Maxim MAX2410EEI, MAX2410E-D Datasheet

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________________General Description

The MAX2410 performs the RF front-end transmit/receive
function in time-division-duplex (TDD) communication
systems. It operates over a wide frequency range and
is optimized for RF frequencies around 1.9GHz.
Applications include most popular cordless and PCS
standards.

The MAX2410 contains a low-noise amplifier (LNA), a
downconverter mixer, a local-oscillator (LO) buffer, an
upconverter mixer, and a variable-gain power-amplifier
(PA) driver in a low-cost, plastic surface-mount package.
The LNA has a 2.4dB (typical) noise figure and a

-10dBm input third-order intercept point (IP3). The down­converter mixer has a low 9.8dB noise figure and a

3.3dBm IP3. Image and LO filtering are implemented off­chip for maximum flexibility. The PA driver has 15dB of
gain, which can be reduced over a 35dB (typical) range.
Power consumption is only 60mW in receive mode or
90mW in transmit mode and drops to less than 0.3µW in
shutdown mode.

A similar part, the MAX2411A, features the same func­tionality as the MAX2410 but offers a differential
bidirectional (transmit and receive) IF port. This allows
the use of a single IF filter for transmit (TX) and receive
(RX). For applications requiring a receive function only,
consult the data sheet for the MAX2406, a low-cost
downconverter with low-noise amplifier.

________________________Applications

PWT1900 DECT
DCS1800/PCS1900 ISM-Band Transceiver
PHS/PACS Iridium Handsets

____________________________Features

♦ Low-Cost Silicon Bipolar Design
♦ Integrated Upconvert/Downconvert Function
♦ Operates from Single +2.7V to +5.5V Supply
♦ 3.2dB Combined Receiver Noise Figure:

2.4dB (LNA)

9.8dB (Mixer)

♦ Flexible Power-Amplifier Driver:

18dBm Output Third-Order Intercept (OIP3)
35dB Gain Control Range

♦ LO Buffer for Low LO Drive Level
♦ Low Power Consumption:

60mW Receive
90mW Full-Power Transmit

♦ 0.3µW Shutdown Mode
♦ Flexible Power-Down Modes Compatible with

MAX2510/MAX2511 IF Transceivers

MAX2410

Low-Cost RF Up/Downconverter

with LNA and PA Driver

________________________________________________________________

Maxim Integrated Products

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20
19
18
17
16
15

1
2
3
4
5
6
7
8

9
10
11
12
13
14

GND
LNAOUT
GND
GND
RXMXIN
GND

GND

IFIN
IFOUT
GND
TXMXOUT
GND
GND
PADRIN

GND

PADROUT

GND

GC

V

CC

TXEN

LO

LO

RXEN

V

CC

GND

GND

LNAIN

GND

QSOP

TOP VIEW

MAX2410

___________________Pin Configuration

MAX2410

LNAIN

LNAOUT RXMXIN

PADRINGC TXMXOUT

TX MIXER

RX MIXER

RXEN
TXEN

PADROUT

IFOUT

LNA

PA DRIVER

LO
LO

IFIN

POWER

MANAGEMENT

19-1320; Rev 1; 3/98

PART

MAX2410EEI -40°C to +85°C

TEMP. RANGE PIN-PACKAGE

28 QSOP

EVALUATION KIT MANUAL

FOLLOWS DATA SHEET

_______________Ordering Information

Functional Diagram

MAX2410E/D -40°C to +85°C Dice*

*

Dice are specified at TA= +25°C, DC parameters only.

MAX2410

Low-Cost RF Up/Downconverter
with LNA and PA Driver

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

DC ELECTRICAL CHARACTERISTICS

(VCC= 2.7V to 5.5V, VGC= 3.0V, RXEN = TXEN = 0.6V, IFOUT and PADROUT pulled up to VCCwith 50Ω resistors, TXMXOUT pulled
up to V

CC

with 125Ω resistor, LNAOUT pulled up to VCCwith 100Ω resistor, all other RF and IF inputs open, TA= -40°C to +85°C,

unless otherwise noted. Typical values are at T

A

= +25°C and VCC= 3.0V.)

AC ELECTRICAL CHARACTERISTICS

(MAX2410 EV kit, VCC= 3.0V, VGC= 2.15V, RXEN = TXEN = low, fLO= 1.5GHz, PLO= -10dBm, f

LNAIN

= f

PADRIN

= f

RXMXIN

=

1.9GHz, P

LNAIN

= -32dBm, P

PADRIN

= P

RXMXIN

= -22dBm, f

IFIN

= 400MHz, P

IFIN

= -32dBm. All measurements performed in 50Ω

environment. T

A

= +25°C, unless otherwise noted.)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

VCCto GND..............................................................-0.3V to +6V

LNAIN Input Power.........................................................+15dBm

LO,

LO Input Power........................................................+10dBm

PADRIN Input Power......................................................+10dBm

RXMXIN Input Power......................................................+10dBm

IFIN Input Power.............................................................+10dBm

RXEN, TXEN, GC Voltage...........................-0.3V to (V

CC

+ 0.3V)

Continuous Power Dissipation (T

A

= +70°C)

QSOP (derate 11mW/°C above +70°C) .......................909mW

Junction Temperature......................................................+150°C

Operating Temperature Range ...........................-40°C to +85°C

Storage Temperature Range.............................-65°C to +165°C

Lead Temperature (soldering, 10sec).............................+300°C

RXEN, TXEN pins

RXEN, TXEN pins

V

CC

= 3V

RXEN = 2V, TXEN = 2V

RXEN = 2V
TXEN = 2V

RXEN = 2V
TXEN = 2V

CONDITIONS

V0.6Digital Input Voltage Low

V2.0

V2.7 5.5Supply Voltage Range

Digital Input Voltage High

µA0.1 10Supply Current, Shutdown Mode

µA160 520Supply Current, Standby Mode

µA0.1 1RXEN Input Bias Current (Note 1)
µA0.1 1TXEN Input Bias Current (Note 1)

mA20 29.5Supply Current, Receive Mode
mA30 44.5Supply Current, Transmit Mode

UNITSMIN TYP MAXPARAMETER

TA= T

MIN

to T

MAX

TA= +25°C

TA= +25°C

(Note 2)

RXEN = high or low

CONDITIONS

dB

12.6 19.1

Gain (Note 1)

14.2 16.2 17.4

6.6 8.3 9.8

dB2.4Noise Figure
dBm-10Input IP3
dBm-5Output 1dB Compression
dBm-49LO to LNAIN Leakage

UNITSMIN TYP MAXPARAMETER

TA= T

MIN

to T

MAX

dB

5.4 10.8

Conversion Gain (Note 1)

(Note 3) dBm3.3Input IP3

Single sideband dB9.8Noise Figure

dBm-8Input 1dB Compression

(Note 5) dBm-17Minimum LO Drive Level

(Notes 1, 4) MHz450IFOUT Frequency

LOW-NOISE AMPLIFIER (RXEN = High)

RECEIVE MIXER (RXEN = High)

GC = 3V, TXEN = 2V µA35 46GC Input Bias Current

MAX2410

Low-Cost RF Up/Downconverter

with LNA and PA Driver

_______________________________________________________________________________________ 3

AC ELECTRICAL CHARACTERISTICS (continued)

(MAX2410 EV kit, VCC= 3.0V, VGC= 2.15V, RXEN = TXEN = low, fLO= 1.5GHz, PLO= -10dBm, f

LNAIN

= f

PADRIN

= f

RXMXIN

=

1.9GHz, P

LNAIN

= -32dBm, P

PADRIN

= P

RXMXIN

= -22dBm, f

IFIN

= 400MHz, P

IFIN

= -32dBm. All measurements performed in 50Ω

environment. T

A

= +25°C, unless otherwise noted.)

Note 1: Guaranteed by design and characterization.
Note 2: Two tones at 1.9GHz and 1.901GHz at -32dBm per tone
Note 3: Two tones at 1.9GHz and 1.901GHz at -22dBm per tone
Note 4: Mixer operation guaranteed to this frequency. For optimum gain, adjust output match. See the

Typical Operating

Characteristics

for graphs of IFIN and IFOUT Impedance vs. IF Frequency.

Note 5: At this LO drive level the mixer conversion gain is typically 1dB lower than with -10dBm LO drive.
Note 6: Two tones at 400MHz and 401MHz at -32dBm per tone.
Note 7: Transmit mixer output at -17dBm.
Note 8: Calculated from measurements taken at V

GC

= 1.0V and VGC= 1.5V.

Note 9: Time from RXEN = low to RXEN = high transition until the combined receive gain is within 1dB of its final value. Measured

with 47pF blocking capacitors on LNAIN and LNAOUT.

Note 10: Time from TXEN = low to TXEN = high transition until the combined transmit gain is within 1dB of its final value. Measured

with 47pF blocking capacitors on PADRIN and PADROUT.

(Notes 1, 10)

(Notes 1, 9)

(Note 6)

Transmit (RXEN = Low)

Receive (TXEN = Low)

(Note 8)

f

OUT

= 2LO-2IF = 2.2GHz

(Note 3)

Single sideband

TA= T

MIN

to T

MAX

(Notes 1, 4)

TA= +25°C

CONDITIONS

µs0.3 2.5Transmitter Turn-On Time

µs0.5 2.5Receiver Turn-On Time

1.02

Input Relative VSWR Normalized to
Standby-Mode Impedance

1.10

dB/V12Gain-Control Sensitivity

dB35Gain-Control Range

dBm6.3Output 1dB Compression Point

dBm18Output IP3

12.3 17

Gain (Note 1) dB

13 15 16.4

dBm-0.3Output IP3

dBc-90

Intermod Spurious Response
(Note 7)

dBc-74

dBc-44

dBm-11.4Output 1dB Compression Point
dBm-52LO Leakage

dB8.2Noise Figure
MHz450IFIN Frequency

UNITSMIN TYP MAXPARAMETER

f

OUT

= 3LO-6IF = 2.1GHz

f

OUT

= 2LO-3IF = 1.8GHz

TA= T

MIN

to T

MAX

TA= +25°C

7.3 11.8

dB

8.6 10 11.1

Conversion Gain (Note 1)

TRANSMIT MIXER (TXEN = high)

POWER AMPLIFIER DRIVER (TXEN = high)

LOCAL OSCILLATOR INPUTS (RXEN = TXEN = high)

POWER MANAGEMENT (RXEN = TXEN = low)

MAX2410

Low-Cost RF Up/Downconverter
with LNA and PA Driver

4 _______________________________________________________________________________________

__________________________________________Typical Operating Characteristics

(MAX2410 EV kit, VCC= 3.0V, VGC= 2.15V, RXEN = TXEN = low, fLO= 1.5GHz, PLO= -10dBm, f

LNAIN

= f

PADRIN

= f

RXMXIN

=

1.9GHz, P

LNAIN

= -32dBm, P

PADRIN

= P

RXMXIN

= -22dBm, f

IFIN

= 400MHz, P

IFIN

= -32dBm. All measurements performed in 50Ω

environment. TA= +25°C, unless otherwise noted. All impedance measurements made directly to pin (no matching network).)

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34

32

36

38

-40 10-15 35 60 85

TRANSMIT-MODE SUPPLY CURRENT

vs. TEMPERATURE

MAX2410-01

TEMPERATURE (°C)

TRANSMIT-MODE SUPPLY CURRENT (mA)

VCC = 5.5V

TXEN = V

CC

VCC = 4.0V

VCC = 2.7V

VCC = 3.0V

17

19

18

21

20

23

22

24

-40 10-15 35 60 85

RECEIVE-MODE SUPPLY CURRENT

vs. TEMPERATURE

MAX2410-02

TEMPERATURE (°C)

RECEIVE-MODE SUPPLY CURRENT (mA)

VCC = 5.5V

RXEN = V

CC

VCC = 4.0V

VCC = 2.7V

VCC = 3.0V

0

0.03

0.02

0.01

0.04

0.05

0.06

0.07

0.08

0.09

0.10

-40 10-15 35 60 85

SHUTDOWN SUPPLY CURRENT

vs. TEMPERATURE

MAX2410-03

TEMPERATURE (°C)

SHUTDOWN SUPPLY CURRENT (µA)

VCC = 5.5V

RXEN = TXEN = GND

VCC = 4.0V

VCC = 2.7V

VCC = 3.0V

0

100

300

200

400

500

-40 10-15 35 60 85

STANDBY SUPPLY CURRENT

vs. TEMPERATURE

MAX2410-04

TEMPERATURE (°C)

STANDBY SUPPLY CURRENT (µA)

VCC = 5.5V

RXEN = TXEN = 2.0V

VCC = 4.0V

VCC = 2.7V

VCC = 3.0V

0

10

5

20

15

25

30

0 1.0 1.50.5 2.0 2.5 3.0

LNA GAIN vs. FREQUENCY

MAX2410-07

FREQUENCY (GHz)

LNA GAIN (dB)

1pF SHUNT CAPACITOR AT LNA INPUT
USING EV KIT MATCHING CIRCUIT (OPTIMIZED
FOR 1.9GHz)

RXEN = V

CC

0

40

20

80

60

100

120

0 1.0 1.50.5 2.0 2.5 3.0

LNA INPUT IMPEDANCE

vs. FREQUENCY

MAX2410-05

FREQUENCY (GHz)

REAL IMPEDANCE (Ω)

-200

-120

-160

-40

-80

0

40

IMAGINARY IMPEDANCE (Ω)

IMAGINARY

RXEN = V

CC

REAL

0

50

150

100

200

250

0 1.00.5 1.5 2.0 2.5 3.0

LNA OUTPUT IMPEDANCE

vs. FREQUENCY

MAX2410-06

FREQUENCY (GHz)

REAL IMPEDANCE (Ω)

-125

-100

-50

-75

-25

0

IMAGINARY IMPEDANCE (Ω)

IMAGINARY

REAL

RXEN = V

CC

13

15

14

17

16

19

18

20

-40 10-15 35 60 85

LNA GAIN vs. TEMPERATURE

MAX2410-08

TEMPERATURE (°C)

LNA GAIN (dB)

VCC = 5.5V

VCC = 4.0V

VCC = 2.7V

VCC = 3.0V

RXEN = V

CC

-15

-12

-13

-14

-10

-11

-6

-7

-8

-9

-5

-40 -20 0 20 40 60 10080

LNA INPUT IP3 vs. TEMPERATURE

MAX2410-09

TEMPERATURE (°C)

INPUT IP3 (dBm)

VCC = 5.5V

VCC = 4.0V

VCC = 2.7V

VCC = 3.0V

RXEN = V

CC