MAXIM MAX19995A Technical data

General Description

The MAX19995A dual-channel downconverter is
designed to provide 8.7dB of conversion gain,
+24.8dBm input IP3, +13.5dBm 1dB input compression
point, and a noise figure of 9.2dB for 1700MHz to
2200MHz diversity receiver applications. With an opti­mized LO frequency range of 1750MHz to 2700MHz, this
mixer is ideal for high-side LO injection architectures.
Low-side LO injection is supported by the MAX19995,
which is pin-pin and functionally compatible with the
MAX19995A.

In addition to offering excellent linearity and noise per­formance, the MAX19995A also yields a high level of
component integration. This device includes two double­balanced passive mixer cores, two LO buffers, a dual­input LO selectable switch, and a pair of differential IF
output amplifiers. Integrated on-chip baluns allow for sin­gle-ended RF and LO inputs. The MAX19995A requires a
nominal LO drive of 0dBm and a typical supply current of
350mA at V

CC

= 5.0V, or 242mA at VCC= 3.3V.

The MAX19995/MAX19995A are pin compatible with the
MAX19985/MAX19985A series of 700MHz to 1000MHz
mixers and pin similar to the MAX19997A/MAX19999
series of 1800MHz to 4000MHz mixers, making this
entire family of downconverters ideal for applications
where a common PCB layout is used across multiple
frequency bands.

The MAX19995A is available in a 6mm x 6mm, 36-pin
thin QFN package with an exposed pad. Electrical per­formance is guaranteed over the extended temperature
range (TC= -40°C to +85°C).

Applications

UMTS/WCDMA Base Stations

LTE/WiMAX™Base Stations

TD-SCDMA Base Stations

DCS1800/PCS1900 and GSM/EDGE Base
Stations

cdma2000

®

Base Stations

Fixed Broadband Wireless Access

Wireless Local Loop

Private Mobile Radios

Military Systems

Features

♦ 1700MHz to 2200MHz RF Frequency Range

♦ 1750MHz to 2700MHz LO Frequency Range

♦ 50MHz to 500MHz IF Frequency Range

♦ 8.7dB Typical Conversion Gain

♦ 9.2dB Typical Noise Figure

♦ +24.8dBm Typical Input IP3

♦ +13.5dBm Typical Input 1dB Compression Point

♦ 64dBc Typical 2LO-2RF Spurious Rejection at

P

RF

= -10dBm

♦ Dual Channels Ideal for Diversity Receiver

Applications

♦ 48dB Typical Channel-to-Channel Isolation

♦ Low -3dBm to +3dBm LO Drive

♦ Integrated LO Buffer

♦ Internal RF and LO Baluns for Single-Ended

Inputs

♦ Built-In SPDT LO Switch with 48dB LO-to-LO

Isolation and 50ns Switching Time

♦ Pin Compatible with the MAX19985/MAX19985A/

MAX19995 Series of 700MHz to 2200MHz Mixers

♦ Pin Similar to the MAX19997A/MAX19999 Series

of 1800MHz to 4000MHz Mixers

♦ Single 5.0V or 3.3V Supply

♦ External Current-Setting Resistors Provide Option

for Operating Device in Reduced-Power/Reduced­Performance Mode

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

________________________________________________________________

Maxim Integrated Products

1

Ordering Information

19-4419; Rev 0; 1/09

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.

+

Denotes a lead(Pb)-free/RoHS-compliant package.

*

EP = Exposed pad.

T = Tape and reel.

WiMAX is a trademark of WiMAX Forum.

cdma2000 is a registered trademark of Telecommunications
Industry Association.

PART TEMP RANGE PIN-PACKAGE

-40°C to +85°C 36 Thin QFN-EP*

-40°C to +85°C 36 Thin QFN-EP*

Pin Configuration/Functional Diagram appears at end of
data sheet.

MAX19995AETX+

MAX19995AETX+T

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, VCC= 4.75V to 5.25V, no input AC signals. TC= -40°C to +85°C, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ.

Typical values are at V

CC

= 5.0V, TC= +25°C, unless otherwise noted. All parameters are production tested.)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

Note 1: Based on junction temperature TJ= TC+ (θJCx VCCx ICC). This formula can be used when the temperature of the exposed

pad is known while the device is soldered down to a PCB. See the

Applications Information

section for details. The junction

temperature must not exceed +150°C.

Note 2: Junction temperature T

J

= TA+ (θJAx VCCx ICC). This formula can be used when the ambient temperature of the PCB is

known. The junction temperature must not exceed +150°C.

Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-

layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial

.

Note 4: T

C

is the temperature on the exposed pad of the package. TAis the ambient temperature of the device and PCB.

V

CC

to GND...........................................................-0.3V to +5.5V

LO1, LO2 to GND ..................................................-0.3V to +0.3V

LOSEL to GND ...........................................-0.3V to (V

CC

+ 0.3V)

RFMAIN, RFDIV, and LO_ Input Power ..........................+15dBm

RFMAIN, RFDIV Current (RF is DC shorted to GND

through a balun)..............................................................50mA

Continuous Power Dissipation (Note 1) ...............................8.7W

θ

JA

(Notes 2, 3)..............................................................+38°C/W

θ

JC

(Notes 1, 3)...............................................................7.4°C/W

Operating Case Temperature Range (Note 4) ....-40°C to +85°C

Junction Temperature......................................................+150°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, VCC= 3.0V to 3.6V, no input AC signals. TC= -40°C to +85°C, R1 = R4 = 909Ω, R2 = R5 = 1kΩ. Typical

values are at V

CC

= 3.3V, TC= +25°C, unless otherwise noted. Parameters are guaranteed by design and not production tested.)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

Supply Voltage V

Supply Current I

LOSEL Input High Voltage V

LOSEL Input Low Voltage V

LOSEL Input Current I

CC

CC

IH and IIL

Total supply current, VCC = 5.0V 350 410 mA

IH

IL

4.75 5 5.25 V

2V

0.8 V

-10 +10 µA

Supply Voltage V

Supply Current I

LOSEL Input High Voltage V

LOSEL Input Low Voltage V

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

CC

CC

Total supply current 242 300 mA

IH

IL

3.0 3.3 3.6 V

2V

0.8 V

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

_______________________________________________________________________________________ 3

RECOMMENDED AC OPERATING CONDITIONS

5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω sources,

P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 1700MHz to 2000MHz, fLO= 2050MHz to 2350MHz, fIF= 350MHz, fRF< fLO, TC= -40°C

to +85°C. Typical values are at V

CC

= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz, fLO= 2200MHz, fIF= 350MHz, TC= +25°C.

All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

RF Frequency f

LO Frequency f

IF Frequency f

LO Drive Level P

RF

LO

IF

LO

(Note 5) 1700 2200 MHz

(Note 5) 1750 2700 MHz

U si ng M i ni - C i r cui ts TC 4- 1W- 17 4:1
tr ansfor m er as d efi ned i n the Typ i cal
Ap p l i cati on C i r cui t, IF m atchi ng com p onents
affect the IF fr eq uency r ang e ( N ote 5)

U si ng al ter nati ve M i ni - C i r cui ts TC 4- 1W- 7A
4:1 tr ansfor m er as d efi ned i n the Typ i cal
Ap p l i cati on C i r cui t, IF m atchi ng com p onents
affect the IF fr eq uency r ang e ( N ote 5)

100 500

50 250

-3 +3 dBm

Conversion Gain G

Conversion Gain Flatness ΔG

Gain Variation Over Temperature TC

Input Compression Point IP

Input Third-Order Intercept Point IIP3

Input Third-Order Intercept Point
Variation Over Temperature

Noise Figure (Note 10) NF

Noise Figure Temperature
Coefficient

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

6.5 8.7 10.4

TC = +25°C (Note 7) 7.1 8.7 9.9

C

TC = +25°C, fRF = 1850MHz (Note 8) 7.7 8.7 9.7

Flatness over any one of three frequency

TC

TC

CG

1dB

IIP3

SSB

NF

bands:
f

= 1710MHz to 1785MHz

RF

C

fRF = 1850MHz to 1910MHz -0.03

fRF = 1920MHz to 1980MHz -0.13

fRF = 1700MHz to 2000MHz,
f

= 2050MHz to 2350MHz,

LO

= -40°C to +85°C

T

C

fRF = 1850MHz (Notes 7, 9) 9.5 13.5 dBm

f

- f

RF1

f

RF1

T

C

f

RF1

T

C

Single sideband, no blockers present 9.2 11.1

f

RF

P

LO

present

Single sideband, no blockers present,
T

C

= 1MHz, PRF = -5dBm per tone 21.5 24.8

RF2

- f

= 1MHz, PRF = -5dBm per tone,

RF2

= +25°C

- f

= 1MHz, PRF = -5dBm per tone,

RF2

= -40°C to +85°C

= 1850M H z, fLO = 2200M H z, TC = + 25° C ,

= 0dBm, single sideband, no blockers

= -40°C to +85°C

+0.07

-0.011 dB/°C

22 24.8

0.006 dBm/°C

9.2 9.8

0.016 dB/°C

MHz

dB

dB

dBm

dB

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

4 _______________________________________________________________________________________

5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)

(

Typical Application Circuit

, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω sources,

P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 1700MHz to 2000MHz, fLO= 2050MHz to 2350MHz, fIF= 350MHz, fRF< fLO, TC= -40°C

to +85°C. Typical values are at V

CC

= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz, fLO= 2200MHz, fIF= 350MHz, TC= +25°C.

All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

Noise Figure with Blocker NF

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

2LO-2RF Spur Rejection
(Note 10)

3LO-3RF Spur Rejection
(Note 10)

RF Input Return Loss

LO Input Return Loss

IF Output Impedance Z

IF Output Return Loss

RF-to-IF Isolation (Note 8) 31 35 dB

LO Leakage at RF Port (Note 8) -35 -25 dBm

2LO Leakage at RF Port (Note 8) -17.5 -14 dBm

LO Leakage at IF Port (Note 8) -32 -22 dBm

2 x 2

3 x 3

IF

P

BLOCKER

f

LO

B

P

LO

(Notes 10, 11)

fRF = 1850MHz,
f

LO

f

SPUR

f

RF

f

LO

f

SPUR

P

LO

T

C

fRF = 1850MHz,
f

LO

f

SPUR

f

RF

f

LO

f

SPUR

P

LO

T

C

LO and IF terminated into matched
impedance, LO on

LO port selected, RF and IF terminated into
matched impedance

LO port unselected, RF and IF terminated
into matched impedance

Nominal differential impedance of the IF
outputs

RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical

Application Circuit

= +8dBm, fRF = 1850MHz,

= 2200MHz, f

= 0dBm, VCC = 5.0V, TC = +25°C

= 2200MHz,

= 2025MHz

= 1850MHz,

= 2200MHz,

= 2025MHz,

= 0dBm, VCC = 5.0V,

= +25°C

= 2200MHz,

= 2083.33MHz

= 1850MHz,

= 2200MHz,

= 2083.33MHz,

= 0dBm, VCC = 5.0V,

= +25°C

BLOCKER

= 1725MHz,

PRF = -10dBm 54 64

P

= -5dBm 49 59

RF

PRF = -10dBm 57 64

P

= -5dBm 52 59

RF

PRF = -10dBm 70 80

P

= -5dBm 60 70

RF

PRF = -10dBm 71 80

P

= -5dBm 61 70

RF

19.7 23.4 dB

21 dB

20

22

200 Ω

11.5 dB

dBc

dBc

dB

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

_______________________________________________________________________________________ 5

3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS

(

Typical Application Circuit

, R1 = R4 = 909Ω, R2 = R5 = 1kΩ. Typical values are at VCC= 3.3V, PRF= -5dBm, PLO= 0dBm,

f

RF

= 1850MHz, fLO= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 6)

5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)

(

Typical Application Circuit

, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= 4.75V to 5.25V, RF and LO ports are driven from 50Ω sources,

P

LO

= -3dBm to +3dBm, PRF= -5dBm, fRF= 1700MHz to 2000MHz, fLO= 2050MHz to 2350MHz, fIF= 350MHz, fRF< fLO, TC= -40°C

to +85°C. Typical values are at V

CC

= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz, fLO= 2200MHz, fIF= 350MHz, TC= +25°C.

All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)

Channel Isolation (Note 7)

LO-to-LO Isolation

LO Switching Time

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50Ω

RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50Ω

P

= +3dBm, P

LO1

f

= 2200MHz, f

LO1

50% of LOSEL to IF settled within
2 degrees

= +3dBm,

LO2

= 2201MHz (Note 7)

LO2

40 48

40 48

40 48 dB

50 ns

Conversion Gain G

Conversion Gain Flatness ΔG

Gain Variation Over Temperature TC

Input Compression Point IP

Input Third-Order Intercept Point IIP3 f

Input Third-Order Intercept Point
Variation Over Temperature

Noise Figure NF

Noise Figure Temperature
Coefficient

2LO-2RF Spur Rejection 2 x 2

3LO-3RF Spur Rejection 3 x 3

RF Input Return Loss

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

(Note 8) 8.4 dB

C

Flatness over any one of three frequency

TC

TC

CG

1dB

IIP3

SSB

NF

bands:

= 1710MHz to 1785MHz

f

RF

C

fRF = 1850MHz to 1910MHz -0.03

fRF = 1920MHz to 1980MHz -0.13

TC = -40°C to +85°C -0.013 dB/°C

(Note 9) 10.2 dBm

- f

RF1

f

RF1

T

C

Single sideband, no blockers present 9 dB

Single sideband, no blockers present,
T

C

PRF = -10dBm 65

P

RF

PRF = -10dBm 77

P

RF

LO and IF terminated into matched
impedance, LO on

= 1MHz 22.5 dBm

RF2

- f

= 1MHz, PRF = -5dBm per tone,

RF2

= -40°C to +85°C

= -40°C to +85°C

= -5dBm 60

= -5dBm 67

+0.07

0.0017 dBm/°C

0.016 dB/°C

25 dB

dB

dB

dBc

dBc

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

6 _______________________________________________________________________________________

3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)

(

Typical Application Circuit

, R1 = R4 = 909Ω, R2 = R5 = 1kΩ. Typical values are at VCC= 3.3V, PRF= -5dBm, PLO= 0dBm,

f

RF

= 1850MHz, fLO= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.) (Note 6)

Note 5: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters.

See the

Typical Operating Characteristics

.

Note 6: All limits reflect losses of external components, including a 0.9dB loss at f

IF

= 350MHz due to the 4:1 transformer. Output

measurements were taken at IF outputs of the

Typical Application Circuit

.

Note 7: 100% production tested.
Note 8: 100% production tested for functionality.
Note 9: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50Ω source.
Note 10: Not production tested.
Note 11: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of

all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021:

Specifications and

Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers

.

LO Input Return Loss

IF Output Return Loss

RF-to-IF Isolation 36 dB

LO Leakage at RF Port -40 dBm

2LO Leakage at RF Port -23 dBm

LO Leakage at IF Port -37 dBm

Channel Isolation

LO-to-LO Isolation

LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

LO port selected, RF and IF terminated into
matched impedance

LO port unselected, RF and IF terminated
into matched impedance

RF terminated into 50Ω, LO driven by 50Ω
source, IF transformed to 50Ω using
external components shown in the Typical

Application Circuit

RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50Ω

RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50Ω

P

= +3dBm, P

LO1

= 2200MHz, f

f

LO1

= +3dBm,

LO2

= 2201MHz

LO2

22

16

11.5 dB

48

48

47 dB

dB

dB

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

_______________________________________________________________________________________ 7

CONVERSION GAIN vs. RF FREQUENCY

MAX19995A toc01

RF FREQUENCY (MHz)

CONVERSION GAIN (dB)

2100200019001800

7

8

9

10

6

1700 2200

TC = -30°C

TC = +25°C

TC = +85°C

CONVERSION GAIN vs. RF FREQUENCY

MAX19995A toc02

RF FREQUENCY (MHz)

CONVERSION GAIN (dB)

2100200019001800

7

8

9

10

6

1700 2200

PLO = -3dBm, 0dBm, +3dBm

CONVERSION GAIN vs. RF FREQUENCY

MAX19995A toc03

RF FREQUENCY (MHz)

CONVERSION GAIN (dB)

2100200019001800

7

8

9

10

6

1700 2200

VCC = 4.75V, 5.0V, 5.25V

INPUT IP3 vs. RF FREQUENCY

MAX19995A toc04

RF FREQUENCY (MHz)

INPUT IP3 (dBm)

2100200019001800

23

24

25

26

22

1700 2200

TC = +85°C

PRF = -5dBm/TONE

TC = +25°C

TC = -30°C

INPUT IP3 vs. RF FREQUENCY

MAX19995A toc05

RF FREQUENCY (MHz)

INPUT IP3 (dBm)

2100200019001800

23

24

25

26

22

1700 2200

PLO = 0dBm

PLO = -3dBm

PLO = +3dBm

PRF = -5dBm/TONE

INPUT IP3 vs. RF FREQUENCY

MAX19995A toc06

RF FREQUENCY (MHz)

INPUT IP3 (dBm)

2100200019001800

23

24

25

26

22

1700 2200

PRF = -5dBm/TONE

VCC = 4.75V

VCC = 5.25V

VCC = 5.0V

NOISE FIGURE vs. RF FREQUENCY

MAX19995A toc07

RF FREQUENCY (MHz)

NOISE FIGURE (dB)

2100200019001800

7

8

11

9

12

10

6

1700 2200

TC = -30°C

TC = +25°C

TC = +85°C

NOISE FIGURE vs. RF FREQUENCY

MAX19995A toc08

RF FREQUENCY (MHz)

NOISE FIGURE (dB)

2100200019001800

7

8

11

9

12

10

6

1700 2200

PLO = -3dBm, 0dBm, +3dBm

NOISE FIGURE vs. RF FREQUENCY

MAX19995A toc09

RF FREQUENCY (MHz)

NOISE FIGURE (dB)

2100200019001800

7

8

11

9

12

10

6

1700 2200

VCC = 4.75V, 5.0V, 5.25V

Typical Operating Characteristics

(

Typical Application Circuit

, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,

f

LO

= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)

_______________________________________________________________________________________ 7

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

8 _______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,

f

LO

= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)

2LO-2RF RESPONSE vs. RF FREQUENCY

MAX19995A toc10

RF FREQUENCY (MHz)

2LO-2RF RESPONSE (dBc)

2100200019001800

50

70

60

80

90

40

1700 2200

TC = -30°C

TC = +25°C

TC = +85°C

PRF = -5dBm

2LO-2RF RESPONSE vs. RF FREQUENCY

MAX19995A toc11

RF FREQUENCY (MHz)

2LO-2RF RESPONSE (dBc)

2100200019001800

50

70

60

80

90

40

1700 2200

PRF = -5dBm

PLO = 0dBmPLO = -3dBm

PLO = +3dBm

2LO-2RF RESPONSE vs. RF FREQUENCY

MAX19995A toc12

RF FREQUENCY (MHz)

2LO-2RF RESPONSE (dBc)

2100200019001800

50

70

60

80

90

40

1700 2200

PRF = -5dBm

VCC = 4.75V, 5.0V, 5.25V

3LO-3RF RESPONSE vs. RF FREQUENCY

MAX19995A toc13

RF FREQUENCY (MHz)

3LO-3RF RESPONSE (dBc)

2100200019001800

75

65

85

55

1700 2200

TC = -30°C

TC = +25°C

TC = +85°C

PRF = -5dBm

3LO-3RF RESPONSE vs. RF FREQUENCY

MAX19995A toc14

RF FREQUENCY (MHz)

3LO-3RF RESPONSE (dBc)

2100200019001800

75

65

85

55

1700 2200

PRF = -5dBm

PLO = -3dBm, 0dBm, +3dBm

3LO-3RF RESPONSE vs. RF FREQUENCY

MAX19995A toc15

RF FREQUENCY (MHz)

3LO-3RF RESPONSE (dBc)

2100200019001800

75

65

85

55

1700 2200

PRF = -5dBm

VCC = 4.75V

VCC = 5.25V

VCC = 5.0V

INPUT P

1dB

vs. RF FREQUENCY

MAX19995A toc16

RF FREQUENCY (MHz)

INPUT P

1dB

(dBm)

2100200019001800

12

14

13

15

16

11

1700 2200

TC = -30°C

TC = +25°C

TC = +85°C

INPUT P

1dB

vs. RF FREQUENCY

MAX19995A toc17

RF FREQUENCY (MHz)

INPUT P

1dB

(dBm)

2100200019001800

12

14

13

15

16

11

1700 2200

PLO = -3dBm, 0dBm, +3dBm

INPUT P

1dB

vs. RF FREQUENCY

MAX19995A toc18

RF FREQUENCY (MHz)

INPUT P

1dB

(dBm)

2100200019001800

12

14

13

15

16

11

1700 2200

VCC = 4.75V

VCC = 5.25V

VCC = 5.0V

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

_______________________________________________________________________________________ 9

CHANNEL ISOLATION vs. RF FREQUENCY

MAX19995A toc19

RF FREQUENCY (MHz)

CHANNEL ISOLATION (dB)

2100200019001800

45

50

55

40

1700 2200

TC = -30°C, +25°C, +85°C

CHANNEL ISOLATION vs. RF FREQUENCY

MAX19995A toc20

RF FREQUENCY (MHz)

CHANNEL ISOLATION (dB)

2100200019001800

45

50

55

40

1700 2200

PLO = -3dBm, 0dBm, +3dBm

CHANNEL ISOLATION vs. RF FREQUENCY

RF FREQUENCY (MHz)

CHANNEL ISOLATION (dB)

2100200019001800

45

50

55

40

1700 2200

VCC = 4.75V, 5.0V, 5.25V

MAX19995A toc21

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

LO FREQUENCY (MHz)

LO LEAKAGE AT IF PORT (dBm)

2450 2550235022502150

-30

-35

-25

-20

-40
2050

MAX19995A toc22

TC = -30°C

TC = +25°C

TC = +85°C

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

LO FREQUENCY (MHz)

LO LEAKAGE AT IF PORT (dBm)

2450 2550235022502150

-30

-35

-25

-20

-40
2050

MAX19995A toc23

PLO = -3dBm, 0dBm, +3dBm

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

LO FREQUENCY (MHz)

LO LEAKAGE AT IF PORT (dBm)

2450 2550235022502150

-30

-35

-25

-20

-40
2050

MAX19995A toc24

VCC = 4.75V

VCC = 5.25V

VCC = 5.0V

RF-TO-IF ISOLATION

vs. RF FREQUENCY

RF FREQUENCY (MHz)

RF-TO-IF ISOLATION (dB)

2100 2200200019001800

35

40

45

30

1700

MAX19995A toc25

TC = -30°C

TC = +25°C

TC = +85°C

RF-TO-IF ISOLATION

vs. RF FREQUENCY

RF FREQUENCY (MHz)

RF-TO-IF ISOLATION (dB)

2100 2200200019001800

35

40

45

30

1700

PLO = -3dBm, 0dBm, +3dBm

MAX19995A toc26

RF-TO-IF ISOLATION

vs. RF FREQUENCY

RF FREQUENCY (MHz)

RF-TO-IF ISOLATION (dB)

2100 2200200019001800

35

40

45

30

1700

MAX19995A toc27

VCC = 4.75V, 5.0V, 5.25V

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,

f

LO

= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)

_______________________________________________________________________________________ 9

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

10 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,

f

LO

= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-20

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-20

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-20

TC = +25°C

-30

-40

LO LEAKAGE AT RF PORT (dBm)

TC = +85°C

-50
1750

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

-10

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
1750

vs. LO FREQUENCY

TC = +25°C

TC = +85°C

LO FREQUENCY (MHz)

TC = -30°C

TC = -30°C

MAX19995A toc28

2550 2750235021501950

MAX19995A toc31

2550 2750235021501950

PLO = -3dBm

-30

-40

LO LEAKAGE AT RF PORT (dBm)

-50
1750

PLO = 0dBm

PLO = +3dBm

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

-20

-30

PLO = 0dBm

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
1750

PLO = -3dBm

LO FREQUENCY (MHz)

2550 2750235021501950

PLO = +3dBm

2550 2750235021501950

MAX19995A toc29

-30

-40

LO LEAKAGE AT RF PORT (dBm)

-50
1750

-10

MAX19995A toc32

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
1750

VCC = 4.75V, 5.0V, 5.25V

2550 2750235021501950

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

2550 2750235021501950

LO FREQUENCY (MHz)

MAX19995A toc30

MAX19995A toc33

LO SWITCH ISOLATION

vs. LO FREQUENCY

60

TC = -30°C

50

40

LO SWITCH ISOLATION (dB)

30

TC = +85°C

1750

LO FREQUENCY (MHz)

TC = +25°C

LO SWITCH ISOLATION

vs. LO FREQUENCY

60

MAX19995A toc34

50

40

LO SWITCH ISOLATION (dB)

2550 2750235021501950

30

1750

PLO = -3dBm, 0dBm, +3dBm

2550 2750235021501950

LO FREQUENCY (MHz)

60

MAX19995A toc35

50

40

LO SWITCH ISOLATION (dB)

30

1750

LO SWITCH ISOLATION

vs. LO FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

LO FREQUENCY (MHz)

MAX19995A toc36

2550 2750235021501950

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________ 11

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,

f

LO

= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)

RF PORT RETURN LOSS

vs. RF FREQUENCY

0

5

10

15

20

RF PORT RETURN LOSS (dB)

25

30

PLO = -3dBm, 0dBm, +3dBm

1700

RF FREQUENCY (MHz)

LO UNSELECTED RETURN LOSS

vs. LO FREQUENCY

0

5

10

15

20

25

LO UNSELECTED RETURN LOSS (dB)

30

1750

PLO = -3dBm, 0dBm, +3dBm

LO FREQUENCY (MHz)

0

fIF = 350MHz

MAX19995A toc37

2100 2200200019001800

L = L1, L2, L4, L5

L = 120nH

5

10

IF PORT RETURN LOSS (dB)

15

L = 470nH

20

50

SUPPLY CURRENT vs. TEMPERATURE (TC)

400

380

MAX19995A toc40

360

340

SUPPLY CURRENT (mA)

320

300

2550 2750235021501950

-35

IF PORT RETURN LOSS

vs. IF FREQUENCY

VCC = 4.75V, 5.0V, 5.25V

L = 330nH

IF FREQUENCY (MHz)

VCC = 5.25V

VCC = 5.0V

VCC = 4.75V

TEMPERATURE (°C)

fLO = 2300MHz

410 500320230140

65 8525 455-15

0

MAX19995A toc38

5

PLO = -3dBm, 0dBm, +3dBm

10

15

20

LO SELECTED RETURN LOSS (dB)

25

30

1750

CONVERSION GAIN vs. RF FREQUENCY

(VARIOUS VALUES OF L3 AND L6)

11

10

MAX19995A toc41

9

8

CONVERSION GAIN (dB)

7

6

1700

LO SELECTED RETURN LOSS

vs. LO FREQUENCY

MAX19995A toc39

2550 2750235021501950

LO FREQUENCY (MHz)

MAX19995A toc42

0Ω, 3.6nH, 6.8nH, 10nH

22002000 210019001800

RF FREQUENCY (MHz)

(VARIOUS VALUES OF L3 AND L6)

26

25

24

INPUT IP3 (dBm)

23

22

1700

INPUT IP3 vs. RF FREQUENCY

PRF = -5dBm/TONE

0Ω, 3.6nH, 6.8nH, 10nH

RF FREQUENCY (MHz)

22002000 210019001800

90

80

MAX19995A toc43

70

60

2LO-2RF RESPONSE (dBc)

50

40

1700

2LO-2RF RESPONSE vs. RF FREQUENCY

(VARIOUS VALUES OF L3 AND L6)

PRF = -5dBm

0Ω

6.8nH, 10nH

RF FREQUENCY (MHz)

3.6nH

MAX19995A toc44

22002000 210019001800

3LO-3RF RESPONSE vs. RF FREQUENCY

(VARIOUS VALUES OF L3 AND L6)

85

75

65

3LO-3RF RESPONSE (dBc)

55

1700

0Ω, 3.6nH, 6.8nH, 10nH

RF FREQUENCY (MHz)

PRF = -5dBm

MAX19995A toc45

22002000 210019001800

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

12 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 681Ω, R2 = R5 = 1.5kΩ, VCC= 5.0V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,

f

LO

= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)

CHANNEL ISOLATION vs. RF FREQUENCY

(VARIOUS VALUES OF L3 AND L6)

55

10nH

50

RF-TO-IF ISOLATION vs. RF FREQUENCY

(VARIOUS VALUES OF L3 AND L6)

50

6.8nH

40

6.8nH

MAX19995A toc46

LO LEAKAGE AT IF PORT vs. LO FREQUENCY

(VARIOUS VALUES OF L3 AND L6)

-20

-30

0Ω

10nH

MAX19995A toc47

10nH

MAX19995A toc48

45

CHANNEL ISOLATION (dB)

40

1700

0Ω

RF FREQUENCY (MHz)

3.6nH

-40

-50

LO LEAKAGE AT IF PORT (dBm)

22002000 210019001800

-60
2050

6.8nH

3.6nH

LO FREQUENCY (MHz)

30

RF-TO-IF ISOLATION (dB)

20

10

25502350 245022502150

1700

RF FREQUENCY (MHz)

3.6nH

0Ω

22002000 210019001800

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________ 13

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 909Ω, R2 = R5 = 1kΩ, VCC= 3.3V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,

f

LO

= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)

CONVERSION GAIN vs. RF FREQUENCY

10

9

8

CONVERSION GAIN (dB)

7

6

1700 19001800 2000 2100 2200

TC = -30°C

TC = +85°C

RF FREQUENCY (MHz)

INPUT IP3 vs. RF FREQUENCY

24

TC = +85°C

23

22

CONVERSION GAIN vs. RF FREQUENCY

VCC = 3.3V

MAX19995A toc49

TC = +25°C

10

9

8

CONVERSION GAIN (dB)

7

6

1700 19001800 2000 2100 2200

INPUT IP3 vs. RF FREQUENCY

MAX19995A toc52

24

PLO = +3dBm

23

22

TC = +25°C

PRF = -5dBm/TONE

VCC = 3.3V

VCC = 3.3V

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

PRF = -5dBm/TONE

VCC = 3.3V

10

MAX19995A toc50

CONVERSION GAIN (dB)

24

23

MAX19995A toc53

22

CONVERSION GAIN vs. RF FREQUENCY

9

8

VCC = 3.0V

7

6

1700 19001800 2000 2100 2200

RF FREQUENCY (MHz)

VCC = 3.6V

VCC = 3.3V

INPUT IP3 vs. RF FREQUENCY

VCC = 3.6V

PRF = -5dBm/TONE

MAX19995A toc51

MAX19995A toc54

21

INPUT IP3 (dBm)

20

TC = -30°C

19

18

1700 2200

19001800 2000 2100

RF FREQUENCY (MHz)

NOISE FIGURE vs. RF FREQUENCY

12

TC = +85°C

11

10

9

NOISE FIGURE (dB)

8

TC = -30°C

7

6

1700 2200

19001800 2000 2100

RF FREQUENCY (MHz)

VCC = 3.3V

TC = +25°C

MAX19995A toc55

21

INPUT IP3 (dBm)

20

PLO = -3dBm

19

18

1700 2200

19001800 2000 2100

RF FREQUENCY (MHz)

PLO = 0dBm

NOISE FIGURE vs. RF FREQUENCY

12

11

10

9

NOISE FIGURE (dB)

8

7

6

1700 2200

PLO = -3dBm, 0dBm, +3dBm

19001800 2000 2100

RF FREQUENCY (MHz)

VCC = 3.3V

MAX19995A toc56

21

INPUT IP3 (dBm)

20

19

18

VCC = 3.0V

1700 2200

RF FREQUENCY (MHz)

VCC = 3.3V

19001800 2000 2100

NOISE FIGURE vs. RF FREQUENCY

12

11

10

9

NOISE FIGURE (dB)

8

7

6

1700 2200

VCC = 3.0V, 3.3V, 3.6V

19001800 2000 2100

RF FREQUENCY (MHz)

MAX19995A toc57

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 909Ω, R2 = R5 = 1kΩ, VCC= 3.3V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,

f

LO

= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

14 ______________________________________________________________________________________

2LO-2RF RESPONSE vs. RF FREQUENCY

80

70

60

2LO-2RF RESPONSE (dBc)

50

40

1700 19001800 2000 2100 2200

TC = +85°C

TC = -30°C

RF FREQUENCY (MHz)

3LO-3RF RESPONSE vs. RF FREQUENCY

80

TC = +85°C

70

60

3LO-3RF RESPONSE (dBc)

TC = +25°C

PRF = -5dBm

VCC = 3.3V

TC = +25°C

PRF = -5dBm

VCC = 3.3V

TC = -30°C

80

MAX19995A toc58

70

60

2LO-2RF RESPONSE (dBc)

50

40

1700 19001800 2000 2100 2200

80

MAX19995A toc61

70

60

3LO-3RF RESPONSE (dBc)

2LO-2RF RESPONSE vs. RF FREQUENCY

VCC = 3.3V

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

PRF = -5dBm

3LO-3RF RESPONSE vs. RF FREQUENCY

PRF = -5dBm

PLO = +3dBm

PLO = 0dBm

VCC = 3.3V

PLO = -3dBm

2LO-2RF RESPONSE vs. RF FREQUENCY

80

MAX19995A toc59

70

60

2LO-2RF RESPONSE (dBc)

50

40

1700 19001800 2000 2100 2200

3LO-3RF RESPONSE vs. RF FREQUENCY

80

MAX19995A toc62

70

60

3LO-3RF RESPONSE (dBc)

VCC = 3.6V

VCC = 3.0V

PRF = -5dBm

MAX19995A toc60

VCC = 3.0V, 3.3V, 3.6V

RF FREQUENCY (MHz)

PRF = -5dBm

MAX19995A toc63

VCC = 3.3V

MAX19995A toc65

50

1700 19001800 2000 2100 2200

RF FREQUENCY (MHz)

INPUT P

12

11

(dBm)

1dB

10

INPUT P

9

8

1700 19001800 2000 2100 2200

1dB

VCC = 3.6V

VCC = 3.0V

RF FREQUENCY (MHz)

50

1700 19001800 2000 2100 2200

RF FREQUENCY (MHz)

INPUT P

12

11

(dBm)

1dB

10

INPUT P

9

8

1700 19001800 2000 2100 2200

vs. RF FREQUENCY

1dB

TC = +85°C

TC = -30°C

RF FREQUENCY (MHz)

VCC = 3.3V

TC = +25°C

MAX19995A toc64

50

1700 19001800 2000 2100 2200

RF FREQUENCY (MHz)

INPUT P

12

11

(dBm)

1dB

10

INPUT P

PLO = 0dBm, +3dBm

9

8

1700 19001800 2000 2100 2200

vs. RF FREQUENCY

1dB

RF FREQUENCY (MHz)

VCC = 3.3V

PLO = -3dBm

vs. RF FREQUENCY

MAX19995A toc66

VCC = 3.3V

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________ 15

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 909Ω, R2 = R5 = 1kΩ, VCC= 3.3V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,

f

LO

= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)

CHANNEL ISOLATION vs. RF FREQUENCY

55

50

45

CHANNEL ISOLATION (dB)

TC = -30°C, +25°C, +85°C

40

1700 19001800 2000 2100 2200

RF FREQUENCY (MHz)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

-30

-35

CHANNEL ISOLATION vs. RF FREQUENCY

55

50

45

CHANNEL ISOLATION (dB)

40

1700 19001800 2000 2100 2200

-30

-35

TC = +85°C

VCC = 3.3V

MAX19995A toc67

VCC = 3.3V

MAX19995A toc70

VCC = 3.3V

PLO = -3dBm, 0dBm, +3dBm

RF FREQUENCY (MHz)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

VCC = 3.3V

55

MAX19995A toc68

50

45

CHANNEL ISOLATION (dB)

40

-30

MAX19995A toc71

-35

CHANNEL ISOLATION vs. RF FREQUENCY

MAX19995A toc69

VCC = 3.0V, 3.3V, 3.6V

1700 19001800 2000 2100 2200

RF FREQUENCY (MHz)

LO LEAKAGE AT IF PORT

vs. LO FREQUENCY

VCC = 3.6V

MAX19995A toc72

-40
TC = -30°C

-45

LO LEAKAGE AT IF PORT (dBm)

-50

2050 22502150 2350 2450 2550

LO FREQUENCY (MHz)

TC = +25°C

RF-TO-IF ISOLATION

vs. RF FREQUENCY

45

40

35

RF-TO-IF ISOLATION (dB)

30

TC = +85°C

TC = -30°C

1700 2200

RF FREQUENCY (MHz)

VCC = 3.3V

TC = +25°C

200019001800 2100

-40

-45

LO LEAKAGE AT IF PORT (dBm)

-50
2050 22502150 2350 2450 2550

45

MAX19995A toc73

40

35

RF-TO-IF ISOLATION (dB)

30

1700 2200

PLO = -3dBm, 0dBm, +3dBm

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

vs. RF FREQUENCY

PLO = -3dBm, 0dBm, +3dBm

200019001800 2100

RF FREQUENCY (MHz)

VCC = 3.3V

-40

-45

LO LEAKAGE AT IF PORT (dBm)

-50
2050 2550

45

MAX19995A toc74

40

35

RF-TO-IF ISOLATION (dB)

30

1700 2200

VCC = 3.0V

LO FREQUENCY (MHz)

RF-TO-IF ISOLATION

vs. RF FREQUENCY

VCC = 3.0V, 3.3V, 3.6V

RF FREQUENCY (MHz)

VCC = 3.3V

235022502150 2450

MAX19995A toc75

200019001800 2100

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

16 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 909Ω, R2 = R5 = 1kΩ, VCC= 3.3V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,

f

LO

= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-30

TC = -30°C

-40

VCC = 3.3V

MAX19995A toc76

-30

-40

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-30

VCC = 3.3V

MAX19995A toc77

-40

LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 3.6V

MAX19995A toc78

-50
TC = +85°C

LO LEAKAGE AT RF PORT (dBm)

-60

1750 2750

TC = +25°C

235021501950 2550

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

-10

-20

-30

TC = +85°C

-40

2LO LEAKAGE AT RF PORT (dBm)

-50

1750 2750

LO FREQUENCY (MHz)

235021501950 2550

LO SWITCH ISOLATION

vs. LO FREQUENCY

60

TC = -30°C

50

VCC = 3.3V

TC = -30°C

TC = +25°C

VCC = 3.3V

-50

LO LEAKAGE AT RF PORT (dBm)

-60
1750 2750

-10

MAX19995A toc79

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
1750 2750

60

MAX19995A toc82

50

PLO = -3dBm, 0dBm, +3dBm

235021501950 2550

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 3.3V

PLO = +3dBm

PLO = -3dBm

PLO = 0dBm

235021501950 2550

LO FREQUENCY (MHz)

LO SWITCH ISOLATION

vs. LO FREQUENCY

VCC = 3.3V

VCC = 3.0V

-50

LO LEAKAGE AT RF PORT (dBm)

-60
1750 2750

-10

MAX19995A toc80

-20

-30

-40

2LO LEAKAGE AT RF PORT (dBm)

-50
1750 2750

60

MAX19995A toc83

50

VCC = 3.3V

235021501950 2550

LO FREQUENCY (MHz)

2LO LEAKAGE AT RF PORT

vs. LO FREQUENCY

VCC = 3.6V

VCC = 3.3V

VCC = 3.0V

235021501950 2550

LO FREQUENCY (MHz)

LO SWITCH ISOLATION

vs. LO FREQUENCY

MAX19995A toc81

MAX19995A toc84

40

LO SWITCH ISOLATION (dB)

TC = +85°C

30

1750 2750

LO FREQUENCY (MHz)

TC = +25°C

235021501950 2550

40

LO SWITCH ISOLATION (dB)

30

1750 2750

PLO = -3dBm, 0dBm, +3dBm

235021501950 2550

LO FREQUENCY (MHz)

40

LO SWITCH ISOLATION (dB)

30

1750 2750

VCC = 3.0V, 3.3V, 3.6V

LO FREQUENCY (MHz)

235021501950 2550

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________ 17

Typical Operating Characteristics (continued)

(

Typical Application Circuit

, R1 = R4 = 909Ω, R2 = R5 = 1kΩ, VCC= 3.3V, PRF= -5dBm, PLO= 0dBm, fRF= 1850MHz,

f

LO

= 2200MHz, fIF= 350MHz, TC= +25°C, unless otherwise noted.)

RF PORT RETURN LOSS

vs. RF FREQUENCY

0

5

10

15

PLO = -3dBm, 0dBm, +3dBm

20

RF PORT RETURN LOSS (dB)

25

30

1700 2200

0

L = L1, L2, L4, L5

5

10

IF PORT RETURN LOSS (dB)

15

L = 470nH

20

50 500

200019001800 2100

RF FREQUENCY (MHz)

fIF = 350MHz

= 3.3V

V

CC

MAX19995A toc85

LO UNSELECTED RETURN LOSS

vs. LO FREQUENCY

0

5

10

15

20

PLO = -3dBm, 0dBm, +3dBm

25

LO UNSELECTED RETURN LOSS (dB)

VCC = 3.3V

IF PORT RETURN LOSS

vs. IF FREQUENCY

fLO = 2300MHz

L = 120nH

L = 330nH

320230140 410

IF FREQUENCY (MHz)

SUPPLY CURRENT vs. TEMPERATURE (TC)

280

260

MAX19995A toc88

240

220

SUPPLY CURRENT (mA)

200

V

CC

= 3.3V

VCC = 3.0V

MAX19995A toc86

VCC = 3.6V

LO SELECTED RETURN LOSS

vs. LO FREQUENCY

0

5

10

PLO = -3dBm, 0dBm, +3dBm

15

20

LO SELECTED RETURN LOSS (dB)

25

30

1750 2750

LO FREQUENCY (MHz)

VCC = 3.3V

235021501950 2550

MAX19995A toc89

VCC = 3.3V

MAX19995A toc87

30

1750 2750

LO FREQUENCY (MHz)

235021501950 2550

180

-15 6525 455

-35 85
TEMPERATURE (°C)

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

18 ______________________________________________________________________________________

Pin Description

PIN NAME FUNCTION

1 RFMAIN Main Channel RF input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.

2 TAPMAIN

3, 5, 7, 12,
20, 22, 24,

25, 26, 34

GND Ground

Main Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.

4, 6, 10, 16,

21, 30, 36

8 TAPDIV

9 RFDIV Diversity Channel RF input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.

11 IFD_SET

13, 14 IFD+, IFD-

15 IND_EXTD

17 LO_ADJ_D

18, 28 N.C. No Connection. Not internally connected.

19 LO1 Local Osci l l ator 1 Inp ut. Thi s i np ut i s i nter nal l y m atched to 50Ω . Req ui r es an i np ut D C - b l ocki ng cap aci tor .

23 LOSEL Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2.

27 LO2 Local Osci l l ator 2 Inp ut. Thi s i np ut i s i nter nal l y m atched to 50Ω . Req ui r es an i np ut D C - b l ocki ng cap aci tor .

29 LO_ADJ_M

31 IND_EXTM

V

CC

Power Supply. Bypass to GND with capacitors as shown in the Typical Application Circuit as close as
possible to the pin.

Diversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.

IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the diversity IF amplifier (see the Typical Operating Characteristics for typical performance vs.
resistor value).

Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
the Typical Application Circuit).

Diversity External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and LO-to­IF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Operating
Characteristics for typical performance vs. inductor value).

LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current
for the diversity LO amplifier (see the Typical Operating Characteristics for typical performance vs.
resistor value).

LO M ai n Am p l i fi er Bi as C ontr ol . C onnect a r esi stor fr om thi s p i n to g r ound to set the b i as cur r ent for the
m ai n LO am p l i fi er ( see the Typical Operating Characteristics for typ i cal p er for m ance vs. r esi stor val ue) .

Main External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and LO-to-IF
isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Operating
Characteristics for typical performance vs. inductor value).

CC

(see

32, 33 IFM-, IFM+

35 IFM_SET

—EP

Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
Typical Application Circuit).

IF M ai n Am p l i fi er Bi as C ontr ol . C onnect a r esi stor fr om thi s p i n to g r ound to set the b i as cur r ent for the
m ai n IF am p l i fi er ( see the Typical Operating Characteristics for typ i cal p er for m ance vs. r esi stor val ue) .

Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple
ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple
ground vias are also required to achieve the noted RF performance.

(see the

CC

Detailed Description

The MAX19995A is a dual-channel downconverter
designed to provide up to 8.7dB of conversion gain,
+24.8dBm input IP3, +13.5dBm 1dB input compression
point, and a noise figure as low as 9.2dB.

In addition to its high-linearity performance, the
MAX19995A achieves a high level of component inte­gration. The device integrates two double-balanced
mixers for two-channel downconversion. Both the main
and diversity channels include a balun and matching
circuitry to allow 50Ω single-ended interfaces to the RF
ports and the two LO ports. An integrated single­pole/double-throw (SPDT) switch provides 50ns switch­ing time between the two LO inputs, with 48dB of
LO-to-LO isolation and -35dBm of LO leakage at the RF
port. Furthermore, the integrated LO buffers provide a
high drive level to each mixer core, reducing the LO
drive required at the MAX19995A’s inputs to a range of

-3dBm to +3dBm. The IF ports for both channels incor­porate differential outputs for downconversion, which
are ideal for providing enhanced 2LO-2RF performance.

Specifications are guaranteed over broad frequency
ranges to allow for use in UMTS/WCDMA, LTE/WiMAX,
DCS1800/PCS1900 GSM/EDGE, TD-SCDMA, and
cdma2000 base stations. The MAX19995A is specified
to operate over an RF input range of 1700MHz to
2200MHz, an LO range of 1750MHz to 2700MHz, and
an IF range of 50MHz to 500MHz. The external IF com­ponents set the lower frequency range (see the

Typical

Operating Characteristics

for details). Operation

beyond these ranges is possible; see the

Typical

Operating Characteristics

for additional information.
Although this device is optimized for high-side LO
injection applications, it can operate in low-side LO
injection modes as well. However, performance
degrades as f

LO

continues to decrease. For increased
low-side LO performance, refer to the MAX19995 data
sheet.

RF Port and Balun

The RF input ports of both the main and diversity chan­nels are internally matched to 50Ω, requiring no exter­nal matching components. A DC-blocking capacitor is
required as the input is internally DC shorted to ground
through the on-chip balun. The RF port input return loss
is typically better than 16.5dB over the RF frequency
range of 1700MHz to 2200MHz.

LO Inputs, Buffer, and Balun

The MAX19995A is optimized for a 1750MHz to
2700MHz LO frequency range. As an added feature,
the MAX19995A includes an internal LO SPDT switch
for use in frequency-hopping applications. The switch
selects one of the two single-ended LO ports, allowing
the external oscillator to settle on a particular frequency
before it is switched in. LO switching time is typically
50ns, which is more than adequate for typical GSM
applications. If frequency hopping is not employed,
simply set the switch to either of the LO inputs. The
switch is controlled by a digital input (LOSEL), where
logic-high selects LO1 and logic-low selects LO2. LO1
and LO2 inputs are internally matched to 50Ω, requiring
only 39pF DC-blocking capacitors.

If LOSEL is connected directly to a logic source, then
voltage MUST be applied to V

CC

before digital logic is
applied to LOSEL to avoid damaging the part.
Alternatively, a 1kΩ resistor can be placed in series at
the LOSEL to limit the input current in applications
where LOSEL is applied before VCC.

The main and diversity channels incorporate a two­stage LO buffer that allows for a wide-input power
range for the LO drive. The on-chip low-loss baluns,
along with LO buffers, drive the double-balanced mix­ers. All interfacing and matching components from the
LO inputs to the IF outputs are integrated on-chip.

High-Linearity Mixer

The core of the MAX19995A dual-channel downcon­verter consists of two double-balanced, high-perfor­mance passive mixers. Exceptional linearity is provided
by the large LO swing from the on-chip LO buffers.
When combined with the integrated IF amplifiers, the
cascaded IIP3, 2LO-2RF rejection, and noise-figure
performance are typically +24.8dBm, 64dBc, and

9.2dB, respectively.

Differential IF

The MAX19995A has an IF frequency range of 50MHz
to 500MHz, where the low-end frequency depends on
the frequency response of the external IF components.
Note that these differential ports are ideal for providing
enhanced IIP2 performance. Single-ended IF applica­tions require a 4:1 (impedance ratio) balun to transform
the 200Ω differential IF impedance to a 50Ω single­ended system. After the balun, the return loss is typical­ly 11.5dB. The user can use a differential IF amplifier on
the mixer IF ports, but a DC block is required on both
IFD+/IFD- and IFM+/IFM- ports to keep external DC
from entering the IF ports of the mixer.

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________ 19

MAX19995A

Applications Information

Input and Output Matching

The RF and LO inputs are internally matched to 50Ω.
No matching components are required. The RF port
input return loss is typically better than 16.5dB over the
RF frequency range of 1700MHz to 2200MHz and
return loss at the LO ports is typically better than 15dB
over the entire LO range. RF and LO inputs require only
DC-blocking capacitors for interfacing.

The IF output impedance is 200Ω (differential). For
evaluation, an external low-loss 4:1 (impedance ratio)
balun transforms this impedance to a 50Ω single-ended
output (see the

Typical Application Circuit

).

Reduced-Power Mode

Each channel of the MAX19995A has two pins
(LO_ADJ_ _, IF_ _SET) that allow external resistors to
set the internal bias currents. Nominal values for these
resistors are given in Table 1. Larger value resistors
can be used to reduce power dissipation at the
expense of some performance loss. If ±1% resistors
are not readily available, substitute with ±5% resistors.

Significant reductions in power consumption can also
be realized by operating the mixer with an optional sup­ply voltage of 3.3V. Doing so reduces the overall power
consumption by up to 54%. See the

3.3V Supply AC

Electrical Characteristics

table and the relevant 3.3V

curves in the

Typical Operating Characteristics

section.

IND_EXT_ Inductors

For applications requiring optimum RF-to-IF and LO-to­IF isolation, connect low-ESR inductors from IND_EXT_
(pins 15 and 31) to ground. When improved isolation is
not required, connect IND_EXT_ to ground using 0Ω
resistance. See the

Typical Operating Characteristics

to

evaluate the isolation vs. inductor value tradeoff.

Layout Considerations

A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
The load impedance presented to the mixer must be so
that any capacitance from both IF- and IF+ to ground
does not exceed several picofarads. For the best per­formance, route the ground pin traces directly to the
exposed pad under the package. The PCB exposed
pad MUST be connected to the ground plane of the
PCB. It is suggested that multiple vias be used to con­nect this pad to the lower-level ground planes. This
method provides a good RF/thermal-conduction path
for the device. Solder the exposed pad on the bottom
of the device package to the PCB. The MAX19995A
evaluation kit can be used as a reference for board lay­out. Gerber files are available upon request at

www.maxim-ic.com

.

Power-Supply Bypassing

Proper voltage-supply bypassing is essential for high­frequency circuit stability. Bypass each VCCpin and
TAPMAIN/TAPDIV with the capacitors shown in the

Typical Application Circuit

(see Table 1 for component
values). Place the TAPMAIN/TAPDIV bypass capacitors
to ground within 100 mils of the pin.

Exposed Pad RF/Thermal Considerations

The exposed pad (EP) of the MAX19995A’s 36-pin thin
QFN-EP package provides a low thermal-resistance
path to the die. It is important that the PCB on which the
MAX19995A is mounted be designed to conduct heat
from the EP. In addition, provide the EP with a low­inductance path to electrical ground. The EP MUST be
soldered to a ground plane on the PCB, either directly
or through an array of plated via holes.

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

20 ______________________________________________________________________________________

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

______________________________________________________________________________________ 21

Table 1. Component Values

DESIGNATION QTY DESCRIPTION COMPONENT SUPPLIER

C1, C2, C7, C8,

C14, C16

C3, C6 2 0.033µF microwave capacitors (0603) Murata Electronics North America, Inc.

C4, C5 2 Not used —

C9, C13, C15,

C17, C18

C10, C11, C12,

C19, C20, C21

L1, L2, L4, L5 4 120nH wire-wound high-Q inductors (0805) Coilcraft, Inc.

L3, L6 2

R1, R4 2

R2, R5 2

R3, R6 2 0Ω resistors (1206) Digi-Key Corp.

T1, T2 2 4:1 transformers (200:50) TC4-1W-17 Mini-Circuits

U1 1 MAX19995A IC (36 TQFN-EP) Maxim Integrated Products, Inc.

6 39pF microwave capacitors (0402) Murata Electronics North America, Inc.

5 0.01µF microwave capacitors (0402) Murata Electronics North America, Inc.

6 150pF microwave capacitors (0603) Murata Electronics North America, Inc.

10nH wire-wound high-Q inductors (0603). Smaller values can
be used at the expense of some performance loss (see the
Typical Operating Characteristics).

681Ω ±1% resistors (0402). Used for VCC = 5.0V applications.
Larger values can be used to reduce power at the expense of
some performance loss (see the Typical Operating
Characteristics).

909Ω ±1% resistors (0402). Used for V

1.5kΩ ±1% resistors (0402). Used for VCC = 5.0V applications.
Larger values can be used to reduce power at the expense of
some performance loss (see the Typical Operating
Characteristics).

1kΩ ±1% resistors (0402). Used for V

= 3.3V applications.

CC

= 3.3V applications.

CC

Coilcraft, Inc.

Digi-Key Corp.

Digi-Key Corp.

22 ______________________________________________________________________________________

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

MAX19995A

Typical Application Circuit

C19

RF MAIN INPUT

V

CC

C4

V

CC

C5

RF DIV INPUT

T1

4:1

V

CC

C17

LO2

27

GND

26

GND

25

GND

24

LOSEL

23

GND

22

V

CC

21

GND

20

LO1

19

V

CC

C16

V

C14

IF MAIN OUTPUT

LO2

LO SELECT

CC

C15

LO1

R3

31

EXPOSED

PAD

15

V

CC

V

CC

L3

30

16

L1

C21

L2

LO_ADJ_M

29

17

LO_ADJ_D

C20

R2

N.C.

28

18

N.C.

R5

V

CC

R1

V

CC

C18

CC

V

GND

V

GND

V

GND

RFDIV

V

CC

+

1

2

3

CC

4

5

CC

6

7

8

9

CC

V

R4

C1

RFMAIN

TAPMAIN

C2C3

C7C6

TAPDIV

C8

C9

36

10

IFM_SET

35

11

IFD_SET

GND

GND

IFM-

IFM+

34

IND_EXTM

32

33

MAX19995A

IFD+

14

13

IFD-

IND_EXTD

12

L6

V

CC

R6

C11

L5

C12

L4

C10

C13

T2

IF DIV OUTPUT

4:1

MAX19995A

Dual, SiGe, High-Linearity, 1700MHz to 2200MHz

Downconversion Mixer with LO Buffer/Switch

Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.

Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________

23

© 2009 Maxim Integrated Products is a registered trademark of Maxim Integrated Products, Inc.

Pin Configuration/Functional Diagram

Chip Information

PROCESS: SiGe BiCMOS

Package Information

For the latest package outline information and land patterns, go
to www.maxim-ic.com/packages

.

PACKAGE TYPE PACKAGE CODE DOCUMENT NO.

36 Thin QFN-EP T3666+2

21-0141

TOP VIEW

RFMAIN

TAPMAIN

GND

V

CC

GND

V

CC

GND

TAPDIV

RFDIV

CC

V

IFM_SET

GND

36

35

11

IFD_SET

34

12

GND

+

1

2

3

4

5

6

7

8

9

10

CC

V

IFM+

33

13

IFD+

IFM-

32

14

IFD-

CC

IND_EXTM

V

31

30

MAX19995A

EXPOSED

PAD

15

16

CC

V

IND_EXTD

LO_ADJ_M

N.C.

29

28

17

18

N.C.

LO_ADJ_D

27

LO2

26

GND

25

GND

24

GND

23

LOSEL

22

GND

21

V

CC

20

GND

19

LO1

THIN QFN (EXPOSED PAD)

6mm x 6mm

EXPOSED PAD ON THE BOTTOM OF THE PACKAGE