General Description
The MAX2010 adjustable RF predistorter is designed to
improve power amplifier (PA) adjacent-channel power
rejection (ACPR) by introducing gain and phase expansion in a PA chain to compensate for the PA’s gain and
phase compression. With its +23dBm maximum input
power level and wide adjustable range, the MAX2010
can provide up to 12dB of ACPR improvement for
power amplifiers operating in the 500MHz to 1100MHz
frequency band. Higher frequencies of operation can
be achieved with this IC’s counterpart, the MAX2009.
The MAX2010 is unique in that it provides up to 6dB of
gain expansion and 21° of phase expansion as the input
power is increased. The amount of expansion is configurable through two independent sets of control: one set
adjusts the gain expansion breakpoint and slope, while
the second set controls the same parameters for phase.
With these settings in place, the linearization circuit can
be run in either a static set-and-forget mode, or a more
sophisticated closed-loop implementation can be
employed with real-time software-controlled distortion
correction. Hybrid correction modes are also possible
using simple lookup tables to compensate for factors
such as PA temperature drift or PA loading.
The MAX2010 comes in a 28-pin thin QFN exposed
pad (EP) package (5mm x 5mm) and is specified for
the extended (-40°C to +85°C) temperature range.
Applications
cdma2000™, GSM/EDGE, and iDEN Base Stations
Feed-Forward PA Architectures
Digital Baseband Predistortion Architectures
Military Applications
Features
♦ Up to 12dB ACPR Improvement*
♦ Independent Gain and Phase Expansion Controls
♦ Gain Expansion Up to 6dB
♦ Phase Expansion Up to 21°
♦ 500MHz to 1100MHz Frequency Range
♦ Exceptional Gain and Phase Flatness
♦ Group Delay <2.4ns (Gain and Phase Sections
Combined)
♦ ±0.03ns Group Delay Ripple Over a 100MHz Band
♦ Capable of Handling Input Drives Up to +23dBm
♦ On-Chip Temperature Variation Compensation
♦ Single +5V Supply
♦ Low Power Consumption: 75mW (typ)
♦ Fully Integrated into Small 28-Pin Thin QFN
Package
*Performance dependent on amplifier, bias, and modulation.
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
________________________________________________________________ Maxim Integrated Products 1
Functional Diagram/
Pin Configuration
Ordering Information
19-2930; Rev 0; 8/03
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
*EP = Exposed paddle.
cdma2000 is a trademark of Telecommunications Industry
Assoc.
PART TEMP RANGE PIN-PACKAGE
MAX2010ETI-T -40°C to +85°C 28 Thin QFN-EP*
GND*
OUTG
GND*
GCS
GFS
28 27 26 25 24 23 22
1
GND*
2
GND*
3
ING
4
GND*
5
GND*
6
OUTP
7
GND*
*INTERNALLY CONNECTED TO EXPOSED GROUND PADDLE.
MAX2010
8 9 10 11 12 13 14
INP
GND*
GND*
CONTROL
PFS1
GAIN
PHASE
CONTROL
PFS2
GBP
PDCS1
GND*
PDCS2
21
V
CCG
20
GND*
PBRAW
19
18
PBEXP
17
PBIN
16
GND*
15
V
CCP
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(MAX2010 EV kit; V
CCG
= V
CCP
= +4.75V to +5.25V; no RF signal applied; INP, ING, OUTP, OUTG are AC-coupled and terminated to
50Ω. V
PF_S1
= open; PBEXP shorted to PBRAW; V
PDCS1
= V
PDCS2
= 0.8V; V
PBIN
= V
GBP
= V
GCS
= GND; V
GFS
= V
CCG;TA
= -40°C to
+85°C. Typical values are at V
CCG
= V
CCP
= +5.0V, TA= +25°C, unless otherwise noted.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
V
CCG
, V
CCP
to GND ..............................................-0.3V to +5.5V
ING, OUTG, GCS, GFS, GBP to GND......-0.3V to (V
CCG
+ 0.3V)
INP, OUTP, PFS_, PDCS_, PBRAW,
PBEXP, PBIN to GND ............................-0.3V to (V
CCP
+ 0.3V)
Input (ING, INP, OUTP, OUTG) Level ............................+23dBm
PBEXP Output Current ........................................................±1mA
Continuous Power Dissipation (T
A
= +70°C)
28-Pin Thin QFN-EP
(derate 21mW/°C above +70°C)...............................1667mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering 10s) ..................................+300°C
Supply Voltage V
Supply Current
Analog Input Voltage Range
Logic-Input High Voltage PDCS1, PDCS2 (Note 1) 2.0 V
Logic-Input Low Voltage PDCS1, PDCS2 (Note 1) 0.8 V
Logic Input Current -2 +2 µA
PARAMETER CONDITIONS MIN TYP MAX UNITS
, V
CCG
CCP
V
CCP
V
CCG
PBIN, PBRAW 0 V
GBP, GFS, GCS 0 V
V
= V
GFS
GCS
V
= 0 to +5V -100 +170Analog Input Current
GBP
= 0 to +5V -100 +220
V
PBIN
= V
PBRAW
= 0V -2 +2
4.75 5.25 V
5.8 7
10 12.1
CCP
CCG
mA
V
µA
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
_______________________________________________________________________________________ 3
AC ELECTRICAL CHARACTERISTICS
(MAX2010 EV kit, V
CCG
= V
CCP
= +4.75V to +5.25V, 50Ω environment, PIN= -20dBm, fIN= 500MHz to 1100MHz, V
GCS
= +1.0V,
V
GFS
= +5.0V, V
GBP
= +1.2V, V
PBIN
= V
PDCS1
= V
PDCS2
= 0V, V
PF_S1
= +5V, V
PBRAW
= V
PBEXP,TA
= -40°C to +85°C. Typical val-
ues are at f
IN
= 880MHz, V
CCG
= V
CCP
= +5V, TA= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Operating Frequency Range 500 1100 MHz
VSWR ING, INP, OUTG, OUTP 1.3:1
PHASE CONTROL SECTION
Nominal Gain -5.5 dB
Gain Variation Over Temperature TA = -40°C to +85°C-1.7dB
Gain Flatness Over a 100MHz band ±0.1 dB
Phase-Expansion Breakpoint
Maximum
Phase-Expansion Breakpoint
Minimum
Phase-Expansion Breakpoint
Variation Over Temperature
Phase Expansion
V
= +5V 23 dBm
PBIN
V
= 0V 0.7 dBm
PBIN
= -40°C to +85°C ±1.5 dB
T
A
V
= +5V,
PF_S1
= V
V
PDCS1
P
= -20 dBm to +23 dBm
IN
V
= 5V,
PDCS1
V
= 0V,
PDCS2
= +1.5V
V
PF_S1
V
= 0V,
PDCS1
V
= 5V,
PDCS2
= +1.5V
V
PF_S1
PDCS2
= 0V,
21
16
14
Degrees
V
= 0V,
PF_S1
Phase-Expansion Slope
Maximum
Phase-Expansion Slope Minimum
Phase-Slope Variation Over
Temperature
= V
V
PDCS1
P
= -20dBm to +23dBm
IN
= +9dBm 1.4
P
IN
= 0V,
V
PF_S1
V
= V
PDCS1
= +9dBm
P
IN
= +9dBm, TA = -40°C to +85°C 0.05
P
IN
PDCS2
PDCS2
= +5V,
= +5V,
6
0.6
Degrees
/dB
Degrees
/dB
Degrees
/dB
Phase Ripple Over a 100MHz band, deviation from linear phase ±0.02 Degrees
Noise Figure 5.5 dB
Absolute Group Delay Interconnects de-embedded 1.3 ns
Group Delay Ripple Over a 100MHz band ±0.01 ns
Parasitic Gain Expansion PIN = -20dBm to +23dBm +0.4 dB
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
4 _______________________________________________________________________________________
Note 1: Guaranteed by design and characterization.
Note 2: All limits reflect losses and characteristics of external components shown in the Typical Application Circuit, unless otherwise
noted.
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2010 EV kit, V
CCG
= V
CCP
= +4.75V to +5.25V, 50Ω environment, PIN= -20dBm, fIN= 500MHz to 1100MHz, V
GCS
= +1.0V,
V
GFS
= +5.0V, V
GBP
= +1.2V, V
PBIN
= V
PDCS1
= V
PDCS2
= 0V, V
PF_S1
= +5V, V
PBRAW
= V
PBEXP,TA
= -40°C to +85°C. Typical val-
ues are at f
IN
= 880MHz, V
CCG
= V
CCP
= +5V, TA= +25°C, unless otherwise noted.) (Notes 1, 2)
GAIN CONTROL SECTION
Nominal Gain
PARAMETER CONDITIONS MIN TYP MAX UNITS
Gain Variation Over Temperature TA = -40°C to +85°C-1.4dB
Gain Flatness Over a 100MHz band ±0.2 dB
Gain-Expansion Breakpoint
Maximum
Gain-Expansion Breakpoint
Minimum
Gain-Expansion Breakpoint
Variation Over Temperature
Gain-Expansion
Gain-Expansion Slope
Gain-Slope Variation Over
Temperature
Noise Figure 14.9 dB
Absolute Group Delay Interconnects de-embedded 1.12 ns
Group Delay Ripple Over a 100MHz band ±0.02 ns
Phase Ripple Over a 100MHz band, deviation from linear phase ±0.09 Degrees
Parasitic Phase Expansion PIN = -20dBm to +23dBm +3 Degrees
V
GCS
V
GCS
V
GBP
V
GBP
T
= -40°C to +85°C-0.5dB
A
V
GFS
V
GFS
V
GFS
V
GFS
P
IN
= 0V, V
GFS
= +5V, V
= +5V 23 dBm
= +0.5V -2.5 dBm
= +5V, PIN = -20dBm to +23dBm 5.3
= 0V, PIN = -20dBm to +23dBm 3.1
= +5V, PIN = +15dBm 0.43
= +0V, PIN = +15dBm 0.23
= +15dBm, TA = -40°C to +85°C -0.01 dB/dB
= +5V -24.3
= 0V -7.6
GFS
-14.9
dB
dB
dB/dB
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
_______________________________________________________________________________________ 5
Typical Operating Characteristics
Phase Control Section
(MAX2010 EV kit, V
CCP
= +5.0V, PIN= -20dBm, V
PBIN
= 0V, V
PF_S1
= +5.0V, V
PDCS1
= V
PDCS2
= 0V, fIN= 880MHz, TA= +25°C
unless otherwise noted.)
SUPPLY CURRENT
vs. SUPPLY VOLTAGE
6.6
6.5
6.4
6.3
TA = +85°C
6.2
6.1
6.0
5.9
SUPPLY CURRENT (mA)
5.8
5.7
5.6
4.75 4.954.85 5.05 5.15 5.25
TA = +25°C
TA = -40°C
SUPPLY VOLTAGE (V)
LARGE-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
0
0
MAX2010 toc01
10
20
30
INPUT RETURN LOSS (dB)
40
50
0.5 0.6 0.7
A = V
B = V
C = V
D = V
0
SMALL-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
FREQUENCY (GHz)
= V
PDCS1
PDCS2
= V
PDCS1
PDCS2
= V
PDCS1
PDCS2
= V
PDCS1
PDCS2
LARGE-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
D
= V
= 0V, V
= 5V, V
= V
B
0.9 1.0 1.1
0.8
= 0V
PF_S1
PF_S1
PF_S1
= 5V
PF_S1
C
= 5V
= 0V
A
0
MAX2010 toc02
10
20
30
OUTPUT RETURN LOSS (dB)
40
50
0.5 0.6 0.7
-4.0
SMALL-SIGNAL OUTPUT RETURN LOSS
A = V
B = V
C = V
D = V
vs. FREQUENCY
FREQUENCY (GHz)
= V
= V
= V
= V
PDCS2
PDCS2
PDCS2
PDCS2
= V
= 0V, V
= 5V, V
= V
PDCS1
PDCS1
PDCS1
PDCS1
SMALL-SIGNAL GAIN
vs. FREQUENCY
A
0.8
PF_S1
D
PF_S1
PF_S1
PF_S1
B
C
0.9 1.0 1.1
= 0V
= 5V
= 0V
= 5V
MAX2010 toc03
10
20
30
INPUT RETURN LOSS (dB)
40
50
0.5 0.6 0.7
PIN = +15dBm
= V
A = V
PDCS1
= V
B = V
PDCS1
= V
C = V
PDCS1
= V
D = V
PDCS1
-4.5
MAX2010 toc05
-5.0
-5.5
GAIN (dB)
-6.0
-6.5
-7.0
0.5 1.1
TA = -40°C
TA = +25°C
TA = +85°C
FREQUENCY (GHz)
1.00.90.80.70.6
B
D
0.8
FREQUENCY (GHz)
= V
PDCS2
PF_S1
= 0V, V
PDCS2
PDCS2
PDCS2
= 5V, V
= V
PF_S1
PF_S1
PF_S1
A
C
0.9 1.0 1.1
= 0V
= 5V
= 0V
= 5V
MAX2010 toc04
10
20
30
OUTPUT RETURN LOSS (dB)
40
50
0.5 0.6 0.7
PIN = +15dBm
A = V
B = V
C = V
D = V
PDCS1
PDCS1
PDCS1
PDCS1
FREQUENCY (GHz)
= V
= V
PDCS2
= V
= 0V, V
PDCS2
= V
= 5V, V
PDCS2
= V
= V
PDCS2
0.8
D
PF_S1
PF_S1
B
= 0V
PF_S1
PF_S1
= 5V
A
C
0.9 1.0 1.1
= 5V
= 0V
MAX2010 toc06
MAX2010
500MHz to 1100MHz Adjustable
RF Predistorter
6 _______________________________________________________________________________________
Typical Operating Characteristics (continued)
Phase Control Section (continued)
(MAX2010 EV kit, V
CCP
= +5.0V, PIN= -20dBm, V
PBIN
= 0V, V
PF_S1
= +5.0V, V
PDCS1
= V
PDCS2
= 0V, fIN= 880MHz, TA= +25°C
unless otherwise noted.)
-4.0
-4.5
-5.0
-5.5
GAIN (dB)
-6.0
SMALL-SIGNAL GAIN
V
vs. FREQUENCY
= 4.75V, 5.0V, 5.25V
CCP
MAX2010 toc07
-4.0
-4.5
-5.0
-5.5
GAIN (dB)
-6.0
SMALL-SIGNAL GAIN
vs. COARSE SLOPE
V
= 1.5V
PF_S1
V
= 5V
PF_S1
V
PF_S1
= 0V
MAX2010 toc08
SMALL-SIGNAL GAIN
vs. COARSE SLOPE
-4.0
-4.5
-5.0
-5.5
GAIN (dB)
-6.0
TA = -40°C
= +25°C
T
A
= +85°C
T
A
MAX2010 toc09
-6.5
-7.0
0.5 1.1
FREQUENCY (GHz)
GROUP DELAY vs. FREQUENCY
1.50
1.45
1.40
1.35
DELAY (ns)
1.30
1.25
1.20
0.5 1.1
A = V
= V
PDCS1
= V
B = V
PDCS1
= V
C = V
PDCS1
= V
D = V
PDCS1
INTERCONNECTS DE-EMBEDDED
D
FREQUENCY (GHz)
= V
PDCS2
PF_S1
= 0V, V
PDCS2
PDCS2
PDCS2
= 5V, V
= V
PF_S1
PF_S1
PF_S1
= 0V
= 5V
C
= 5V
= 0V
-6.5
-7.0
1.00.90.80.70.6
PDCS1 = 0
PDCS2 = 0
PDCS1 = 5
PDCS2 = 0
COARSE SLOPE (V)
PDCS1 = 0
PDCS2 = 5
PDCS1 = 5
PDCS2 = 5
NOISE FIGURE vs. FREQUENCY
7.0
6.8
MAX2010 toc10
6.6
6.4
6.2
6.0
A
B
1.00.90.80.70.6
5.8
NOISE FIGURE (dB)
5.6
5.4
5.2
5.0
0.5 1.1
A = V
B = V
C = V
D = V
A
PDCS1
PDCS1
PDCS1
PDCS1
D
B
FREQUENCY (GHz)
= V
= V
PDCS2
= V
= 0V, V
PDCS2
= V
= 5V, V
PDCS2
= V
= V
PDCS2
PF_S1
PF_S1
= 0V
PF_S1
PF_S1
= 5V
= 5V
= 0V
C
1.00.90.80.70.6
-6.5
-7.0
PDCS1 = 0
PDCS2 = 0
6.00
5.95
MAX2010 toc11
5.90
5.85
5.80
SUPPLY CURRENT (mA)
5.75
5.70
PDCS1 = 5
PDCS2 = 0
COARSE SLOPE (V)
PDCS1 = 0
PDCS2 = 5
PDCS1 = 5
PDCS2 = 5
SUPPLY CURRENT vs. INPUT POWER
MAX2010 toc12
B
C
D = V
E = V
D
E
161284
20
= 1.5V
PBIN
= 3.0V
PBIN
A
024
PBIN
PBIN
PBIN
= 0V
= 0.5V
= 1.0V
INPUT POWER (dBm)
A = V
B = V
C = V