MAXIM MAX2150 Technical data

General Description
The MAX2150 is a complete wideband direct upconver­sion quadrature modulator IC incorporating a 28-bit sigma-delta fractional-N synthesizer. The device is tar­geted for applications in the 700MHz to 2300MHz fre­quency range.
The super-high-resolution sigma-delta fractional-N syn­thesizer is capable of better than 50mHz resolution when used with a 10MHz reference. Other features: fully differential I/Q modulation inputs, an internal LO buffer, and a 50Ω wideband output driver amplifier.
A standard 3-wire interface is provided for synthesizer programming and overall device configuration. An on­chip low-noise crystal oscillator amplifier is also includ­ed and can be configured as a buffer when an external reference oscillator is used.
The device typically achieves 34dBc of carrier and side­band suppression at a -1dBm output level. The wide­band, internally matched RF output can also be disabled while the synthesizer and 3-wire bus remain powered up for continuous programming.
The device consumes 72mA from a single +3.0V sup­ply and is packaged in an ultra-compact 28-pin QFN package (5mm ✕5mm) with an exposed pad.
Applications
Wireless Broadband
Satellite Uplink
LMDS
Wireless Base Station
Features
Single Voltage Supply (2.7V to 3.6V)
75MHz 3dB I/Q Input Bandwidth
Wideband 50Ω RF Output: 700MHz to 2300MHz
Ultra-Fine Frequency Resolution: 100mHz
High Reference Frequency for Fast-Switching
Applications
Ultra-Low Phase Noise
Low Spurious and Reference Emissions
-1dBm RMS Output Power
60dB RF Muting Control
34dBc Typical Carrier Suppression
34dBc Typical Sideband Suppression
Software- and Hardware-Controlled Shutdown
Modes
MAX2150
Wideband I/Q Modulator with Sigma-Delta
Fractional-N Synthesizer
________________________________________________________________
Maxim Integrated Products
1
Pin Configuration/
Functional Diagram
Ordering Information
19-2389; Rev 4; 6/08
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
PART TEMP RANGE PIN-PACKAGE
MAX2150ETI -40°C to +85°C 28 TQFN-EP*
MAX2150ETI+ -40°C to +85°C 28 TQFN-EP*
*
EP = Exposed paddle.
+
Denotes lead-free package.
VCC_RF
I+ Q+I- Q- BUFOUTBUFEN
27
28
TXEN
1
VCC_PA
2
RFOUT
N.C.
N.C.
LOCK
VCC_SD
3
4
5
6
7
0
PROGRAMMING
AND CONTROL
9
8
CLK DATA SYNEN
26
90
∑ Δ – MOD
10
EN
25
MAX2150
11
SHDN
QFN
24
12
OSCIN VCC_XTAL
23
22
21
20
19
18
1/N
PFD
1/R
13
17
16
CHP
15
14
LO+
LO-
VCC_LO
VCC_D
VCC_A
CHP
VCC_CHP
MAX2150
Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
VCCto GND...........................................................-0.3V to +6.0V
RF Signals: LO+, LO-, OSCIN ........................................+10dBm
I+ to I-, Q+ to Q-.......................................................................2V
LO+, LO-, I+, I-, Q+, Q-, BUFEN, TXEN, CLK, DATA,
EN, SYNEN, OSCIN, OSCOUT, BUFOUT, CHP, SHDN, LOCK, V
CC
_CP to GND..............-0.3V to (V
CC
+ 0.3V)
Digital Input Current .........................................................±10mA
Short-Circuit Duration RFOUT, BUFOUT, OSCOUT,
Lock, CHP...........................................................................10s
Continuous Power Dissipation
28-Pin TQFN (T
A
= +70°C)..................................................2W
(derate 28.5mW/°C above +70°C)
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature Range ..........................................+150°C
Storage Temperature.........................................-65°C to +150°C
Lead Temperature (soldering 10s) ..................................+300°C
DC ELECTRICAL CHARACTERISTICS
(MAX2150 EV kit. VCC= +2.7V to +3.6V, GND = 0V, SHDN = PLLEN = TXEN = high, BUFEN= low. No AC input signals. RFOUT and BUFOUT output ports are terminated in 50Ω. T
A
= -40°C to +85°C. Typical values are at VCC= +3V, TA= +25°C, unless otherwise
noted.) (Note 1)
CAUTION! ESD SENSITIVE DEVICE
PARAMETER CONDITIONS MIN TYP MAX UNITS
SUPPLY
Supply Voltage 2.7 3 3.6 V
TX mode, SHDN = PLLEN = TXEN = high BUFEN = low
72 107
Supply Current
LO Buffer Supply Current Additional current in all modes for BUFEN = high 3.3 5.5 mA
Shutdown Supply Current
CONTROL INPUT/OUTPUTS (SHDN, TXEN, SYNEN, BUFEN)
Input Logic High 2V
Input Logic Low 0.5 V
Input Logic High Current A
Input Logic Low Current -1 µA
Lock Detect High (Locked) 2 V
Lock D etect Low ( U nl ocked ) 0.5 V
Power-Up Time MOD mode 25 µs
Power-Down Time MOD mode 1 µs
3-WIRE CONTROL INPUT (CLK, DATA, EN)
Input Logic High
Input Logic Low 0.5 V
Input Logic High Current A
Input Logic Low Current -1 µA
SYNTH mode, SHDN = PLLEN = high, TXEN = BUFEN = low
MOD mode, SHDN = TXEN = high, SYNEN = BUFEN = low
HW_SHDN mode, SHDN = low 0.3 600 SW_SHDN mode, PWDN bit at logic low 35 600
V
CC
0.5
25 38
46 69
-
mA
µA
V
MAX2150
Wideband I/Q Modulator with Sigma-Delta
Fractional-N Synthesizer
_______________________________________________________________________________________ 3
AC ELECTRICAL CHARACTERISTICS
(MAX2150 EV kit. VCC= +2.7V to +3.6V, SHDN = PLLEN = TXEN = high, BUFEN =low. Input I/Q signals: F
I/Q
= 500kHz, V
I/Q
= 1V
P-P
. I+, Q+ single-ended input, driven from AC-coupled source. I-, Q- single-ended inputs are AC-coupled to GND. RFOUT and BUFOUT output ports are terminated in 50Ω loads. f
LO
=1750MHz, PLO= -10dBm, typical values are at VCC= +3V, TA= +25°C, unless other-
wise noted.) (Note 1)
MODULATION INPUT
I/Q Input Bandwidth
I/Q Differential Input Level
I/Q DC Input Resistance 200 kΩ
I/Q Common-Mode Input Range (Note 2) 1.5 1.6 1.7 V
RF OUTPUT
Frequency Range 700 2300 MHz
Output Power
Output 1dB Compression Point 1 dBm
Output IP3 14 dBm
Carrier Suppression fRF = 1750MHz 34 dBc
Sideband Suppression fLO - f
RF Output Noise Floor f
Output Return Loss (Note 3) -9 dB
LO INPUT/OUTPUT
Frequency Range 700 2300 MHz
LO Input Power (Note 2) -12 -10 -7 dBm
LO Input Return Loss fLO =2000MHz -15 dB
LO Buffer Output Level BUFEN = high (Note 2) -14 -9.5 dBm
SIGMA-DELTA FRACTIONAL-N SYNTHESIZER
SYSTEM REQUIREMENTS
Frequency Range
Phase-Detector Input-Referred Phase Noise Floor
In-Loop Spurious Emissions
MAIN DIVIDER AND PHASE DETECTOR
Minimum Fractional-N Step Size
Phase-Detector Comparison Frequency
Maximum N Division 251
Minimum N Division 35
PARAMETER CONDITIONS MIN TYP MAX UNITS
BW (-1dB) 26
BW (-3dB) 75
Assumes a sine-wave input to achieve the RFOUT output power specified below
TXEN = high, fRF = 1750MHz -7 -1
TXEN = low, f
(Note 2)
f
f = CPX = 1 (Note 5)
= 1750MHz -60
RF
, fRF = 1750MHz 25 34 dBc
I/Q
> 40MHz (Note 2) -148 -143 dBm/Hz
OFFSET
700 2300 MHz
= f
COMP
= 1740.005MHz, f
LO
= 20MHz, CP0 = CP1 = CPX = 1 (Note 4) -138 dBc/Hz
REF
= f
COMP
= 20MHz, CP0 = CP1
REF
1V
-40 dBc
f
/
COMP
28
2
20 30 MHz
MHz
dBm
P-P
MAX2150
Wideband I/Q Modulator with Sigma-Delta Fractional-N Synthesizer
4 _______________________________________________________________________________________
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2150 EV kit. VCC= +2.7V to +3.6V, SHDN = PLLEN = TXEN = high, BUFEN = low. Input I/Q signals: F
I/Q
= 500kHz, V
I/Q
= 1V
P-P
. I+, Q+ single-ended input, driven from AC-coupled source. I-, Q- single-ended inputs are AC-coupled to GND. RFOUT and BUFOUT output ports are terminated in 50Ω loads. f
LO
=1750MHz, PLO= -10dBm, typical values are at VCC= +3V, TA= +25°C, unless other-
wise noted.) (Note 1)
Note 1: Parameters are guaranteed by production testing at +25°C and +85°C. Minimum and maximum values over the tempera-
ture and supply voltage range are guaranteed by design and characterization.
Note 2: Guaranteed by design and characterization. Note 3: Measured with MAX2150 EV kit. Note 4: Measured with an on-chip crystal oscillator. Note 5: In-loop spurious emissions occur when synthesizing a frequency at an integer multiple of the comparison frequency with
fractional offset within the PLL loop BW.
Note 6: If an on-chip oscillator is used, a fundamental tone crystal is needed. Note 7: Minimum and maximum values at CPX = 1 are guaranteed by production testing. Values at CPX = 0 are guaranteed by
design and characterization.
REFERENCE OSCILLATOR AND DIVIDER
Input Frequency Range 10 50 MHz
AC-Coupled Input Sensitivity AC-coupled, single ended (Note 2) 0.4 2.3 V
Reference Division Ratio (Notes 2, 6) 1 4
CHARGE-PUMP OUTPUT
Charge-Pump Current (Note 7)
Charge-Pump Voltage Compliance
PARAMETER CONDITIONS MIN TYP MAX UNITS
CP1, CP0 = 00
CP1, CP0 = 01
CP1, CP0 = 10
CP1, CP0 = 11
Sink/source currents match within ±5% 0.5
CPX = 0 0.12 0.17 0.22
CPX = 1 0.23 0.34 0.44
CPX = 0 0.23 0.35 0.46
CPX = 1 0.47 0.67 0.88
CPX = 0 0.36 0.52 0.68
CPX = 1 0.70 1.00 1.30
CPX = 0 0.48 0.69 0.90
CPX = 1 0.91 1.31 1.70
VCC -
0.5
P-P
mA
V
MAX2150
Wideband I/Q Modulator with Sigma-Delta
Fractional-N Synthesizer
_______________________________________________________________________________________
5
Typical Operating Characteristics
(MAX2150 EV kit. VCC= +3V, SHDN = PLLEN = TXEN = high, BUFEN = low. Input I/Q signals: F
I/Q
= 500kHz, V
I/Q
= 1V
P-P
. I+, Q+ sin­gle-ended input, driven from AC-coupled source. I-, Q- single-ended inputs are AC-coupled to GND. RFOUT and BUFOUT output ports are terminated in 50Ω loads. f
LO
=1750MHz, PLO= -10dBm, TA= +25°C, unless otherwise noted.)
SUPPLY CURRENT
vs. SUPPLY VOLTAGE
100
TX MODE
80
60
40
SUPPLY CURRENT (mA)
20
0
2.7 3.6
+85°C
+25°C
-40°C
SUPPLY VOLTAGE (V)
MODULATION OUTPUT POWER
vs. FREQUENCY
4
TXEN = HIGH
2
MAX2150 toc01
0
-2 +85°C
-4
-6
-8
MODULATION OUTPUT POWER (dBm)
-10
-12
3.33.0
700 2300
-40°C
+25°C
FREQUENCY (MHz)
MAX2150 toc02
190015001100
CARRIER AND SIDEBAND
OUTPUT POWER vs. LO POWER
-1.0
-1.1
-1.2
-1.3
-1.4
-1.5
-1.6
OUTPUT POWER (dBm)
-1.7
-1.8
-1.9
-2.0 712
LO POWER (dBm)
11108 9
MAX2150 toc04
CARRIER AND SIDEBAND SUPPRESSIONS (dB)
SUPPRESSIONS vs. LO POWER
38
37
36
SIDEBAND SUPPRESSION
35
34
CARRIER SUPPRESSION
33
32
712
LO POWER (dBm)
111098
MAX2150 toc05
MODULATION OUTPUT POWER
vs. FREQUENCY
-55 TXEN = LOW
-58
-61
-64
-67
MODULATION OUTPUT POWER (dBm)
-70
700 2300
-40°C
+25°C
+85°C
FREQUENCY (MHz)
MODULATOR OUTPUT POWER
vs. I/Q INPUT LEVEL
4
0
-4
-8
-12
-16
MODULATOR OUTPUT POWER (dBm)
-20
-24
-40°C
+25°C
+85°C
0
I/Q INPUT LEVEL (mV)
190015001100
140012001000800600400200
MAX2150 toc03
MAX2150 toc06
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