Maxim MAX2602ESA, MAX2602E-D, MAX2601ESA Datasheet

_______________General Description

The MAX2601/MAX2602 are RF power transistors opti­mized for use in portable cellular and wireless equipment
that operates from three NiCd/NiMH cells or one Li-Ion
cell. These transistors deliver 1W of RF power from a

3.6V supply with efficiency of 58% when biased for con­stant-envelope applications (e.g., FM or FSK). For NADC
(IS-54) operation, they deliver 29dBm with -28dBc ACPR
from a 4.8V supply.

The MAX2601 is a high-performance silicon bipolar RF
power transistor. The MAX2602 includes a high­performance silicon bipolar RF power transistor, and a
biasing diode that matches the thermal and process
characteristics of the power transistor. This diode is
used to create a bias network that accurately controls
the power transistor’s collector current as the tempera­ture changes.

The MAX2601/MAX2602 can be used as the final stage
in a discrete or module power amplifier. Silicon bipolar
technology eliminates the need for voltage inverters
and sequencing circuitry, as required by GaAsFET
power amplifiers. Furthermore, a drain switch is not
required to turn off the MAX2601/MAX2602. This
increases operating time in two ways: it allows lower
system end-of-life battery voltage, and it eliminates the
wasted power from a drain-switch device.

The MAX2601/MAX2602 are available in thermally
enhanced, 8-pin SO packages, which are screened to
the extended temperature range (-40°C to +85°C). The
MAX2602 is also available in die form.

________________________Applications

Narrow-Band PCS (NPCS)
915MHz ISM Transmitters
Microcellular GSM (Power Class 5)
AMPS Cellular Phones
Digital Cellular Phones
Two-Way Paging
CDPD Modems
Land Mobile Radios

____________________________Features

♦ Low Voltage: Operates from 1 Li-Ion or

3 NiCd/NiMH Batteries

♦ DC-to-Microwave Operating Range
♦ 1W Output Power at 900MHz
♦ On-Chip Diode for Accurate Biasing (MAX2602)
♦ Low-Cost Silicon Bipolar Technology
♦ Does Not Require Negative Bias or Supply Switch
♦ High Efficiency: 58%

MAX2601/MAX2602

3.6V, 1W RF Power Transistors
for 900MHz Applications

________________________________________________________________

Maxim Integrated Products

1

PSOPII

TOP VIEW

PSOPII

8

7

6

5

1

2

3

4

C

E

E

B

C

E

E

B

MAX2602

8

7

6

5

1

2

3

4

C

E

BIAS

B

C

E

E

B

MAX2601

_________________Pin Configurations

19-1185; Rev 2; 5/97

PART

MAX2601ESA
MAX2602ESA

MAX2602E/D -40°C to +85°C

-40°C to +85°C

-40°C to +85°C

TEMP. RANGE PIN-PACKAGE

8 PSOPII
8 PSOPII
Dice*

______________Ordering Information

Typical Application Circuit appears at end of data sheet.

EVALUATION KIT

AVAILABLE

*

Dice are specified at TA= +25°C, DC parameters only.

For free samples & the latest literature: http://www.maxim-ic.com, or phone [phone].
For small orders, phone [phone] ext. 3468.

dBc

MAX2601/MAX2602

3.6V, 1W RF Power Transistors
for 900MHz Applications

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

DC ELECTRICAL CHARACTERISTICS

(TA= T

MIN

to T

MAX

, unless otherwise noted.)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

Collector-Emitter Voltage, Shorted Base (V

CES

)....................17V

Emitter Base Reverse Voltage (V

EBO

)...................................2.3V

BIAS Diode Reverse Breakdown Voltage (MAX2602)..........2.3V

Average Collector Current (I

C

)........................................1200mA

Continuous Power Dissipation (T

A

= +70°C)

PSOPII (derate 80mW/°C above +70°C) (Note 1) ..........6.4W

Operating Temperature Range ...........................-40°C to +85°C

Storage Temperature Range.............................-65°C to +165°C

Junction Temperature......................................................+150°C

Lead Temperature (soldering, 10sec).............................+300°C

I

C

< 100µA

V5.0LV

CEO

Collector-Emitter Sustaining
Voltage

V

15BV

CES

15BV

CEO

Collector-Emitter Breakdown
Voltage

100h

FE

DC Current Gain

µA0.05 1.5I

CES

Collector Cutoff Current

pF9.6C

OB

Output Capacitance

UNITSMIN TYP MAXSYMBOLPARAMETER

Note 1: Backside slug must be properly soldered to ground plane (see

Slug Layout Techniques

section).

IC= 200mA

Shorted base

Open base

IC= 250mA, VCE= 3V
VCE= 6V, VBE= 0V
VCB= 3V, IE= 0mA, f = 1MHz

CONDITIONS

dB3.3NFNoise Figure

dBc

-25IM5

Two-Tone IMR

-16IM3

8:1V

SWR

Stability under Continuous
Load Mismatch Conditions

%58

η

Collector Efficiency

dB11.6Power Gain

-42

2fo, 3foHarmonics

-43

mA4.2I

B

Base Current

GHzDC 1fFrequency Range

UNITSMIN TYP MAXSYMBOLPARAMETER

VBB= 0.9V

P

OUT

= +30dBm total power, f1 = 835MHz,

f2 = 836MHz

VCC= 3.6V, P

OUT

= 30dBm

VCC= 5.5V, all angles (Note 3)

(Note 2)

No modulation

P

OUT

= 30dBm

CONDITIONS

AC ELECTRICAL CHARACTERISTICS

(Test Circuit of Figure 1, VCC= 3.6V, VBB= 0.750V, Z

LOAD

= Z

SOURCE

= 50Ω, P

OUT

= 30dBm, f = 836MHz, TA= +25°C, unless oth-

erwise noted.)

Note 2: Guaranteed by design.
Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than -60dBc; b) no parametric

degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation
capability is observed.

V15BV

CBO

Collector-Base Breakdown
Voltage

IC< 100µA, emitter open

VCC= 3.0V, P

OUT

= 29dBm

dBc