MAXIM MAX2160, MAX2160EBG Technical data

General Description

The MAX2160/EBG tuner ICs are designed for use in Japanese mobile digital TV (ISDB-T single-segment) applications. The devices directly convert UHF band signals to a low-IF using a broadband I/Q downconverter. The operating frequency range extends from 470MHz to 770MHz.

The MAX2160/EBG support both I/Q low-IF interfaces as well as single low-IF interfaces, making the devices universal tuners for various digital demodulator IC implementations.

The MAX2160/EBG include an LNA, RF variable-gain amplifiers, I and Q downconverting mixers, low-IF variablegain amplifiers, and bandpass filters providing in excess of 42dB of image rejection. The parts are capable of operating with either high-side or low-side local oscillator (LO) injection. The MAX2160/EBG’s variable-gain amplifiers provide in excess of 100dB of gain-control range.

The MAX2160/EBG also include fully monolithic VCOs and tank circuits, as well as a complete frequency synthesizer. The devices include a XTAL oscillator as well as a separate TCXO input buffer. The devices operate with XTAL/TCXO oscillators from 13MHz to 26MHz allowing the shared use of a VC-TCXO in cellular handset applications. Additionally, a divider is provided for the XTAL/TCXO oscillator allowing for simple and lowcost interfacing to various channel decoders.

The MAX2160/EBG are specified for operation from

-40°C to +85°C and available in a 40-pin (6mm x 6mm) thin QFN lead-free plastic package with exposed paddle (EP), and in a 3.175mm x 3.175mm lead-free waferlevel package (WLP).

Applications

Cell Phone Mobile TVs

Personal Digital Assistants (PDAs)

Pocket TVs

Features

♦ Low Noise Figure: < 4dB Typical

♦ High Dynamic Range: -98dBm to 0dBm

♦ High-Side or Low-Side LO Injection

♦ Integrated VCO and Tank Circuits

♦ Low LO Phase Noise: Typical -88dBc/Hz at 10kHz

♦ Integrated Frequency Synthesizer

♦ Integrated Bandpass Filters

♦ 52dB Typical Image Rejection

♦ Single +2.7V to +3.3V Supply Voltage

♦ Three Low-Power Modes

♦ Two-Wire, I2C-Compatible Serial Control Interface

♦ Very Small Lead-Free WLP Package

MAX2160/MAX2160EBG

ISDB-T Single-Segment Low-IF Tuners

________________________________________________________________ Maxim Integrated Products 1

Ordering Information

19-0068; Rev 5; 10/09

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.

+Denotes a lead(Pb)-free/RoHS-compliant package. *EP = Exposed paddle.

EVALUATION KIT

AVAILABLE

Pin Configurations/

Functional Diagrams

Pin Configurations/Functional Diagrams continued at end of data sheet.

PART TEMP RANGE PIN-PACKAGE

MAX2160ETL -40°C to +85°C 40 Thi n QFN - E P *

MAX2160ETL+ -40°C to +85°C 40 Thi n QFN - E P *

MAX2160EBG+ -40°C to +85°C W LP

TOP VIEW

VCCCP

CPOUT

TEST

GNDTUNE

VTUNE

GNDVCO

VCCVCO

VCOBYP

VCCMX

PWRDET

N.C.

VCCFLT

N.C.

VCCBB

N.C.

QOUT

GNDBB

IOUT

N.C.

GC2

ENTCXO

N.C.

GNDCP

40 39 38 37 36 35 34 33 32 31

N.C.

TCXO

XTAL

GNDXTAL

VCCXTAL

XTALOUT

VCCDIG

SDA

SCL

LTC

FREQUENCY

SYNTHESIZER

AND CONTROL

INTERFACE LOGIC

11 12 13 14 15 16 17 18 19 20

N.C.

RFIN

VCCBIAS

DIV4

MAX2160

SHDN

ADC

N.C.

TQFN

TANK

PWRDET

GC1

VCCLNA

MAX2160/MAX2160EBG

ISDB-T Single-Segment Low-IF Tuners

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

DC ELECTRICAL CHARACTERISTICS

(MAX2160 EV kit, VCC= +2.7V to +3.3V, V

GC1

= V

GC2

= 0.3V (maximum gain), no RF input signals at RFIN, baseband I/Os are open

circuited and VCO is active with f

= 767.714MHz, registers set according to the recommended default register conditions of

Tables 2–11, T

= -40°C to +85°C, unless otherwise noted. Typical values are at VCC= +2.85V, TA= +25°C, unless otherwise

noted.) (Note 1)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

All VCC_ Pins to GND............................................-0.3V to +3.6V

All Other Pins to GND.................................-0.3V to (V

+ 0.3V)

RFIN, Maximum RF Input Power ....................................+10dBm

ESD Rating...........................................................................±1kV

Short-Circuit Duration

IOUT, QOUT, CPOUT, XTALOUT, PWRDET, SDA,

TEST, LTC, VCOBYP ...........................................................10s

Continuous Power Dissipation (T

= +70°C)

40-Pin Thin QFN (derate 35.7mW/°C above +70°C)....2857mW

WLP (derate 10.8mW/°C above +70°C).........................704mW

Operating Temperature Range ...........................-40°C to +85°C

Junction Temperature......................................................+150°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

CAUTION! ESD SENSITIVE DEVICE

SUPPLY

Supply Voltage 2.7 2.85 3.3 V

PARAMETER CONDITIONS MIN TYP MAX UNITS

Supply Current (See Tables 15 and 16)

ANALOG GAIN-CONTROL INPUTS (GC1, GC2)

Input Voltage Range Maximum gain = 0.3V 0.3 2.7 V

Input Bias Current -15 +15 µA

VCO TUNING VOLTAGE INPUT (VTUNE)

Input Voltage Range 0.4 2.3 V

VTUNE ADC

Resolution 3 bits

Input Voltage Range 0.3 2.4 V

Reference Ladder Trip Point ADC read bits

LOCK TIME CONSTANT OUTPUT (LTC)

Source Current

Receive mode, SHDN = VCC , BBL[1:0] = 00 44 53.5

Standby mode, bit STBY = 1 2 4

Power-down mode, bit PWDN = 1, EPD = 0 5 40 Shutdown mode, SHDN = GND 0 10

Bit LTC = 0 1

Bit LTC = 1 2

110 to 111 VCC - 0.4

101 to 110 1.9

100 to 101 1.7

011 to 100 1.3

010 to 011 0.9

001 to 010 0.6

000 to 001 0.4

µA

MAX2160/MAX2160EBG

ISDB-T Single-Segment Low-IF Tuners

_______________________________________________________________________________________ 3

DC ELECTRICAL CHARACTERISTICS (continued)

(MAX2160 EV kit, VCC= +2.7V to +3.3V, V

GC1

= V

GC2

= 0.3V (maximum gain), no RF input signals at RFIN, baseband I/Os are open

circuited and VCO is active with f

= 767.714MHz, registers set according to the recommended default register conditions of

Tables 2–11, T

= -40°C to +85°C, unless otherwise noted. Typical values are at VCC= +2.85V, TA= +25°C, unless otherwise

noted.) (Note 1)

AC ELECTRICAL CHARACTERISTICS

(MAX2160 EV kit, VCC= +2.7V to +3.3V, fRF= 767.143MHz, fLO= 767.714MHz, fBB= 571kHz, f

XTAL

= 16MHz, V

GC1

= V

GC2

= 0.3V (maximum gain), registers set according to the recommended default register conditions of Tables 2–11, RF input signals as specified, baseband output load as specified, T

= -40°C to +85°C, unless otherwise noted. Typical values are at VCC= +2.85V,

= +25°C, unless otherwise noted.) (Note 1)

PARAMETER CONDITIONS MIN TYP MAX UNITS

SHUTDOWN CONTROL (SHDN)

Input-Logic-Level High 0.7 x V

Input-Logic-Level Low 0.3 x V

2-WIRE SERIAL INPUTS (SCL, SDA)

Clock Frequency 400 kHz

Input-Logic-Level High 0.7 x V

Input-Logic-Level Low 0.3 x V

Input Leakage Current Digital inputs = GND or V

2-WIRE SERIAL OUTPUT (SDA)

Output-Logic-Level Low 0.2 V

±0.1 ±1 µA

PARAMETER CONDITIONS MIN TYP MAX UNITS

MAIN SIGNAL PATH PERFORMANCE

Input Frequency Range 470 770 MHz

Minimum Input Signal 13-segment input -98 dBm

Maximum Voltage Gain CW tone, V

Minimum Voltage Gain CW tone, V

RF Gain-Control Range 0.3V < V

Baseband Gain-Control Range 0.3V < V

In-Band Input IP3 (Note 2) +4 dBm

Out-of-Band Input IP3 (Note 3) +16.7 dBm

Input IP2 (Note 4) +16 dBm

Input P

1dB

Noise Figure V

Image Rejection 42 52 dB

Minimum RF Input Return Loss fRF = 620MHz, 50Ω system 14 dB

LO Leakage at RFIN -100 dBm

IF POWER DETECTOR

Resolution 3 bits

Minimum RF Attack Point Power at RFIN -62 dBm

Maximum RF Attack Point Power at RFIN -48 dBm

Detector Bandwidth 3dB RF bandwidth ±35 MHz

Output Compliance Range 0.3 2.7 V

Response Time C14 = 10nF 0.1 ms

CW tone, V

GC1

= V

GC1

< 2.7V 38 43 dB

GC1

< 2.7V 57 67 dB

GC2

GC1

= V

= 0.3V, TA = +25°C (Note 5) 3.8 5 dB

GC2

= 0.3V, bit MOD = 1 102 dB

GC2

= V

= 2.7V, bit MOD = 0 4 dB

GC2

= V

= 2.7V, bit MOD = 0 0 dBm

GC2

MAX2160/MAX2160EBG

ISDB-T Single-Segment Low-IF Tuners

4 _______________________________________________________________________________________

AC ELECTRICAL CHARACTERISTICS (continued)

(MAX2160 EV kit, VCC= +2.7V to +3.3V, fRF= 767.143MHz, fLO= 767.714MHz, fBB= 571kHz, f

XTAL

= 16MHz, V

GC1

= V

GC2

= 0.3V (maximum gain), registers set according to the recommended default register conditions of Tables 2–11, RF input signals as specified, baseband output load as specified, T

= -40°C to +85°C, unless otherwise noted. Typical values are at VCC= +2.85V,

= +25°C, unless otherwise noted.) (Note 1)

LOW-IF BANDPASS FILTERS

Center Frequency 571 kHz

Frequency Response (Note 5)

Group Delay Variation Up to 1dB bandwidth ±100 ns

BASEBAND OUTPUT CHARACTERISTICS

Nominal Output-Voltage Swing R

I/Q Amplitude Imbalance (Note 6) ±1.5 dB

I/Q Quadrature Phase Imbalance ±2 deg

Output Gain Step Bit MOD transition from 0 to 1 +7 dB

I/Q Output Impedance Real Z

FREQUENCY SYNTHESIZER

RF-Divider Frequency Range 470 770 MHz

RF-Divider Range (N) 829 5374

Reference-Divider Frequency Range

Reference-Divider Range (R) 22 182

Phase-Detector Comparison Frequency

PLL-Referred Phase Noise Floor TA = +25°C, f

Comparison Frequency Spurious Products

Charge-Pump Output Current (Note 5)

Charge-Pump Compliance Range

Charge-Pump Source/Sink Current Matching

PARAMETER CONDITIONS MIN TYP MAX UNITS

±380kHz offset from center frequency -6 -1.5

1.3MHz -36

LOAD

Bit EPB = 1 -52 dBc

Bits CP[1:0] = 00 1.25 1.5 1.75

Bits CP[1:0] = 01 1.65 2.0 2.35

Bits CP[1:0] = 10 2.10 2.5 2.90

Bits CP[1:0] = 11 2.50 3 3.50

±10% variation from current at VTUNE = 1.35V 0.4 2.2 V

VTUNE = 1.35V -10 +10 %

= 10kΩ || 10pF 0.5 V

= 285.714kHz -155 dBc/Hz

COMP

30 Ω

13 26 MHz

1/7 4/7 MHz

P-P

MAX2160/MAX2160EBG

ISDB-T Single-Segment Low-IF Tuners

_______________________________________________________________________________________ 5

AC ELECTRICAL CHARACTERISTICS (continued)

(MAX2160 EV kit, VCC= +2.7V to +3.3V, fRF= 767.143MHz, fLO= 767.714MHz, fBB= 571kHz, f

XTAL

= 16MHz, V

GC1

= V

GC2

= 0.3V (maximum gain), registers set according to the recommended default register conditions of Tables 2–11, RF input signals as specified, baseband output load as specified, T

= -40°C to +85°C, unless otherwise noted. Typical values are at VCC= +2.85V,

= +25°C, unless otherwise noted.) (Note 1)

Note 1: Min and max values are production tested at TA= +25°C and +85°C. Min and max limits at TA= -40°C are guaranteed by

design and characterization. Default register settings are not production tested; load all registers no sooner than 100µs after power-up.

Note 2: In-band IIP3 is measured with two tones at f

- 100kHz and fLO- 200kHz at a power level of -23dBm/tone. GC1 is set for

maximum attenuation (V

GC1

= 2.7V) and GC2 is adjusted to achieve 250mV

P-P

/tone at the I/Q outputs for an input desired

level of -23dBm.

Note 3: Out-of-band IIP3 is measured with two tones at f

+ 6MHz and fRF+ 12MHz at a power level of -15dBm/tone. GC1 is set

for maximum attenuation (V

GC1

= 2.7V) and GC2 is adjusted to achieve 0.5V

P-P

at the I/Q outputs for an input desired level

of -50dBm. fRFis set to 767MHz + 1/7MHz = 767.143MHz.

Note 4: GC1 is set for maximum attenuation (V

GC1

= 2.7V). GC2 is adjusted to give the nominal I/Q output voltage level (0.5V

P-P

)

for a -50dBm desired tone at f

= 550MHz. Two tones, 220MHz and 770MHz at -15dBm/tone, are then injected and the

571kHz IM2 levels are measured (with a 550.571MHz LO) at the I/Q outputs and IP2 is then calculated.

Note 5: Guaranteed by design and characterization. Note 6: Guaranteed and tested at T

= +25°C and +85°C only.

PARAMETER CONDITIONS MIN TYP MAX UNITS

VOLTAGE-CONTROLLED OSCILLATOR AND LO GENERATION

Guaranteed VCO Frequency Range

Guaranteed LO Frequency Range

= -40°C to +85°C 1880 3080 MHz

= -40°C to +85°C 470 770 MHz

Tuning Voltage Range 0.4 2.3 V

= 1kHz -80

OFFSET

= 10kHz -87.5

LO Phase Noise

0.4V < VTUNE < 2.3V, T

= -40°C to +85°C

OFFSET

= 100kHz -107

OFFSET

= 1MHz -128

OFFSET

XTAL OSCILLATOR INPUT (TCXO AND XTAL)

XTAL Oscillator Frequency Range

XTAL Minimum Negative Resistance

Parallel resonance mode crystal 13 26 MHz

16MHz < f

< 18MHz (Note 5) 885 Ω

XTAL

XTAL Nominal Input Capacitance 13.3 pF

TCXO Input Level AC-coupled sine-wave input 0.4 1.5 V

TCXO Minimum Input Impedance 10 kΩ

REFERENCE OSCILLATOR BUFFER OUTPUT (XTALOUT)

Output Frequency Range 1 26 MHz

Output-Buffer Divider Range 1 26

Output-Voltage Swing 0.7 V

Output Load 200 || 4 kΩ || pF

Output Duty Cycle 50 %

Output Impedance 160 Ω

dBc/Hz

P-P

MAX2160/MAX2160EBG

ISDB-T Single-Segment Low-IF Tuners

6 _______________________________________________________________________________________

Typical Operating Characteristics

(MAX2160 EV kit, TQFN package, VCC= +2.85V, default register settings, V

GC1

= V

CG2

= 0.3V, V

IOUT

= V

QOUT

= 0.5V

P-P

= 767.714MHz, TA= +25°C, unless otherwise noted.)

RECEIVE-MODE SUPPLY CURRENT

vs. SUPPLY VOLTAGE

MAX2160 toc01

SUPPLY VOLTAGE (V)

SUPPLY CURRENT (mA)

3.23.13.02.92.8

2.7 3.3

TA = +85°C

TA = +25°C

TA = -40°C

BBL[1:0] = 00

SHUTDOWN-MODE SUPPLY CURRENT

vs. SUPPLY VOLTAGE

MAX2160 toc02

SUPPLY VOLTAGE (V)

SUPPLY CURRENT (µA)

3.23.13.02.92.8

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

2.7 3.3

TA = +85°C

TA = +25°C

TA = -40°C

VOLTAGE GAIN vs. FREQUENCY

MAX2160 toc03

FREQUENCY (MHz)

GAIN (dB)

720670620570520

108

109

110

111

112

113

107

470 770

RELATIVE GC1 GAIN RANGE

vs. GC1 VOLTAGE

MAX2160 toc04

GC1

(V)

RELATIVE GC1 GAIN RANGE (dB)

2.52.01.51.00.5

-40

-30

-20

-10

-50 0 3.0

TA = +25°C

TA = +85°C

FIXED V

GC2

TA = -40°C

RELATIVE GC2 GAIN RANGE

vs. GC2 VOLTAGE

MAX2160 toc05

GC2

(V)

RELATIVE GC2 GAIN RANGE (dB)

2.52.01.51.00.5

-70

-60

-50

-40

-30

-20

-10

-80

03.0

TA = +85°C

TA = -40°C

FIXED V

GC1

TA = +25°C

NOISE FIGURE vs. FREQUENCY

MAX2160 toc06

FREQUENCY (MHz)

NOISE FIGURE (dB)

720670620570520

470 770

TA = +25°C

TA = +85°C

TA = -40°C

NOISE FIGURE vs. INPUT POWER

MAX2160 toc07

INPUT POWER (dBm)

NOISE FIGURE (dB)

-10-20-30-40-50-60-70-80-90

-100 0

CLOSED-LOOP POWER CONTROL

IN-BAND IIP3 vs. INPUT POWER

MAX2160 toc08

INPUT POWER (dBm)

IN-BAND IIP3 (dBm)

-20-40-60-80-100

-80

-60

-40

-20

-100

-120 0

CLOSED-LOOP POWER CONTROL f

= 767.714MHz

= fLO - 100kHz, f2 = fLO - 200kHz

INPUT RETURN LOSS vs. FREQUENCY

MAX2160 toc09

FREQUENCY (MHz)

INPUT RETURN LOSS (dB)

720670620570520

470 770

MAX2160/MAX2160EBG

ISDB-T Single-Segment Low-IF Tuners

_______________________________________________________________________________________ 7

Typical Operating Characteristics (continued)

(MAX2160 EV kit, TQFN package, VCC= +2.85V, default register settings, V

GC1

= V

CG2

= 0.3V, V

IOUT

= V

QOUT

= 0.5V

P-P

= 767.714MHz, TA= +25°C, unless otherwise noted.)

GROUP-DELAY VARIATION

vs. BASEBAND FREQUENCY

MAX2160 toc13

FREQUENCY (kHz)

GROUP-DELAY VARIATION (ns)

900800600 700400 500300

-800

-600

-400

-200

200

400

600

800

1000

-1000 200 1000

IF FILTER 3dB FREQUENCY

vs. TEMPERATURE

MAX2160 toc14

TEMPERATURE (°C)

NORMALIZED 3dB FREQUENCY (%)

806020 400-20

-4

-3

-2

-1

-5

-40 100

LOWER 3dB CUTOFF

NORMALIZED TO TA = +25°C

UPPER 3dB CUTOFF

PHASE NOISE AT 10kHz OFFSET

vs. CHANNEL FREQUENCY

MAX2160 toc16

CHANNEL FREQUENCY (MHz)

PHASE NOISE AT 10kHz OFFSET (dBc/Hz)

720670620570520

-98

-96

-94

-92

-90

-88

-86

-84

-82

-80

-100 470 770

LO-TO-RFIN LEAKAGE vs. FREQUENCY

-105

-106

-107

-108

-109

-110

-111

-112

LO-TO-RFIN LEAKAGE (dBm)

-113

-114

-115 470 770

FREQUENCY (MHz)

-10

MAX2160 toc10

-20

-30

-40

NORMALIZED GAIN (dB)

-50

720670620570520

-60 0 1500

IF FILTER

FREQUENCY RESPONSE

FREQUENCY (kHz)

12501000750500250

-1

MAX2160 toc11

-2

-3

-4

-5

-6

-7

NORMALIZED GAIN (dB)

-8

-9

-10

IF FILTER PASSBAND

FREQUENCY RESPONSE

100 1100

FREQUENCY (kHz)

1000900700 800300 400 500 600200

MAX2160 toc12

MAX2160/MAX2160EBG

ISDB-T Single-Segment Low-IF Tuners

8 _______________________________________________________________________________________

Typical Operating Characteristics (continued)

(MAX2160 EV kit, TQFN package, VCC= +2.85V, default register settings, V

GC1

= V

CG2

= 0.3V, V

IOUT

= V

QOUT

= 0.5V

P-P

= 767.714MHz, TA= +25°C, unless otherwise noted.)

TUNING VOLTAGE vs. VCO FREQUENCY

MAX2160 toc15

VCO FREQUENCY (MHz)

TUNE

(V)

800750700650600550500450400

0.5

1.0

1.5

2.0

2.5

3.0

350 850

VCO 1, SB 0-7 VCO 2, SB 0-7

VCO 3, SB 0-7 VCO 4, SB 0-7

PHASE NOISE vs. OFFSET FREQUENCY

MAX2160 toc17

OFFSET FREQUENCY (kHz)

PHASE NOISE (dBc/Hz)

10010

-140

-130

-120

-110

-100

-90

-80

-70

-60

-50

-150 1 1000

fLO = 575.714MHz (VCO 2, SB1)

POWER-DETECTOR RESPONSE TIME

MAX2160 toc18

A: LOW = -60dBm RF INPUT POWER

HIGH = -20dBm RF INPUT POWER

B: POWER-DETECTOR OUTPUT VOLTAGE,

0.5V/div, CLOSED-LOOP POWER-CONTROL DEFAULT ATTACK POINT

0.01µF LOOP CAPACITOR

200µs/div

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