MAXIM MAX2620 Technical data

MAX2620
1
V
CC
1
TANK
FDBK
SHDN
2
3
4
8
OUT
V
CC
2
OUT
7
6
5
V
CC
V
CC
V
CC
V
CC
BIAS
SUPPLY
C17
1.5pF
C5
C6
1000pF
1000pF
1000pF
10
CERAMIC
RESONATOR
L1
V
TUNE
900MHz BAND OSCILLATOR
1k
D1
ALPHA
SMV1204-34
1.5pF 1.5pF
51
10nH
C3
2.7pF
C4 1pF
0.1µF
1000pF
OUT TO SYNTHESIZER
OUT TO MIXER
SHDN
MAX2620
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
________________________________________________________________ Maxim Integrated Products 1
19-1248; Rev 2; 2/02
EVALUATION KIT
AVAILABLE
_________________General Description
The MAX2620 combines a low-noise oscillator with two output buffers in a low-cost, plastic surface-mount, ultra-small µMAX package. This device integrates func­tions typically achieved with discrete components. The oscillator exhibits low-phase noise when properly mated with an external varactor-tuned resonant tank circuit. Two buffered outputs are provided for driving mixers or prescalers. The buffers provide load isolation to the oscillator and prevent frequency pulling due to load-impedance changes. Power consumption is typi­cally just 27mW in operating mode (VCC= 3.0V), and drops to less than 0.3µW in standby mode. The MAX2620 operates from a single +2.7V to +5.25V supply.
________________________Applications
Analog Cellular Phones
Digital Cellular Phones
900MHz Cordless Phones
900MHz ISM-Band Applications
Land Mobile Radio
Narrowband PCS (NPCS)
____________________________Features
Low-Phase-Noise Oscillator: -110dBc/Hz
(25kHz offset from carrier) Attainable
Operates from Single +2.7V to +5.25V SupplyLow-Cost Silicon Bipolar DesignTwo Output Buffers Provide Load IsolationInsensitive to Supply VariationsLow, 27mW Power Consumption (V
CC
= 3.0V)
Low-Current Shutdown Mode: 0.1µA (typ)
PART
MAX2620EUA -40°C to +85°C
TEMP RANGE PIN-PACKAGE
8 µMAX
_______________Ordering Information
MAX2620E/D -40°C to +85°C Dice*
Pin Configuration appears at end of data sheet.
*Dice are tested at T
A
= +25°C, DC parameters only.
____________________________________________________Typical Operating Circuit
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
MAX2620
10MHz to 1050MHz Integrated RF Oscillator with Buffered Outputs
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(VCC1, VCC2 = +2.7V to +5.25V, FDBK = open, TANK = open, OUT and OUT connected to VCCthrough 50Ω, SHDN = 2V, T
A
= -40°C to +85°C, unless otherwise noted. Typical values measured at VCC1 = VCC2 = 3.0V, TA= +25°C.) (Note 1)
AC ELECTRICAL CHARACTERISTICS
(Test Circuit of Figure 1, VCC= +3.0V, SHDN = VCC, Z
LOAD
= Z
SOURCE
= 50Ω, PIN= -20dBm (50), f
TEST
= 900MHz,
T
A
= +25°C, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
VCC1, VCC2 to GND .................................................-0.3V to +6V
TANK, SHDN to GND .................................-0.3V to (V
CC
+ 0.3V)
OUT, OUT to GND...........................(V
CC
- 0.6V) to (VCC+ 0.3V)
FDBK to GND ..................................(V
CC
- 2.0V) to (VCC+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C)
µMAX (derate 5.7mW/°C above +70°C) .....................457mW
Operating Temperature Range
MAX2620EUA .................................................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +165°C
Lead Temperature (soldering, 10s) .................................+300°C
µA
0.1 2
SHDN = 0.6V
Shutdown Current
mA9.0 12.5
UNITSMIN TYP MAXCONDITIONSPARAMETER
Supply Current
V2.0Shutdown Input Voltage High
V0.6Shutdown Input Voltage Low
µA5.5 20
SHDN = 2.0V
Shutdown Bias Current High
µA0.5
SHDN = 0.6V
Shutdown Bias Current Low
MHz10 1050TA= -40°C to +85°C (Note 2)
UNITSMIN TYP MAXCONDITIONSPARAMETER
Frequency Range
dB50
OUT or OUT to TANK; OUT, OUT driven at P = -20dBm
Reverse Isolation
dB33
OUT to OUT
Output Isolation
Note 2: Guaranteed by design and characterization at 10MHz, 650MHz, 900MHz, and 1050MHz. Over this frequency range, the
magnitude of the negative real impedance measured at TANK is greater than one-tenth the magnitude of the reactive impedances at TANK. This implies proper oscillator start-up when using an external resonator tank circuit with Q > 10. C3 and C4 must be tuned for operation at the desired frequency.
Note 1: Specifications are production tested and guaranteed at T
A
= +25°C and TA= +85°C. Specifications are guaranteed by
design and characterization at T
A
= -40°C.
MAX2620
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
_______________________________________________________________________________________ 3
TYPICAL OPERATING CIRCUIT PERFORMANCE—900MHz Band Ceramic­Resonator-Based Tank
(Typical Operating Circuit, VCC= +3.0V, V
TUNE
= 1.5V, SHDN = V
CC,
load at OUT = 50, load at OUT = 50, L1 = coaxial ceramic
resonator: Trans-Tech SR8800LPQ1357BY, C6 = 1pF, T
A
= +25°C, unless otherwise noted.)
-110
SSB at f = 25kHz
MHz±13V
TUNE
= 0.5V to 3.0V
UNITSMIN TYP MAXCONDITIONSPARAMETER
Tuning Range
dBc/Hz
-132
SSB at f = 300kHz
Phase Noise
-6 -2At OUT (Note 2)
dBc-29Second-Harmonic Output
MHz/V11Average Tuning Gain
kHz
P-P
163VSWR = 1.75:1, all phasesLoad Pull
kHz/V71VCCstepped from 3V to 4VSupply Pushing
Note 3: Guaranteed by design and characterization.
dBm/Hz-147fO± >10MHzNoise Power
-11 -8
At OUT, per test circuit of Figure 1; TA= -40°C to +85°C (Note 3)
dBm
-16 -12.5
At OUT (Note 3)
Output Power (Single-Ended)
TYPICAL OPERATING CIRCUIT PERFORMANCE—900MHz Band Inductor-Based Tank
(Typical Operating Circuit, VCC= +3.0V, V
TUNE
= 1.5V, SHDN = V
CC,
load at OUT = 50, load at OUT = 50, L1 = 5nH (Coilcraft
A02T), C6 = 1.5pF, T
A
= +25°C, unless otherwise noted.)
MHz/V13Average Tuning Gain
dBm/Hz-147fO± >10MHzNoise Power
kHz
P-P
340VSWR = 1.75:1, all phase anglesLoad Pull
kHz/V150VCCstepped from 3V to 4VSupply Pushing
-11 -8
At OUT, per test circuit of Figure 1; TA= -40°C to +85°C (Note 3)
dBm
-16 -12.5
At OUT (Note 3)
Output Power (single-ended)
-107
SSB at f = 25kHz
MHz±15V
TUNE
= 0.5V to 3.0V
UNITSMIN TYP MAXCONDITIONSPARAMETER
Tuning Range
dBc/Hz
-127
SSB at f = 300kHz
Phase Noise
-6 -2At OUT (Note 2)
dBc-29Second-Harmonic Output
Note 3: Guaranteed by design and characterization.
MAX2620
10MHz to 1050MHz Integrated RF Oscillator with Buffered Outputs
4 _______________________________________________________________________________________
__________________________________________Typical Operating Characteristics
(Test Circuit of Figure 1, VCC= +3.0V, SHDN = VCC, Z
LOAD
= Z
SOURCE
= 50Ω, PIN= -20dBm/50, f
TEST
= 900MHz, TA= +25°C,
unless otherwise noted.)
-5
B
C
0
A: B:
C:
10MHz BAND CIRCUIT NOT CHARACTERIZED FOR THIS FREQUENCY BAND. EXPECTED PERFORMANCE SHOWN. 900MHz BAND CIRCUIT
200 400 600 800 1000 1200
OUT OUTPUT POWER vs. FREQUENCY
OVER V
CC
AND TEMPERATURE
-7
MAX2620-01
FREQUENCY (MHz)
POWER (dBm)
-9
-6
-8
TA = +85°C T
A
= +25°C
T
A
= -40°C
V
CC
= 5.25V
V
CC
= 5.25V
V
CC
= 2.7V
V
CC
= 2.7V
A
-13.0
-13.5
-12.0
-12.5
-11.0
-11.5
0 400200 600 800 1000 1200
OUT OUTPUT POWER vs. FREQUENCY
OVER V
CC
AND TEMPERATURE
MAX2620-02
FREQUENCY (MHz)
POWER (dBm)
V
CC
= 5.25V
V
CC
= 2.7V
TA = +85°C
TA = +25°C
TA = -40°C
FREQUENCY
(MHz)
REAL COMPONENT
(R in Ω)
IMAGINARY COMPONENT
(X in Ω)
250 106 163
350 68 102
450 60 96
550 35 79
1050 6.5 22.7
Table 1. Recommended Load Impedance at OUT or OUT for Optimum Power Transfer
850
650 17.5 62.3
750 17.2 50.6
10.9 33.1
950 7.3 26.3
MAX2620
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
_______________________________________________________________________________________ 5
_____________________________Typical Operating Characteristics (continued)
(Typical Operating Circuit, VCC= +3.0V, V
TUNE
= 1.5V, SHDN = V
CC,
load at OUT = 50, load at OUT = 50, L1 = coaxial ceramic
resonator: Trans-Tech SR8800LPQ1357BY, C6 = 1pF, T
A
= +25°C, unless otherwise noted.)
REVERSE ISOLATION vs. FREQUENCY
VCC = 2.7V TO 5.25V
0
C3, C4 REMOVED
-10
-20
-30
-40
-50
-60
REVERSE ISOLATION (dB)
-70
-80
-90 50 250 450 650 850 1050
FREQUENCY (MHz)
10MHz BAND CIRCUIT
TYPICAL 1/S11 vs. FREQUENCY
MEASURED AT TEST PORT
15MHz 28 + j79.8
10MHz
63.6 + j121.5
5MHz 262 + j261
MAX2620-03
MAX2620-05
TYPICAL 1/S11 vs. FREQUENCY
10.0
9.5 VCC = 5.25V
9.0
8.5
8.0
SUPPLY CURRENT (mA)
7.5
900MHz BAND CIRCUIT*
MEASURED AT TEST PORT
1050MHz 21 + j78
900MHz 36 + j90
800MHz 49 + j105
650MHz 84 + j142
*SEE FIGURE 1
SUPPLY CURRENT
vs. TEMPERATURE
VCC = 2.7V
MAX2620-04
MAX2620-06
C3 = C4 = 270pF L3 = 10µH C2 = C10 = C13 = 0.01µF
7.0
-20 0 20 40 60 80 100
-40 TEMPERATURE (°C)
MAX2620
10MHz to 1050MHz Integrated RF Oscillator with Buffered Outputs
6 _______________________________________________________________________________________
_______________________________________________________________Pin Description
NAME FUNCTIONPIN
3 FDBK
Oscillator Feedback Circuit Connection. Connecting capacitors of the appropriate value between FDBK and TANK and between FDBK and GND tunes the oscillator’s reflection gain (negative resistance) to peak at the desired oscillation frequency. Refer to the Applications Information section.
2 TANK Oscillator Tank Circuit Connection. Refer to the Applications Information section.
1 VCC1
Oscillator DC Supply Voltage. Decouple VCC1 with 1000pF capacitor to ground. Use a capacitor with low series inductance (size 0805 or smaller). Further power-supply decoupling can be achieved by adding a 10resistor in series from VCC1 to the supply. Proper power-supply decoupling is critical to the low noise and spurious performance of any oscillator.
8 OUT
Open-Collector Output Buffer. Requires external pull-up to the voltage supply. Pull-up can be resistor, choke, or inductor (which is part of a matching network). The matching-circuit approach provides the high­est-power output and greatest efficiency. Refer to Table 1 and the Applications Information section. OUT can be used with OUT in a differential output configuration.
7 VCC2
Output Buffer DC Supply Voltage. Decouple VCC2 with a 1000pF capacitor to ground. Use a capacitor with low series inductance (size 0805 or smaller).
6 GND Ground Connection. Provide a low-inductance connection to the circuit ground plane.
5
OUT
Open-Collector Output Buffer (complement). Requires external pull-up to the voltage supply. Pull-up can be resistor, choke, or inductor (which is part of a matching network). The matching-circuit approach provides the highest-power output and greatest efficiency. Refer to Table 1 and the Applications Information section. OUT can be used with OUT in a differential output configuration.
4
SHDN
Logic-Controlled Input. A low level turns off the entire circuitry such that the IC will draw only leakage current at its supply pins. This is a high-impedance input.
_____________________________Typical Operating Characteristics (continued)
(Typical Operating Circuit, VCC= +3.0V, V
TUNE
= 1.5V, SHDN = V
CC,
load at OUT = 50, load at OUT = 50, L1 = coaxial ceramic
resonator: Trans-Tech SR8800LPQ1357BY, C6 = 1pF, T
A
= +25°C, unless otherwise noted.)
-114
-112
-110
-108
-106
-104
-40 -20 0 20 40 60 80
PHASE NOISE vs. TEMPERATURE
MAX2620-07
TEMPERATURE (°C)
SSB PHASE NOISE (dBc/Hz)
SSB @ f = 25kHz
L1 = 5nH INDUCTOR C6 = 1.5pF
L1 = COAXIAL CERAMIC RESONATOR (TRANS-TECH SR8800LPQ1357BY) C6 = 1pF
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0 1.3 2.6 3.9 5.2 6.5
OUTPUT SPECTRUM
FUNDAMENTAL NORMALIZED TO 0dB
MAX2620-08
FREQUENCY (GHz)
RELATIVE OUTPUT LEVEL (dBc)
-150
-140
-130
-120
-110
-100
-90
-80
-70
-60
-50
-40
0.1 10 1000100
SINGLE SIDEBAND PHASE NOISE
MAX2620-09
OFFSET FREQUENCY (kHz)
SSB PHASE NOISE (dBc/Hz)
1
L1 = 5nH INDUCTOR C6 = 1.5pF
L1 = COAXIAL CERAMIC RESONATOR (TRANS-TECH SR8800LPQ1357BY) C6 = 1pF
MAX2620
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
_______________________________________________________________________________________ 7
_______________Detailed Description
Oscillator
The oscillator is a common-collector, negative­resistance type that uses the IC’s internal parasitic ele­ments to create a negative resistance at the base­emitter port. The transistor oscillator has been opti­mized for low-noise operation. Base and emitter leads are provided as external connections for a feedback capacitor and resonator. A resonant circuit, tuned to the appropriate frequency and connected to the base lead, will cause oscillation. Varactor diodes may be used in the resonant circuit to create a voltage-con­trolled oscillator (VCO). The oscillator is internally biased to an optimal operating point, and the base and emitter leads need to be capacitively coupled due to the bias voltages present.
Output Buffers
The output buffers (OUT and OUT) are an open­collector, differential-pair configuration and provide load isolation to the oscillator. The outputs can be used differentially to drive an integrated circuit mixer. Alternatively, isolation is provided between the buffer outputs when one output drives a mixer (either upcon­version or downconversion) and the other output drives a prescaler. The isolation in this configuration prevents prescaler noise from corrupting the oscillator signal’s spectral purity.
A logic-controlled SHDN pin turns off all bias to the IC when pulled low.
__________Applications Information
Design Principles
At the frequency of interest, the MAX2620 portion of Figure 2 shows the one-port circuit model for the TANK pin (test port in Figure 1).
For the circuit to oscillate at a desired frequency, the res­onant tank circuit connected to TANK must present an impedance that is a complement to the network (Figure 2). This resonant tank circuit must have a positive real component that is a maximum of one-half the magni­tude of the negative real part of the oscillator device, as well as a reactive component that is opposite in sign to the reactive component of the oscillator device.
Figure 2. Simplified Oscillator Circuit Model
MAX2620
1
2
V
CC
1
TANK
FDBK
SHDN
3
4
8
OUT
V
CC
2
OUT
GND
7
6
5
V
CC
V
CC
V
CC
VCC
V
CC
TEST PORT
BIAS
SUPPLY
C13*
1000pF
C2*
1000pF
ON
OFF
1000pF
1000pF
1000pF
10
10
L3*
220nH
51
C3*
2.7pF
C4* 1pF
1000pF
1000pF
C10*
1000pF
Z
O
= 50
*AT 10MHz, CHANGE TO: C3 = C4 = 270pF L3 = 10µH C2 = C10 = C13 = 0.01µF
Z
O
= 50
OUT
OUT
Figure 1. 900MHz Test Circuit
TANK
-jX
T
OSCILLATOR DEVICE
jX
TIMES R
L
LESS THAN 1/2
L
RESONANT TANK
-R
n
MAX2620
10MHz to 1050MHz Integrated RF Oscillator with Buffered Outputs
8 _______________________________________________________________________________________
Keeping the resonant tank circuit’s real component less than one-half the magnitude of the negative real com­ponent ensures that oscillations will start. After start-up, the oscillator’s negative resistance decreases, primarily due to gain compression, and reaches equilibrium with the real component (the circuit losses) in the resonant tank circuit. Making the resonant tank circuit reactance tunable (e.g., through use of a varactor diode) allows for tuneability of the oscillation frequency, as long as the oscillator exhibits negative resistance over the desired tuning range. See Figures 3 and 4.
The negative resistance of the MAX2620 TANK pin can be optimized at the desired oscillator frequency by proper selection of feedback capacitors C3 and C4. For example, the one-port characteristics of the device are given as a plot of 1/S11 in the Typical Operating Characteristics. 1/S11 is used because it maps inside the unit circle Smith chart when the device exhibits negative resistance (reflection gain).
Figure 3. 10MHz VCO LC Resonator
V
TUNE
C5
150pF
1k
C17 33pF
C6 33pH
D1
L1
2.2µH
C3 270pF
C4 270pF
V
CC
10
1000pF
1
VCC1
MAX2620
2
TANK
3
FDBK
4
SHDN
OUT
V
GND
OUT
CC
1000pF
2
10µH
8
7
6
5
V
CC
27pF
0.01µF
V
CC
1000pF
0.01µF
OUT TO MIXER
OUT TO SYNTHESIZER
SHDN
D1 = SMV1200-155 DUAL VARACTOR
51
1000pF
V
CC
MAX2620
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
_______________________________________________________________________________________ 9
Sample Calculation
According to the electrical model shown in Figure 5, the resonance frequency can be calculated as:
[Equation 1]
R
n
, the negative real impedance, is set by C3 and C4
and is approximately:
[Equation 2]
where gm= 18mS.
Using the circuit model of Figure 5, the following exam­ple describes the design of an oscillator centered at 900MHz.
Choose: L1 = 5nH ±10%
Q = 140
Calculate: R
p
= Q ×2π×f ×L1
Using Equation 1, solve for varactor capacitance (CD1). CD1is the capacitance of the varactor when the volt­age applied to the varactor is approximately at half­supply (the center of the varactor’s capacitance range). Assume the following values:
C
STRAY
= 2.7pF, C17 = 1.5pF, C6 = 1.5pF, C5 = 1.5pF,
C03= 2.4pF, C04= 2.4pF, C3 = 2.7pF, and C4 = 1pF
The value of C
STRAY
is based on approximate perfor­mance of the MAX2620 EV kit. Values of C3 and C4 are chosen to minimize Rn(Equation 2) while not loading the resonant circuit with excessive capacitance. C
03
and C04are parasitic capacitors.
The varactor’s capacitance range should allow for the desired tuning range. Across the tuning frequency range, ensure that Rs< 1/2 Rn.
The MAX2620’s oscillator is optimized for low-phase­noise operation. Achieving lowest phase-noise charac­teristics requires the use of high-Q (quality factor)
components such as ceramic transmission-line type
Figure 4. 10MHz Crystal Oscillator
V
CC
10
0.01µF
1
VCC1
30pF
120pF
120pF
SHDN
X = STATEK AT-3004 10MHz FUNDAMENTAL MODE CRYSTAL SURFACE MOUNT
= 20pF
C
LOAD
2
TANK
MAX2620
3
FDBK
4
SHDN
OUT
V
GND
OUT
V
CC
0.01µF
10µH
8
7
2
CC
6
5
51
27pF
0.01µF
V
CC
0.01µF
0.01µF
0.01µF
V
CC
OUT
OUT
f
=
O
2 L1 C +
π
where C
=
n
 
STRAY
C + C C + C
()()
303404
C + C + C + C
303404
1
C x C
17 D1
C + C
17 D1
C
++
6
C x C
5n
C + C
5n
Rg
=
nm
2
1
ππ
fC C fC C
()
303 404
+
2
()
1
 
+
  
MAX2620
10MHz to 1050MHz Integrated RF Oscillator with Buffered Outputs
10 ______________________________________________________________________________________
resonators or high-Q inductors. Also, keep C5 and C17 (see the Typical Operating Circuit) as small a value as possible while still maintaining desired frequency and tuning range to maximize loaded Q.
There are many good references on the topic of oscilla­tor design. An excellent reference is “The Oscillator as a Reflection Amplifier, an Intuitive Approach to Oscillator Design,” by John W. Boyles, Microwave Journal, June 1986, pp. 83–98.
Output Matching Configuration
Both of the MAX2620’s outputs (OUT and OUT) are open collectors. They need to be pulled up to the sup­ply by external components. An easy approach to this pull-up is a resistor. A 50resistor value would inher­ently match the output to a 50system. The Typical Operating Circuit shows OUT configured this way. Alternatively, a choke pullup (Figure 1), yields greater output power (approximately -8dBm at 900MHz).
When maximum power is required, use an inductor as the supply pull-up, and match the inductor’s output impedance to the desired system impedance. Table 1 in the Typical Operating Characteristics shows recom­mended load impedance presented to OUT and OUT
for maximum power transfer. Using this data and stan­dard matching-network synthesis techniques, a match­ing network can be constructed that will optimize power output into most load impedances. The value of the inductor used for pullup should be used in the synthe­sis of the matching network.
__________________Pin Configuration
Figure 5. Electrical Model of MAX2620 Circuit
+ jX
R
S
C
PC BOARD PARASITICS
STRAY
C17
C
D1
VARACTOR+ COUPLING
L1
R
p
INDUCTOR OR CERAMIC RESONATOR
S
C5
C6
TEST PORT MEASUREMENT (FIGURE 1)
MAX2620
C
C3
C4
03
2.4pF
C
04
2.4pF
R
n
RESONANT TANK MODEL
MAX2620 PACKAGE MODEL
TOP VIEW
1
V
1
CC
2
TANK
FDBK
SHDN
3
4
MAX2620
µMAX
8
OUT
2
V
7
CC
GND
6
5
OUT
MAX2620
10MHz to 1050MHz Integrated
RF Oscillator with Buffered Outputs
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 11
© 2002 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/packages.)
0.6±0.1
0.6±0.1
8
b
E H
A1
A
ÿ 0.50±0.1
1
D
TOP VIEW
A2
e
FRONT VIEW
4X S
BOTTOM VIEW
c
L
SIDE VIEW
8
1
DIM
A A1 A2
b
c
D
e
E
H
L
α
S
INCHES
MIN
-
0.002
0.030
0.010
0.005
0.116
0.0256 BSC
0.116
0.188
0.016 0
0.0207 BSC
MAX
0.043
0.006
0.037
0.014
0.007
0.120
0.120
0.198
0.026 6
MILLIMETERS
MIN
0.05 0.15
0.25 0.36
0.13 0.18
2.95 3.05
2.95 3.05
4.78
0.41
MAX
- 1.10
0.950.75
0.65 BSC
5.03
0.66 60
0.5250 BSC
α
8LUMAXD.EPS
PROPRIETARY INFORMATION
TITLE:
PACKAGE OUTLINE, 8L uMAX/uSOP
REV.DOCUMENT CONTROL NO.APPROVAL
21-0036
1
J
1
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