Maxim MAX2106UCM Datasheet

General Description
The MAX2106 low-cost, direct-conversion tuner IC is designed for use in digital direct-broadcast satellite (DBS) television set-top box units and is a pin-for-pin upgrade for the MAX2104. Its direct-conversion archi­tecture reduces system cost compared to devices with IF-based architectures. The MAX2106 directly tunes L­band signals to baseband using a broadband I/Q downconverter. The operating frequency range spans 925MHz to 2175MHz.
The IC includes a low-noise amplifier (LNA) with gain control, I and Q downconverting mixers, lowpass filters with gain and frequency control, a local oscillator (LO) buffer with a 90° quadrature network, and a charge­pump-based phase-locked loop (PLL) for frequency control. The MAX2106 has an on-chip LO, requiring only an external varactor-tuned LC tank for operation. The LO’s output drives the internal quadrature genera­tor and has a buffer amplifier to drive off-chip circuitry. The MAX2106 comes in a 48-pin thin quad flat-pack package with exposed paddle (EP).
Applications
Advantages Over MAX2104
Improved Front End Achieves 10.2dB NF at 1550MHz
Higher Input IIP3: 11.5dBm at 1550MHz
Reduced Spurious Downconversion Products
Capable of Using an External Synthesizer
Features
Drop-In Replacement for MAX2104 Designs:
Requires Only Minor Software Upgrade and Two External Resistor Value Changes
Complete Low-Cost Solution for DBS Direct
Downconversion
High Level of Integration Minimizes Component
Count
1MBaud to 45MBaud Operation
Selectable LO Buffer
+5V Single-Supply Operation
925MHz to 2175MHz Input Frequency Range
On-Chip Quadrature Generator, Dual-Modulus
Prescaler (/32, /33)
On-Chip Crystal Oscillator Amplifier
PLL Phase Detector with Gain-Controlled Charge
Pump
Input Levels: -25dBm to -68dBm per Carrier
Over 50dB Gain Control Range
Noise Figure = 10.2dB; IIP3 = +11.5dBm
(at 1550MHz)
Automatic Baseband Offset Correction
MAX2106
DBS Direct Downconverter
________________________________________________________________ Maxim Integrated Products 1
19-1627; Rev 2; 6/03
Functional Diagram appears at end of data sheet.
Ordering Information
Pin Configuration
*Exposed paddle.
48 TQFP-EP*
PIN-PACKAGETEMP RANGE
0°C to +85°CMAX2106UCM
PART
PLLIN­PLLIN+ MOD­MOD+ LODIVSEL IOUT+ IOUT­V
CC
QOUT+ QOUT­RFBAND FLCLK
V
CC
CFLT
XTL-
XTL+
GND
V
CC
RFIN-
RFIN+
GND GND
QDC-
QDC+
1
2
3
4
5
6
7
8
9
10
11
12
1314151617181920212223
24
4847464544434241403938
37
36
35
34
33
32
31
30
29
28
27
26
25
IDC-
IDC+
LOBUFSEL
GND
RFOUT
CPG1
V
CC
XTLOUT
CPG2
GC1
GC2
INSEL
CPFBGND
V
CC
TANK+
VRLO
TANK-
GND
GND
VCCLOBUF-/TPSOUT-
LOBUF+/FPSOUT+
TQFP
MAX2106
TOP VIEW
U.S. DSS Set-Top Receivers
European DVB-Compliant Systems
Cellular Base Stations
Wireless Local Loop
Broadband Systems
LMDS
Professional Receivers
VSAT
Microwave Links
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
MAX2106
DBS Direct Downconverter
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(VCC= +4.75V to +5.25V, VFB= +2.4V, C
IOUT_
= C
QOUT_
= 10pF, ƒ
FLCLK
= 2MHz, RFIN_ = unconnected, R
IOUT_
= R
QOUT_
= 10kΩ,
V
LOBUFSEL
= 0.5V, V
R
FBAND
= V
INSEL
= V
CPG1
= V
CPG2
= +2.4V, V
PLLIN+
= V
MOD+
= +1.3V, V
PLLIN-
= V
MOD-
= +1.1V, TA= +25°C,
unless otherwise noted. Typical values are at V
CC
= +5V, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
VCCto GND..............................................................-0.3V to +7V
All Other Pins to GND................................-0.3V to (V
CC
+ 0.3V)
RFIN+ to RFIN-, TANK+ to TANK-,
IDC+ to IDC-, QDC+ to QDC- .........................................±2V
IOUT_, QOUT_ to GND Short-Circuit Duration .......................10s
LOBUF+/PSOUT+, LOBUF-/PSOUT- Short-Circuit Duration..10s Continuous Current (any pin other than V
CC
or GND)........20mA
Continuous Power Dissipation (T
A
= +70°C)
48-Pin TQFP-EP (derate 27mW/°C above +70°C) ..........1.5W
Operating Temperature ..........................................0°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
XTLOUT Output DC Voltage 1.9 V
RFBAND Input Current -200 200 µA
1.44 1.8 2.16
mA
0.48 0.6 0.72
V
CPG1
2.4V, V
CPG2
2.4V
V
CPG1
2.4V, V
CPG2
0.5V
0.24 0.3 0.36V
CPG1
0.5V, V
CPG2
2.4V
Operating Supply Current I
CC
195 275
mA
PARAMETER SYMBOL MIN TYP MAX UNITS
Input Current I
IN
-15 10 µA
Input Voltage Low V
IL
0.5 V
Input Voltage High V
IH
2.4 V
FLCLK Input Voltage High 1.85 V
FLCLK Input Voltage Low 1.45 V
FLCLK Input Current (Note 1) -1 1 µA
Operating Supply Voltage V
CC
4.75 5.25 V
Common-Mode Input Voltage V
CMI
1.08 1.2 1.32 V
Input Voltage Low -100 mV
Input Voltage High 100 mV
Input Current (Note 1)
-5 5
µA
Common-Mode Output Voltage V
CMO
2.16 2.4 2.64 V
Output Voltage Low (Note 2) -150 mV
Output Voltage High (Note 2) 150 mV
Prescaler Ratio
Reference Divider Ratio 88
Charge-Pump Output High Measured at FB
0.08 0.1 0.12
CONDITIONS
Referenced to V
CMI
Referenced to V
CMI
R
SOURCE
= 50k, V
FLCLK
= 1.65V
Referenced to V
CMO
, LOBUFSEL 0.5V
Referenced to V
CMO
, LOBUFSEL 0.5V
V
CPG1
0.5V, V
CPG2
0.5V
(V
MOD+-VMOD-
) 200mV, LOBUFSEL 0.5V 32 32
LOBUFSEL 2.4V, LODIVSEL 0.5V
LOBUFSEL 2.4V, LODIVSEL 2.4V
(V
MOD+-VMOD-
) -200mV, LOBUFSEL 0.5V
22
11
33 33
FREQUENCY SYNTHESIZER/LO BUFFER
DIFFERENTIAL DIGITAL OUTPUTS (LOBUF+/PSOUT+, LOBUF-/PSOUT-)
DIFFERENTIAL DIGITAL INPUTS (MOD+, MOD-, PLLIN+, PLLIN-)
SLEW-RATE-LIMITED DIGITAL INPUT (f
LCLK
)
STANDARD DIGITAL INPUTS (INSEL, CPG1, CPG2, LOBUFSEL, LODIVSEL)
MAX2106
DBS Direct Downconverter
_______________________________________________________________________________________ 3
DC ELECTRICAL CHARACTERISTICS (continued)
(VCC= +4.75V to +5.25V, VFB= +2.4V, C
IOUT_
= C
QOUT_
= 10pF, ƒ
FLCLK
= 2MHz, RFIN_ = unconnected, R
IOUT_
= R
QOUT_
= 10kΩ,
V
LOBUFSEL
= 0.5V, V
R
FBAND
= V
INSEL
= V
CPG1
= V
CPG2
= +2.4V, V
PLLIN+
= V
MOD+
= +1.3V, V
PLLIN-
= V
MOD-
= +1.1V, TA= +25°C,
unless otherwise noted. Typical values are at V
CC
= +5V, unless otherwise noted.)
AC ELECTRICAL CHARACTERISTICS
(IC driven single-ended with RFIN- AC-terminated in 75to GND, V
CC
= +4.75V to +5.25V, V
IOUT_
= V
QOUT_
= 0.59Vp-p,
C
IOUT_
= C
QOUT_
= 10pF, ƒ
LCLK
= 2MHz, R
IOUT_
= R
QOUT_
= 10k, V
LOBUFSEL
= 0.5V, V
RFBAND
= V
INSEL
= V
CPG1
= V
CPG2
= +2.4V,
V
PLLIN+
= V
MOD+
= +1.3V, V
PLLIN-
= V
MOD-
= +1.1V, TA= +25°C, unless otherwise noted. Typical values are at VCC= +5V.)
V
CPG1
0.5V, V
CPG2
0.5V
V
CPG1
0.5V, V
CPG2
2.4V
CONDITIONS
-0.12 -0.1 -0.08
Charge-Pump Output Low Measured at FB
-0.36 -0.3 -0.24
UNITSMIN TYP MAXSYMBOLPARAMETER
V
CPG1
2.4V, V
CPG2
0.5V
V
CPG1
2.4V, V
CPG2
2.4V
-0.72 -0.6 -0.48
mA
-2.16 -1.8 -1.44
V
GC_
= 1V to 4V -50 50I
GC_
Input Current µA
Charge-Pump Output Current Matching Positive to Negative
%Measured at FB -5 5
Charge-Pump Output Leakage nAMeasured at FB -25 25
Offset Voltage (Note 1) mV
Differential Output Voltage Swing
Vp-pRL= 2kdifferential 1
Common-Mode Output Voltage (Note 1)
V0.65 0.85
-50 50
Charge-Pump Output Current Drive (Note 1)
µAMeasured at CP 100
f
RFIN_
RFIN_ Input Frequency Range MHz
CONDITIONS
NFNoise Figure
dB
f
RFIN
_
= 1550MHz,
V
GC1
= 1V, V
GC2
adjusted 0.59Vp-p baseband level
10.2
UNITSMIN TYP MAXSYMBOLPARAMETER
Inferred by quadrature gain and phase-error test
925 2175
dBm
RFIN_ Input Power for 0.59Vp-p Baseband Levels
dBm-25
Single carrier
-68
IP3
RFIN_
RFIN_ Input Third-Order Intercept Point (Note 3)
dBm
P
RFIN_
= -25dBm
per tone
10.5
10.5
11.5
IP2
RFIN_
RFIN_ Input Second-Order Intercept (Note 4)
dBm
P
RFIN_
= -25dBm per tone,
f
LO
= 951MHz
17
P1
dBOUT
Output-Referred 1dB Compression Point (Note 5)
dBV
P
RFIN_
= -40dBm,
signals within filter bandwidth
2
ANALOG CONTROL INPUTS (GC1, GC2)
BASEBAND OUTPUTS (IOUT+, IOUT-, QOUT+, QOUT-)
V
GC1
= V
GC2
= +4V (min gain)
V
GC1
= V
GC2
= +1V (max gain) fLO= 2175MHz fLO= 1550MHz fLO= 950MHz
dBm
P
RFIN_
= -65dBm
per tone
-30
-29
-26
fLO= 2175MHz fLO= 1550MHz fLO= 950MHz
RF FRONT END
P
RFIN_
= -65dBm
dB44.8P
RFIN_
= -25dBm
MAX2106
DBS Direct Downconverter
4 _______________________________________________________________________________________
AC ELECTRICAL CHARACTERISTICS (continued)
(R
FIN
+ IC driven single-ended with RFIN- AC-terminated in 75to GND, V
CC
= +4.75V to +5.25V, V
IOUT_
= V
QOUT_
= 0.59Vp-p,
C
IOUT_
= C
QOUT_
= 10pF, f
LCLK
= 2MHz, R
IOUT_
= R
QOUT_
= 10k, V
LOBUFSEL
= 0.5V, V
RFBAND
= V
INSEL
= V
CPG1
= V
CPG2
= +2.4V,
V
PLLIN+
= V
MOD+
= +1.3V, V
PLLIN-
= V
MOD-
= +1.1V, TA= +25°C, unless otherwise noted. Typical values are at VCC= +5V.)
12.5f = 925MHz
dBRFOUT Noise Figure (Note 10)
5
7
9f = 925MHz
dBm
RFOUT Output Third-Order Intercept Point (Note 10)
1.0f = 1550MHz
2.0f = 2175MHz
0.5f = 925MHz
dBRFIN+ to RFOUT Gain (Note 10)
degreesQuadrature Phase Error
Includes effects from baseband filters, measured at 125kHz baseband
4
dBQuadrature Gain Error
Includes effects from baseband filters, measured at 125kHz baseband
f
FLCLK
= 2.0625MHz, fC = 31.4MHz
f
FLCLK
= 1.25MHz, fC = 19.3MHz
f
FLCLK
= 0.5MHz, fC = 8MHz
-0.5 0.5
Deviation from ideal 7th order, Butterworth, up to 0.7 × f
C
dB
Baseband Frequency Response (Note 1)
750C
IDC_
= C
QDC_
= 0.22µF Hz
Baseband Highpass -3dB Frequency (Note 1)
23
f
IN_BAND
= 100Hz to 22.5MHz,
f
OUT_BAND
= 67.5MHz to 112.5MHz
1.2
dB
Ratio of In-Filter-Band to Out-of-Filter­Band Noise
R
FIN
+ Return Loss (Note 6)
+13
dB
10 10
%
LPF -3dB Cutoff-Frequency Accuracy (Note 1)
-10 10
-5.5 5.5
f
RFIN_
= 925MHz, Z
SOURCE
= 75
833Controlled by FLCLK signal MHz
LPF -3dB Cutoff-Frequency Range (Note 1)
12925MHz < f < 2175MHz, Z
LOAD
= 75 dBRFOUT Return Loss (Notes 6, 10)
11f = 2175MHz
11f = 1550MHz
f = 2175MHz
f = 1550MHz
50IOUT_, QOUT_ Output Real Impedance (Note 1)
PARAMETER SYMBOL MIN TYP MAX UNITSCONDITIONS
+14f
RFIN_
= 2175MHz, Z
SOURCE
= 75
41.5
LO 2nd Harmonic Rejection (Note 7) 32
dB
Average level of V
IOUT_
, VQOUT_
Average level of V
IOUT_
, VQOUT_LO Half Harmonic Rejection (Note 8) dB
-66Measured at R
FIN
+LO Leakage Power (Notes 6, 9) dBm
RFOUT PORT (LOOPTHROUGH)
BASEBAND CIRCUITS
MAX2106
DBS Direct Downconverter
_______________________________________________________________________________________ 5
Note 1: Minimum and maximum values are guaranteed by design and characterization over supply voltage. Note 2 Driving differential load of 10k|| 15pF. Note 3: Two signals are applied to RFIN_ at f
LO
- 100MHz and fLO- 199MHz. V
GC2
= 1V, V
GC1
is set so that the baseband out-
puts are at 590mVp-p. IM products are measured at baseband outputs but are referred to RF inputs.
Note 4: Two signals are applied to RFIN_ at 1200MHz and 2150MHz. V
GC2
= 1V, V
GC1
is set so that the baseband outputs are at
590mVp-p. IM products are measured at baseband outputs but are referred to RF inputs.
Note 5: P
RFIN_
= -40dBm so that front-end IM contributions are minimized.
Note 6: Using L64733/L64734 demo board from LSI Logic. Note 7: Downconverted level, in dBc, of carrier present at f
LO
× 2, fLO= 1180MHz, f
VCO
= 590MHz, V
RFBAND
= unconnected (see
histogram plots).
Note 8: Downconverted level, in dBc, of carrier present at f
O
/ 2, fLO= 2175MHz, f
VCO
= 1087.5MHz, V
RFBAND
= 2.4V.
Note 9: Leakage is dominated by board parasitics. Note 10: V
CPG1
= V
CPG2
= V
RFBAND
= V
INSEL
= 0.5V, ƒ
LCLK
= 0.5MHz.
Note 11: Guaranteed by design and characterization over supply and temperature. Note 12: Measured at tuned frequency with PLL locked. PLL loop bandwidth = 3kHz. All phase noise measurements assume tank
components have a Q > 50.
AC ELECTRICAL CHARACTERISTICS (continued)
(IC driven single-ended with RFIN- AC-terminated in 75to GND, V
CC
= +4.75V to +5.25V, V
IOUT_
= V
QOUT_
= 0.59Vp-p,
C
IOUT_
= C
QOUT_
= 10pF, ƒ
LCLK
= 2MHz, R
IOUT_
= R
QOUT_
= 10k, V
LOBUFSEL
= 0.5V, V
RFBAND
= V
INSEL
= V
CPG1
= V
CPG2
= +2.4V,
V
PLLIN+
= V
MOD+
= +1.3V, V
PLLIN-
= V
MOD-
= +1.1V, TA= +25°C, unless otherwise noted. Typical values are at VCC= +5V.)
LOCAL OSCILLATOR
SYNTHESIZER
-96
PARAMETER SYMBOL MIN TYP MAX UNITS
At 100kHz offset, fLO= 2175MHz
dBc/HzLO Phase Noise (Notes 6, 12)
-75At 10kHz offset, fLO= 2175MHz
58
0Figure 1
f
RFIN
= 2175MHz dBRFIN+ to LO Input Isolation (Note 9)
-60
590 1180 MHzLO Tuning Range (Note 11)
ns
4 7.26 MHzCrystal Frequency Range (Note 1)
0.75 1 1.5Load = 10pF ||10k, f
XTLOUT
= 6MHz Vp-pXTLOUT Output Voltage Swing
At 1kHz offset, fLO= 2175MHz
MOD+, MOD- Hold Time (Note 1) t
HM
7Figure 1
CONDITIONS
nsMOD+, MOD- Setup Time (Note 1) t
SUM
70
V
LOBUFSEL
2.4V,
fLO= 925 MHz + 2175MHz
V
RMS
LO Buffer Output Voltage (Note 1)
SYNTHESIZER
LOCAL OSCILLATOR
MAX2106
DBS Direct Downconverter
6 _______________________________________________________________________________________
NAME FUNCTIONPIN
Pin Description
2 CFLT
External Bypass for Internal Bias. Bypass this pin with a 0.1µF ceramic chip capacitor to GND.
3 XTL- Inverting Input to Crystal Oscillator. Consult crystal manufacturer for circuit loading requirements.
4 XTL+ Noninverting Input to Crystal Oscillator. Consult crystal manufacturer for circuit loading requirements.
5, 9, 10, 16,
40, 41, 46
GND
Ground. Connect each of these pins to a solid ground plane. Use multiple vias to reduce inductance where possible.
7 RFIN- RF Inverting Input. Bypass RFIN- with 47pF capacitor in series with a 75resistor to GND.
8 RFIN+ RF Noninverting Input. Connect to 75source with a 47pF ceramic chip capacitor.
11 QDC- Baseband Offset Correction. Connect a 0.22µF ceramic chip capacitor from QDC- to QDC+ (pin 12).
12 QDC+ Baseband Offset Correction. Connect a 0.22µF ceramic chip capacitor from QDC+ to QDC- (pin 11).
13 IDC- Baseband Offset Correction. Connect a 0.22µF ceramic chip capacitor from IDC- to IDC+ (pin 14).
14 IDC+ Baseband Offset Correction. Connect a 0.22µF ceramic chip capacitor from IDC+ to IDC- (pin 13).
17 RFOUT Buffered RF Output. Enabled when INSEL is low.
18 CPG1
Charge-Pump Gain Select. High-impedance digital input. Sets the charge-pump output scaling. See DC Electrical Characteristics for available gain settings.
20 XTLOUT Buffered Crystal Oscillator Output
21 CPG2
Charge-Pump Gain Select. High-impedance digital input. Sets the charge-pump output scaling. See DC Electrical Characteristics for available gain settings.
22 GC1
Gain Control Input for RF Front End. High-impedance analog input, with an input range of +1V to +4V. See AC Electrical Characteristics for transfer function.
23 GC2
Gain Control Input for Baseband Signals. High-impedance analog input, with an input range of +1V to +4V. See AC Electrical Characteristics for transfer function.
24 INSEL
Loopthrough Mode Enable. High-impedance digital input. Drive low to enable the RFOUT buffer and disable the LO converters. Drive high for normal tuner operation.
25 FLCLK
Baseband Filter Cutoff Adjust. Connect to a slew-rate-limited clock source. See AC Electrical Characteristics for transfer function.
26 RFBAND
RF Input Band Select Input. Drive high to enable 1680 MHz to 2175 MHz band. Leave unconnected to enable 1180 MHz to 1680 MHz band. Connect to GND to enable 925 MHz to 1180 MHz band.
27 QOUT- Baseband Quadrature Output. Connect to inverting input of high-speed ADC.
28 QOUT+ Baseband Quadrature Output. Connect to noninverting input of high-speed ADC.
30 IOUT- Baseband In-Phase Output. Connect to inverting input of high-speed ADC.
31 IOUT+ Baseband In-Phase Output. Connect to noninverting input of high-speed ADC.
32 LODIVSEL
LO Buffer Divider Ratio Input. Drive high to enable divide-by-one LO buffer output. Connect to GND to enable divide-by-two buffer output.
1, 6, 19,
29, 39, 45
V
CC
VCCPower-Supply Input. Connect each pin to a +5V ±5% low-noise supply. Bypass each VCCpin to the nearest GND with a ceramic chip capacitor.
15 LOBUFSEL
Local Oscillator Buffer Select. Connect to GND to select DIV32/33 prescaler output; connect VCCto DIV1 to select DIV2 LO buffer output.
33 MOD+
PECL Modulus Control. A PECL high on MOD+ sets the dual-modulus prescaler to divide by 32. A PECL logic low sets the divide ratio to 33. Drive with a differential PECL signal in conjunction with MOD- (pin 34).
MAX2106
DBS Direct Downconverter
_______________________________________________________________________________________ 7
Pin Description (continued)
NAME FUNCTIONPIN
34 MOD-
PECL Modulus Control. A PECL low on MOD- sets the dual-modulus prescaler to divide by 32. A PECL logic high sets the divide ratio to 33. Drive with a differential PECL signal in conjunction with MOD+ (pin 33).
35 PLLIN+ PECL Phase-Locked Loop Input. Drive with a differential PECL signal in conjunction with PLLIN- (pin 36).
37
LOBUF+/
PSOUT+
LOBUFSEL = GND: PECL Prescaler Output. Differential output of the dual-modulus prescaler. Used in conjunction with PSOUT-. Requires PECL-compatible termination. LOBUFSEL=V
CC
: 50LO buffer
noninverting output.
36 PLLIN- PECL Phase-Locked Loop Input. Drive with a differential PECL signal in conjunction with PLLIN+ (pin 35)
42 TANK- LO Tank Oscillator Input. Connect to an external LC tank with varactor tuning.
38
LOBUF-/
PSOUT-
LOBUFSEL = GND: PECL Prescaler Output. Differential output of the dual-modulus prescaler. Used in conjunction with PSOUT+. Requires PECL-compatible termination. LOBUFSEL = VCC: 50LO buffer inverting output.
43 VRLO LO Internal Regulator. Bypass with a 1000pF ceramic chip capacitor to GND.
44 TANK+ LO Tank Oscillator Input. Connect to an external LC tank with varactor tuning.
47 FB Feedback Input for Loop Filter
48 CP Voltage Drive Output. Control of external charge-pump transistor.
Figure 1. Modulus Control Timing Diagram
MOD+, MOD-
50%
50%
t
SUM
PSOUT+
PSOUT-
t
HM
50%
50%
MAX2106
DBS Direct Downconverter
8 _______________________________________________________________________________________
Functional Diagram
CPG1 CPG2
PLLIN+
PLLIN-
XTL+
XTL-
LODIVSEL
MOD+ MOD-
RFBAND
TANK+
TANK-
V
VRLO
CFLT
GND
RFIN+
RFIN-
GC1
GC2
FLCLK
INSEL
MAX2106
CHARGE
PUMP
/8
/32, 33
1, 2
x2
CC
VOLTAGE
REGULATOR
90°
BASEBAND
OFFSET
CORRECTION
CP
FB
XTLOUT
LOBUFSEL LOBUF+/PSOUT+
LOBUF-/PSOUT-
IDC+ IDC­QDC+ QDC-
IOUT+
IOUT-
QOUT+
QOUT-
RFOUT
MAX2106
DBS Direct Downconverter
_______________________________________________________________________________________ 9
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/packages
.)
48L,TQFP.EPS
MAX2106
DBS Direct Downconverter
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
10 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2003 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/packages
.)
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