MAXIM MAX19996A Technical data

General Description

The MAX19996A single, high-linearity downconversion
mixer provides 8.7dB conversion gain, +24.5dBm IIP3,
and 9.8dB noise figure for 2000MHz to 3900MHz WCS,
LTE, WiMAX™, and MMDS wireless infrastructure appli­cations. With an ultra-wide LO frequency range of
2100MHz to 4000MHz, the MAX19996A can be used in
either low-side or high-side LO injection architectures
for virtually all 2.5GHz and 3.5GHz applications. For a

2.5GHz variant tuned specifically for low-side injection,
refer to the MAX19996 data sheet.

In addition to offering excellent linearity and noise
performance, the MAX19996A also yields a high level
of component integration. This device includes a dou­ble-balanced passive mixer core, an IF amplifier, and
an LO buffer. On-chip baluns are also integrated to
allow for single-ended RF and LO inputs. The
MAX19996A requires a nominal LO drive of 0dBm,
and supply current is typically 230mA at V

CC

= 5.0V,

or 150mA at VCC= 3.3V.

The MAX19996A is pin compatible with the MAX19996
2000MHz to 3000MHz mixer. The device is also pin
similar with the MAX9984/MAX9986/MAX9986A
400MHz to 1000MHz mixers and the MAX9993/
MAX9994/MAX9996 1700MHz to 2200MHz mixers,
making this entire family of downconverters ideal for
applications where a common PCB layout is used for
multiple frequency bands.

The MAX19996A is available in a compact 5mm x 5mm,
20-pin thin QFN with an exposed pad. Electrical perfor­mance is guaranteed over the extended -40°C to
+85°C temperature range.

Applications

2.3GHz WCS Base Stations

2.5GHz WiMAX and LTE Base Stations

2.7GHz MMDS Base Stations

3.5GHz WiMAX and LTE Base Stations

Fixed Broadband Wireless Access

Wireless Local Loop

Private Mobile Radios

Military Systems

Features

♦ 2000MHz to 3900MHz RF Frequency Range

♦ 2100MHz to 4000MHz LO Frequency Range

♦ 50MHz to 500MHz IF Frequency Range

♦ 8.7dB Conversion Gain

♦ 9.8dB Noise Figure

♦ +24.5dBm Typical Input IP3

♦ 11dBm Typical Input 1dB Compression Point

♦ 67dBc Typical 2LO-2RF Spurious Rejection at

P

RF

= -10dBm

♦ Integrated LO Buffer

♦ Integrated RF and LO Baluns for Single-Ended

Inputs

♦ Low -3dBm to +3dBm LO Drive

♦ Pin Compatible with the MAX19996 2000MHz to

3000MHz Mixer

♦ Pin Similar with the MAX9993/MAX9994/MAX9996

Series of 1700MHz to 2200MHz Mixers and the
MAX9984/MAX9986/MAX9986A Series of 400MHz
to 1000MHz Mixers

♦ Single 5.0V or 3.3V Supply

♦ External Current-Setting Resistors Provide Option

for Operating Device in Reduced-Power/Reduced­Performance Mode

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

________________________________________________________________

Maxim Integrated Products

1

Ordering Information

19-4402; Rev 1; 5/09

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.

PART TEMP RANGE PIN-PACKAGE

MAX19996AETP+ -40°C to +85°C

20 Thin QFN-EP*

-40°C to +85°C

20 Thin QFN-EP*

WiMAX is a trademark of WiMAX Forum.

Pin Configuration/Functional Diagram appears at end of
data sheet.

+

Denotes a lead(Pb)-free/RoHS-compliant package.

*

EP = Exposed pad.

T = Tape and reel.

MAX19996AETP+T

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

VCCto GND...........................................................-0.3V to +5.5V

IF+, IF-, LO to GND ....................................-0.3V to (V

CC

+ 0.3V)

RF, LO Input Power ........................................................+12dBm

RF, LO Current (RF and LO is DC shorted to GND

through a balun)...............................................................50mA

Continuous Power Dissipation (Note 1) ...............................5.0W

θ

JA

(Notes 2, 3)..............................................................+38°C/W

θ

JC

(Notes 1, 3)................................................................13°C/W

Operating Case Temperature

Range (Note 4).........................................T

C

= -40°C to +85°C

Junction Temperature......................................................+150°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, VCC= 4.75V to 5.25V, no input AC signals. TC= -40°C to +85°C, unless otherwise noted. Typical values

are at V

CC

= 5.0V, TC= +25°C, all parameters are production tested.)

3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, VCC= 3.0V to 3.6V, no input AC signals. TC= -40°C to +85°C, unless otherwise noted. Typical values are

at V

CC

= 3.3V, TC= +25°C, parameters are guaranteed by design and not production tested, unless otherwise noted.)

Note 1: Based on junction temperature TJ= TC+ (θJCx VCCx ICC). This formula can be used when the temperature of the exposed

pad is known while the device is soldered down to a PCB. See the

Applications Information

section for details. The junction

temperature must not exceed +150°C.

Note 2: Junction temperature T

J

= TA+ (θJAx VCCx ICC). This formula can be used when the ambient temperature of the PCB is

known. The junction temperature must not exceed +150°C.

Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-

layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial

.

Note 4: T

C

is the temperature on the exposed pad of the package. TAis the ambient temperature of the device and PCB.

Supply Voltage V

Supply Current I

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

CC

CC

4.75 5.0 5.25 V

230 245 mA

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Supply Voltage V

Supply Current I

CC

CC

Total supply current, VCC = 3.3V 150 mA

3.0 3.3 3.6 V

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

_______________________________________________________________________________________ 3

RECOMMENDED AC OPERATING CONDITIONS

5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 2300MHz TO 2900MHz,
HIGH-SIDE LO INJECTION

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources, P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fIF= 300MHz, fLO= 2600MHz to 3200MHz, fRF< fLO,

T

C

= -40°C to +85°C. Typical values are for TC= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 2600MHz, fLO= 2900MHz, fIF= 300MHz.

All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

RF Frequency Range

LO Frequency f

IF Frequency f

LO Drive P

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Typical Application Circuit with C1 = 8.2pF,

f

RF

LO

see Table 1 for details (Note 5)

Typical Application Circuit with C1 = 1.5pF,
see Table 1 for details (Note 5)

(Note 5) 2100 4000 MHz

Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the Typical
Application Circuit, IF matching
components affect the IF frequency range
(Note 5)

IF

Using Mini-Circuits TC4-1W-7A 4:1
transformer as defined in the Typical
Application Circuit, IF matching
components affect the IF frequency range
(Note 5)

LO

2000 3000

3000 3900

100 500

50 250

-3 0 +3 dBm

Small-Signal Conversion Gain

Gain Variation vs. Frequency ΔG

Conversion Gain Temperature
Coefficient

Single Sideband Noise Figure NF

Noise Figure Temperature
Coefficient

Noise Figure Under Blocking NF

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

f

= 2300MHz to 2900MHz, TC = +25°C

TC

TC

RF

(Note 7)

fRF = 2305MHz to 2360MHz 0.1

fRF = 2500MHz to 2570MHz 0.1

fRF = 2570MHz to 2620MHz 0.1

C

fRF = 2500MHz to 2690MHz 0.2

fRF = 2700MHz to 2900MHz 0.3

TC = -40°C to +85°C -0.012 dB/°C

CG

No blockers present 9.8 12

SSB

f

= 2600M H z, f

R F

= + 5.0V , TC = + 25°C , no b l ocker s p r esent

V

C C

fRF = 2300M H z to 2900M H z, si ng l e si d eb and ,

NF

no b l ocker s p r esent, T

+8dBm blocker tone applied to RF port,

= 2600MHz, fLO = 2900MHz,

f

RF

B

f

BLOCKER

V

CC

= 2400MHz, PLO = 0dBm,

= +5.0V, TC = +25°C (Note 8)

= 300M H z, P

I F

= - 40°C to + 85°C

C

= 0d Bm ,

L O

7.9 8.7 9.2 dB

9.8 10.5

0.018 dB/°C

18 22 dB

MHz

MHz

dB

dB

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

4 _______________________________________________________________________________________

5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 2300MHz TO 2900MHz,
HIGH-SIDE LO INJECTION (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources, P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fIF= 300MHz, fLO= 2600MHz to 3200MHz, fRF< fLO,

T

C

= -40°C to +85°C. Typical values are for TC= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 2600MHz, fLO= 2900MHz, fIF= 300MHz.

All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

Input 1dB Compression Point IP

Third-Order Input Intercept Point IIP3

IIP3 Variation with T

2LO-2RF Spur Rejection 2 x 2 f

3LO-3RF Spur Rejection 3 x 3 f

RF Input Return Loss RL

LO Input Return Loss RL

IF Output Impedance Z

IF Output Return Loss RL

RF-to-IF Isolation PLO = +3dBm (Note 7) 27 30 dB

LO Leakage at RF Port P

2LO Leakage at RF Port PLO = +3dBm -29.7 dBm

LO Leakage at IF Port PLO = +3dBm (Note 7) -28.4 dBm

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

1dB

C

TC = +25°C (Note 9) 9.5 11

fRF = 2600MHz TC = +25°C (Notes 7, 9) 10 11

f

- f

RF1

T

C

fRF = 2300M H z to 2900MH z, f
P

RF1

SPUR

SPUR

LO on and IF terminated into a matched

RF

impedance

RF and IF terminated into a matched

LO

impedance

Nominal differential impedance at the IC’s

IF

IF outputs

RF terminated into 50Ω, LO
driven by 50Ω source, IF
transformed to 50Ω using
external components
shown in the Typical

IF

Application Circuit; see the
Typical Operating
Characteristics for

performance vs. inductor
values

LO

= 1MHz, P

RF2

= +25°C (Note 7)

= P

= - 5d Bm , TC = - 40°C to + 85°C

RF2

= fLO - 150MHz

= fLO - 100MHz

= +3dBm -28.6 -22.8 dBm

RF1

= P

= -5dBm,

RF2

- f

RF1

= 1M H z,

RF2

PRF = -10dBm 60 67

= -5dBm 55 62

P

RF

PRF = -10dBm 75 85

= -5dBm 65 75

P

RF

fIF = 450MHz,
L1 = L2 =
120nH

fIF = 350MHz,
L1 = L2 =
270nH

f

= 300MHz,

IF

L1 = L2 =
390nH

22.5 24.5 dBm

±0.3 dB

17.5 dB

19.5 dB

200 Ω

25

25

25

dBm

dBc

dBc

dB

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

_______________________________________________________________________________________ 5

3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 2300MHz TO 2900MHz,
HIGH-SIDE LO INJECTION

(

Typical Application Circuit

with tuning elements outlined in Table 1, RF and LO ports are driven from 50Ω sources. Typical values

are for T

C

= +25°C, VCC= 3.3V, PLO= 0dBm, fRF= 2600MHz, fLO= 2900MHz, fIF= 300MHz, unless otherwise noted.) (Note 6)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Small-Signal Conversion Gain G

Gain Variation vs. Frequency ΔG

Conversion Gain Temperature
Coefficient

Single Sideband Noise Figure NF

Noise Figure Temperature
Coefficient

Input 1dB Compression Point IP

Third-Order Input Intercept Point IIP3

IIP3 Variation with T

2LO-2RF Spur Rejection 2 x 2 f

3LO-3RF Spur Rejection 3 x 3 f

RF Input Return Loss RL

LO Input Return Loss RL

IF Output Impedance Z

C

fRF = 2300MHz to 2900MHz, any 100MHz

C

band

TC

SSB

TC

1dB

C

TC = -40°C to +85°C -0.012 dB/°C

CG

No blockers present 9.6 dB

Single sideband, no blockers present,

NF

T

= -40°C to +85°C

C

(Note 9) 7.75 dBm

f

= 2600MHz, f

RF1

= P

= P

= f

= f

= -5dBm

RF2

= -5dBm,

RF2

- 150MHz

LO

- 100MHz

LO

P

RF1

f

= 2600MHz, f

RF1

P

RF1

= -40°C to +85°C

T

C

SPUR

SPUR

LO on and IF terminated into a matched

RF

impedance

RF and IF terminated into a matched

LO

impedance

Nominal differential impedance at the IC’s

IF

IF outputs

= 2601MHz,

RF2

= 2601MHz,

RF2

PRF = -10dBm 64

= -5dBm 59

P

RF

PRF = -10dBm 74

P

= -5dBm 64

RF

8.3 dB

0.15 dB

0.018 dB/°C

19.7 dBm

±0.5 dB

17.5 dB

19.5 dB

200 Ω

dBc

dBc

RF terminated into 50Ω, LO
driven by 50Ω source, IF
transformed to 50Ω using
external components

IF Output Return Loss RL

RF-to-IF Isolation fRF = 2300MHz to 2900MHz, PLO = +3dBm 38 dB

LO Leakage at RF Port fLO = 2600MHz to 3200MHz, PLO = +3dBm -30 dBm

2LO Leakage at RF Port fLO = 2600MHz to 3200MHz, PLO = +3dBm -31 dBm

LO Leakage at IF Port fLO = 2600MHz to 3200MHz, PLO = +3dBm -34 dBm

shown in the Typical

IF

Application Circuit; see the
Typical Operating
Characteristics for

performance vs. inductor
values

fIF = 450MHz,
L1 = L2 =
120nH

fIF = 350MHz,
L1 = L2 =
270nH

= 300MHz,

f

IF

L1 = L2 =
390nH

25

25

25

dB

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

6 _______________________________________________________________________________________

5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 2300MHz TO 2900MHz,
LOW-SIDE LO INJECTION

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources. P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 2300MHz to 2900MHz, fIF= 300MHz, fLO= 2000MHz to 2600MHz, fRF> fLO,

T

C

= -40°C to +85°C. Typical values are for TC= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 2600MHz, fLO= 2300MHz, fIF= 300MHz, all

parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

Small-Signal Conversion Gain G

Gain Variation vs. Frequency ΔG

Conversion Gain Temperature
Coefficient

Single Sideband Noise Figure NF

Noise Figure Temperature
Coefficient

Input 1dB Compression Point IP

Third-Order Input Intercept Point IIP3

IIP3 Variation with T

2RF-2LO Spur Rejection 2 x 2 f

3RF-3LO Spur Rejection 3 x 3 f

RF Input Return Loss RL

LO Input Return Loss RL

IF Output Impedance Z

IF Output Return Loss RL

RF-to-IF Isolation fRF = 2600MHz, PLO = +3dBm 29 36 dB

LO Leakage at RF Port fLO = 1800MHz to 2900MHz, PLO = +3dBm -28 -20 dBm

2LO Leakage at RF Port fLO = 1800MHz to 2900MHz, PLO = +3dBm -29 -19 dBm

LO Leakage at IF Port fLO = 1800MHz to 2900MHz, PLO = +3dBm -24 dBm

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

fRF = 2300MHz to 2900MHz, TC = +25°C

C

(Note 7)
fRF = 2300MHz to 2900MHz, any 100MHz

C

band

TC

TC

1dB

C

TC = -40°C to +85°C -0.012 dB/°C

CG

No blockers present 9.5 12.5

fRF = 2600MHz, fIF = 300MHz,

SSB

P

= 0dBm, VCC = +5.0V, TC = +25°C,

LO

no blockers present

Single sideband, no blockers present,

NF

RF

LO

IF

IF

= -40°C to +85°C

T

C

TC = +25°C (Note 9) 9.5 10.7 dBm

f

- f

RF1

T

C

fRF = 2300MHz to 2900MHz, P

-5dBm, T

SPUR

SPUR

LO on and IF terminated into a matched
impedance
RF and IF terminated into a matched
impedance

Nominal differential impedance at the IC’s
IF outputs

RF terminated into 50Ω, LO
driven by 50Ω source, IF
transformed to 50Ω using
external components shown
in the Typical Application

Circuit; see the Typical
Operating Characteristics

for performance vs. inductor
values

= 1MHz, P

RF2

= +25°C (Note 7)

= -40°C to +85°C

C

= fLO + 150MHz

= fLO + 100MHz

RF1

= P

= -5dBm,

RF2

= P

RF1

RF2

PRF = -10dBm 63 68

P

= -5dBm 58 63

RF

PRF = -10dBm 79 84

P

= -5dBm 69 74

RF

fIF = 450MHz,
L1 = L2 =
120nH

fIF = 350MHz,
L1 = L2 =
270nH

f

= 300MHz,

IF

L1 = L2 =
390nH

8.2 8.9 9.5 dB

0.1 dB

9.5 10.5

0.018 dB/°C

22 24.05 dBm

=

±0.5 dB

19 dB

18 dB

200 Ω

25

25

25

dB

dBc

dBc

dB

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

_______________________________________________________________________________________ 7

5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 3100MHz TO 3900MHz,
LOW-SIDE LO INJECTION

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources, P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 3100MHz to 3900MHz, fIF= 300MHz, fLO= 2800MHz to 3600MHz, fRF> fLO,

T

C

= -40°C to +85°C. Typical values are for TC= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 3500MHz, fLO= 3200MHz, fIF= 300MHz.

All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

Small-Signal Conversion Gain G

Gain Variation vs. Frequency ΔG

Conversion Gain Temperature
Coefficient

Single Sideband Noise Figure NF

Noise Figure Temperature
Coefficient

Noise Figure Under Blocking NF

Input 1dB Compression Point IP

Third-Order Input Intercept Point IIP3

IIP3 Variation with T

2RF-2LO Spur Rejection 2 x 2 f

3RF-3LO Spur Rejection 3 x 3 f

RF Input Return Loss RL

LO Input Return Loss RL

IF Output Impedance Z

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

TC = +25°C (Note 7) 7.5 8.0 8.5 dB

C

fRF = 3450MHz to 3750MHz, any 100MHz
band

C

fRF = 3450MHz to 3750MHz, any 200MHz
band

TC

TC

1dB

C

TC = -40°C to +85°C -0.012 dB/°C

CG

No blockers present 10.5 13.5

SSB

f

= 3500M H z, f

R F

V

= + 5.0V , TC = + 25°C , no b l ocker s p r esent

C C

fRF = 3100M H z to 3900M H z, si ng l e si d eb and ,

NF

no b l ocker s p r esent, T

+8dBm blocker tone applied to RF port,

= 3500MHz, fLO = 3200MHz,

f

RF

B

f

BLOCKER

V

CC

fRF = 3500MHz (Note 9) 10 12 dBm

f

RF1

(Note 7)

fRF = 3100MHz to 3900MHz,
f

IF

P

RF1

SPUR

SPUR

LO on and IF terminated into a matched

RF

impedance

RF and IF terminated into a matched

LO

impedance

Nominal differential impedance at the IC’s

IF

IF outputs

= 3750MHz, PLO = 0dBm,

= +5.0V, TC = +25°C (Note 8)

- f

RF2

= 300MHz, f

= P

RF2

= fLO + 150MHz

= fLO + 100MHz

= 300M H z, P

I F

= - 40°C to + 85°C

C

= 1MHz, P

RF1

= -5dBm, TC = -40°C to +85°C

- f

RF1

= 1MHz,

RF2

= P

= 0d Bm ,

L O

= -5dBm

RF2

PRF = -10dBm 60 69

P

= -5dBm 55 64

RF

PRF = -10dBm 78 86

P

= -5dBm 68 76

RF

23 25 dBm

0.15

0.3

10.5 11.6

0.018 dB/°C

18.7 21 dB

±0.3 dB

20 dB

16.5 dB

200 Ω

dB

dB

dBc

dBc

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

8 _______________________________________________________________________________________

5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 3100MHz TO 3900MHz,
LOW-SIDE LO INJECTION (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources, P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 3100MHz to 3900MHz, fIF= 300MHz, fLO= 2800MHz to 3600MHz, fRF> fLO,

T

C

= -40°C to +85°C. Typical values are for TC= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 3500MHz, fLO= 3200MHz, fIF= 300MHz.

All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 3100MHz TO 3900MHz,
HIGH-SIDE LO INJECTION

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources, Typical values are for T

C

= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 3500MHz, fLO= 3800MHz, fIF= 300MHz. Parameters

are guaranteed by design and not production tested.) (Note 6)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

IF Output Return Loss RL

RF-to-IF Isolation fRF = 2600MHz P

LO Leakage at RF Port fLO = 2800MHz to 3600MHz P

2LO Leakage at RF Port P

LO Leakage at IF Port PLO = +3dBm (Note 7) -29.5 -20 dBm

RF terminated into 50Ω, LO
driven by 50Ω source, IF
transformed to 50Ω using
external components
shown in the Typical

IF

Application Circuit; see the
Typical Operating
Characteristics for

performance vs. inductor
values

= +3dBm -27 dBm

LO

= +3dBm (Note 7) 23 27 dB

LO

fIF = 450MHz,
L1 = L2 =
120nH

fIF = 350MHz,
L1 = L2 =
270nH

= 300MHz,

f

IF

L1 = L2 =
390nH

= +3dBm -31 -20 dBm

LO

25

25

25

dB

Small-Signal Conversion Gain G

Gain Variation vs. Frequency ΔG

Conversion Gain Temperature
Coefficient

Single Sideband Noise Figure NF

Noise Figure Temperature
Coefficient

Input 1dB Compression Point IP

Third-Order Input Intercept Point IIP3

IIP3 Variation with T

2LO-2RF Spur Rejection 2 x 2 f

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

C

fRF = 3450MHz to 3750MHz, any 100MHz
band

C

fRF = 3450MHz to 3750MHz, any 200MHz
band

TC

TC

1dB

C

TC = -40°C to +85°C -0.012 dB/°C

CG

No blockers present 10.9 dB

SSB

Single sideband, no blockers present,

NF

T

= -40°C to +85°C

C

(Note 9) 12.4 dBm

f

= 3500MHz, f

RF1

P

= P

RF1

f

= 3500MHz, f

RF1

P

= P

RF1

= f

SPUR

= -5dBm

RF2

= -5dBm, TC = -40°C to +85°C

RF2

- 150MHz

LO

= 3501MHz,

RF2

= 3501MHz,

RF2

PRF = -10dBm 69

= -5dBm 64

P

RF

7.6 dB

0.15

0.3

0.018 dB/°C

24.7 dBm

±0.5 dB

dB

dBc

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

_______________________________________________________________________________________ 9

+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—fRF= 3100MHz TO 3900MHz,
HIGH-SIDE LO INJECTION (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω

sources, Typical values are for T

C

= +25°C, VCC= 5.0V, PLO= 0dBm, fRF= 3500MHz, fLO= 3800MHz, fIF= 300MHz. Parameters

are guaranteed by design and not production tested.) (Note 6)

Note 5: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See

the

Typical Operating Characteristics

.

Note 6: All limits reflect losses of external components, including a 0.8dB loss at f

IF

= 300MHz due to the 4:1 impedance trans-

former. Output measurements were taken at IF outputs of the

Typical Application Circuit

.

Note 7: 100% production tested for functional performance.
Note 8: Measured with external LO source noise filtered so that the noise floor is -174dBm/Hz. This specification reflects the effects

of all SNR degradations in the mixer including the LO noise, as defined in Application Note 2021:

Specifications and

Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers

.

Note 9: Maximum reliable continuous input power applied to the RF port of this device is +12dBm from a 50Ω source.

3LO-3RF Spur Rejection 3 x 3 f

RF Input Return Loss RL

LO Input Return Loss RL

IF Output Impedance Z

IF Output Return Loss RL

RF-to-IF Isolation fRF = 3100MHz to 3700MHz, PLO = +3dBm 26.6 dB

LO Leakage at RF Port fLO = 3400MHz to 4000MHz, PLO = +3dBm -38 dBm

2LO Leakage at RF Port fLO = 3400MHz to 4000MHz, PLO = +3dBm -13.5 dBm

LO Leakage at IF Port fLO = 3400MHz to 4000MHz, PLO = +3dBm -27 dBm

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

= fLO - 100MHz

SPUR

LO on and IF terminated into a matched

RF

impedance

RF and IF terminated into a matched

LO

impedance

Nominal differential impedance at the IC’s

IF

IF outputs

RF terminated into 50Ω, LO
driven by 50Ω source, IF
transformed to 50Ω using
external components
shown in the Typical

IF

Application Circuit; see the
Typical Operating
Characteristics for

performance vs. inductor
values

PRF = -10dBm 90

= -5dBm 80

P

RF

22 dB

16.3 dB

200 Ω

fIF = 450MHz,
L1 = L2 =
120nH

fIF = 350MHz,
L1 = L2 =
270nH

= 300MHz,

f

IF

L1 = L2 =
390nH

25

25

25

dBc

dB

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

10 ______________________________________________________________________________________

Typical Operating Characteristics

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 2000MHz to 3000MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

CONVERSION GAIN vs. RF FREQUENCY

MAX19996A toc01

RF FREQUENCY (MHz)

CONVERSION GAIN (dB)

2800260024002200

7

8

9

10

11

6

2000 3000

TC = -30°C

TC = +25°C

TC = +85°C

CONVERSION GAIN vs. RF FREQUENCY

MAX19996A toc02

RF FREQUENCY (MHz)

CONVERSION GAIN (dB)

2800260024002200

7

8

9

10

11

6

2000 3000

PLO = -3dBm, 0dBm, +3dBm

INPUT IP3 vs. RF FREQUENCY

MAX19996A toc04

RF FREQUENCY (MHz)

INPUT IP3 (dBm)

2800260024002200

23

24

25

26

22

2000 3000

TC = -30°C

TC = +25°C

TC = +85°C

PRF = -5dBm/TONE

INPUT IP3 vs. RF FREQUENCY

MAX19996A toc05

RF FREQUENCY (MHz)

INPUT IP3 (dBm)

2800260024002200

23

24

25

26

22

2000 3000

PRF = -5dBm/TONE

PLO = -3dBm, 0dBm, +3dBm

CONVERSION GAIN vs. RF FREQUENCY

11

10

9

8

CONVERSION GAIN (dB)

7

6

2000 3000

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

26

25

24

INPUT IP3 (dBm)

23

22

2000 3000

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

PRF = -5dBm/TONE

MAX19996A toc03

2800260024002200

MAX19996A toc06

2800260024002200

NOISE FIGURE vs. RF FREQUENCY

12

TC = +85°C

11

10

9

NOISE FIGURE (dB)

8

7

TC = -30°C

2000 3000

TC = +25°C

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

12

11

MAX19996A toc07

10

9

NOISE FIGURE (dB)

8

2800260024002200

7

2000 3000

PLO = -3dBm, 0dBm, +3dBm

2800260024002200

RF FREQUENCY (MHz)

MAX19996A toc08

NOISE FIGURE vs. RF FREQUENCY

12

11

10

9

NOISE FIGURE (dB)

8

7

2000 3000

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

MAX19996A toc09

2800260024002200

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________

11

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 2000MHz to 3000MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

2LO-2RF RESPONSE vs. RF FREQUENCY

90

80

70

2LO-2RF RESPONSE (dBc)

60

TC = -30°C, +25°C, +85°C

50

2000 3000

RF FREQUENCY (MHz)

3LO-3RF RESPONSE vs. RF FREQUENCY

85

80

2LO-2RF RESPONSE vs. RF FREQUENCY

90

80

70

2LO-2RF RESPONSE (dBc)

60

VCC = 4.75V, 5.0V, 5.25V

50

2000 3000

RF FREQUENCY (MHz)

PRF = -5dBm

3LO-3RF RESPONSE vs. RF FREQUENCY

85

80

PRF = -5dBm

2800260024002200

PRF = -5dBm

2800260024002200

PRF = -5dBm

90

MAX19996A toc10

MAX19996A toc13

80

70

2LO-2RF RESPONSE (dBc)

60

50

85

80

2LO-2RF RESPONSE vs. RF FREQUENCY

PRF = -5dBm

PLO = +3dBm

PLO = 0dBm

PLO = -3dBm

2000 3000

RF FREQUENCY (MHz)

2800260024002200

3LO-3RF RESPONSE vs. RF FREQUENCY

PRF = -5dBm

MAX19996A toc11

MAX19996A toc14

MAX19996A toc12

MAX19996A toc15

75

3LO-3RF RESPONSE (dBc)

70

65

2000 3000

13

12

(dBm)

1dB

11

INPUT P

10

9

2000 3000

TC = -30°C, +25°C, +85°C

RF FREQUENCY (MHz)

INPUT P

TC = -30°C

vs. RF FREQUENCY

1dB

TC = +85°C

RF FREQUENCY (MHz)

TC = +25°C

75

3LO-3RF RESPONSE (dBc)

70

MAX19996A toc16

65

13

12

(dBm)

1dB

11

INPUT P

10

2800260024002200

2800260024002200

PLO = -3dBm, 0dBm, +3dBm

2000 3000

RF FREQUENCY (MHz)

INPUT P

9

2000 3000

vs. RF FREQUENCY

1dB

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

2800260024002200

2800260024002200

75

3LO-3RF RESPONSE (dBc)

70

65

2000 3000

13

MAX19996A toc17

12

(dBm)

1dB

11

INPUT P

10

9

2000 3000

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

INPUT P

1dB

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

2800260024002200

vs. RF FREQUENCY

MAX19996A toc18

2800260024002200

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

12 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 2000MHz to 3000MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-10

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-10

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-10

-20

TC = +85°C

-30

LO LEAKAGE AT IF PORT (dBm)

TC = +25°C

-40
2300 3300

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

TC = +25°C

TC = +85°C

vs. RF FREQUENCY

TC = -30°C

RF FREQUENCY (MHz)

60

50

40

RF-TO-IF ISOLATION (dBm)

30

20

2000 3000

TC = -30°C

3100290027002500

2800260024002200

MAX19996A toc19

-20

-30

LO LEAKAGE AT IF PORT (dBm)

-40
2300 3300

60

MAX19996A toc22

50

40

RF-TO-IF ISOLATION (dBm)

30

20

2000 3000

PLO = -3dBm, 0dBm, +3dBm

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

vs. RF FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

MAX19996A toc20

-20

-30

LO LEAKAGE AT IF PORT (dBm)

-40

3100290027002500

2300 3300

VCC = 4.75V, 5.0V, 5.25V

3100290027002500

LO FREQUENCY (MHz)

MAX19996A toc21

RF-TO-IF ISOLATION

vs. RF FREQUENCY

60

MAX19996A toc23

50

40

RF-TO-IF ISOLATION (dBm)

30

2800260024002200

20

2000 3000

VCC = 5.0V, 5.25V

VCC = 4.75V

MAX19996A toc24

2800260024002200

RF FREQUENCY (MHz)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

-15

TC = -30°C

-20

-25

-30

LO LEAKAGE AT RF PORT (dBm)

-35

-40
2300 3400

TC = +25°C, +85°C

LO FREQUENCY (MHz)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

-15

MAX19996A toc25

-20

-25

-30

LO LEAKAGE AT RF PORT (dBm)

-35

-40

3180296027402520

2300 3400

PLO = -3dBm, 0dBm, +3dBm

3180296027402520

LO FREQUENCY (MHz)

-10

-15

MAX19996A toc26

-20

-25

-30

LO LEAKAGE AT RF PORT (dBm)

-35

-40

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 5.25V

VCC = 4.75V, 5.0V

2300 3400

LO FREQUENCY (MHz)

MAX19996A toc27

3180296027402520

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________

13

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 2000MHz to 3000MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

TC = -30°C

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
2300 3400

TC = +85°C

LO FREQUENCY (MHz)

RF PORT RETURN LOSS

vs. RF FREQUENCY

0

10

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 4.75V

VCC = 5.0V

VCC = 5.25V

2300 3400

LO FREQUENCY (MHz)

3180296027402520

LO PORT RETURN LOSS

vs. LO FREQUENCY

PLO = +3dBm

TC = +25°C

3180296027402520

-10

MAX19996A toc28

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
2300 3400

0

10

MAX19996A toc31

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

3180296027402520

LO FREQUENCY (MHz)

IF PORT RETURN LOSS

vs. IF FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

fLO = 2900MHz

L1, L2 = 270nH

-10

MAX19996A toc29

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50

0

MAX19996A toc32

10

MAX19996A toc30

MAX19996A toc33

20

RF PORT RETURN LOSS (dB)

30

40

PLO = -3dBm, 0dBm, +3dBm

2000 3000

RF FREQUENCY (MHz)

SUPPLY CURRENT

vs. TEMPERATURE (T

250

VCC = 5.25V

240

230

220

SUPPLY CURRENT (mA)

210

200

-35 85

VCC = 4.75V

TEMPERATURE (°C)

VCC = 5.0V

5525-5

20

20

30

L1, L2 = 390nH

IF PORT RETURN LOSS (dB)

40

L1, L2 = 470nH

2800260024002200

50

50 500

IF FREQUENCY (MHz)

L1, L2 = 120nH

410320230140

LO LEAKAGE AT IF PORT

)

C

-10

MAX19996A toc34

-20

-30

-40

LO LEAKAGE AT IF PORT (dBm)

-50
2300 3300

vs. LO FREQUENCY

L3 = 0Ω

L3 = 4.7nH

31002700 29002500

LO FREQUENCY (MHz)

30

LO PORT RETURN LOSS (dB)

40

1800 4000

50

MAX19996A toc35

40

30

RF-TO-IF ISOLATION (dB)

20

2000 3000

PLO = -3dBm

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

vs. RF FREQUENCY

RF FREQUENCY (MHz)

PLO = 0dBm

L3 = 4.7nH

L3 = 0Ω

345029002350

MAX19996A toc36

28002400 26002200

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

14 ______________________________________________________________________________________

Typical Operating Characteristics

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 3.3V, fRF= 2000MHz to 3000MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

CONVERSION GAIN

vs. RF FREQUENCY

11

TC = -30°C

10

VCC = 3.3V

TC = +25°C

MAX19996A toc37

CONVERSION GAIN

vs. RF FREQUENCY

11

10

VCC = 3.3V

MAX19996A toc38

11

10

CONVERSION GAIN

vs. RF FREQUENCY

MAX19996A toc39

9

8

CONVERSION GAIN (dB)

7

6

2000 3000

21

20

INPUT IP3 (dBm)

19

18

2000 3000

12

11

TC = +85°C

RF FREQUENCY (MHz)

INPUT IP3

vs. RF FREQUENCY

TC = +85°C

TC = -30°C, +25°C

RF FREQUENCY (MHz)

NOISE FIGURE

vs. RF FREQUENCY

TC = +85°C

28002400 26002200

PRF = -5dBm/TONE

VCC = 3.3V

28002400 26002200

VCC = 3.3V

CONVERSION GAIN (dB)

21

MAX19996A toc40

20

INPUT IP3 (dBm)

19

18

12

11

MAX19996A toc43

9

8

7

6

2000 3000

PLO = -3dBm, 0dBm, +3dBm

28002400 26002200

RF FREQUENCY (MHz)

INPUT IP3

vs. RF FREQUENCY

PRF = -5dBm/TONE

VCC = 3.3V

PLO = -3dBm, 0dBm, +3dBm

2000 3000

RF FREQUENCY (MHz)

28002400 26002200

NOISE FIGURE

vs. RF FREQUENCY

VCC = 3.3V

9

8

CONVERSION GAIN (dB)

7

6

21

MAX19996A toc41

20

INPUT IP3 (dBm)

19

18

12

11

MAX19996A toc44

VCC = 3.0V, 3.3V, 3.6V

2000 3000

RF FREQUENCY (MHz)

28002400 26002200

INPUT IP3

vs. RF FREQUENCY

PRF = -5dBm/TONE

VCC = 3.0V, 3.3V, 3.6V

2000 3000

RF FREQUENCY (MHz)

28002400 26002200

NOISE FIGURE

vs. RF FREQUENCY

MAX19996A toc42

MAX19996A toc45

10

9

NOISE FIGURE (dB)

8

TC = -30°C

7

2000 3000

RF FREQUENCY (MHz)

TC = +25°C

10

9

NOISE FIGURE (dB)

8

28002400 26002200

7

2000 3000

PLO = -3dBm, 0dBm, +3dBm

28002400 26002200

RF FREQUENCY (MHz)

10

9

NOISE FIGURE (dB)

8

7

2000

VCC = 3.0V, 3.3V, 3.6V

RF FREQUENCY (MHz)

28002400 26002200

3000

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________

15

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 3.3V, fRF= 2000MHz to 3000MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

2LO-2RF RESPONSE

vs. RF FREQUENCY

80

70

60

2LO-2RF RESPONSE (dBc)

50

2000 3000

TC = -30°C, +25°C, +85°C

RF FREQUENCY (MHz)

3LO-3RF RESPONSE

vs. RF FREQUENCY

80

70

2LO-2RF RESPONSE

vs. RF FREQUENCY

PRF = -5dBm

VCC = 3.0V, 3.3V, 3.6V

28002400 26002200

RF FREQUENCY (MHz)

3LO-3RF RESPONSE

vs. RF FREQUENCY

PRF = -5dBm

PRF = -5dBm

VCC = 3.3V

28002400 26002200

PRF = -5dBm

VCC = 3.3V

80

MAX19996A toc46

70

60

2LO-2RF RESPONSE (dBc)

50

2000 3000

80

MAX19996A toc49

70

2LO-2RF RESPONSE

vs. RF FREQUENCY

PLO = +3dBm

PLO = 0dBm

PLO = -3dBm

RF FREQUENCY (MHz)

3LO-3RF RESPONSE

vs. RF FREQUENCY

PRF = -5dBm

VCC = 3.3V

28002400 26002200

PRF = -5dBm

VCC = 3.3V

80

MAX19996A toc47

70

60

2LO-2RF RESPONSE (dBc)

50

2000 3000

80

MAX19996A toc50

70

MAX19996A toc48

MAX19996A toc51

60

3LO-3RF RESPONSE (dBc)

50

2000 3000

TC = -30°C, +25°C, +85°C

RF FREQUENCY (MHz)

INPUT P

1dB

vs. RF FREQUENCY

10

9

8

(dBm)

1dB

7

INPUT P

6

5

2000 3000

TC = +85°C

TC = -30°C

RF FREQUENCY (MHz)

VCC = 3.3V

TC = +25°C

60

3LO-3RF RESPONSE (dBc)

PLO = -3dBm, 0dBm, +3dBm

50

28002400 26002200

2000 3000

RF FREQUENCY (MHz)

INPUT P

28002400 26002200

1dB

vs. RF FREQUENCY

10

MAX19996A toc52

28002400 26002200

9

8

(dBm)

1dB

7

INPUT P

6

5

2000 3000

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

VCC = 3.3V

28002400 26002200

60

3LO-3RF RESPONSE (dBc)

50

2000 3000

10

MAX19996A toc53

9

8

(dBm)

1dB

7

INPUT P

6

5

2000 3000

vs. RF FREQUENCY

VCC = 3.0V

VCC = 3.0V, 3.3V, 3.6V

RF FREQUENCY (MHz)

INPUT P

1dB

VCC = 3.6V

VCC = 3.3V

RF FREQUENCY (MHz)

28002400 26002200

MAX19996A toc54

28002400 26002200

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

16 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 3.3V, fRF= 2000MHz to 3000MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-20

-30

TC = +85°C

VCC = 3.3V

MAX19996A toc55

-20

-30

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

VCC = 3.3V

-20

MAX19996A toc56

-30

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

VCC = 3.0V, 3.3V, 3.6V

MAX19996A toc57

-40

LO LEAKAGE AT IF PORT (dBm)

-50

TC = +25°C

2300 3300

LO FREQUENCY (MHz)

TC = -30°C

RF-TO-IF ISOLATION

vs. RF FREQUENCY

60

50

40

RF-TO-IF ISOLATION (dB)

30

20

2000 3000

TC = -30°C, +25°C, +85°C

RF FREQUENCY (MHz)

VCC = 3.3V

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-20

31002700 29002500

28002400 26002200

VCC = 3.3V

-40

LO LEAKAGE AT IF PORT (dBm)

-50
2300 3300

60

MAX19996A toc58

50

40

RF-TO-IF ISOLATION (dB)

30

20

2000 3000

-20

PLO = -3dBm, 0dBm, +3dBm

31002700 29002500

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

vs. RF FREQUENCY

VCC = 3.3V

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 3.3V

-40

LO LEAKAGE AT IF PORT (dBm)

-50
2300 3300

LO FREQUENCY (MHz)

31002700 29002500

RF-TO-IF ISOLATION

vs. RF FREQUENCY

60

MAX19996A toc59

50

40

RF-TO-IF ISOLATION (dB)

30

20

28002400 26002200

2000 3000

VCC = 3.0V, 3.3V, 3.6V

28002400 26002200

RF FREQUENCY (MHz)

MAX19996A toc60

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-20

MAX19996A toc62

-30

-40

LO LEAKAGE AT RF PORT (dBm)

-50
2300 3400

VCC = 3.0V, 3.3V, 3.6V

LO FREQUENCY (MHz)

-30

-40

LO LEAKAGE AT RF PORT (dBm)

-50
2300 3400

TC = -30°C, +25°C, +85°C

LO FREQUENCY (MHz)

MAX19996A toc61

-30

-40

LO LEAKAGE AT RF PORT (dBm)

-50

31802740 29602520

PLO = -3dBm, 0dBm, +3dBm

2300 3400

LO FREQUENCY (MHz)

31802740 29602520

MAX19996A toc63

31802740 29602520

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________

17

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 3.3V, fRF= 2000MHz to 3000MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
2300 3400

TC = -30°C

TC = +85°C

LO FREQUENCY (MHz)

RF PORT RETURN LOSS

vs. RF FREQUENCY

0

5

10

15

20

RF PORT RETURN LOSS (dB)

25

PLO = -3dBm, 0dBm, +3dBm

VCC = 3.3V

TC = +25°C

31802740 29602520

VCC = 3.3V

-10

MAX19996A toc64

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
2300 3400

0

MAX19996A toc67

10

20

30

IF PORT RETURN LOSS (dB)

40

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 3.3V

PLO = -3dBm, 0dBm, +3dBm

31802740 29602520

LO FREQUENCY (MHz)

IF PORT RETURN LOSS

vs. IF FREQUENCY

fLO = 2900MHz

VCC = 3.0V, 3.3V, 3.6V

-10

MAX19996A toc65

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50

0

MAX19996A toc68

10

20

30

LO PORT RETURN LOSS (dB)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 3.0V

2300 3400

VCC = 3.3V

VCC = 3.6V

31802740 29602520

LO FREQUENCY (MHz)

LO PORT RETURN LOSS

vs. LO FREQUENCY

PLO = +3dBm

PLO = -3dBm

VCC = 3.3V

PLO = 0dBm

MAX19996A toc66

MAX19996A toc69

30

2000 3000

RF FREQUENCY (MHz)

SUPPLY CURRENT

vs. TEMPERATURE (T

170

VCC = 3.6V

160

150

SUPPLY CURRENT (mA)

140

VCC = 3.0V

130

-35 85
TEMPERATURE (°C)

VCC = 3.3V

25 55-5

28002400 26002200

50

50 500

IF FREQUENCY (MHz)

410230 320140

LO LEAKAGE AT IF PORT

)

C

-10

MAX19996A toc70

-20

-30

-40

LO LEAKAGE AT IF PORT (dBm)

-50
2300 3300

vs. LO FREQUENCY

VCC = 3.3V

L3 = 0Ω

L3 = 4.7nH

31002700 29002500

LO FREQUENCY (MHz)

40

1800 4000

50

MAX19996A toc71

40

30

RF-TO-IF ISOLATION (dB)

20

2000 3000

2900 34502350

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

vs. RF FREQUENCY

L3 = 4.7nH

L3 = 0Ω

RF FREQUENCY (MHz)

VCC = 3.3V

MAX19996A toc72

28002400 26002200

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

18 ______________________________________________________________________________________

Typical Operating Characteristics

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 2000MHz to 3000MHz, LO is low-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

CONVERSION GAIN

vs. RF FREQUENCY

11

10

TC = -30°C

CONVERSION GAIN

vs. RF FREQUENCY

TC = +25°C

MAX19996A toc73

CONVERSION GAIN

vs. RF FREQUENCY

MAX19996A toc74

11

10

11

10

MAX19996A toc75

9

8

CONVERSION GAIN (dB)

7

6

2000 3000

26

25

24

INPUT IP3 (dBm)

23

22

2000 3000

TC = +85°C

RF FREQUENCY (MHz)

INPUT IP3

vs. RF FREQUENCY

TC = +85°C

TC = +25°C

RF FREQUENCY (MHz)

28002400 26002200

PRF = -5dBm/TONE

TC = -30°C

28002400 26002200

CONVERSION GAIN (dB)

26

MAX19996A toc76

25

24

INPUT IP3 (dBm)

23

22

9

8

7

6

2000 3000

PLO = -3dBm, 0dBm, +3dBm

28002400 26002200

RF FREQUENCY (MHz)

INPUT IP3

vs. RF FREQUENCY

PRF = -5dBm/TONE

PLO = -3dBm, 0dBm, +3dBm

2000 3000

RF FREQUENCY (MHz)

28002400 26002200

9

8

CONVERSION GAIN (dB)

7

6

26

MAX19996A toc77

25

24

INPUT IP3 (dBm)

23

22

VCC = 4.75V, 5.0V, 5.25V

2000 3000

RF FREQUENCY (MHz)

28002400 26002200

INPUT IP3

vs. RF FREQUENCY

PRF = -5dBm/TONE

VCC = 4.75V, 5.0V, 5.25V

2000 3000

RF FREQUENCY (MHz)

28002400 26002200

MAX19996A toc78

NOISE FIGURE

vs. RF FREQUENCY

12

TC = +85°C

11

10

9

NOISE FIGURE (dB)

8

TC = -30°C

7

2000 3000

RF FREQUENCY (MHz)

TC = +25°C

NOISE FIGURE

vs. RF FREQUENCY

MAX19996A toc80

NOISE FIGURE (dB)

12

11

10

9

8

7

2000 3000

12

11

MAX19996A toc79

10

9

NOISE FIGURE (dB)

8

28002400 26002200

7

2000 3000

PLO = -3dBm, 0dBm, +3dBm

28002400 26002200

RF FREQUENCY (MHz)

NOISE FIGURE

vs. RF FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

MAX19996A toc81

28002400 26002200

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________

19

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 2000MHz to 3000MHz, LO is low-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

2RF-2LO RESPONSE

vs. RF FREQUENCY

90

80

70

2RF-2LO RESPONSE (dBc)

60

TC = -30°C, +25°C, +85°C

50

2000 3000

RF FREQUENCY (MHz)

3RF-3LO RESPONSE

vs. RF FREQUENCY

85

80

2RF-2LO RESPONSE

vs. RF FREQUENCY

PRF = -5dBm

VCC = 4.75V, 5.0V, 5.25V

28002400 26002200

RF FREQUENCY (MHz)

3RF-3LO RESPONSE

vs. RF FREQUENCY

PRF = -5dBm

PRF = -5dBm

28002400 26002200

PRF = -5dBm

90

MAX19996A toc82

80

70

2RF-2LO RESPONSE (dBc)

60

50

2000 3000

85

MAX19996A toc85

80

2RF-2LO RESPONSE

vs. RF FREQUENCY

PLO = +3dBm

PLO = -3dBm

RF FREQUENCY (MHz)

3RF-3LO RESPONSE

vs. RF FREQUENCY

PRF = -5dBm

PLO = 0dBm

28002400 26002200

PRF = -5dBm

90

MAX19996A toc83

80

70

2RF-2LO RESPONSE (dBc)

60

50

2000 3000

85

MAX19996A toc86

80

MAX19996A toc84

MAX19996A toc87

75

3RF-3LO RESPONSE (dBc)

70

TC = -30°C, +25°C, +85°C

65

2000 3000

RF FREQUENCY (MHz)

INPUT P

1dB

vs. RF FREQUENCY

13

12

(dBm)

1dB

11

INPUT P

10

9

2000 3000

TC = +85°C

TC = +25°C

RF FREQUENCY (MHz)

TC = -30°C

75

3RF-3LO RESPONSE (dBc)

70

28002400 26002200

65

PLO = -3dBm, 0dBm, +3dBm

2000 3000

RF FREQUENCY (MHz)

INPUT P

28002400 26002200

1dB

vs. RF FREQUENCY

13

MAX19996A toc88

12

(dBm)

1dB

11

INPUT P

10

28002400 26002200

9

2000 3000

PLO = -3dBm, 0dBm, +3dBm

28002400 26002200

RF FREQUENCY (MHz)

75

3RF-3LO RESPONSE (dBc)

70

65

2000 3000

13

MAX19996A toc89

12

(dBm)

1dB

11

INPUT P

10

9

2000 3000

VCC = 4.75V, 5.0V, 5.25V

vs. RF FREQUENCY

VCC = 5.25V

VCC = 5.0V

RF FREQUENCY (MHz)

INPUT P

1dB

VCC = 4.75V

RF FREQUENCY (MHz)

28002400 26002200

MAX19996A toc90

28002400 26002200

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

20 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 2000MHz to 3000MHz, LO is low-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-10

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-10

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-10

TC = -30°C

-20

-30

LO LEAKAGE AT IF PORT (dBm)

TC = +85°C

-40
1700 2700

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

60

50

40

RF-TO-IF ISOLATION (dB)

30

20

2000 3000

vs. RF FREQUENCY

TC = +25°C, +85°C

TC = -30°C

RF FREQUENCY (MHz)

TC = +25°C

25002100 23001900

28002400 26002200

MAX19996A toc91

-20

-30

LO LEAKAGE AT IF PORT (dBm)

-40
1700 2700

60

MAX19996A toc94

50

40

RF-TO-IF ISOLATION (dB)

30

20

2000 3000

PLO = -3dBm, 0dBm, +3dBm

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

vs. RF FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

MAX19996A toc92

-20

-30

LO LEAKAGE AT IF PORT (dBm)

-40

25002100 23001900

1700 2700

VCC = 4.75V, 5.0V, 5.25V

25002100 23001900

LO FREQUENCY (MHz)

MAX19996A toc93

RF-TO-IF ISOLATION

vs. RF FREQUENCY

60

MAX19996A toc95

50

40

RF-TO-IF ISOLATION (dB)

30

20

28002400 26002200

2000 3000

VCC = 4.75V, 5.0V, 5.25V

28002400 26002200

RF FREQUENCY (MHz)

MAX19996A toc96

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

-15
TC = -30°C, +25°C, +85°C

-20

-25

-30

LO LEAKAGE AT RF PORT (dBm)

-35

-40

1800 2900

LO FREQUENCY (MHz)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

-15

MAX19996A toc97

26802240 24602020

PLO = -3dBm, 0dBm, +3dBm

-20

-25

-30

LO LEAKAGE AT RF PORT (dBm)

-35

-40
1800 2900

LO FREQUENCY (MHz)

26802240 24602020

-10

-15

MAX19996A toc98

-20

-25

-30

LO LEAKAGE AT RF PORT (dBm)

-35

-40

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

1800 2900

LO FREQUENCY (MHz)

MAX19996A toc99

26802240 24602020

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________

21

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 2000MHz to 3000MHz, LO is low-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

TC = -30°C

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
1800 2900

TC = +85°C

LO FREQUENCY (MHz)

RF PORT RETURN LOSS

vs. RF FREQUENCY

0

10

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 4.75V

VCC = 5.25V

1800 2900

LO FREQUENCY (MHz)

VCC = 5.0V

26802240 24602020

LO PORT RETURN LOSS

vs. LO FREQUENCY

0

PLO = +3dBm

TC = +25°C

26802240 24602020

-10

MAX19996A toc100

MAX19996A toc103

PLO = -3dBm, 0dBm, +3dBm

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
1800 2900

0

10

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

26802240 24602020

LO FREQUENCY (MHz)

IF PORT RETURN LOSS

vs. IF FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

fLO = 2300MHz

L1, L2 = 270nH

-10

MAX19996A toc101

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50

MAX19996A toc104

10

MAX19996A toc102

MAX19996A toc105

20

PLO = -3dBm, 0dBm, +3dBm

30

RF PORT RETURN LOSS (dB)

40

2000 3000

RF FREQUENCY (MHz)

SUPPLY CURRENT

vs. TEMPERATURE (T

250

VCC = 5.25V

240

230

220

SUPPLY CURRENT (mA)

210

200

-35 85

VCC = 4.75V

TEMPERATURE (°C)

VCC = 5.0V

25 55-5

20

L1, L2 = 390nH

30

IF PORT RETURN LOSS (dB)

40

28002400 26002200

50

L1, L2 = 470nH

50 500

IF FREQUENCY (MHz)

L1, L2 = 120nH

410230 320140

LO LEAKAGE AT IF PORT

)

C

MAX19996A toc106

0

-10

-20

-30

LO LEAKAGE AT IF PORT (dBm)

-40
1700 2700

vs. LO FREQUENCY

L3 = 0Ω

L3 = 4.7nH

2100 2300 25001900

LO FREQUENCY (MHz)

20

30

LO PORT RETURN LOSS (dB)

40

1800 4000

60

MAX19996A toc107

50

40

RF-TO-IF ISOLATION (dB)

30

20

2000 3000

PLO = 0dBm

PLO = -3dBm

2900 34502350

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

vs. RF FREQUENCY

MAX19996A toc108

L3 = 4.7nH

L3 = 0Ω

2400 2600 28002200

RF FREQUENCY (MHz)

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

22 ______________________________________________________________________________________

Typical Operating Characteristics

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 3000MHz to 3900MHz, LO is low-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

CONVERSION GAIN

vs. RF FREQUENCY

10

TC = -30°C

9

CONVERSION GAIN

vs. RF FREQUENCY

TC = +25°C

MAX19996A toc109

CONVERSION GAIN

vs. RF FREQUENCY

MAX19996A toc110

10

9

10

9

MAX19996A toc111

8

CONVERSION GAIN (dB)

7

TC = +85°C

6

3000 3900

RF FREQUENCY (MHz)

INPUT IP3

vs. RF FREQUENCY

27

26

25

INPUT IP3 (dBm)

24

23

TC = +85°C

TC = +25°C

3000 3900

RF FREQUENCY (MHz)

NOISE FIGURE

vs. RF FREQUENCY

13

TC = +85°C

12

36003300

PRF = -5dBm/TONE

TC = -30°C

36003300

CONVERSION GAIN (dB)

27

MAX19996A toc112

26

25

INPUT IP3 (dBm)

24

23

13

12

MAX19996A toc115

8

7

6

3000 3900

PLO = -3dBm, 0dBm, +3dBm

36003300

RF FREQUENCY (MHz)

INPUT IP3

vs. RF FREQUENCY

PRF = -5dBm/TONE

PLO = -3dBm, 0dBm, +3dBm

3000 3900

RF FREQUENCY (MHz)

36003300

NOISE FIGURE

vs. RF FREQUENCY

8

CONVERSION GAIN (dB)

7

6

27

MAX19996A toc113

26

25

INPUT IP3 (dBm)

24

23

13

12

MAX19996A toc116

VCC = 4.75V, 5.0V, 5.25V

3000 3900

RF FREQUENCY (MHz)

36003300

INPUT IP3

vs. RF FREQUENCY

PRF = -5dBm/TONE

VCC = 4.75V, 5.0V, 5.25V

3000 3900

RF FREQUENCY (MHz)

36003300

NOISE FIGURE

vs. RF FREQUENCY

MAX19996A toc114

MAX19996A toc117

11

10

NOISE FIGURE (dB)

9

8

3000 3900

TC = -30°C

RF FREQUENCY (MHz)

TC = +25°C

36003300

11

10

NOISE FIGURE (dB)

9

8

3000 3900

PLO = -3dBm, 0dBm, +3dBm

36003300

RF FREQUENCY (MHz)

11

10

NOISE FIGURE (dB)

9

8

3000 3900

VCC = 4.75V, 5.0V, 5.25V

RF FREQUENCY (MHz)

36003300

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________

23

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 3000MHz to 3900MHz, LO is low-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

2RF-2LO RESPONSE

vs. RF FREQUENCY

80

70

60

2RF-2LO RESPONSE (dBc)

TC = -30°C, +25°C, +85°C

50

3000 3900

RF FREQUENCY (MHz)

3RF-3LO RESPONSE

vs. RF FREQUENCY

85

80

2RF-2LO RESPONSE

vs. RF FREQUENCY

PRF = -5dBm

VCC = 4.75V, 5.0V, 5.25V

36003300

RF FREQUENCY (MHz)

3RF-3LO RESPONSE

vs. RF FREQUENCY

PRF = -5dBm

PRF = -5dBm

36003300

PRF = -5dBm

80

MAX19996A toc118

70

60

2RF-2LO RESPONSE (dBc)

50

3000 3900

85

MAX19996A toc121

80

2RF-2LO RESPONSE

vs. RF FREQUENCY

PLO = -0dBm

PLO = -3dBm

RF FREQUENCY (MHz)

3RF-3LO RESPONSE

vs. RF FREQUENCY

PLO = +3dBm

36003300

PRF = -5dBm

PRF = -5dBm

80

MAX19996A toc119

70

60

2RF-2LO RESPONSE (dBc)

50

3000 3900

85

MAX19996A toc122

80

MAX19996A toc120

MAX19996A toc123

75

3RF-3LO RESPONSE (dBc)

70

65

TC = -30°C, +25°C, +85°C

3000 3900

RF FREQUENCY (MHz)

INPUT P

36003300

1dB

vs. RF FREQUENCY

14

TC = +85°C

13

12

(dBm)

1dB

11

INPUT P

TC = -30°C

10

9

3000 3900

RF FREQUENCY (MHz)

TC = +25°C

36003300

75

3RF-3LO RESPONSE (dBc)

70

65

3000 3900

14

13

MAX19996A toc124

12

(dBm)

1dB

11

INPUT P

10

9

3000 3900

PLO = -3dBm, 0dBm, +3dBm

36003300

RF FREQUENCY (MHz)

INPUT P

1dB

vs. RF FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

36003300

RF FREQUENCY (MHz)

75

3RF-3LO RESPONSE (dBc)

70

65

3000 3900

14

13

MAX19996A toc125

12

(dBm)

1dB

11

INPUT P

10

9

3000 3900

RF FREQUENCY (MHz)

vs. RF FREQUENCY

VCC = 5.0V

RF FREQUENCY (MHz)

VCC = 4.75V, 5.0V, 5.25V

36003300

INPUT P

1dB

VCC = 5.25V

VCC = 4.75V

36003300

MAX19996A toc126

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

24 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 3000MHz to 3900MHz, LO is low-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-10

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-10

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-10

-20
TC = +85°C

-30

LO LEAKAGE AT IF PORT (dBm)

TC = -30°C

-40

2700 3600

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

45

35

25

RF-TO-IF ISOLATION (dB)

15

3000 3900

vs. RF FREQUENCY

TC = -30°C, +25°C, +85°C

RF FREQUENCY (MHz)

TC = +25°C

33003000

36003300

MAX19996A toc127

-20

-30

LO LEAKAGE AT IF PORT (dBm)

-40
2700 3600

45

MAX19996A toc130

35

25

RF-TO-IF ISOLATION (dB)

15

3000 3900

PLO = -3dBm, 0dBm, +3dBm

33003000

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

vs. RF FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

36003300

RF FREQUENCY (MHz)

MAX19996A toc128

-20

-30

LO LEAKAGE AT IF PORT (dBm)

-40
2700 3600

45

MAX19996A toc131

35

25

RF-TO-IF ISOLATION (dB)

15

3000 3900

VCC = 4.75V, 5.0V, 5.25V

33003000

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

vs. RF FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

36003300

RF FREQUENCY (MHz)

MAX19996A toc129

MAX19996A toc132

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-15

TC = -30°C, +25°C, +85°C

-25

-35

LO LEAKAGE AT RF PORT (dBm)

-45
2600 3800

LO FREQUENCY (MHz)

350032002900

-15

MAX19996A toc133

-25

-35

LO LEAKAGE AT RF PORT (dBm)

-45
2600 3800

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

350032002900

LO FREQUENCY (MHz)

-15

MAX19996A toc134

-25

-35

LO LEAKAGE AT RF PORT (dBm)

-45

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

2600 3800

LO FREQUENCY (MHz)

MAX19996A toc135

350032002900

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________

25

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 3000MHz to 3900MHz, LO is low-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

TC = -30°C, +25°C, +85°C

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
2600 3800

LO FREQUENCY (MHz)

RF PORT RETURN LOSS

vs. RF FREQUENCY

0

5

10

15

20

RF PORT RETURN LOSS (dB)

25

30

3000 4000

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

PLO = -3dBm, 0dBm, +3dBm

MAX19996A toc136

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

350032002900

-50
2600 3800

LO FREQUENCY (MHz)

350032002900

-10

MAX19996A toc137

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50

IF PORT RETURN LOSS

vs. IF FREQUENCY

0

10

MAX19996A toc139

20

30

L1, L2 = 390nH

IF PORT RETURN LOSS (dB)

40

3800360034003200

50

L1, L2 = 470nH

50 500

VCC = 4.75V, 5.0V, 5.25V

L1, L2 = 270nH

IF FREQUENCY (MHz)

fLO = 3200MHz

L1, L2 = 120nH

410230 320140

MAX19996A toc140

10

20

30

LO PORT RETURN LOSS (dB)

40

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

2600 3800

LO FREQUENCY (MHz)

350032002900

LO PORT RETURN LOSS

vs. LO FREQUENCY

0

PLO = +3dBm

PLO = 0dBm

PLO = -3dBm

1800 4000

2900 34502350

LO FREQUENCY (MHz)

MAX19996A toc138

MAX19996A toc141

SUPPLY CURRENT

vs. TEMPERATURE (T

250

VCC = 5.25V

240

230

220

SUPPLY CURRENT (mA)

210

200

-35 85

VCC = 4.75V

TEMPERATURE (°C)

VCC = 5.0V

25 55-5

LO LEAKAGE AT IF PORT

)

C

-10

-20

MAX19996A toc142

-30

-40

LO LEAKAGE AT IF PORT (dBm)

-50

-60
2700 3600

vs. LO FREQUENCY

L3 = 4.7nH

L3 = 0Ω

33003000

LO FREQUENCY (MHz)

50

MAX19996A toc143

40

30

RF-TO-IF ISOLATION (dB)

20

3000 3900

RF-TO-IF ISOLATION

vs. RF FREQUENCY

L3 = 0Ω

L3 = 4.7nH

RF FREQUENCY (MHz)

MAX19996A toc144

36003300

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

26 ______________________________________________________________________________________

Typical Operating Characteristics

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 3000MHz to 3700MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

CONVERSION GAIN

vs. RF FREQUENCY

10

TC = -30°C

9

CONVERSION GAIN

vs. RF FREQUENCY

TC = +25°C

MAX19996A toc145

CONVERSION GAIN

vs. RF FREQUENCY

MAX19996A toc146

10

9

10

9

MAX19996A toc147

8

CONVERSION GAIN (dB)

7

6

3000 3700

TC = +85°C

RF FREQUENCY (MHz)

INPUT IP3

vs. RF FREQUENCY

26

TC = +85°C

25

INPUT IP3 (dBm)

24

TC = +25°C

23

3000 3700

3350 35253175

RF FREQUENCY (MHz)

NOISE FIGURE

vs. RF FREQUENCY

13

12

TC = +85°C

352533503175

PRF = -5dBm/TONE

TC = -30°C

CONVERSION GAIN (dB)

26

MAX19996A toc148

25

INPUT IP3 (dBm)

24

23

13

12

MAX19996A toc151

8

7

PLO = -3dBm, 0dBm, +3dBm

6

3000 3700

RF FREQUENCY (MHz)

352533503175

INPUT IP3

vs. RF FREQUENCY

PRF = -5dBm/TONE

PLO = -3dBm, 0dBm, +3dBm

3000 3700

3350 35253175

RF FREQUENCY (MHz)

NOISE FIGURE

vs. RF FREQUENCY

PLO = -3dBm

8

CONVERSION GAIN (dB)

7

6

26

MAX19996A toc149

25

INPUT IP3 (dBm)

24

23

13

12

MAX19996A toc152

VCC = 4.75V, 5.0V, 5.25V

3000 3700

RF FREQUENCY (MHz)

352533503175

INPUT IP3

vs. RF FREQUENCY

PRF = -5dBm/TONE

VCC = 4.75V, 5.0V, 5.25V

3000 3700

3350 35253175

RF FREQUENCY (MHz)

NOISE FIGURE

vs. RF FREQUENCY

MAX19996A toc150

MAX19996A toc153

11

10

NOISE FIGURE (dB)

9

TC = -30°C

8

3000 3700

RF FREQUENCY (MHz)

TC = +25°C

352533503175

11

10

NOISE FIGURE (dB)

9

8

3000 3700

PLO = 0dBm, +3dBm

352533503175

RF FREQUENCY (MHz)

11

10

NOISE FIGURE (dB)

9

8

VCC = 4.75V, 5.0V, 5.25V

3000 3700

RF FREQUENCY (MHz)

352533503175

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________

27

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 3000MHz to 3700MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

2LO-2RF RESPONSE

vs. RF FREQUENCY

80

70

60

2LO-2RF RESPONSE (dBc)

TC = -30°C

50

3000 3700

RF FREQUENCY (MHz)

3LO-3RF RESPONSE

vs. RF FREQUENCY

90

85

2LO-2RF RESPONSE

vs. RF FREQUENCY

PRF = -5dBm

VCC = 4.75V, 5.0V, 5.25V

352533503175

RF FREQUENCY (MHz)

3LO-3RF RESPONSE

vs. RF FREQUENCY

PRF = -5dBm

PRF = -5dBm

TC = +85°C

352533503175

PRF = -5dBm

TC = +25°C

80

MAX19996A toc154

70

60

2LO-2RF RESPONSE (dBc)

50

3000 3700

90

MAX19996A toc157

85

2LO-2RF RESPONSE

vs. RF FREQUENCY

PLO = 0dBm

RF FREQUENCY (MHz)

3LO-3RF RESPONSE

vs. RF FREQUENCY

PLO = -3dBm

PLO = +3dBm

PLO = -3dBm

PRF = -5dBm

352533503175

PRF = -5dBm

80

MAX19996A toc155

70

60

2LO-2RF RESPONSE (dBc)

50

3000 3700

90

MAX19996A toc158

85

MAX19996A toc156

MAX19996A toc159

80

3LO-3RF RESPONSE (dBc)

75

70

3000 3700

TC = -30°C

TC = +25°C

RF FREQUENCY (MHz)

INPUT P

TC = +85°C

352533503175

1dB

vs. RF FREQUENCY

14

13

12

(dBm)

1dB

11

INPUT P

10

9

3000 3700

TC = +85°C

TC = +25°C

TC = -30°C

352533503175

RF FREQUENCY (MHz)

80

3LO-3RF RESPONSE (dBc)

75

70

3000 3700

14

13

MAX19996A toc160

12

(dBm)

1dB

11

INPUT P

10

9

3000 3700

PLO = +3dBm

PLO = 0dBm

RF FREQUENCY (MHz)

INPUT P

1dB

vs. RF FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

80

VCC = 5.25V

3LO-3RF RESPONSE (dBc)

75

VCC = 4.75V

352533503175

70

3000 3700

VCC = 5.0V

RF FREQUENCY (MHz)

INPUT P

1dB

352533503175

vs. RF FREQUENCY

14

13

MAX19996A toc161

12

(dBm)

1dB

11

INPUT P

10

9

352533503175

3000 3700

VCC = 5.25V

MAX19996A toc162

VCC = 5.0V

VCC = 4.75V

352533503175

RF FREQUENCY (MHz)

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

28 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 3000MHz to 3700MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-10

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-10

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-10

-20

TC = -30°C

-30

LO LEAKAGE AT IF PORT (dBm)

-40
3300 4000

45

TC = -30°C, +25°C, +85°C

35

25

RF-TO-IF ISOLATION (dB)

15

3000 3700

TC = +25°C

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

vs. RF FREQUENCY

RF FREQUENCY (MHz)

TC = +85°C

382536503475

352533503175

MAX19996A toc163

-20

-30

LO LEAKAGE AT IF PORT (dBm)

-40
3300 4000

45

MAX19996A toc166

35

25

RF-TO-IF ISOLATION (dB)

15

3000 3700

PLO = -3dBm

LO FREQUENCY (MHz)

PLO = 0dBm

PLO = +3dBm

RF-TO-IF ISOLATION

vs. RF FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

MAX19996A toc164

-20

-30

LO LEAKAGE AT IF PORT (dBm)

382536503475

-40

VCC = 4.75V, 5.0V, 5.25V

3300

382536503475

LO FREQUENCY (MHz)

MAX19996A toc165

4000

RF-TO-IF ISOLATION

vs. RF FREQUENCY

45

MAX19996A toc167

35

25

RF-TO-IF ISOLATION (dB)

352533503175

15

VCC = 4.75V, 5.0V, 5.25V

3000 3700

RF FREQUENCY (MHz)

352533503175

MAX19996A toc168

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-15

-25

-35

LO LEAKAGE AT RF PORT (dBm)

-45

TC = -30°C, +25°C, +85°C

3000 4000

LO FREQUENCY (MHz)

375035003250

-15

MAX19996A toc169

-25

-35

LO LEAKAGE AT RF PORT (dBm)

-45
3000 4000

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

375035003250

LO FREQUENCY (MHz)

-15

MAX19996A toc170

-25

-35

LO LEAKAGE AT RF PORT (dBm)

-45

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

3000 4000

LO FREQUENCY (MHz)

MAX19996A toc171

375035003250

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

______________________________________________________________________________________

29

Typical Operating Characteristics (continued)

(

Typical Application Circuit

with tuning elements outlined in Table 1, VCC= 5.0V, fRF= 3000MHz to 3700MHz, LO is high-side

injected for a 300MHz IF, P

RF

= -5dBm, PLO= 0dBm, TC= +25°C, unless otherwise noted.)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

0

TC = -30°C, +25°C, +85°C

-10

-20

-30

2LO LEAKAGE AT RF PORT (dBm)

-40
3000 4000

LO FREQUENCY (MHz)

RF PORT RETURN LOSS

vs. RF FREQUENCY

0

5

10

15

20

RF PORT RETURN LOSS (dB)

25

30

2700 3700

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

0

MAX19996A toc172

375035003250

PLO = -3dBm, 0dBm, +3dBm

-10

-20

-30

2LO LEAKAGE AT RF PORT (dBm)

-40
3000 4000

LO FREQUENCY (MHz)

375035003250

MAX19996A toc173

-10

-20

-30

2LO LEAKAGE AT RF PORT (dBm)

-40

IF PORT RETURN LOSS

vs. IF FREQUENCY

0

10

MAX19996A toc175

20

30

L1, L2 = 390nH

IF PORT RETURN LOSS (dB)

40

L1, L2 = 470nH

35003100 33002900

50

50 500

VCC = 4.75V, 5.0V, 5.25V

L1, L2 = 270nH

L1, L2 = 120nH

IF FREQUENCY (MHz)

fLO = 3800MHz

410230 320140

MAX19996A toc176

10

20

30

LO PORT RETURN LOSS (dB)

40

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

0

VCC = 4.75V, 5.0V, 5.25V

3000 4000

LO FREQUENCY (MHz)

375035003250

LO PORT RETURN LOSS

vs. LO FREQUENCY

0

PLO = +3dBm

PLO = 0dBm

PLO = -3dBm

1800 4000

2900 34502350

LO FREQUENCY (MHz)

MAX19996A toc174

MAX19996A toc177

SUPPLY CURRENT

vs. TEMPERATURE (T

250

VCC = 5.25V

240

230

220

SUPPLY CURRENT (mA)

210

200

-35 85

VCC = 4.75V

TEMPERATURE (°C)

VCC = 5.0V

25 55-5

)

C

-20

MAX19996A toc178

-30

-40

-50

LO LEAKAGE AT IF PORT (dBm)

-60
3300 4000

vs. LO FREQUENCY

L3 = 4.7nH

L3 = 0Ω

LO FREQUENCY (MHz)

50

MAX19996A toc179

40

30

RF-TO-IF ISOLATION (dB)

20

382536503475

3000 3700

LO LEAKAGE AT IF PORT

RF-TO-IF ISOLATION

vs. RF FREQUENCY

L3 = 0Ω

L3 = 4.7nH

RF FREQUENCY (MHz)

MAX19996A toc180

352533503175

Detailed Description

When used as a high-side LO injection mixer in the
2300MHz to 2900MHz RF band, the MAX19996A pro­vides 8.7dB of conversion gain and +24.5dBm of IIP3
with a typical noise figure of 9.8dB. The integrated
baluns and matching circuitry allow for 50Ω single­ended interfaces to the RF and the LO ports. The inte­grated LO buffer provides a high drive level to the
mixer core, reducing the LO drive required at the
MAX19996A’s input to a -3dBm to +3dBm range. The IF
port incorporates a differential output, which is ideal for
providing enhanced 2LO-2RF performance.

Specifications are guaranteed over broad frequency
ranges to allow for use in WCS, LTE, WiMAX, and
MMDS base stations. The MAX19996A is specified to
operate over an RF input range of 2000MHz to
3900MHz, an LO range of 2100MHz to 4000MHz, and
an IF range of 50MHz to 500MHz. The external IF com­ponents set the lower frequency range (see the

Typical

Operating Characteristics

for details). Operation

beyond these ranges is possible (see the

Typical

Operating Characteristics

for additional information).

RF Input and Balun

The MAX19996A RF input provides a 50Ω match when
combined with a series DC-blocking capacitor. This
DC-blocking capacitor is required as the input is inter­nally DC shorted to ground through the on-chip balun.
When using an 8.2pF DC-blocking capacitor, the RF
port input return loss is typically 14dB over the RF fre­quency range of 2300MHz to 2900MHz. A return loss of
15dB over the 3000MHz to 3900MHz range can be
achieved by changing the DC-blocking capacitor to

1.5pF.

LO Inputs, Buffer, and Balun

With a broadband LO drive circuit spanning 2100MHz
to 4000MHz, the MAX19996A can be used in either
low-side or high-side LO injection architectures for vir­tually all 2.5GHz and 3.5GHz applications. The LO
input is internally matched to 50Ω, requiring only a 2pF
DC-blocking capacitor. A two-stage internal LO buffer
allows for a -3dBm to +3dBm LO input power range.
The on-chip low-loss balun, along with an LO buffer,
drives the double-balanced mixer. All interfacing and
matching components from the LO inputs to the IF out­puts are integrated on-chip.

Pin Description

30 ______________________________________________________________________________________

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

MAX19996A

PIN NAME FUNCTION

1, 6, 8, 14 V

2RF

3, 4, 5, 10,

12, 13, 17

7 LOBIAS

9, 15 N.C. Not internally connected. Pins can be grounded.

11 LO Local O sci l l ator Inp ut. Thi s i np ut i s i nter nal l y m atched to 50Ω . Req ui r es an i np ut D C - b l ocki ng cap aci tor .

16 LEXT

18, 19 IF-, IF+

20 IFBIAS

—EP

CC

GND

Power Supply. Bypass to GND with 0.01µF capacitors as close as possible to the pin.

Single-Ended 50Ω RF Input. Internally matched and DC shorted to GND through a balun. Requires an
input DC-blocking capacitor.

Ground. Internally connected to the exposed pad. Connect all ground pins and the exposed pad (EP)
together.

LO Amplifier Bias Control. Output bias resistor for the LO buffer. Connect a 604Ω 1% (230mA bias
condition) from LOBIAS to ground.

E xter nal Ind uctor C onnecti on. C onnect an i nd uctor fr om thi s p i n to g r ound to i ncr ease the RF- to- IF and
LO- to- IF i sol ati on ( see the Typ i cal Op er ati ng C har acter i sti cs for typ i cal p er for m ance vs. i nd uctor val ue) .

Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
Application Circuit).

IF Amplifier Bias Control. IF bias resistor connection for the IF amplifier. Connect a 698Ω 1% (230mA
bias condition) from IFBIAS to GND.

Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple
ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via
grounds are also required to achieve the noted RF performance.

(see the Typical

CC

______________________________________________________________________________________ 31

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

MAX19996A

High-Linearity Mixer

The core of the MAX19996A is a double-balanced,
high-performance passive mixer. Exceptional linearity is
provided by the large LO swing from the on-chip LO
buffer. When combined with the integrated IF ampli­fiers, IIP3, 2LO-2RF rejection, and noise-figure perfor­mance are typically +24.5dBm, 67dBc, and 9.8dB,
respectively.

Differential IF Output Amplifier

The MAX19996A has an IF frequency range of 50MHz
to 500MHz, where the low-end frequency depends on
the frequency response of the external IF components.
The MAX19996A mixer is tuned for a 300MHz IF using
390nH external pullup bias inductors. Lower IF frequen­cies would require higher inductor values to maintain a
good IF match. The differential, open-collector IF output
ports require these inductors to be connected to V

CC

.

Note that these differential ports are ideal for providing
enhanced 2LO-2RF and 2RF-2LO performance. Single­ended IF applications require a 4:1 (impedance ratio)
balun to transform the 200Ω differential IF impedance
to a 50Ω single-ended system. Use the TC4-1W-17 4:1
transformer for IF frequencies above 200MHz and the
TC4-1W-7A 4:1 transformer for frequencies below
200MHz. The user can use a differential IF amplifier or
SAW filter on the mixer IF port, but a DC block is
required on both IF+/IF- ports to keep external DC from
entering the IF ports of the mixer.

Applications Information

Input and Output Matching

The RF input provides a 50Ω match when combined
with a series DC-blocking capacitor. Use an 8.2pF
capacitor value for RF frequencies ranging from
2000MHz to 3000MHz. A 1.5pF capacitor value should
be used to match the RF port for the 3000MHz to
3900MHz band. The LO input is internally matched to
50Ω; use a 2pF DC-blocking capacitor to cover opera­tions spanning the 2100MHz to 4000MHz LO range.
The IF output impedance is 200Ω (differential). For
evaluation, an external low-loss 4:1 (impedance ratio)
balun transforms this impedance down to a 50Ω single­ended output (see the

Typical Application Circuit

).

Reduced-Power Mode

The MAX19996A has two pins (LOBIAS, IFBIAS) that
allow external resistors to set the internal bias currents.
Nominal values for these resistors are given in Table 1.

Larger value resistors can be used to reduce power
dissipation at the expense of some performance loss.
If ±1% resistors are not readily available, substitute with
±5% resistors.

Significant reductions in power consumption can also
be realized by operating the mixer with an optional sup­ply voltage of 3.3V. Doing so reduces the overall power
consumption by up to 57%. See the

3.3V Supply AC

Electrical Characteristics—f

RF

= 2300MHz to 2900MHz,

High-Side LO Injection

table and the relevant 3.3V

curves in the

Typical Operating Characteristics

section

to evaluate the power vs. performance tradeoffs.

LEXT Inductor

Short LEXT to ground using a 0Ω resistor. For applica­tions requiring improved RF-to-IF and LO-to-IF isolation,
L3 can be changed to optimize performance (see the

Typical Operating Characteristics

). However, the load
impedance presented to the mixer must be so that any
capacitances from IF- and IF+ to ground do not exceed
several picofarads to ensure stable operating condi­tions. Since approximately 90mA flows through LEXT, it
is important to use a low-DCR wire-wound inductor.

Layout Considerations

A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
The load impedance presented to the mixer must be so
that any capacitance from both IF- and IF+ to ground
does not exceed several picofarads. For the best per­formance, route the ground pin traces directly to the
exposed pad under the package. The PCB exposed
pad MUST be connected to the ground plane of the
PCB. It is suggested that multiple vias be used to con­nect this pad to the lower-level ground planes. This
method provides a good RF/thermal-conduction path
for the device. Solder the exposed pad on the bottom
of the device package to the PCB. The MAX19996A
evaluation kit can be used as a reference for board lay­out. Gerber files are available upon request at

www.maxim-ic.com.

Power-Supply Bypassing

Proper voltage-supply bypassing is essential for high­frequency circuit stability. Bypass each VCCpin with
the capacitors shown in the

Typical Application Circuit

and Table 1.

Table 1. Component Values

Exposed Pad RF/Thermal Considerations

The exposed pad (EP) of the MAX19996A’s 20-pin thin
QFN-EP package provides a low thermal-resistance
path to the die. It is important that the PCB on which the
MAX19996A is mounted be designed to conduct heat
from the EP. In addition, provide the EP with a low­inductance path to electrical ground. The EP MUST be
soldered to a ground plane on the PCB, either directly
or through an array of plated via holes.

32 ______________________________________________________________________________________

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

MAX19996A

*Use 470nH inductors and TC4-1W-7A 4:1 balun for IF frequencies below 200MHz.

DESIGNATION QTY DESCRIPTION COMPONENT SUPPLIER

8.2pF microwave capacitor (0402). Use for RF frequencies

C1 1

C2, C6, C8, C11 4 0.01µF microwave capacitors (0402) Murata Electronics North America, Inc.

C3, C9 0 Not installed, capacitors —

C10 1 2pF microwave capacitor (0402) Murata Electronics North America, Inc.

C13, C14 2 1000pF microwave capacitors (0402) Murata Electronics North America, Inc.

C15 1 82pF microwave capacitor (0402) Murata Electronics North America, Inc.

L1, L2 2

L3 1 4.7nH wire-wound high-Q inductor (0603) Coilcraft, Inc.

R1 1

R2 1

R3 1 0Ω resistor (1206) Digi-Key Corp.

T1 1 4:1 IF balun TC4-1W-17* Mini-Circuits

U1 1 MAX19996A IC (20 TQFN-EP) Maxim Integrated Products, Inc.

ranging from 2000MHz to 3000MHz.

1.5pF microwave capacitor (0402). Use for RF frequencies
ranging from 3000MHz to 3900MHz.

390nH wire-wound high-Q inductors* (0805)
(see the Typical Operating Characteristics)

698Ω ±1% resistor (0402). Use for VCC = 5.0V applications.

1.1kΩ ±1% resistor (0402). Use for V

604Ω ±1% resistor (0402). Use for VCC = 5.0V applications.

845Ω ±1% resistor (0402). Use for V

= 3.3V applications.

CC

= 3.3V applications.

CC

Murata Electronics North America, Inc.

Coilcraft, Inc.

Digi-Key Corp.

Digi-Key Corp.

NOTE: PINS 3, 4, 5, 10, 12, 13, AND 17 ARE ALL INTERNALLY
CONNECTED TO THE EXPOSED GROUND PAD. CONNECT
THESE PINS TO GROUND TO IMPROVE ISOLATION.

PINS 9 AND 15 HAVE NO INTERNAL CONNECTION BUT CAN BE
EXTERNALLY GROUNDED TO IMPROVE ISOLATION.

MAX19996A

1920 18 17

768

RF

GND

GND

9

V

CC

1

2

4

5

15

14

12

11

LOBIAS

V

CC

N.C.

GND

GND

3

13

16

10

V

CC

V

CC

GND

GND

LO

N.C.

IF+

IF-

GND

LEXT

IFBIAS

EP

L1

L2

L3

C13

R3

R2

R1

C15

C10

C8

C9

C11

+5.0V

+5.0V

LO
INPUT

C6

C1

RF

INPUT

+5.0V

4:1

IF
OUTPUT

T1

326

14

C14

C3 C2

+5.0V

______________________________________________________________________________________ 33

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

MAX19996A

Typical Application Circuit

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz
Downconversion Mixer with LO Buffer

34 ______________________________________________________________________________________

Package Information

For the latest package outline information and land patterns, go
to www.maxim-ic.com/packages

.

PACKAGE TYPE PACKAGE CODE DOCUMENT NO.

20 Thin QFN-EP T2055+3

21-0140

MAX19996A

TOP VIEW

1920 18 17

768

RF

GND

GND

9

V

CC

1

2

4

5

15

14

12

11

LOBIAS

V

CC

N.C.

GND

GND

3

13

16

10

V

CC

V

CC

GND

GND

LO

N.C.

IF+

IF-

GND

LEXT

IFBIAS

EP

Pin Configuration/

Functional Diagram

Chip Information

PROCESS: SiGe BiCMOS

MAX19996A

SiGe, High-Linearity, 2000MHz to 3900MHz

Downconversion Mixer with LO Buffer

Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.

Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________

35

© 2009 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc.

Revision History

REVISION

NUMBER

0 1/09 Initial release —

1 5/09 Updated Electrical Characteristics table limits 6

REVISION

DATE

DESCRIPTION

PAGES

CHANGED