
t
HL
CAPACITIVE LOAD (pF)
MAX3372E toc10
90807060504030
MAX3372E toc13
90807060504030
PROPAGATION DELAY vs. CAPACITIVE LOAD
, V
(DRIVING I/O V
15
DATA RATE = 8Mbps
12
9
6
PROPAGATION DELAY (ns)
3
0
1050
= +3.3V, VL = +1.8V)
L
CC
t
PHL
t
PLH
CAPACITIVE LOAD (pF)
RISE/FALL TIME vs. CAPACITIVE LOAD
(DRIVING I/O V
14
DATA RATE = 8Mbps
12
10
8
6
RISE/FALL TIME (ns)
4
2
0
1050
, VCC = +2.5V, VL = +1.8V)
L
t
LH
t
HL
CAPACITIVE LOAD (pF)
PROPAGATION DELAY vs. CAPACITIVE LOAD
, V
(DRIVING I/O V
300
t
PLH
250
MAX3372E toc11
200
150
100
PROPAGATION DELAY (ns)
50
45403530252015
t
PHL
0
1050
= +3.3V, VL = +1.8V)
L
CC
DATA RATE = 500kbps,
OPEN-DRAIN
CAPACITIVE LOAD (pF)
45403530252015
RISE/FALL TIME vs. CAPACITIVE LOAD
, V
(DRIVING I/O V
300
t
LH
250
MAX3372E toc14
200
150
100
RISE/FALL TIME (ns)
t
50
45403530252015
HL
0
1050
CAPACITIVE LOAD (pF)
= +2.5V, VL = +1.8V)
CC
CC
DATA RATE = 500kbps,
OPEN-DRAIN
45403530252015
MAX3372E toc12
MAX3372E toc15
RISE/FALL TIME vs. CAPACITIVE LOAD
, V
(DRIVING I/O V
2500
DATA RATE = 230kbps
2000
t
1500
1000
RISE/FALL TIME (ns)
500
HL
0
20100
CAPACITIVE LOAD (pF)
= +3.3V, VL = +1.8V)
CC
CC
t
LH
RISE/FALL TIME vs. CAPACITIVE LOAD
, V
(DRIVING I/O V
12
DATA RATE = 8Mbps
10
MAX3372E toc16
8
t
LH
6
4
RISE/FALL TIME (ns)
2
0
90807060504030
1050
CAPACITIVE LOAD (pF)
= +3.3V, VL = +1.8V)
CC
CC
t
HL
MAX3372E toc17
45403530252015
RISE/FALL TIME vs. CAPACITIVE LOAD
, V
(DRIVING I/O V
300
250
t
LH
200
150
100
RISE/FALL TIME (ns)
t
50
HL
0
1050
CAPACITIVE LOAD (pF)
= +3.3V, VL = +1.8V)
CC
CC
DATA RATE = 500kbps,
OPEN-DRAIN
MAX3372E toc18
45403530252015
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
(RL= 1MΩ, TA = +25°C, unless otherwise noted. All 230kbps TOCs apply to MAX3372E/MAX3377E only. All 8Mbps and 500kbps
TOCs apply to MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E only.)
(RL= 1MΩ, TA = +25°C, unless otherwise noted. All 230kbps TOCs apply to MAX3372E/MAX3377E only. All 8Mbps and 500kbps
TOCs apply to MAX3373E–MAX3376E/MAX3378E/MAX3379E and MAX3390E–MAX3393E only.)
EXITING THREE-STATE OUTPUT MODE
(V
CC
= +3.3V, VL = +1.8V, CL = 50pF)
MAX3372E toc28
I/O V
L_
I/O V
CC_
2µs/div
THREE-STATE
2V/div
1V/div
1V/div
Pin Description
Note 6: For unidirectional devices (MAX3374E/MAX3375E/MAX3376E/MAX3379E and MAX3390E–MAX3393E) see Pin
Configurations for input/output configurations.
OPEN-DRAIN DRIVING
(DRIVING I/O V
L
, VCC = +3.3V, VL = +1.8V,
C
L
= 15pF, DATA RATE = 500kbps)
MAX3372E toc27
I/O V
L_
I/O V
CC_
1V/div
2V/div
200ns/div
3 x 4
UCSP
TSSOPSOT23-8
A125C2I/O VL1Input/Output 1. Referenced to VL. (Note 6)
A234C3I/O VL2Input/Output 2. Referenced to VL. (Note 6)
A34——I/O VL3Input/Output 3. Referenced to VL. (Note 6)
A45——I/O VL4Input/Output 4. Referenced to VL. (Note 6)
B1147A1V
B213C1V
B386B1
B472B3GNDGround
C1138A2I/O VCC1Input/Output 1. Referenced to VCC. (Note 6)
C2121A3I/O VCC2Input/Output 2. Referenced to VCC. (Note 6)
C311——I/O VCC3Input/Output 3. Referenced to VCC. (Note 6)
C410——I/O VCC4Input/Output 4. Referenced to VCC. (Note 6)
—6, 9—B2N.C.No Connection. Not internally connected.
PIN
3 x 3
UCSP
NAMEFUNCTION
CC
L
VCC Input Voltage +1.65V ≤ VCC ≤ +5.5V.
Logic Input Voltage +1.2V ≤ VL ≤ (VCC + 0.3V)
Thr ee- S tate Outp ut M od e E nab l e. P ul l THREE-STATE l ow
THREE-
STATE
to p l ace d evi ce i n thr ee- state outp ut m od e. I/O V
I/O V L_ ar e hi g h i m p ed ance i n thr ee- state outp ut m od e.
N OTE : Log i c r efer enced to V L ( for l og i c thr eshol d s see
E l ectr i cal C har acter i sti cs) .
C C _
and
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
The MAX3372E–MAX3379E and MAX3390E–MAX3393E
ESD-protected level translators provide the level shifting
necessary to allow data transfer in a multivoltage system.
Externally applied voltages, VCCand VL, set the logic levels on either side of the device. A low-voltage logic signal
present on the VLside of the device appears as a highvoltage logic signal on the VCCside of the device, and
vice-versa. The MAX3374E/MAX3375E/MAX3376E/
MAX3379E and MAX3390E–MAX3393E unidirectional
level translators level shift data in one direction (VL→
VCCor VCC→ VL) on any single data line. The
MAX3372E/MAX3373E and MAX3377E/MAX3378E bidirectional level translators utilize a transmission-gatebased design (see Figure 2) to allow data translation in
either direction (VL↔ VCC) on any single data line. The
MAX3372E–MAX3379E and MAX3390E–MAX3393E
accept VLfrom +1.2V to +5.5V and VCCfrom +1.65V to
+5.5V, making them ideal for data transfer between lowvoltage ASICs/PLDs and higher voltage systems.
All devices in the MAX3372E–MAX3379E, MAX3390E–
MAX3393E family feature a three-state output mode that
reduces supply current to less than 1µA, thermal shortcircuit protection, and ±15kV ESD protection on the V
CC
side for greater protection in applications that route signals externally. The MAX3372E/MAX3377E operate at a
guaranteed data rate of 230kbps. Slew-rate limiting
reduces EMI emissions in all 230kbps devices. The
MAX3373E–MAX3376E/MAX3378E/MAX3379E and
MAX3390E–MAX3393E operate at a guaranteed data rate
of 8Mbps over the entire specified operating voltage
range. Within specific voltage domains, higher data rates
are possible. (See Timing Characteristics.)
Level Translation
For proper operation ensure that +1.65V ≤ VCC≤ +5.5V,
+1.2V ≤ VL≤ +5.5V, and VL≤ (VCC+ 0.3V). During
power-up sequencing, VL≥ (VCC+ 0.3V) will not damage
the device. During power-supply sequencing, when V
CC
is floating and VLis powering up, a current may be
sourced, yet the device will not latch up. The speed-up
Figure 1a. Rail-to-Rail Driving I/O V
L
Figure 1b. Rail-to-Rail Driving I/O V
CC
Rail-to-Rail is a registered trademark of Nippon Motorola, Ltd.
circuitry limits the maximum data rate for devices in the
MAX3372E–MAX3379E, MAX3390E–MAX3393E family to
16Mbps. The maximum data rate also depends heavily
on the load capacitance (see Typical OperatingCharacteristics), output impedance of the driver, and the
operational voltage range (see Timing Characteristics).
Speed-Up Circuitry
The MAX3373E–MAX3376E/MAX3378E/MAX3379E and
MAX3390E–MAX3393E feature a one-shot generator that
decreases the rise time of the output. When triggered,
MOSFETs PU1 and PU2 turn on for a short time to pull up
I/O VL_and I/O V
CC_
to their respective supplies (see
Figure 2b). This greatly reduces the rise time and propagation delay for the low-to-high transition. The scope
photo of Rail-to-Rail Driving for 8Mbps Operation in the
Typical Operating Characteristics shows the speed-up
circuitry in operation.
Three-State Output Mode
Pull THREE-STATE low to place the MAX3372E–
MAX3379E and MAX3390E–MAX3393E in three-state out-
put mode. Connect THREE-STATE to V
L
(logic high) for
normal operation. Activating the three-state output mode
disconnects the internal 10kΩ pullup resistors on the I/O
VCCand I/O VLlines. This forces the I/O lines to a highimpedance state, and decreases the supply current to
less than 1µA. The high-impedance I/O lines in threestate output mode allow for use in a multidrop network.
When in three-state output mode, do not allow the voltage
at I/O VL_to exceed (VL+ 0.3V), or the voltage at I/O
V
CC_
to exceed (VCC+ 0.3V).
Thermal Short-Circuit Protection
Thermal overload detection protects the MAX3372E–
MAX3379E and MAX3390E–MAX3393E from short-circuit
fault conditions. In the event of a short-circuit fault, when
the junction temperature (TJ) reaches +152°C, a thermal
sensor signals the three-state output mode logic to force
the device into three-state output mode. When TJhas
cooled to +142°C, normal operation resumes.
Figure 1c. Open-Drain Driving I/O V
CC
Figure 1d. Open-Drain Driving I/O V
L
V
L
V
V
CC
L
V
CC
V
L
V
V
CC
L
V
CC
MAX3372E–MAX3379E
AND MAX3390E–MAX3393E
I/O V
L_
GND
I/O V
L_
t
PD-VCC-LH
I/O V
CC_
t
RVCC
I/O V
CC_
t
PD-VCC-HL
DATA
t
FVCC
R
LOAD
MAX3373E–MAX3376E,
MAX3378E/MAX3379E
AND MAX3390E–MAX3393E
DATA
I/O V
C
C
LOAD
LOAD
I/O V
I/O V
CC_
L_
R
LOAD
t
PD-VL-LH
t
RVL
L_
GND
I/O V
CC_
t
PD-VL-HL
t
FVL
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
As with all Maxim devices, ESD-protection structures are
incorporated on all pins to protect against electrostatic
discharges encountered during handling and assembly.
The I/O VCClines have extra protection against static
electricity. Maxim’s engineers have developed state-ofthe-art structures to protect these pins against ESD of
±15kV without damage. The ESD structures withstand
high ESD in all states: normal operation, three-state output mode, and powered down. After an ESD event,
Maxim’s E versions keep working without latchup,
whereas competing products can latch and must be
powered down to remove latchup.
ESD protection can be tested in various ways. The I/O
VCClines of this product family are characterized for
protection to the following limits:
1) ±15kV using the Human Body Model
2) ±8kV using the Contact Discharge method specified
in IEC 1000-4-2
3) ±10kV using IEC 1000-4-2’s Air-Gap Discharge
method
ESD Test Conditions
ESD performance depends on a variety of conditions.
Contact Maxim for a reliability report that documents
test setup, test methodology, and test results.
Human Body Model
Figure 3a shows the Human Body Model and Figure 3b
shows the current waveform it generates when discharged into a low impedance. This model consists of
a 100pF capacitor charged to the ESD voltage of interest, which is then discharged into the test device
through a 1.5kΩ resistor.
IEC 1000-4-2
The IEC 1000-4-2 standard covers ESD testing and
performance of finished equipment; it does not specifically refer to integrated circuits. The MAX3372E–
MAX3379E and MAX3390E–MAX3393E help to design
equipment that meets Level 3 of IEC 1000-4-2, without
the need for additional ESD-protection components.
The major difference between tests done using the
Human Body Model and IEC 1000-4-2 is higher peak current in IEC 1000-4-2, because series resistance is lower
in the IEC 1000-4-2 model. Hence, the ESD withstand
voltage measured to IEC 1000-4-2 is generally lower than
that measured using the Human Body Model. Figure 4a
shows the IEC 1000-4-2 model, and Figure 4b shows the
current waveform for the ±8kV, IEC 1000-4-2, Level 4,
ESD contact-discharge test.
The air-gap test involves approaching the device with a
charged probe. The contact-discharge method connects
the probe to the device before the probe is energized.
Machine Model
The Machine Model for ESD tests all pins using a
200pF storage capacitor and zero discharge resistance. Its objective is to emulate the stress caused by
contact that occurs with handling and assembly during
manufacturing. Of course, all pins require this protection during manufacturing, not just inputs and outputs.
Therefore, after PC board assembly, the Machine
Model is less relevant to I/O ports.
Figure 3a. Human Body ESD Test Model
Figure 3b. Human Body Current Waveform
1MΩRD 1500Ω
R
C
CHARGE-CURRENT-
LIMIT RESISTOR
HIGH-
VOLTAGE
DC
SOURCE
C
100pF
DISCHARGE
RESISTANCE
STORAGE
s
CAPACITOR
DEVICE
UNDER
TEST
IP 100%
90%
AMPERES
36.8%
10%
0
0
t
RL
I
r
TIME
t
DL
CURRENT WAVEFORM
PEAK-TO-PEAK RINGING
(NOT DRAWN TO SCALE)
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
To reduce ripple and the chance of transmitting incorrect data, bypass VLand VCCto ground with a 0.1µF
capacitor. See Typical Operating Circuit. To ensure full
±15kV ESD protection, bypass VCCto ground with a
1µF capacitor. Place all capacitors as close to the
power-supply inputs as possible.
I2C Level Translation
The MAX3373E–MAX3376E, MAX3378E/MAX3379E
and MAX3390E–MAX3393E level-shift the data present
on the I/O lines between +1.2V and +5.5V, making
them ideal for level translation between a low-voltage
ASIC and an I
2
C device. A typical application involves
interfacing a low-voltage microprocessor to a 3V or 5V
D/A converter, such as the MAX517.
Push-Pull vs. Open-Drain Driving
All devices in the MAX3372E–MAX3379E and
MAX3390E–MAX3393E family may be driven in a pushpull configuration. The MAX3373E–MAX3376E/
MAX3378E/MAX3379E and MAX3390E–MAX3393E
include internal 10kΩ resistors that pull up I/O VL_and
I/O V
CC_
to their respective power supplies, allowing
operation of the I/O lines with open-drain devices. See
Timing Characteristics for maximum data rates when
using open-drain drivers.
Figure 4b. IEC 1000-4-2 ESD Generator Current Waveform
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information
go to www.maxim-ic.com/packages
.)
C
PIN 1
I.D. DOT
(SEE NOTE 6)
A
SEE DETAIL "A"
b
C
L
L
e1
D
C
L
A2
e
C
E
A1
L
C
SEATING PLANE C
E1
SYMBOL
A
C
L
L2
e
e1
0
L
L2
MIN
0.90
0.00A1
0.90A2
0.28b
0.09
2.80D
1.50E1
0.30
0.25 BSC.
0.65 BSC.
1.95 REF.
0
0
MAX
1.45
0.15
1.30
0.45
0.20
3.00
3.002.60E
1.75
0.60
8
GAUGE PLANE
NOTE:
1. ALL DIMENSIONS ARE IN MILLIMETERS.
2. FOOT LENGTH MEASURED FROM LEAD TIP TO UPPER RADIUS OF
HEEL OF THE LEAD PARALLEL TO SEATING PLANE C.
3. PACKAGE OUTLINE EXCLUSIVE OF MOLD FLASH & METAL BURR.
4. PACKAGE OUTLINE INCLUSIVE OF SOLDER PLATING.
5. COPLANARITY 4 MILS. MAX.
6. PIN 1 I.D. DOT IS 0.3 MM MIN. LOCATED ABOVE PIN 1.
7. SOLDER THICKNESS MEASURED AT FLAT SECTION OF LEAD
BETWEEN 0.08mm AND 0.15mm FROM LEAD TIP.
8. MEETS JEDEC MO178.
PROPRIETARY INFORMATION
TITLE:
DETAIL "A"
PACKAGE OUTLINE, SOT-23, 8L BODY
REV.DOCUMENT CONTROL NO.APPROVAL
21-0078
SOT23, 8L .EPS
1
D
1
MAX3372E–MAX3379E/MAX3390E–MAX3393E
±15kV ESD-Protected, 1µA, 16Mbps, Dual/Quad
Low-Voltage Level Translators in UCSP
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 25
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information
go to www.maxim-ic.com/packages
.)
TSSOP4.40mm.EPS
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