MAXIM MAX19997A Technical data
General Description
The MAX19997A dual downconversion mixer is a versatile, highly integrated diversity downconverter that provides high linearity and low noise figure for a multitude of
1800MHz to 2900MHz base-station applications. The
MAX19997A fully supports both low- and high-side LO
injection architectures for the 2300MHz to 2900MHz
WiMAX™, LTE, WCS, and MMDS bands, providing
8.7dB gain, +24dBm input IP3, and 10.3dB NF in the
low-side configuration, and 8.7dB gain, +24dBm input
IP3, and 10.4dB NF in the high-side configuration. Highside LO injection architectures can be further extended
down to 1800MHz with the addition of one tuning element (a shunt inductor) on each RF port.
The device integrates baluns in the RF and LO ports,
an LO buffer, two double-balanced mixers, and a pair
of differential IF output amplifiers. The MAX19997A
requires a typical LO drive of 0dBm and a supply current guaranteed below 420mA to achieve the targeted
linearity performance.
The MAX19997A is available in a compact 6mm x 6mm,
36-pin thin QFN lead-free package with an exposed
pad. Electrical performance is guaranteed over the
extended temperature range, from TC= -40°C to +85°C.
Applications
2.3GHz WCS Base Stations
2.5GHz WiMAX and LTE Base Stations
2.7GHz MMDS Base Stations
UMTS/WCDMA and cdma2000
®
3G Base
Stations
PCS1900 and EDGE Base Stations
PHS/PAS Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
Private Mobile Radios
Military Systems
Features
o 1800MHz to 2900MHz RF Frequency Range
o 1950MHz to 3400MHz LO Frequency Range
o 50MHz to 550MHz IF Frequency Range
o Supports Both Low-Side and High-Side LO
Injection
o 8.7dB Conversion Gain
o +24dBm Input IP3
o 10.3dB Noise Figure
o +11.3dBm Input 1dB Compression Point
o 70dBc Typical 2 x 2 Spurious Rejection at
PRF= -10dBm
o Dual Channels Ideal for Diversity Receiver
Applications
o Integrated LO Buffer
o Integrated LO and RF Baluns for Single-Ended
Inputs
o Low -3dBm to +3dBm LO Drive
o Pin Compatible with the MAX19999 3000MHz to
4000MHz Mixer
o Pin Similar to the MAX9995/MAX9995A and
MAX19995/MAX19995A 1700MHz to 2200MHz
Mixers and the MAX9985/MAX9985A and
MAX19985/MAX19985A 700MHz to 1000MHz
Mixers
o 42dB Channel-to-Channel Isolation
o Single +5.0V or +3.3V Supply
o External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/ReducedPerformance Mode
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
________________________________________________________________
Maxim Integrated Products
1
Ordering Information
19-4288; Rev 3; 8/11
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
PART TEMP RANGE PIN-PACKAGE
MAX19997AETX+ -40°C to +85°C
36 Thin QFN-EP*
MAX19997AETX+T
-40°C to +85°C
36 Thin QFN-EP*
+
Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
Pin Configuration/Functional Block Diagram appears at
end of data sheet.
WiMAX is a trademark of WiMAX Forum.
cdma2000 is a registered trademark of Telecommunications
Industry Association.
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
optimized for the standard RF band (see Table 1), no input RF or LO signals applied, VCC= +4.75V to
+5.25V, T
C
= -40°C to +85°C. Typical values are at VCC= +5.0V, TC= +25°C, unless otherwise noted. R1, R4 = 750Ω, R2, R5 = 698Ω.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
VCCto GND...........................................................-0.3V to +5.5V
RF_, LO to GND.....................................................-0.3V to +0.3V
IFM_, IFD_, IFM_SET, IFD_SET, LO_ADJ_M,
LO_ADJ_D to GND.................................-0.3V to (V
CC
+ 0.3V)
RF_, LO Input Power ......................................................+15dBm
RF_, LO Current (RF_ and LO is DC
shorted to GND through balun)................................... ...50mA
Continuous Power Dissipation (Note 1) ..............................8.7W
Operating Case Temperature Range
(Note 4) ...................................................T
C
= -40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Note 1: Based on junction temperature TJ= TC+ (θJCx VCCx ICC). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details. The junction
temperature must not exceed +150°C.
Note 2: Junction temperature T
J
= TA+ (θJAx VCCx ICC). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial
.
Note 4: T
C
is the temperature on the exposed pad of the package. TAis the ambient temperature of the device and PCB.
PACKAGE THERMAL CHARACTERISTICS
Junction-to-Ambient Thermal Resistance (θJA)
(Notes 2, 3)...................................................................38°C/W
Junction-to-Case Thermal Resistance (θJC)
(Notes 1, 3)..................................................................7.4°C/W
Supply Voltage V
Total Supply Current I
VCC (Pin 4) Supply Current
(Main and Diversity Paths)
VCC (Pin 10) Supply Current
(Diversity Path)
VCC (Pin 16) Supply Current
(Diversity Path)
VCC (Pin 21) Supply Current
(Main and Diversity Paths)
VCC (Pin 30) Supply Current
(Main Path)
VCC (Pin 36) Supply Current
(Main Path)
IFM Bias Supply Current (Main
Path)
IFD Bias Supply Current
(Diversity Path)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
CC
CC
VCC = 5.0V 388 420
VCC = 5.25V 390.4
= 5.25V 2.5 mA
V
CC
V
= 5.25V 8.9 mA
CC
V
= 5.25V 109.3 mA
CC
V
= 5.25V 28.3 mA
CC
V
= 5.25V 109.3 mA
CC
V
= 5.25V 8.9 mA
CC
Total bias feeding IFM- and IFM+ through
R3, L1 and L2; V
Total bias feeding IFD+ and IFD- through
R6, L3 and L4; V
= 5.25V
CC
= 5.25V
CC
4.75 5.25 V
mA
61.6 mA
61.6 mA
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
_______________________________________________________________________________________ 3
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
optimized for the standard RF band (see Table 1), no input RF or LO signals applied, VCC= +3.0V to
+3.6V, T
C
= -40°C to +85°C. Typical values are at VCC= +3.3V, TC= +25°C, unless otherwise noted. R1, R4 = 1.1kΩ, R2, R5 = 845Ω.)
RECOMMENDED AC OPERATING CONDITIONS
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
optimized for the standard RF band (see Table 1),VCC= +4.75V to +5.25V, RF and LO ports are driven
from 50Ω sources, P
LO
= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fLO= 2650MHz to 3250MHz, fIF= 350MHz,
f
RF
< fLO, TC= -40°C to +85°C. Typical values are at VCC= +5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2600MHz, fLO= 2950MHz,
f
IF
= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
Supply Voltage V
Supply Current I
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
CC
CC
Total supply current, VCC = +3.3V 279 310 mA
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF Frequency Without External
Tuning
RF Frequency with External
Tuning
LO Frequency f
IF Frequency f
f
RF
f
RF
LO
(Note 5) 2400 2900 MHz
S ee Tab l e 2 for an outl i ne of tuni ng el em ents
op ti m i zed for 1950M H z op er ati on;
op ti m i zati on at other fr eq uenci es w i thi n the
1800M H z to 2400M H z r ang e can b e
achi eved w i th different component values;
contact the factory for details
(Notes 5, 6) 1950 3400 MHz
Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the Typical
Application Circuit, IF matching
components affect the IF frequency range
(Notes 5, 6)
IF
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Notes 5, 6)
3.0 3.3 3.6 V
1800 2400 MHz
100 550
MHz
50 250
LO Drive Level P
LO
-3 +3 dBm
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Conversion Gain G
Conversion Gain Flatness
Gain Variation Over Temperature TC
fRF = 2400MHz to 2900MHz,
C
T
= +25°C (Notes 8, 9, 10)
C
fRF = 2305MHz to 2360MHz 0.15
fRF = 2500MHz to 2570MHz 0.15
fRF = 2570MHz to 2620MHz 0.1
fRF = 2500MHz to 2690MHz 0.15
= 2700MHz to 2900MHz 0.15
f
RF
fRF = 2300MHz to 2900MHz,
CG
= -40°C to +85°C
T
C
8.1 8.7 9.3 dB
-0.01 dB/°C
dB
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
4 _______________________________________________________________________________________
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)
(
Typical Application Circuit
optimized for the standard RF band (see Table 1),VCC= +4.75V to +5.25V, RF and LO ports are driven
from 50Ω sources, P
LO
= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fLO= 2650MHz to 3250MHz, fIF= 350MHz,
f
RF
< fLO, TC= -40°C to +85°C. Typical values are at VCC= +5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2600MHz, fLO= 2950MHz,
fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Input Compression Point IP
Third-Order Input Intercept Point IIP3
1dB
(Notes 8, 9, 11) 9.6 11.3 dBm
f
- f
RF1
(Notes 8, 9)
f
RF
P
RF
(Notes 8, 9)
= 1MHz, PRF = -5dBm per tone
RF2
= 2600MHz, f
= -5dBm per tone, TC = +25°C
RF1
- f
= 1MHz,
RF2
22.0 24
22.5 24
dBm
Thi r d - O r d er Inp ut Inter cep t P oi nt
V ar i ati on Over Tem p er atur e
Noise Figure NF
Noise Figure Temperature
Coefficient
Noise Figure Under Blocking
Conditions
2LO - 2RF Spur 2 x 2
3LO - 3RF Spur 3 x 3
RF Input Return Loss
LO Input Return Loss
IF Output Impedance Z
TC
NF
SSB
NF
IF
f
- f
RF1
S i ng l e si d eb and , no b l ocker s p r esent
f
RF
Single sideband, no blockers present,
f
R F
(Note 6, 8, 10)
Single sideband, no blockers present,
T
C
f
BLOCKER
f
RF
B
0dBm, V
fRF = 2600MHz, fLO = 2950MHz,
P
RF
(Note 8)
f
RF
P
RF
(Notes 8, 9)
fRF = 2600MHz, fLO = 2950MHz,
P
RF
T
C
f
RF
P
RF
T
C
LO on and IF terminated into a matched
impedance
RF and IF terminated into a matched
impedance
Nominal differential impedance at the IC’s
IF outputs
= 1MHz, TC = -40°C to +85°C ±0.3 dBm
RF2
= 2400M H z to 2900M H z ( N otes 6, 8, 10)
= 2400M H z to 2900M H z , TC = +25°C
= -40°C to +85°C
= 2412MHz, P
= 2600MHz, fLO = 2950MHz, PLO =
= + 5.0V , TC = + 25°C ( Notes 8, 12)
C C
= -10dBm, f
= 2600MHz, fLO = 2950MHz,
= -5dBm, f
= -10dBm, f
= +25°C (Note 8)
= 2600MHz, fLO = 2950MHz,
= -5dBm, f
= +25°C (Notes 8, 9)
SPUR
SPUR
SPUR
SPUR
BLOCKER
= fLO - 175MHz
= fLO - 175MHz
= fLO - 116.67MHz,
= fLO - 116.67MHz,
10.4 12.5
dB
10.4 11.4
0.018 dB/°C
= 8dBm,
22.5 25 dB
62 69
dBc
57 64
73 84
dBc
63 74
14 dB
13 dB
200 Ω
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
_______________________________________________________________________________________ 5
+5.0V SUPPLY, HIGH-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)
(
Typical Application Circuit
optimized for the standard RF band (see Table 1),VCC= +4.75V to +5.25V, RF and LO ports are driven
from 50Ω sources, P
LO
= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fLO= 2650MHz to 3250MHz, fIF= 350MHz,
f
RF
< fLO, TC= -40°C to +85°C. Typical values are at VCC= +5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2600MHz, fLO= 2950MHz,
fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
optimized for the standard RF band (see Table 1), VCC= +4.75V to +5.25V, RF and LO ports are driven
from 50Ω sources, P
LO
= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fLO= 1950MHz to 2550MHz, fIF= 350MHz,
fRF> fLO, TC= -40°C to +85°C. Typical values are at VCC= +5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2600MHz, fLO= 2250MHz,
fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
IF Output Return Loss
RF-to-IF Isolation 25 dB
LO Leakage at RF Port (Notes 8, 9) -28 dBm
2LO Leakage at RF Port -33 dBm
LO Leakage at IF Port -18.5 dBm
Channel Isolation
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical
Application Circuit
RFMAIN (RFDIV) converted power
measured at IFDIV (IFMAIN) relative to
IFMAIN (IFDIV), all unused ports terminated
to 50Ω
38.5 43 dB
21 dB
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Conversion Gain G
Conversion Gain Flatness
Gain Variation Over Temperature TC
Input Compression Point IP
Third-Order Input Intercept Point IIP3
Thi r d - O r d er Inp ut Inter cep t P oi nt
V ar i ati on Over Tem p er atur e
1dB
fRF = 2400MHz to 2900MHz,
C
T
= +25°C (Notes 8, 9, 10)
C
fRF = 2305MHz to 2360MHz 0.2
fRF = 2500MHz to 2570MHz 0.15
fRF = 2570MHz to 2620MHz 0.2
fRF = 2500MHz to 2690MHz 0.25
= 2700MHz to 2900MHz 0.25
f
RF
fRF = 2300MHz to 2900MHz, TC = -40°C to
CG
+85°C
(Notes 6, 8, 11) 9.6 11.3 dBm
f
- f
RF1
(Notes 8, 9)
f
RF
P
RF
(Notes 8, 9)
f
RF1
= 1MHz, PRF = -5dBm per tone
RF2
= 2600MHz, f
= -5dBm per tone, TC = +25°C
- f
= 1MHz, TC = -40°C to +85°C ±0.3 dBm
RF2
RF1
- f
= 1MHz,
RF2
8.1 8.7 9.3 dB
-0.01 dB/°C
21.6 23 dBm
22 23.8 dBm
dB
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
6 _______________________________________________________________________________________
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)
(
Typical Application Circuit
optimized for the standard RF band (see Table 1), VCC= +4.75V to +5.25V, RF and LO ports are driven
from 50Ω sources, P
LO
= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fLO= 1950MHz to 2550MHz, fIF= 350MHz,
fRF> fLO, TC= -40°C to +85°C. Typical values are at VCC= +5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2600MHz, fLO= 2250MHz,
f
IF
= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Noise Figure NF
Single sideband, no blockers present
f
= 2400MHz to 2900MHz (Notes 6, 8)
RF
SSB
Single sideband, no blockers present,
f
= 2400MHz to 2900MHz, TC = +25°C
RF
(Notes 6, 8)
10.3 13.0
10.3 11.3
dB
Noise Figure Temperature
Coefficient
Noise Figure Under Blocking
Conditions
2RF - 2LO Spur 2 x 2
3RF - 3LO Spur 3 x 3
RF Input Return Loss
LO Input Return Loss
IF Output Impedance Z
TC
NF
NF
IF
Single sideband, no blockers present,
= -40°C to +85°C
T
C
f
BLOCKER
f
RF
B
P
LO
(Notes 6, 8, 12)
fRF = 2600MHz, fLO = 2250MHz,
P
RF
T
C
f
RF
P
RF
T
C
fRF = 2600MHz, fLO = 2250MHz,
P
RF
T
C
f
RF
P
RF
T
C
LO on and IF terminated into a matched
impedance
RF and IF terminated into a matched
impedance
Nominal differential impedance at the IC’s
IF outputs
= 2793MHz, P
= 2600MHz, f
= 0dBm, V
= -10dBm, f
= +25°C (Note 8)
= 2600MHz, fLO = 2250MHz,
= -5dBm, f
= +25°C (Notes 8, 9)
= -10dBm, f
= +25°C (Note 8)
= 2600MHz, f
= -5dBm, f
= +25°C (Notes 8, 9)
C C
SPUR
SPUR
SPUR
SPUR
BLOCKER
= 2250MHz,
LO
= + 5.0V , TC = +25°C
= fLO + 175MHz,
= fLO + 175MHz,
= f
LO
= 2250MHz,
LO
+ 116.67MHz,
= f
LO
= 8dBm,
+ 116.67MHz,
0.018 dB/°C
22 25 dB
62 67
dBc
57 62
78 83
dBc
68 73
16 dB
11.5 dB
200 Ω
RF terminated into 50Ω, LO driven by 50Ω
IF Output Return Loss
source, IF transformed to 50Ω using
external components shown in the Typical
Application Circuit
20 dB
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
_______________________________________________________________________________________ 7
+3.3V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(
Typical Application Circuit
optimized for the standard RF band (see Table 1). Typical values are at VCC= +3.3V, PRF= -5dBm,
P
LO
= 0dBm, fRF= 2600MHz, fLO= 2250MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
+5.0V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)
(
Typical Application Circuit
optimized for the standard RF band (see Table 1), VCC= +4.75V to +5.25V, RF and LO ports are driven
from 50Ω sources, P
LO
= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fLO= 1950MHz to 2550MHz, fIF= 350MHz,
fRF> fLO, TC= -40°C to +85°C. Typical values are at VCC= +5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 2600MHz, fLO= 2250MHz,
f
IF
= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF-to-IF Isolation 23.5 dB
LO Leakage at RF Port (Notes 8, 9) -31 -24 dBm
2LO Leakage at RF Port -27 dBm
LO Leakage at IF Port -9.6 dBm
Channel Isolation
RFMAIN (RFDIV) converted power
measured at IFDIV (IFMAIN) relative to
IFMAIN (IFDIV), all unused ports terminated
to 50Ω (Notes 8, 9)
38.5 42 dB
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Conversion Gain G
Conversion Gain Flatness
Gain Variation Over Temperature TC
Input Compression Point IP
Thi r d - O r d er Inp ut Inter cep t P oi nt IIP3 f
Third-Order Input Intercept
Variation Over Temperature
Noise Figure NF
Noise Figure Temperature
Coefficient
(Note 9) 8.5 dB
C
fRF = 2305MHz to 2360MHz 0.2
fRF = 2500MHz to 2570MHz 0.15
fRF = 2570MHz to 2620MHz 0.15
fRF = 2500MHz to 2690MHz 0.25
= 2700MHz to 2900MHz 0.15
f
RF
TC
CG
1dB
SSB
NF
fRF = 2300MHz to 2900MHz,
T
= -40°C to +85°C
C
- f
RF1
f
RF1
Single sideband, no blockers present 9.7 dB
Single sideband, no blockers present,
T
C
= 1MHz, PRF = -5dBm per tone 19.7 dBm
RF2
- f
= 1MHz, TC = -40°C to +85°C ±0.5 dBm
RF2
= -40°C to +85°C
-0.01 dB/°C
7.7 dBm
0.018 dB/°C
dB
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
8 _______________________________________________________________________________________
+3.3V SUPPLY, LOW-SIDE LO INJECTION AC ELECTRICAL CHARACTERISTICS
(continued)
(
Typical Application Circuit
optimized for the standard RF band (see Table 1). Typical values are at VCC= +3.3V, PRF= -5dBm,
P
LO
= 0dBm, fRF= 2600MHz, fLO= 2250MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 7)
Note 5: Operation outside this range is possible, but with degraded performance of some parameters. See the
Typical Operating
Characteristics
.
Note 6: Not production tested.
Note 7: All limits reflect losses of external components, including a 0.8dB loss at f
IF
= 350MHz due to the 4:1 impedance trans-
former. Output measurements taken at the IF outputs of
Typical Application Circuit
.
Note 8: Guaranteed by design and characterization.
Note 9: 100% production tested for functional performance.
Note 10: RF frequencies below 2400MHz require external RF tuning similar to components listed in Table 2.
Note 11: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ω source.
Note 12: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of
all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021:
Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers
.
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
2RF - 2LO Spur 2 x 2
3RF - 3LO Spur 3 x 3
RF Input Return Loss
LO Input Return Loss
IF Output Impedance Z
IF Output Return Loss
RF-to-IF Isolation 25 dB
LO Leakage at RF Port -36 dBm
2LO Leakage at RF Port -31 dBm
LO Leakage at IF Port -13.5 dBm
Channel Isolation
PRF = -10dBm, f
= -5dBm, f
P
RF
PRF = -10dBm, f
= -5dBm, f
P
RF
LO on and IF terminated into a matched
impedance
RF and IF terminated into a matched
impedance
Nominal differential impedance at the IC’s
IF
IF outputs
RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical
Application Circuit
RFMAIN (RFDIV) converted power
measured at IFDIV (IFMAIN) relative to
IFMAIN (IFDIV), all unused ports terminated
to 50Ω
= fLO + 175MHz 74
SPUR
= f
SPUR
SPUR
SPUR
+ 175MHz 69
LO
= fLO + 116.67MHz 74
= fLO + 116.67MHz 64
16 dB
11 dB
200 Ω
26 dB
42 dB
dBc
dBc
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
_______________________________________________________________________________________
9
Typical Operating Characteristics
(
Typical Application Circuit
, standard RF band (see Table 1), VCC= +5.0V, LO is high-side injected for a 350MHz IF, PLO= 0dBm,
P
RF
= -5dBm, TC= +25°C, unless otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc01
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
280026002400
7
8
9
10
11
6
2200 3000
TC = -30°C
TC = +25°C
TC = +85°C
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc02
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
280026002400
7
8
9
10
11
6
2200 3000
PLO = -3dBm, 0dBm, +3dBm
CONVERSION GAIN vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc03
RF FREQUENCY (MHz)
CONVERSION GAIN (dB)
280026002400
7
8
9
10
11
6
2200 3000
VCC = 4.75V, 5.0V, 5.25V
INPUT IP3 vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc04
INPUT IP3 (dBm)
23
24
25
26
22
RF FREQUENCY (MHz)
2800260024002200 3000
TC = -30°C
PRF = -5dBm/TONE
TC = +25°C
TC = +85°C
INPUT IP3 vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc05
INPUT IP3 (dBm)
23
24
25
26
22
RF FREQUENCY (MHz)
2800260024002200 3000
PRF = -5dBm/TONE
PLO = -3dBm, 0dBm, +3dBm
INPUT IP3 vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc06
INPUT IP3 (dBm)
23
24
25
26
22
RF FREQUENCY (MHz)
2800260024002200 3000
PRF = -5dBm/TONE
VCC = 5.25V
VCC = 5.0V
VCC = 4.75V
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc07
NOISE FIGURE (dB)
8
9
10
11
12
13
7
RF FREQUENCY (MHz)
2800260024002200 3000
TC = -30°C
TC = +25°C
TC = +85°C
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc08
NOISE FIGURE (dB)
8
9
10
11
12
13
7
RF FREQUENCY (MHz)
2800260024002200 3000
PLO = -3dBm, 0dBm, +3dBm
NOISE FIGURE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc09
NOISE FIGURE (dB)
8
9
10
11
12
13
7
RF FREQUENCY (MHz)
2800260024002200 3000
VCC = 4.75V, 5.0V, 5.25V
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
10 ______________________________________________________________________________________
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, standard RF band (see Table 1), VCC= +5.0V, LO is high-side injected for a 350MHz IF, PLO= 0dBm,
P
RF
= -5dBm, TC= +25°C, unless otherwise noted.)
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc10
2LO - 2RF RESPONSE (dBc)
60
70
80
50
RF FREQUENCY (MHz)
2800260024002200 3000
TC = -30°C
PRF = -5dBm
TC = +25°C
TC = +85°C
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc11
2LO - 2RF RESPONSE (dBc)
60
70
80
50
RF FREQUENCY (MHz)
2800260024002200 3000
PLO = +3dBm
PRF = -5dBm
PLO = 0dBm
PLO = -3dBm
2LO - 2RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc12
2LO - 2RF RESPONSE (dBc)
60
70
80
50
RF FREQUENCY (MHz)
2800260024002200 3000
VCC = 4.75V, 5.0V, 5.25V
PRF = -5dBm
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc13
3LO - 3RF RESPONSE (dBc)
65
75
85
95
55
RF FREQUENCY (MHz)
2800260024002200 3000
TC = -30°C
TC = +25°C, +85°C
PRF = -5dBm
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc14
3LO - 3RF RESPONSE (dBc)
65
75
85
95
55
RF FREQUENCY (MHz)
2800260024002200 3000
PLO = -3dBm, 0dBm, +3dBm
PRF = -5dBm
3LO - 3RF RESPONSE vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc15
3LO - 3RF RESPONSE (dBc)
65
75
85
95
55
RF FREQUENCY (MHz)
2800260024002200 3000
VCC = 4.75V, 5.0V, 5.25V
PRF = -5dBm
INPUT P
1dB
vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc16
INPUT P
1dB
(dBm)
10
11
12
13
9
RF FREQUENCY (MHz)
2800260024002200 3000
TC = -30°C
TC = +25°C
TC = +85°C
INPUT P
1dB
vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc17
INPUT P
1dB
(dBm)
10
11
12
13
9
RF FREQUENCY (MHz)
2800260024002200 3000
PLO = -3dBm, 0dBm, +3dBm
INPUT P
1dB
vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc18
INPUT P
1dB
(dBm)
10
11
12
13
9
RF FREQUENCY (MHz)
2800260024002200 3000
VCC = 4.75V
VCC = 5.25V
VCC = 5.0V
MAX19997A
Dual, SiGe High-Linearity, 1800MHz to 2900MHz
Downconversion Mixer with LO Buffer
______________________________________________________________________________________
11
Typical Operating Characteristics (continued)
(
Typical Application Circuit
, standard RF band (see Table 1), VCC= +5.0V, LO is high-side injected for a 350MHz IF, PLO= 0dBm,
P
RF
= -5dBm, TC= +25°C, unless otherwise noted.)
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc19
CHANNEL ISOLATION (dB)
35
40
45
50
55
60
30
RF FREQUENCY (MHz)
2800260024002200 3000
TC = -30°C, +25°C, +85°C
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc20
CHANNEL ISOLATION (dB)
35
40
45
50
55
60
30
RF FREQUENCY (MHz)
2800260024002200 3000
PLO = -3dBm, 0dBm, +3dBm
CHANNEL ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc21
CHANNEL ISOLATION (dB)
35
40
45
50
55
60
30
RF FREQUENCY (MHz)
2800260024002200 3000
VCC = 4.75V, 5.0V, 5.25V
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc22
LO LEAKAGE AT IF PORT (dBm)
-30
-20
-10
0
-40
LO FREQUENCY (MHz)
3150295027502550 3350
TC = -30°C
TC = +25°C, +85°C
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc23
LO LEAKAGE AT IF PORT (dBm)
-30
-20
-10
0
-40
LO FREQUENCY (MHz)
3150295027502550 3350
PLO = -3dBm, 0dBm, +3dBm
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc24
LO LEAKAGE AT IF PORT (dBm)
-30
-20
-10
0
-40
LO FREQUENCY (MHz)
3150295027502550 3350
VCC = 4.75V, 5.0V, 5.25V
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc25
RF-TO-IF ISOLATION (dB)
20
30
40
10
RF FREQUENCY (MHz)
2800260024002200 3000
TC = -30°C
TC = +25°C
TC = +85°C
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc26
RF-TO-IF ISOLATION (dB)
20
30
40
10
RF FREQUENCY (MHz)
2800260024002200 3000
PLO = -3dBm, 0dBm, +3dBm
RF-TO-IF ISOLATION vs. RF FREQUENCY
(LO > RF, STANDARD RF BAND)
MAX19997A toc27
RF-TO-IF ISOLATION (dB)
20
30
40
10
RF FREQUENCY (MHz)
2800260024002200 3000
VCC = 4.75V, 5.0V, 5.25V
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