Maxim MAX2430ISE, MAX2430IEE Datasheet
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________________General Description
The MAX2430 is a versatile, silicon RF power amplifier
that operates directly from a 3V to 5.5V supply, making
it suitable for 3-cell NiCd or 1-cell lithium-ion battery
applications. It is designed for use in the 800MHz to
1000MHz frequency range and, at 915MHz, can produce +21dBm (125mW) of output power with greater
than 32dB of gain at VCC= 3.6V.
A unique shutdown function provides an off supply current of typically less than 1µA to save power during
“idle slots” in time-division multiple-access (TDMA)
transmissions. An external capacitor sets the RF output
power envelope ramp time. External power control is
also possible over a 15dB range. The amplifier’s input
is matched on-chip to 50Ω. The output is an open collector that is easily matched to a 50Ω load with few
external components.
The MAX2430 is ideal as a driver amplifier for portable
and mobile telephone systems, or as a complete power
amplifier for other low-cost applications, such as those
in the 915MHz spread-spectrum ISM band. It is fabricated with Maxim’s high-frequency bipolar transistor
process and is available in a thermally enhanced,
16-pin narrow SO and miniature 16-pin PwrQSOP packages with heat slug.
________________________Applications
Digital Cordless Phones
915MHz ISM-Band Applications
Two-Way Pagers
Wireless LANs
Cellular Phones
AM and FM Analog Transmitters
____________________________Features
♦ Operates Over the 800MHz to 1000MHz Frequency
Range
♦ Delivers 125mW at 915MHz from +3.6V Supply
(100mW typical from +3.0V supply)
♦ Operates Directly from 3-Cell NiCd or 1-Cell
Lithium-Ion Battery
♦ Over 32dB Power Gain
♦ RF Power Envelope Ramping is Programmable
with One External Capacitor
♦ Input Matched to 50Ω (VSWR < 2:1)
♦ 15dB Output Power Control Range
♦ 1µA Typical Shutdown Current
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
________________________________________________________________
Maxim Integrated Products
1
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
GND3
GND3
GND4
GND4
GND4
GND4
BIAS
RFOUT
GND3
SHDN
GND2
RFIN
GND2
GND1
VCC1
VCC2
TOP VIEW
MAX2430
Narrow SO/PwrQSOP
Pin Configuration
MAX2430
MASTER
BIAS
GAIN
GND2
NOTE: MAX2430IEE (PwrQSOP PACKAGE) UNDERSIDE METAL
SLUG MUST BE SOLDERED TO PCB GROUND PLANE.
GND3
VCC1 VCC2 BIAS
GND4
RFOUT
9
1087
11, 12, 13, 141, 15, 163, 5
SHDN
GND1
RFIN
2
6
4
DRIVER
OUTPUT
BIAS
Functional Diagram
19-1093; Rev 2; 1/98
PART TEMP. RANGE PIN-PACKAGE
EVALUATION KIT MANUAL
FOLLOWS DATA SHEET
Ordering Information
MAX2430IEE -20°C to +85°C 16 PwrQSOP
MAX2430ISE -20°C to +85°C 16 Narrow SO
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(VCC= VCC1 = VCC2 = RFOUT = 3V to 5.5V, GND1 = GND2 = GND3 = GND4 = 0V, SHDN = 2.2V, BIAS = open, RFIN = open,
T
A
= -20°C to +85°C, unless otherwise noted.)
AC ELECTRICAL CHARACTERISTICS
(MAX2430 EV kit, f = 915MHz, VCC= 3.6V, SHDN = VCC, RFOUT matched to 50Ω resistive load, output measurements taken after
matching network, T
A
= +25°C, unless otherwise noted.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCC1, VCC2..........................................................................+6V
SHDN, BIAS...................................................-0.3V, (V
CC
+ 0.3V)
RFIN.............................................................................-0.3V, +2V
P
RFIN
..................................................................................-3dBm
Continuous Power Dissipation (T
A
= +70°C)
PwrQSOP (derate 20mW/°C above +70°C)......................1.6W
Narrow SO (derate 20mW/°C above +70°C) ....................1.6W
Operating Temperature Range ...........................-20°C to +85°C
Storage Temperature Range.............................-65°C to +160°C
Lead Temperature (soldering, 10sec).............................+300°C
SHDN = low
No RF input applied, VCC= 5.5V
BIAS pin open
SHDN = V
CC
CONDITIONS
µA110I
CC(OFF
)Shutdown Supply Current
mA52 70I
CC
V3 5.5V
CC
Supply Voltage Range
Supply Current
V2.2V
BIAS
BIAS Pin Voltage
V2.2 V
CC
V
SHDN(HI)
SHDN High Input
V0.4V
SHDN(LO)
SHDN Low Input
µA18I
SHDN
SHDN Bias Current
UNITSMIN TYP MAXSYMBOLPARAMETER
VCC= 3.0V
VCC= 3.6V
(Note 2)
P
RFIN
= -20dBm
f1 = 915MHz, f2 = 916MHz,
P
OUT
per tone = 14dBm
CONDITIONS
dBm
19 20.4
P
1dB
P
OUT
at 1dB Compression
20 21.4
MHz800 1000Frequency Range
32 34
dBG
P
Power Gain
dBc-30OIM3Output IM3
UNITSMIN TYP MAXSYMBOLPARAMETER
P
OUT
= P
1dB
P
OUT
= P
1dB
P
OUT
= P
1dB
P
OUT
= P
1dB
RFIN connected to 50Ω source
%24
η
Efficiency
dBc-40
dBc-262nd Harmonic
3rd Harmonic
mA160I
CCRF
Supply Current
2:1VSWR
IN
Maximum Input VSWR
VCC= 3V to 5.5V, P
RFIN
≤ -10dBm (Note 3) 8:1VSWR
OUT
Maximum Output Load
Mismatch
dB7NFNoise Figure
VCC= 3V to 5.5V, P
RFIN
≤ -12dBm (Note 4) 6:1VSWR
OUT
Maximum Output Load
Mismatch for Stability
31 33
MAX2430ISE
MAX2430IEE
MAX2430
Low-Voltage, Silicon RF Power
Amplifier/Predriver
_______________________________________________________________________________________
3
25
20
15
5
10
0
250
150
200
100
50
0
P
IN
(dBm)
-15-20 -5-10-25
OUTPUT POWER AND CURRENT
vs. INPUT POWER
P
OUT
(dBm)
I
CC
(mA)
P
OUT
3.6V
3.6V
5.5V
5.5V
3V
3V
I
CC
25
20
15
10
5
250
200
150
100
50
TEMPERATURE (°C)
-20 0 20 40 60 80 100
OUTPUT POWER AND CURRENT
vs. TEMPERATURE
P
OUT
(dBm)
I
CC
(mA)
-5.5V
3.6V
3V
P
OUT
@ PIN = -12dBm
P
OUT
@ PIN = -17dBm
ICC @ PIN = -17dBm
ICC @ PIN = -12dBm
30
35
40
25
20
15
10
5
MAX2430-03
PIN (dBm)
-15-20 -5-10-25
OUTPUT POWER AND GAIN
vs. INPUT POWER
P
OUT
(dBm) GAIN (dB)
P
OUT
3.6V
3.6V
5.5V
5.5V
3V
3V
GAIN
35
15
-20 40 60 80 100
OUTPUT POWER AND GAIN
vs. TEMPERATURE
(NORMAL OPERATING MODE)
20
30
MAX1691-4a
TEMPERATURE (°C)
25
20
0
5.5V
3.6V
3.0V
GAIN (dB)P
OUT
(dBm)
PIN = -12dBm
GAIN
P
OUT
4.0
3.5
3.0
2.0
1.5
2.5
1.0
MAX2430-05
FREQUENCY (MHz)
400 600 800 1000 1200 1400 1600
INPUT VSWR
vs. FREQUENCY
VSWR
3V
5V
150
100
50
-50
-100
0
-150
MAX2430-06
FREQUENCY (MHz)
800400 1200 1600 2000
RF INPUT IMPEDANCE
vs. FREQUENCY
INPUT IMPEDANCE (Ω)
REAL
IMAG
__________________________________________Typical Operating Characteristics
(MAX2430EVKIT-SO, f = 915MHz, VCC= 3.6V, SHDN = VCC, output matched to 50Ω resistive load, output measurements taken after
matching network, T
A
= +25°C, unless otherwise noted.)
Note 1: Minimum and maximum parameters are guaranteed by design.
Note 2: For optimum performance at a given frequency, output matching network must be designed for maximum output power.
See
Applications Information
section. Operation outside this frequency range is possible but has not been characterized.
Note 3: No damage to the device.
Note 4: All non-harmonically related outputs are more than 60dB below the desired signal for any electrical phase.
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2430 EV kit, f = 915MHz, VCC= 3.6V, SHDN = VCC, output matched to 50Ω resistive load, output measurements taken after
matching network, T
A
= +25°C, unless otherwise noted.) (Note 1)
CONDITIONS
BIAS pin capacitor C1 = 120pF
BIAS pin capacitor C1 = 2.2nF
dB50
µs
1
10
Turn-On/Off Times
UNITSMIN TYP MAXSYMBOLPARAMETER
SHDN = 0.4V,
P
IN
= -10dBm
dB47
RFIN to RFOUT Isolation
MAX2430ISE
MAX2430IEE
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