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General Description
The MAX2335 RF front-end receiver IC is designed for
CDMA and OFDM applications in the 450MHz band.
The MAX2335 includes a low-noise amplifier (LNA) with
adjustable IIP3 to minimize desensitization due to crossmodulation in the presence of a large interfering signal.
The mixer features differential IF outputs and is
designed for high linearity and low noise, which is well
suited for CDMA and OFDM applications.
An on-chip frequency divider is included to allow the
use of a standard 1GHz VCO. Alternatively, the divider
can be bypassed for use with a lower-frequency VCO.
The MAX2335 is available in a 28-pin TQFN package
with exposed paddle and is specified for the -40°C to
+85°C extended temperature range. The device is also
offered in a lead-free package.
Features
♦ 1.5dB LNA Noise Figure
♦ 16dB LNA Gain
♦ 2.1dB Cascaded Noise Figure
♦ Adjustable LNA IIP3
♦ LO Output Buffer for Transmitter
♦ LO Frequency Divider
♦ Small 5mm x 5mm, 28-Pin (Lead-Free) TQFN
Package
MAX2335
450MHz CDMA/OFDM LNA/Mixer
________________________________________________________________ Maxim Integrated Products 1
MAX2335
TOP VIEW
÷2
THIN QFN
5mm x 5mm
26
27
25
24
10
9
11
R
LNA
LNAIN
MODEO
MODE1
MODE2
12
DEGEN
IF_CDMA+
N.C.
BUFFEN
EP
R
BIAS
VCCV
CC
12
N.C.
4567
2021 19 17 16 15
V
CC
N.C.
I.C.
N.C.
LO_IN
LO/2
GND
IF_CDMA-
3
18
28
8
LNAOUT
N.C.
N.C.
23
13
LO_OUT
I.C.
22
14
N.C.
MIXIN
+
Pin Configuration/
Functional Diagram
Ordering Information
19-0492; Rev 0; 10/05
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
*EP = Exposed paddle.
+Denotes lead-free package.
EVALUATION KIT
AVAILABLE
Applications
450MHz-Band, WCDMA, IS-95, IS-2000, OFDM,
Wireless Data Links
-40°C to +85°C
-40°C to +85°C
28 Thin QFN-EP*
28 Thin QFN-EP*
MAX2335
450MHz CDMA/OFDM LNA/Mixer
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(VCC= +2.9V to +3.3V, R
BIAS
= 18kΩ, R
LNA
= 24kΩ, BUFFEN = LOW, LO/2 = HIGH, TA= -40°C to +85°C, unless otherwise noted.
Typical values are at V
CC
= +2.9V, LOW = 0V, HIGH = +3.0V, TA= +25°C, unless otherwise noted.) (Note 1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCCto GND...........................................................-0.3V to +4.3V
All Other Pins to GND.................................-0.3V to (V
CC
+ 0.3V)
AC Input Pins (LNAIN, LO_IN, MIXIN) to GND ...............1V Peak
Continuous Power Dissipation (T
A
= +70°C)
28-Pin Thin QFN (derate 34.5mW/°C above +70°C) ...........2.7W
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
CAUTION! ESD SENSITIVE DEVICE
HGHL mode (MODE[2:0] = 111) 32 38
HGLL mode (MODE[2:0] = 101) 24 29
Operating Supply Current I
CC
LG mode (MODE[2:0] = 011) 27 31
mA
Shutdown Supply Current I
CC
Shutdown mode (MODE[2:0] = 000) 0.2 10 µA
LO Buffer Supply Current I
CC
Addition for BUFFEN = HIGH 7 13 mA
Digital Input-Logic High V
IH
2V
Digital Input-Logic Low V
IL
0.6 V
Digital Input Current (Logic-High)
Digital Input Current (Logic-Low)
AC ELECTRICAL CHARACTERISTICS
(MAX2335 EV Kit, VCC= +2.9V to +3.3V, f
LNAIN
= f
MIXIN
= 465MHz, fIF= 110MHz, fLO= 2 x (f
MIXIN
+ fIF), 50Ω system impedance,
R
BIAS
= 18kΩ, R
LNA
= 24kΩ, cascaded performance includes 2dB interstage filter loss, TA= -40°C to +85°C, unless otherwise
noted. Typical values are at V
CC
= +2.9V, P
LO_IN
= -7dBm, LOW = 0V, HIGH = +3.0V, TA= +25°C, unless otherwise noted.)
SYMBOL
MIN TYP MAX
OVERALL PERFORMANCE
RF Frequency Range f
LO Frequency Range f
IF Frequency Range f
LO Input Power (Note 2) -7 -3 0 dBm
LO Buffer Output Power BUFFEN = HIGH -10 -6 dBm
Return Loss
CASCADED PERFORMANCE
HIGH-GAIN, HIGH-LINEARITY MODE (MODE[2:0] = 111)
Gain G (Note 1) 23.0 27 31.5 dB
Noise Figure NF Incl ud i ng off- chi p m atchi ng , TA = + 25°C ( N ote 2) 2.2 2.6 dB
Input Third-Order Intercept Point IIP3 TA = + 25°C (Notes 1, 3) -14 -11.5 dBm
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF
LO
IF
After optional LO/2 500 to 660 MHz
All modes, all active ports, including
2-element matching network, if necessary
420 to 470 MHz
80 to 190 MHz
10 dB
MAX2335
450MHz CDMA/OFDM LNA/Mixer
_______________________________________________________________________________________ 3
Note 1: Specifications at TA= +25°C and +85°C are guaranteed by production test. Specifications at TA= -40°C are guaranteed
by design and characterization.
Note 2: Guaranteed by design and characterization.
Note 3: Two-tone IIP3 tested at f
RF1
= 465.9MHz and f
RF2
= 466.7MHz at -25dBm/tone.
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2335 EV Kit, VCC= +2.9V to +3.3V, f
LNAIN
= f
MIXIN
= 465MHz, fIF= 110MHz, fLO= 2 x (f
MIXIN
+ fIF), 50Ω system impedance,
R
BIAS
= 18kΩ, R
LNA
= 24kΩ, cascaded performance includes 2dB interstage filter loss, TA= -40°C to +85°C, unless otherwise
noted. Typical values are at V
CC
= +2.9V, P
LO_IN
= -7dBm, LOW = 0V, HIGH = +3.0V, TA= +25°C, unless otherwise noted.)
HIGH-GAIN, LOW-LINEARITY MODE (MODE[2:0] = 101)
Gain G (Note 1)
Input Third-Order Intercept Point
IIP3 TA = + 25°C (Notes 1, 3)
LOW-GAIN MODE (MODE[2:0] = 011)
Gain G (Note 1) 5 9
Input Third-Order Intercept Point
IIP3 TA = + 25°C (Notes 1, 3) 3 7
LNA PERFORMANCE
HIGH-GAIN, HIGH-LINEARITY MODE (MODE[2:0] = 111)
Gain G
LNA
15.5 dB
Noise Figure
Including off-chip matching 1.7 dB
Input Third-Order Intercept Point
HIGH-GAIN, LOW-LINEARITY MODE (MODE[2:0] = 101)
Gain G
LNA
14.5 dB
Noise Figure NF
LNA
Including off-chip matching 1.5 dB
Input Third-Order Intercept Point
LOW-GAIN MODE (MODE[2:0] = 011)
Gain G
LNA
-2.7 dB
Noise Figure
Including off-chip matching 5.5 dB
Input Third-Order Intercept Point
MIXER PERFORMANCE
HIGH-GAIN, HIGH-LINEARITY MODE (MODE[2:0] = 111)
Gain
Including off-chip matching 7 dB
Input Third-Order Intercept Point
HIGH-GAIN, LOW-LINEARITY MODE (MODE[2:0] = 101)
Gain
Including off-chip matching 6.7 dB
Input Third-Order Intercept Point
LOW-GAIN MODE (MODE[2:0] = 011)
Gain
Including off-chip matching 7 dB
Input Third-Order Intercept Point
SYMBOL
IIP3
IIP3
G
NF
IIP3
G
NF
IIP3
G
NF
IIP3
Incl ud i ng off- chi p m atchi ng , TA = + 25°C ( N ote 2)
Incl ud i ng off- chi p m atchi ng , TA = + 25°C ( N ote 2)
NF
LNA
LNA
NF
LNA
LNA
MIXER
MIXER
MIXER
MIXER
MIXER
MIXER
MIXER
MIXER
MIXER
MIN
21.0
MAX
30.5
2.5
-15
14
15
MAX2335
450MHz CDMA/OFDM LNA/Mixer
4 _______________________________________________________________________________________
Typical Operating Characteristics
(MAX2335 EV Kit, VCC= +2.9V, f
LNAIN
= 465MHz, fIF= 110MHz, f
LO_IN
= 1150MHz, P
LO_IN
= -7dBm, R
BIAS
= 18kΩ, R
LNA
= 24kΩ,
TA= +25°C, unless otherwise noted.)
SUPPLY CURRENT (HGHL)
vs. TEMPERATURE
MAX2335 toc01
TEMPERATURE (°C)
SUPPLY CURRENT (mA)
603510-15
28
30
32
34
26
-40 85
LNA GAIN VS RF FREQUENCY
MAX2335 toc02
RF FREQUENCY (MHz)
LNA GAIN (dB)
480460440420
-4
0
4
8
12
16
20
-8
400 500
HG
LG
6
4
2
0
400
LG
HG
440420 460 480 500
LNA NOISE FIGURE vs. RF FREQUENCY
MAX2335 toc03
RF FREQUENCY (MHz)
LNA NOISE FIGURE (dB)
5
6
8
7
9
10
-40 10-15 35 60 85
LNA HGHL IIP3 vs. TEMPERATURE
MAX2335 toc04
TEMPERATURE (°C)
LNA HGHL IIP3 (dBm)
R
LNA
= 18kΩ
R
LNA
= 24kΩ
MIXER HGHL IIP3 vs. TEMPERATURE
MAX2335 toc05
TEMPERATURE (°C)
MIXER HGHL IIP3 (dBm)
603510-15
-1
0
1
2
3
4
-2
-40 85
R
BIAS
= 18kΩ
R
BIAS
= 24kΩ
MIXER HG NOISE FIGURE
vs. RF FREQUENCY
MAX2335 toc06
RF FREQUENCY (MHz)
MIXER HG NOISE FIGURE (dB)
480460440420
6.6
6.8
7.0
6.4
400 500
20
15
10
5
0
2.0
1.5
1.0
0.5
0
0 200100 300 400 500
MIXER IF PORT DIFFERENTIAL
PORT IMPEDANCE
MAX2335 toc07
RF FREQUENCY (MHz)
EQUIVALENT PARALLEL RESISTANCE (kΩ)
EQUIVALENT PARALLEL CAPACITANCE (pF)
CAPACITANCE
RESISTANCE