MAXIM MAX19996A Technical data

General Description

The MAX19996A single, high-linearity downconversion
mixer provides 8.7dB conversion gain, +24.5dBm IIP3,
and 9.8dB noise figure for 2000MHz to 3900MHz WCS,
LTE, WiMAX™, and MMDS wireless infrastructure appli­cations. With an ultra-wide LO frequency range of
2100MHz to 4000MHz, the MAX19996A can be used in
either low-side or high-side LO injection architectures
for virtually all 2.5GHz and 3.5GHz applications. For a

2.5GHz variant tuned specifically for low-side injection,
refer to the MAX19996 data sheet.

In addition to offering excellent linearity and noise
performance, the MAX19996A also yields a high level
of component integration. This device includes a dou­ble-balanced passive mixer core, an IF amplifier, and
an LO buffer. On-chip baluns are also integrated to
allow for single-ended RF and LO inputs. The
MAX19996A requires a nominal LO drive of 0dBm,
and supply current is typically 230mA at V

CC

= 5.0V,

or 150mA at VCC= 3.3V.

The MAX19996A is pin compatible with the MAX19996
2000MHz to 3000MHz mixer. The device is also pin
similar with the MAX9984/MAX9986/MAX9986A
400MHz to 1000MHz mixers and the MAX9993/
MAX9994/MAX9996 1700MHz to 2200MHz mixers,
making this entire family of downconverters ideal for
applications where a common PCB layout is used for
multiple frequency bands.

The MAX19996A is available in a compact 5mm x 5mm,
20-pin thin QFN with an exposed pad. Electrical perfor­mance is guaranteed over the extended -40°C to
+85°C temperature range.

Applications

2.3GHz WCS Base Stations

2.5GHz WiMAX and LTE Base Stations

2.7GHz MMDS Base Stations

3.5GHz WiMAX and LTE Base Stations

Fixed Broadband Wireless Access

Wireless Local Loop

Private Mobile Radios

Military Systems

Features

♦ 2000MHz to 3900MHz RF Frequency Range

♦ 2100MHz to 4000MHz LO Frequency Range

♦ 50MHz to 500MHz IF Frequency Range

♦ 8.7dB Conversion Gain

♦ 9.8dB Noise Figure

♦ +24.5dBm Typical Input IP3

♦ 11dBm Typical Input 1dB Compression Point

♦ 67dBc Typical 2LO-2RF Spurious Rejection at

P

RF

= -10dBm

♦ Integrated LO Buffer

♦ Integrated RF and LO Baluns for Single-Ended

Inputs

♦ Low -3dBm to +3dBm LO Drive

♦ Pin Compatible with the MAX19996 2000MHz to

3000MHz Mixer

♦ Pin Similar with the MAX9993/MAX9994/MAX9996

Series of 1700MHz to 2200MHz Mixers and the
MAX9984/MAX9986/MAX9986A Series of 400MHz
to 1000MHz Mixers

♦ Single 5.0V or 3.3V Supply

♦ External Current-Setting Resistors Provide Option

for Operating Device in Reduced-Power/Reduced­Performance Mode

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

________________________________________________________________

Maxim Integrated Products

1

Ordering Information

19-4402; Rev 1; 5/09

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.

PART TEMP RANGE PIN-PACKAGE

MAX19996AETP+ -40°C to +85°C

20 Thin QFN-EP*

-40°C to +85°C

20 Thin QFN-EP*

WiMAX is a trademark of WiMAX Forum.

Pin Configuration/Functional Diagram appears at end of
data sheet.

+

Denotes a lead(Pb)-free/RoHS-compliant package.

*

EP = Exposed pad.

T = Tape and reel.

MAX19996AETP+T

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

VCCto GND...........................................................-0.3V to +5.5V

IF+, IF-, LO to GND ....................................-0.3V to (V

CC

+ 0.3V)

RF, LO Input Power ........................................................+12dBm

RF, LO Current (RF and LO is DC shorted to GND

through a balun)...............................................................50mA

Continuous Power Dissipation (Note 1) ...............................5.0W

θ

JA

(Notes 2, 3)..............................................................+38°C/W

θ

JC

(Notes 1, 3)................................................................13°C/W

Operating Case Temperature

Range (Note 4).........................................T

C

= -40°C to +85°C

Junction Temperature......................................................+150°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, VCC= 4.75V to 5.25V, no input AC signals. TC= -40°C to +85°C, unless otherwise noted. Typical values

are at V

CC

= 5.0V, TC= +25°C, all parameters are production tested.)

3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, VCC= 3.0V to 3.6V, no input AC signals. TC= -40°C to +85°C, unless otherwise noted. Typical values are

at V

CC

= 3.3V, TC= +25°C, parameters are guaranteed by design and not production tested, unless otherwise noted.)

Note 1: Based on junction temperature TJ= TC+ (θJCx VCCx ICC). This formula can be used when the temperature of the exposed

pad is known while the device is soldered down to a PCB. See the

Applications Information

section for details. The junction

temperature must not exceed +150°C.

Note 2: Junction temperature T

J

= TA+ (θJAx VCCx ICC). This formula can be used when the ambient temperature of the PCB is

known. The junction temperature must not exceed +150°C.

Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-

layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial

.

Note 4: T

C

is the temperature on the exposed pad of the package. TAis the ambient temperature of the device and PCB.

Supply Voltage V

Supply Current I

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

CC

CC

4.75 5.0 5.25 V

230 245 mA

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Supply Voltage V

Supply Current I

CC

CC

Total supply current, VCC = 3.3V 150 mA

3.0 3.3 3.6 V

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

_______________________________________________________________________________________ 3

RECOMMENDED AC OPERATING CONDITIONS

5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 2300MHz TO 2900MHz,
HIGH-SIDE LO INJECTION

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources, P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fIF= 300MHz, fLO= 2600MHz to 3200MHz, fRF< fLO,

T

C

= -40°C to +85°C. Typical values are for TC= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 2600MHz, fLO= 2900MHz, fIF= 300MHz.

All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

RF Frequency Range

LO Frequency f

IF Frequency f

LO Drive P

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Typical Application Circuit with C1 = 8.2pF,

f

RF

LO

see Table 1 for details (Note 5)

Typical Application Circuit with C1 = 1.5pF,
see Table 1 for details (Note 5)

(Note 5) 2100 4000 MHz

Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the Typical
Application Circuit, IF matching
components affect the IF frequency range
(Note 5)

IF

Using Mini-Circuits TC4-1W-7A 4:1
transformer as defined in the Typical
Application Circuit, IF matching
components affect the IF frequency range
(Note 5)

LO

2000 3000

3000 3900

100 500

50 250

-3 0 +3 dBm

Small-Signal Conversion Gain

Gain Variation vs. Frequency ΔG

Conversion Gain Temperature
Coefficient

Single Sideband Noise Figure NF

Noise Figure Temperature
Coefficient

Noise Figure Under Blocking NF

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

f

= 2300MHz to 2900MHz, TC = +25°C

TC

TC

RF

(Note 7)

fRF = 2305MHz to 2360MHz 0.1

fRF = 2500MHz to 2570MHz 0.1

fRF = 2570MHz to 2620MHz 0.1

C

fRF = 2500MHz to 2690MHz 0.2

fRF = 2700MHz to 2900MHz 0.3

TC = -40°C to +85°C -0.012 dB/°C

CG

No blockers present 9.8 12

SSB

f

= 2600M H z, f

R F

= + 5.0V , TC = + 25°C , no b l ocker s p r esent

V

C C

fRF = 2300M H z to 2900M H z, si ng l e si d eb and ,

NF

no b l ocker s p r esent, T

+8dBm blocker tone applied to RF port,

= 2600MHz, fLO = 2900MHz,

f

RF

B

f

BLOCKER

V

CC

= 2400MHz, PLO = 0dBm,

= +5.0V, TC = +25°C (Note 8)

= 300M H z, P

I F

= - 40°C to + 85°C

C

= 0d Bm ,

L O

7.9 8.7 9.2 dB

9.8 10.5

0.018 dB/°C

18 22 dB

MHz

MHz

dB

dB

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

4 _______________________________________________________________________________________

5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 2300MHz TO 2900MHz,
HIGH-SIDE LO INJECTION (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources, P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fIF= 300MHz, fLO= 2600MHz to 3200MHz, fRF< fLO,

T

C

= -40°C to +85°C. Typical values are for TC= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 2600MHz, fLO= 2900MHz, fIF= 300MHz.

All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

Input 1dB Compression Point IP

Third-Order Input Intercept Point IIP3

IIP3 Variation with T

2LO-2RF Spur Rejection 2 x 2 f

3LO-3RF Spur Rejection 3 x 3 f

RF Input Return Loss RL

LO Input Return Loss RL

IF Output Impedance Z

IF Output Return Loss RL

RF-to-IF Isolation PLO = +3dBm (Note 7) 27 30 dB

LO Leakage at RF Port P

2LO Leakage at RF Port PLO = +3dBm -29.7 dBm

LO Leakage at IF Port PLO = +3dBm (Note 7) -28.4 dBm

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

1dB

C

TC = +25°C (Note 9) 9.5 11

fRF = 2600MHz TC = +25°C (Notes 7, 9) 10 11

f

- f

RF1

T

C

fRF = 2300M H z to 2900MH z, f
P

RF1

SPUR

SPUR

LO on and IF terminated into a matched

RF

impedance

RF and IF terminated into a matched

LO

impedance

Nominal differential impedance at the IC’s

IF

IF outputs

RF terminated into 50Ω, LO
driven by 50Ω source, IF
transformed to 50Ω using
external components
shown in the Typical

IF

Application Circuit; see the
Typical Operating
Characteristics for

performance vs. inductor
values

LO

= 1MHz, P

RF2

= +25°C (Note 7)

= P

= - 5d Bm , TC = - 40°C to + 85°C

RF2

= fLO - 150MHz

= fLO - 100MHz

= +3dBm -28.6 -22.8 dBm

RF1

= P

= -5dBm,

RF2

- f

RF1

= 1M H z,

RF2

PRF = -10dBm 60 67

= -5dBm 55 62

P

RF

PRF = -10dBm 75 85

= -5dBm 65 75

P

RF

fIF = 450MHz,
L1 = L2 =
120nH

fIF = 350MHz,
L1 = L2 =
270nH

f

= 300MHz,

IF

L1 = L2 =
390nH

22.5 24.5 dBm

±0.3 dB

17.5 dB

19.5 dB

200 Ω

25

25

25

dBm

dBc

dBc

dB

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

_______________________________________________________________________________________ 5

3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 2300MHz TO 2900MHz,
HIGH-SIDE LO INJECTION

(

Typical Application Circuit

with tuning elements outlined in Table 1, RF and LO ports are driven from 50Ω sources. Typical values

are for T

C

= +25°C, VCC= 3.3V, PLO= 0dBm, fRF= 2600MHz, fLO= 2900MHz, fIF= 300MHz, unless otherwise noted.) (Note 6)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Small-Signal Conversion Gain G

Gain Variation vs. Frequency ΔG

Conversion Gain Temperature
Coefficient

Single Sideband Noise Figure NF

Noise Figure Temperature
Coefficient

Input 1dB Compression Point IP

Third-Order Input Intercept Point IIP3

IIP3 Variation with T

2LO-2RF Spur Rejection 2 x 2 f

3LO-3RF Spur Rejection 3 x 3 f

RF Input Return Loss RL

LO Input Return Loss RL

IF Output Impedance Z

C

fRF = 2300MHz to 2900MHz, any 100MHz

C

band

TC

SSB

TC

1dB

C

TC = -40°C to +85°C -0.012 dB/°C

CG

No blockers present 9.6 dB

Single sideband, no blockers present,

NF

T

= -40°C to +85°C

C

(Note 9) 7.75 dBm

f

= 2600MHz, f

RF1

= P

= P

= f

= f

= -5dBm

RF2

= -5dBm,

RF2

- 150MHz

LO

- 100MHz

LO

P

RF1

f

= 2600MHz, f

RF1

P

RF1

= -40°C to +85°C

T

C

SPUR

SPUR

LO on and IF terminated into a matched

RF

impedance

RF and IF terminated into a matched

LO

impedance

Nominal differential impedance at the IC’s

IF

IF outputs

= 2601MHz,

RF2

= 2601MHz,

RF2

PRF = -10dBm 64

= -5dBm 59

P

RF

PRF = -10dBm 74

P

= -5dBm 64

RF

8.3 dB

0.15 dB

0.018 dB/°C

19.7 dBm

±0.5 dB

17.5 dB

19.5 dB

200 Ω

dBc

dBc

RF terminated into 50Ω, LO
driven by 50Ω source, IF
transformed to 50Ω using
external components

IF Output Return Loss RL

RF-to-IF Isolation fRF = 2300MHz to 2900MHz, PLO = +3dBm 38 dB

LO Leakage at RF Port fLO = 2600MHz to 3200MHz, PLO = +3dBm -30 dBm

2LO Leakage at RF Port fLO = 2600MHz to 3200MHz, PLO = +3dBm -31 dBm

LO Leakage at IF Port fLO = 2600MHz to 3200MHz, PLO = +3dBm -34 dBm

shown in the Typical

IF

Application Circuit; see the
Typical Operating
Characteristics for

performance vs. inductor
values

fIF = 450MHz,
L1 = L2 =
120nH

fIF = 350MHz,
L1 = L2 =
270nH

= 300MHz,

f

IF

L1 = L2 =
390nH

25

25

25

dB

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

6 _______________________________________________________________________________________

5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 2300MHz TO 2900MHz,
LOW-SIDE LO INJECTION

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources. P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fIF= 300MHz, fLO= 2000MHz to 2600MHz, fRF> fLO,

T

C

= -40°C to +85°C. Typical values are for TC= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 2600MHz, fLO= 2300MHz, fIF= 300MHz, all

parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

Small-Signal Conversion Gain G

Gain Variation vs. Frequency ΔG

Conversion Gain Temperature
Coefficient

Single Sideband Noise Figure NF

Noise Figure Temperature
Coefficient

Input 1dB Compression Point IP

Third-Order Input Intercept Point IIP3

IIP3 Variation with T

2RF-2LO Spur Rejection 2 x 2 f

3RF-3LO Spur Rejection 3 x 3 f

RF Input Return Loss RL

LO Input Return Loss RL

IF Output Impedance Z

IF Output Return Loss RL

RF-to-IF Isolation fRF = 2600MHz, PLO = +3dBm 29 36 dB

LO Leakage at RF Port fLO = 1800MHz to 2900MHz, PLO = +3dBm -28 -20 dBm

2LO Leakage at RF Port fLO = 1800MHz to 2900MHz, PLO = +3dBm -29 -19 dBm

LO Leakage at IF Port fLO = 1800MHz to 2900MHz, PLO = +3dBm -24 dBm

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

fRF = 2300MHz to 2900MHz, TC = +25°C

C

(Note 7)
fRF = 2300MHz to 2900MHz, any 100MHz

C

band

TC

TC

1dB

C

TC = -40°C to +85°C -0.012 dB/°C

CG

No blockers present 9.5 12.5

fRF = 2600MHz, fIF = 300MHz,

SSB

P

= 0dBm, VCC = +5.0V, TC = +25°C,

LO

no blockers present

Single sideband, no blockers present,

NF

RF

LO

IF

IF

= -40°C to +85°C

T

C

TC = +25°C (Note 9) 9.5 10.7 dBm

f

- f

RF1

T

C

fRF = 2300MHz to 2900MHz, P

-5dBm, T

SPUR

SPUR

LO on and IF terminated into a matched
impedance
RF and IF terminated into a matched
impedance

Nominal differential impedance at the IC’s
IF outputs

RF terminated into 50Ω, LO
driven by 50Ω source, IF
transformed to 50Ω using
external components shown
in the Typical Application

Circuit; see the Typical
Operating Characteristics

for performance vs. inductor
values

= 1MHz, P

RF2

= +25°C (Note 7)

= -40°C to +85°C

C

= fLO + 150MHz

= fLO + 100MHz

RF1

= P

= -5dBm,

RF2

= P

RF1

RF2

PRF = -10dBm 63 68

P

= -5dBm 58 63

RF

PRF = -10dBm 79 84

P

= -5dBm 69 74

RF

fIF = 450MHz,
L1 = L2 =
120nH

fIF = 350MHz,
L1 = L2 =
270nH

f

= 300MHz,

IF

L1 = L2 =
390nH

8.2 8.9 9.5 dB

0.1 dB

9.5 10.5

0.018 dB/°C

22 24.05 dBm

=

±0.5 dB

19 dB

18 dB

200 Ω

25

25

25

dB

dBc

dBc

dB

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

_______________________________________________________________________________________ 7

5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 3100MHz TO 3900MHz,
LOW-SIDE LO INJECTION

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources, P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 3100MHz to 3900MHz, fIF= 300MHz, fLO= 2800MHz to 3600MHz, fRF> fLO,

T

C

= -40°C to +85°C. Typical values are for TC= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 3500MHz, fLO= 3200MHz, fIF= 300MHz.

All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

Small-Signal Conversion Gain G

Gain Variation vs. Frequency ΔG

Conversion Gain Temperature
Coefficient

Single Sideband Noise Figure NF

Noise Figure Temperature
Coefficient

Noise Figure Under Blocking NF

Input 1dB Compression Point IP

Third-Order Input Intercept Point IIP3

IIP3 Variation with T

2RF-2LO Spur Rejection 2 x 2 f

3RF-3LO Spur Rejection 3 x 3 f

RF Input Return Loss RL

LO Input Return Loss RL

IF Output Impedance Z

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

TC = +25°C (Note 7) 7.5 8.0 8.5 dB

C

fRF = 3450MHz to 3750MHz, any 100MHz
band

C

fRF = 3450MHz to 3750MHz, any 200MHz
band

TC

TC

1dB

C

TC = -40°C to +85°C -0.012 dB/°C

CG

No blockers present 10.5 13.5

SSB

f

= 3500M H z, f

R F

V

= + 5.0V , TC = + 25°C , no b l ocker s p r esent

C C

fRF = 3100M H z to 3900M H z, si ng l e si d eb and ,

NF

no b l ocker s p r esent, T

+8dBm blocker tone applied to RF port,

= 3500MHz, fLO = 3200MHz,

f

RF

B

f

BLOCKER

V

CC

fRF = 3500MHz (Note 9) 10 12 dBm

f

RF1

(Note 7)

fRF = 3100MHz to 3900MHz,
f

IF

P

RF1

SPUR

SPUR

LO on and IF terminated into a matched

RF

impedance

RF and IF terminated into a matched

LO

impedance

Nominal differential impedance at the IC’s

IF

IF outputs

= 3750MHz, PLO = 0dBm,

= +5.0V, TC = +25°C (Note 8)

- f

RF2

= 300MHz, f

= P

RF2

= fLO + 150MHz

= fLO + 100MHz

= 300M H z, P

I F

= - 40°C to + 85°C

C

= 1MHz, P

RF1

= -5dBm, TC = -40°C to +85°C

- f

RF1

= 1MHz,

RF2

= P

= 0d Bm ,

L O

= -5dBm

RF2

PRF = -10dBm 60 69

P

= -5dBm 55 64

RF

PRF = -10dBm 78 86

P

= -5dBm 68 76

RF

23 25 dBm

0.15

0.3

10.5 11.6

0.018 dB/°C

18.7 21 dB

±0.3 dB

20 dB

16.5 dB

200 Ω

dB

dB

dBc

dBc

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

8 _______________________________________________________________________________________

5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 3100MHz TO 3900MHz,
LOW-SIDE LO INJECTION (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources, P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 3100MHz to 3900MHz, fIF= 300MHz, fLO= 2800MHz to 3600MHz, fRF> fLO,

T

C

= -40°C to +85°C. Typical values are for TC= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 3500MHz, fLO= 3200MHz, fIF= 300MHz.

All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 3100MHz TO 3900MHz,
HIGH-SIDE LO INJECTION

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources, Typical values are for T

C

= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 3500MHz, fLO= 3800MHz, fIF= 300MHz. Parameters

are guaranteed by design and not production tested.) (Note 6)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

IF Output Return Loss RL

RF-to-IF Isolation fRF = 2600MHz P

LO Leakage at RF Port fLO = 2800MHz to 3600MHz P

2LO Leakage at RF Port P

LO Leakage at IF Port PLO = +3dBm (Note 7) -29.5 -20 dBm

RF terminated into 50Ω, LO
driven by 50Ω source, IF
transformed to 50Ω using
external components
shown in the Typical

IF

Application Circuit; see the
Typical Operating
Characteristics for

performance vs. inductor
values

= +3dBm -27 dBm

LO

= +3dBm (Note 7) 23 27 dB

LO

fIF = 450MHz,
L1 = L2 =
120nH

fIF = 350MHz,
L1 = L2 =
270nH

= 300MHz,

f

IF

L1 = L2 =
390nH

= +3dBm -31 -20 dBm

LO

25

25

25

dB

Small-Signal Conversion Gain G

Gain Variation vs. Frequency ΔG

Conversion Gain Temperature
Coefficient

Single Sideband Noise Figure NF

Noise Figure Temperature
Coefficient

Input 1dB Compression Point IP

Third-Order Input Intercept Point IIP3

IIP3 Variation with T

2LO-2RF Spur Rejection 2 x 2 f

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

C

fRF = 3450MHz to 3750MHz, any 100MHz
band

C

fRF = 3450MHz to 3750MHz, any 200MHz
band

TC

TC

1dB

C

TC = -40°C to +85°C -0.012 dB/°C

CG

No blockers present 10.9 dB

SSB

Single sideband, no blockers present,

NF

T

= -40°C to +85°C

C

(Note 9) 12.4 dBm

f

= 3500MHz, f

RF1

P

= P

RF1

f

= 3500MHz, f

RF1

P

= P

RF1

= f

SPUR

= -5dBm

RF2

= -5dBm, TC = -40°C to +85°C

RF2

- 150MHz

LO

= 3501MHz,

RF2

= 3501MHz,

RF2

PRF = -10dBm 69

= -5dBm 64

P

RF

7.6 dB

0.15

0.3

0.018 dB/°C

24.7 dBm

±0.5 dB

dB

dBc

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

_______________________________________________________________________________________ 9

+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 3100MHz TO 3900MHz,
HIGH-SIDE LO INJECTION (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources, Typical values are for T

C

= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 3500MHz, fLO= 3800MHz, fIF= 300MHz. Parameters

are guaranteed by design and not production tested.) (Note 6)

Note 5: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See

the

Typical Operating Characteristics

.

Note 6: All limits reflect losses of external components, including a 0.8dB loss at f

IF

= 300MHz due to the 4:1 impedance trans-

former. Output measurements were taken at IF outputs of the

Typical Application Circuit

.

Note 7: 100% production tested for functional performance.
Note 8: Measured with external LO source noise filtered so that the noise floor is -174dBm/Hz. This specification reflects the effects

of all SNR degradations in the mixer including the LO noise, as defined in Application Note 2021:

Specifications and

Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers

.

Note 9: Maximum reliable continuous input power applied to the RF port of this device is +12dBm from a 50Ω source.

3LO-3RF Spur Rejection 3 x 3 f

RF Input Return Loss RL

LO Input Return Loss RL

IF Output Impedance Z

IF Output Return Loss RL

RF-to-IF Isolation fRF = 3100MHz to 3700MHz, PLO = +3dBm 26.6 dB

LO Leakage at RF Port fLO = 3400MHz to 4000MHz, PLO = +3dBm -38 dBm

2LO Leakage at RF Port fLO = 3400MHz to 4000MHz, PLO = +3dBm -13.5 dBm

LO Leakage at IF Port fLO = 3400MHz to 4000MHz, PLO = +3dBm -27 dBm

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

= fLO - 100MHz

SPUR

LO on and IF terminated into a matched

RF

impedance

RF and IF terminated into a matched

LO

impedance

Nominal differential impedance at the IC’s

IF

IF outputs

RF terminated into 50Ω, LO
driven by 50Ω source, IF
transformed to 50Ω using
external components
shown in the Typical

IF

Application Circuit; see the
Typical Operating
Characteristics for

performance vs. inductor
values

PRF = -10dBm 90

= -5dBm 80

P

RF

22 dB

16.3 dB

200 Ω

fIF = 450MHz,
L1 = L2 =
120nH

fIF = 350MHz,
L1 = L2 =
270nH

= 300MHz,

f

IF

L1 = L2 =
390nH

25

25

25

dBc

dB

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

10 ______________________________________________________________________________________

Typical Operating Characteristics

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 2000MHz to 3000MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

CONVERSION GAIN vs. RF FREQUENCY

MAX19996A toc01

RF FREQUENCY (MHz)

CONVERSION GAIN (dB)

2800260024002200

7

8

9

10

11

6

2000 3000

TC = -30°C

TC = +25°C

TC = +85°C

CONVERSION GAIN vs. RF FREQUENCY

MAX19996A toc02

RF FREQUENCY (MHz)

CONVERSION GAIN (dB)

2800260024002200

7

8

9

10

11

6

2000 3000

PLO = -3dBm, 0dBm, +3dBm

INPUT IP3 vs. RF FREQUENCY

MAX19996A toc04

RF FREQUENCY (MHz)

INPUT IP3 (dBm)

2800260024002200

23

24

25

26

22

2000 3000

TC = -30°C

TC = +25°C

TC = +85°C

PRF = -5dBm/TONE

INPUT IP3 vs. RF FREQUENCY

MAX19996A toc05

RF FREQUENCY (MHz)

INPUT IP3 (dBm)

2800260024002200

23

24

25

26

22

2000 3000

PRF = -5dBm/TONE

PLO = -3dBm, 0dBm, +3dBm

CONVERSION GAIN vs. RF FREQUENCY

11

10

9

8

CONVERSION GAIN (dB)

7

6

2000 3000

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

26

25

24

INPUT IP3 (dBm)

23

22

2000 3000

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

PRF = -5dBm/TONE

MAX19996A toc03

2800260024002200

MAX19996A toc06

2800260024002200

NOISE FIGURE vs. RF FREQUENCY

12

TC = +85°C

11

10

9

NOISE FIGURE (dB)

8

7

TC = -30°C

2000 3000

TC = +25°C

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

12

11

MAX19996A toc07

10

9

NOISE FIGURE (dB)

8

2800260024002200

7

2000 3000

PLO = -3dBm, 0dBm, +3dBm

2800260024002200

RF FREQUENCY (MHz)

MAX19996A toc08

NOISE FIGURE vs. RF FREQUENCY

12

11

10

9

NOISE FIGURE (dB)

8

7

2000 3000

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

MAX19996A toc09

2800260024002200

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________

11

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 2000MHz to 3000MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

2LO-2RF RESPONSE vs. RF FREQUENCY

90

80

70

2LO-2RF RESPONSE (dBc)

60

TC = -30°C, +25°C, +85°C

50

2000 3000

RF FREQUENCY (MHz)

3LO-3RF RESPONSE vs. RF FREQUENCY

85

80

2LO-2RF RESPONSE vs. RF FREQUENCY

90

80

70

2LO-2RF RESPONSE (dBc)

60

VCC = 4.75V, 5.0V, 5.25V

50

2000 3000

RF FREQUENCY (MHz)

PRF = -5dBm

3LO-3RF RESPONSE vs. RF FREQUENCY

85

80

PRF = -5dBm

2800260024002200

PRF = -5dBm

2800260024002200

PRF = -5dBm

90

MAX19996A toc10

MAX19996A toc13

80

70

2LO-2RF RESPONSE (dBc)

60

50

85

80

2LO-2RF RESPONSE vs. RF FREQUENCY

PRF = -5dBm

PLO = +3dBm

PLO = 0dBm

PLO = -3dBm

2000 3000

RF FREQUENCY (MHz)

2800260024002200

3LO-3RF RESPONSE vs. RF FREQUENCY

PRF = -5dBm

MAX19996A toc11

MAX19996A toc14

MAX19996A toc12

MAX19996A toc15

75

3LO-3RF RESPONSE (dBc)

70

65

2000 3000

13

12

(dBm)

1dB

11

INPUT P

10

9

2000 3000

TC = -30°C, +25°C, +85°C

RF FREQUENCY (MHz)

INPUT P

TC = -30°C

vs. RF FREQUENCY

1dB

TC = +85°C

RF FREQUENCY (MHz)

TC = +25°C

75

3LO-3RF RESPONSE (dBc)

70

MAX19996A toc16

65

13

12

(dBm)

1dB

11

INPUT P

10

2800260024002200

2800260024002200

PLO = -3dBm, 0dBm, +3dBm

2000 3000

RF FREQUENCY (MHz)

INPUT P

9

2000 3000

vs. RF FREQUENCY

1dB

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

2800260024002200

2800260024002200

75

3LO-3RF RESPONSE (dBc)

70

65

2000 3000

13

MAX19996A toc17

12

(dBm)

1dB

11

INPUT P

10

9

2000 3000

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

INPUT P

1dB

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

2800260024002200

vs. RF FREQUENCY

MAX19996A toc18

2800260024002200