MAXIM MAX2666, MAX2668 Technical data

19-5479; Rev 0; 8/10

EVALUATION KIT

AVAILABLE

Tiny Low-Noise Amplifiers for HSPA/LTE

General Description

The MAX2666/MAX2668 are a family of low-noise ampli­fiers (LNAs) intended for use in HSPA mobile handsets.
The LNAs provide three programmable gain states,
delivering superior optimization for linearity and sensitiv­ity versus traditional two-gain-state LNAs.

The MAX2666 is optimized for use over the 2100MHz
to 2200MHz frequency range (bands 1, 4, and 10) and
offers a typical maximum gain of 14.5dB.

The MAX2668 is optimized for use over the 850MHz to
1000MHz frequency range (bands 5, 6, and 8) and pro­vides a typical maximum gain of 17dB.

Each device is available in a tiny 1mm x 1.5mm, 6-pin
ultra-thin LGA package.

MAX2666/MAX2668

Features

S Small Footprint: 1mm x 1.5mm Package

S Thin Profile: 0.55mm

S Low Noise Figure

1dB for MAX2668

1.1dB for MAX2666

S Three Gain States for Optimum Blocker Handling

S 3.8mA Low Supply Current

S Low Bill of Materials

Ordering Information

Applications

HSPA/LTE Front-End Modules

HSPA/LTE Preamplification

PART TEMP RANGE PIN-PACKAGE

MAX2666EYT+
MAX2668EYT+

+Denotes a lead(Pb)-free/RoHS-compliant package.

-40NC to +85NC

-40NC to +85NC

6 Ultra-Thin LGA
6 Ultra-Thin LGA

Typical Operating Circuit

GAIN CONTROL TABLE FOR TWO GAIN STEPS

GAIN1

0 — LOW

1 — HIGH

GAIN CONTROL TABLE FOR THREE GAIN STEPS

GAIN1

0 OFF

0 LOW

1 MID

1 HIGH

GAIN0 GAIN

GAIN0 GAIN

0

1

0

1

LNA_IN

MAX2666
MAX2668

1

2

CHOKE +

MATCHING

3

6

5

4

V

CC

GAIN1

GAIN0

LNA_OUT

_______________________________________________________________ Maxim Integrated Products 1

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.

Tiny Low-Noise Amplifiers for HSPA/LTE

ABSOLUTE MAXIMUM RATINGS

VCC to GND ..........................................................-0.3V to +3.6V

Other Pins to GND ................................... -0.3V to (VCC + 0.3V)

Maximum Input Power ................................................... +10dBm

Continuous Power Dissipation (TA = +70NC)

Ultra-Thin LGA (derate 2.1mW/NC above +70NC) ....... 167mW

CAUTION! ESD SENSITIVE DEVICE

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.

DC ELECTRICAL CHARACTERISTICS

(Typical Operating Circuit, MAX2666/MAX2668 Evaluation Kit, GAIN1 = High, GAIN0 = High-Z, VCC = 2.7V to 3.3V, no RF signal
applied, TA = -40NC to +85NC. Typical values are at VCC = 2.85V, TA = +25NC, unless otherwise noted.) (Note 1)

MAX2666/MAX2668

Supply Voltage 2.7 2.85 3.3 V
Supply Current, High Gain GAIN_ = 11 3.8 mA
Supply Current, Mid Gain GAIN_ = 10 3.8 mA
Supply Current, Low Gain GAIN_ = 01 100 FA
Shutdown Current GAIN_ = 00 100 FA
Logic-High (VIH) 1.2 V
Logic-Low (VIL) 0.5 V

PARAMETER CONDITIONS MIN TYP MAX UNITS

Operating Temperature Range .......................... -40NC to +85NC

Junction Temperature .....................................................+150NC

Storage Temperature Range ............................ -65NC to +160NC

Lead Temperature (soldering, 10s) ................................+260NC

Soldering Temperature (reflow) ......................................+260NC

AC ELECTRICAL CHARACTERISTICS

(MAX2666/MAX2668 Evaluation Kit, input matching network according to Table 1 (input matching network), GAIN1 = High, GAIN0 =
High-Z, VCC = 2.85V, TA = +25NC, unless otherwise noted.)

PARAMETER CONDITIONS MIN TYP MAX UNITS

MAX2666

Frequency Range Bands 1, 4, 10 2110 2140 2170 MHz

HG mode 10 14.5 17.5

Gain

LG mode, GAIN_ = 01 -15.5 -12 -9
HG mode 1.1

Noise Figure

LG mode, GAIN_ = 01 12
HG mode -2

Input 3rd-Order Intercept (Note 2)

LG mode, GAIN_ = 01 > 20

Phase Shift with Gain Step 15 Degrees

2 ______________________________________________________________________________________

dBMG mode, GAIN_ = 10 0 5 8.5

dBMG mode, GAIN_ = 10 3

dBmMG mode, GAIN_ = 10 4

Tiny Low-Noise Amplifiers for HSPA/LTE

AC ELECTRICAL CHARACTERISTICS (continued)

(MAX2666/MAX2668 Evaluation Kit, input matching network according to Table 1 (input matching network), GAIN1 = High, GAIN0 =
High-Z, VCC = 2.85V, TA = +25NC, unless otherwise noted.)

PARAMETER CONDITIONS MIN TYP MAX UNITS

MAX2668 (BAND 8)

Frequency Range Band 8 925 942 960 MHz

HG mode 13.5 17 21

Gain

LG mode, GAIN_ = 01 -19 -16 -13
HG mode 1

Noise Figure

LG mode, GAIN_ = 01 16
HG mode -4

Input 3rd-Order Intercept (Note 2)

LG mode, GAIN_ = 01 > 18

Phase Shift with Gain Step 15 Degrees

MAX2668 (BAND 5, BAND 6)

Frequency Range Bands 5 and 6 869 881.52 894 MHz

HG mode 13.5 17 21

Gain

LG mode, GAIN_ = 01 -19 -16 -13
HG mode 1

Noise Figure

LG mode, GAIN_ = 01 16
HG mode -5

Input 3rd-Order Intercept (Note 2)

LG mode, GAIN_ = 01 > 18

Phase Shift with Gain Step 15 Degrees

Note 1: Guaranteed by test at TA = +25NC; guaranteed by designed and characterization at TA = -40NC and TA = +85NC.
Note 2: -25dBm/tone at high gain, -15dBm/tone at mid gain, -15dBm/tone at low gain. Tone separation less than 5MHz.

dBMG mode, GAIN_ = 10 0 5 8

dBMG mode, GAIN_ = 10 5

dBmMG mode, GAIN_ = 10 2

dBMG mode, GAIN_ = 10 0 5 8

dBMG mode, GAIN_ = 10 5

dBmMG mode, GAIN_ = 10 2

MAX2666/MAX2668

_______________________________________________________________________________________ 3

Tiny Low-Noise Amplifiers for HSPA/LTE

Typical Operating Characteristics

(MAX2666/MAX2668 Evaluation Kit. Typical values are at VCC = 2.85V, TA = +25°C, unless otherwise noted.)

vs. FREQUENCY AND TEMPERATURE

MAX2666 GAIN

HIGH-GAIN MODE

16

TA = -40°C

15

GAIN (dB)

14

MAX2666/MAX2668

13

2110 2170

RF FREQUENCY (MHz)

TA = +25°C

TA = +85°C

21602150214021302120

MAX2666 toc01

GAIN (dB)

MAX2666 NOISE FIGURE

vs. FREQUENCY AND TEMPERATURE

HIGH-GAIN MODE

1.70

1.60

1.50

1.40

1.30

1.20

NF (dB)

1.10

1.00

0.90

0.80

0.70

TA = +85°C

TA = +25°C

TA = -40°C

216021502140213021202110 2170

RF FREQUENCY (MHz)

MAX2666 toc04

IIP3 (dBm)

MAX2666 S22

HIGH-GAIN MODE

0

-1

-2

-3

-4

-5

S22 (dB)

-6

-7

-8

-9

-10
1500 3500

FREQUENCY (MHz)

300025002000

MAX2666 toc07

S21 (dB)

vs. FREQUENCY AND TEMPERATURE

MAX2666 GAIN

MID-GAIN MODE

6.0

5.5

5.0

4.5

4.0

RF FREQUENCY (MHz)

TA = -40°C

TA = +25°C

TA = +85°C

216021502140213021202110 2170

MAX2666 IIP3 vs. SUPPLY

VOLTAGE AND TEMPERATURE

MID BAND 10; 5MHz TONE'S SEPARATION

24
22
20

LOW GAIN; TA = +85°C

18
16
14
12

MID GAIN; TA = +85°C

10

8
6
4

HIGH GAIN; TA = -40°C

2
0

-2

2.7 3.3

LOW GAIN; TA = -40°C

MID GAIN; TA = -40°C

HIGH GAIN; TA = +85°C

3.23.13.02.92.8

SUPPLY VOLTAGE (V)

MAX2666 S21

HIGH-GAIN MODE

20

15

10

5

0

-5

-10
1500 3500

FREQUENCY (MHz)

300025002000

MAX2666 toc02

MAX2666 toc05

MAX2666 toc08

vs. FREQUENCY AND TEMPERATURE

MAX2666 GAIN

LOW-GAIN MODE

-11.0

-11.5

-12.0

-12.5

GAIN (dB)

-13.0

-13.5

-14.0

TA = +25°C

RF FREQUENCY (MHz)

TA = -40°C

TA = +85°C

MAX2666 S11

HIGH-GAIN MODE

0

-1

-2

-3

-4

-5

S11 (dB)

-6

-7

-8

-9

-10
1500 3500

FREQUENCY (MHz)

300025002000

MAX2666 S12

HIGH-GAIN MODE

-20

-22

-24

-26

-28

-30

S12 (dB)

-32

-34

-36

-38

-40
1500 3500

FREQUENCY (MHz)

300025002000

MAX2666 toc03

216021502140213021202110 2170

MAX2666 toc06

MAX2666 toc09

4 ______________________________________________________________________________________

Tiny Low-Noise Amplifiers for HSPA/LTE

Typical Operating Characteristics (continued)

(MAX2666/MAX2668 Evaluation Kit. Typical values are at VCC = 2.85V, TA = +25°C, unless otherwise noted.)

MAX2666/MAX2668

vs. FREQUENCY AND TEMPERATURE

MAX2668 GAIN

HIGH-GAIN MODE

20

19

18

GAIN (dB)

17

16

15

860 870 880 890 900 910 920 930 940 950 960

TA = -40°C

TA = +25°C

TA = +85°C

RF FREQUENCY (MHz)

MAX2668 NOISE FIGURE

vs. FREQUENCY AND TEMPERATURE

HIGH-GAIN MODE

1.4

1.3

1.2

1.1

1.0

NF (dB)

0.9

0.8

0.7

0.6
860 960

RF FREQUENCY (MHz)

TA = +85°C

TA = +25°C

TA = -40°C

MAX2668 GAIN

LOW-GAIN MODE

TA = -40°C

TA = +25°C

TA = +85°C

RF FREQUENCY (MHz)

MAX2668 toc12

MAX2668 toc10

vs. FREQUENCY AND TEMPERATURE

MAX2668 GAIN

MID-GAIN MODE

7

TA = -40°C

6

TA = +25°C

GAIN (dB)

5

TA = +85°C

4

860 870 880 890 900 910 920 930 940 950 960

RF FREQUENCY (MHz)

MAX2668 toc11

vs. FREQUENCY AND TEMPERATURE

-14

-15

-16

GAIN (dB)

-17

-18
860 870 880 890 900 910 920 930 940 950 960

MAX2668 IIP3 vs. SUPPLY

VOLTAGE AND TEMPERATURE

MID BAND 8; 5MHz TONE'S SEPARATION

22
20
18

MAX2668 toc13

16
14

LOW GAIN; TA = +85°C

12
10

8

MID GAIN; TA = +85°C

IIP3 (dBm)

6
4
2
0

-2

HIGH GAIN; TA = -40°C

-4

950940870 880 890 910 920900 930

-6

LOW GAIN; TA = -40°C

MID GAIN; TA = -40°C

HIGH GAIN; TA = +85°C

3.23.13.02.92.82.7 3.3

SUPPLY VOLTAGE (V)

MAX2668 toc14

0

-2

-4

-6

-8

-10

S11 (dB)

-12

-14

-16

-18

-20
500 2500

MAX2668 S11

HIGH-GAIN MODE

MAX2668 toc15

200015001000

FREQUENCY (MHz)

0

-2

-4

-6

-8

-10

-12

S22 (dB)

-14

-16

-18

-20

-22

MAX2668 S22

HIGH-GAIN MODE

FREQUENCY (MHz)

200015001000500 2500

MAX2668 toc16

20

15

10

5

0

S21 (dB)

-5

-10

-15

-20

MAX2668 S21

HIGH-GAIN MODE

FREQUENCY (MHz)

200015001000500 2500

MAX2668 toc17

-20

-25

-30

-35

S12 (dB)

-40

-45

-50

MAX2668 S12

HIGH-GAIN MODE

200015001000500 2500

FREQUENCY (MHz)

_______________________________________________________________________________________ 5

MAX2668 toc18

Tiny Low-Noise Amplifiers for HSPA/LTE

Pin Configuration

TOP VIEW

V

CC

6 5 4

MAX2666
MAX2668

1 2 3

LNA_IN LNA_GNDBIAS_GND

ULTRA-THIN LGA

LNA_OUT/

GAIN0GAIN1

MAX2666/MAX2668

Pin Description

PIN NAME FUNCTION

1 LNA_IN RF Input. Match according to band in Table 1.
2 BIAS_GND DC and Bias Ground
3 LNA_GND RF Ground

4 LNA_OUT/GAIN0

5 GAIN1

6 V

CC

RF Output and Gain Control. Internally match to 50I. Couple gain logic with a 20kI
resistor. When DC is open-circuit, pin self-biases to logic-high.

Gain Control. Together with GAIN0, selects gain mode. Must be connected to
logic-high or logic-low.

Supply Voltage. Bypass with a 1000pF capacitor to ground.

6 ______________________________________________________________________________________

Tiny Low-Noise Amplifiers for HSPA/LTE

Detailed Description

The MAX2666/MAX2668 are low-power LNAs designed
for 3G mobile applications. The devices feature low
noise, high linearity, and three gain steps in a tiny plastic
package.

Input and Output Matching

The devices require one matching inductor at the input
port in series with a DC-blocking capacitor to achieve
optimal performance in NF, gain, IIP3, and phase shift.
Table 1 presents the recommended input-matching
network values. The output port is internally matched to
50I, eliminating the need for external matching com­ponents. At the output port, an external DC-blocking
capacitor should be used to isolate the control function
of the output pin.

DC Decoupling and Layout

A properly designed PCB is essential to any RF micro­wave circuit. Use controlled-impedance lines on all
high-frequency inputs and outputs. Bypass VCC with a
decoupling capacitor located close to the device.

For long VCC lines, it might be necessary to add decou­pling capacitors. Locate these additional capacitors
further away from the device package. Proper grounding

of the GND pins is essential. If the PCB uses a top-side

MAX2666/MAX2668

RF ground, connect it directly to the GND pins. For a
board where the ground is not on the component layer,
connect the GND pins to the board with multiple vias
close to the package.

Gain Control

The devices’ LNA_OUT/GAIN0 pin is also used as a
control pin for the LNA gain modes according to the gain
control table. GAIN0 logic level is set through an external
20kI resistor. An external DC-blocking capacitor should
be used to isolate the control function of this dual-pur­pose pin (see the Typical Operating Circuit). The GAIN1
pin must be set to either logic-high or logic-low.

Refer to www.maxim-ic.com for the MAX2666/MAX2668
Evaluation Kit schematic, Gerber data, PADS layout file,
and BOM information.

Table 1. Matching Component Values in
Different Bands

BAND SERIES C (nF) SERIES L (nH)

1, 4, 10 10 3.9

5, 6 10 12

8 10 12

Detailed Application Circuit in EV Kit

V

CC

RFIN

C1

0.01µF
10%

(0402)

C4

0.01µF
10%

(0201)

3.9nH

Q0.1nH (MAX2666)
Q0.2nH (MAX2668)

12nH

(0402)

L4

1

2

LNA_IN

BIAS_GND

U1

V

GAIN1

6

CC

5

MAX2666

OPEN

(0201)

C7

3

LNA_GND

MAX2668

LNA_OUT/GAIN0

4

_______________________________________________________________________________________ 7

R1

I

0

(0201)

R2

0

I

(0201)

C5
1000pF
10%
(0402)

GND

GAIN1 GAIN0

20k

(0201)

0.01µF

(0201)

R4

I

C3

10%

RFOUT

Tiny Low-Noise Amplifiers for HSPA/LTE

Chip Information

PROCESS: SiGe BiCMOS

MAX2666/MAX2668

Package Information

For the latest package outline information and land patterns,
go to www.maxim-ic.com/packages. Note that a “+”, “#”, or
“-” in the package code indicates RoHS status only. Package
drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.

PACKAGE

TYPE

6 Ultra-Thin

LGA

PACKAGE

CODE

Y61A1+2

OUTLINE

NO.

21-0190 90-0233

LAND

PATTERN NO.

8 ______________________________________________________________________________________

Tiny Low-Noise Amplifiers for HSPA/LTE

Revision History

MAX2666/MAX2668

REVISION

NUMBER

0 8/10 Initial release —

REVISION

DATE

DESCRIPTION

PAGES

CHANGED

Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied.
Maxim reserves the right to change the circuitry and specifications without notice at any time.

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