MAXIM MAX19994A Technical data
19-5197; Rev 0; 4/10
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
General Description
The MAX19994A dual-channel downconverter is
designed to provide 8.4dB of conversion gain, +25dBm
input IP3, +14dBm 1dB input compression point, and a
noise figure of 9.8dB for 1200MHz to 2000MHz diversity
receiver applications. With an optimized LO frequency
range of 1450MHz to 2050MHz, this mixer supports both
high- and low-side LO injection architectures for the
1200MHz to 1700MHz and 1700MHz to 2000MHz RF
bands, respectively.
In addition to offering excellent linearity and noise performance, the device also yields a high level of component
integration. This device includes two double-balanced
passive mixer cores, two LO buffers, a dual-input LO
selectable switch, and a pair of differential IF output
amplifiers. Integrated on-chip baluns allow for singleended RF and LO inputs. The MAX19994A requires a
nominal LO drive of 0dBm and a typical supply current of
330mA at V
= 5.0V, or 264mA at VCC = 3.3V.
CC
The MAX19994A is pin compatible with the MAX9985/
M AX9995/MAX19985A/MAX1 9 9 9 3 / M A X 1 9 9 9 5 /
MAX19995A series of 700MHz to 2500MHz mixers
and pin similar with the MAX19997A/MAX19999 series
of 1850MHz to 4000MHz mixers, making this entire
family of downconverters ideal for applications where a
common PCB layout is used across multiple frequency
bands.
The device is available in a 6mm x 6mm, 36-pin thin QFN
package with an exposed pad. Electrical performance is
guaranteed over the extended temperature range, from
= -40NC to +85NC.
T
C
Applications
WCDMA/LTE Base Stations
TD-SCDMA Base Stations
GSM/EDGE Base Stations
M
cdma2000
Wireless Local Loop
Fixed Broadband Wireless Access
Private Mobile Radios
Military Systems
Base Stations
Features
S 1200MHz to 2000MHz RF Frequency Range
S 1450MHz to 2050MHz LO Frequency Range
S 50MHz to 500MHz IF Frequency Range
S 8.4dB Typical Conversion Gain
S 9.8dB Typical Noise Figure
S +25dBm Typical Input IP3
S +14dBm Typical Input 1dB Compression Point
S 68dBc Typical 2LO - 2RF Spurious Rejection at
= -10dBm
P
RF
S Dual Channels Ideal for Diversity Receiver
Applications
S 47dB Typical Channel-to-Channel Isolation
S Low -6dBm to +3dBm LO Drive
S Integrated LO Buffer
S Internal RF and LO Baluns for Single-Ended
Inputs
S Built-In SPDT LO Switch with 48dB LO-to-LO
Isolation and 50ns Switching Time
S Pin Compatible with the MAX9985/MAX9995/
MAX19985A/MAX19993/MAX19995/MAX19995A
Series of 700MHz to 2200MHz Mixers
S Pin Similar to the MAX19997A/MAX19999 Series
of 1850MHz to 4000MHz Mixers
S Single 5.0V or 3.3V Supply
S External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/ReducedPerformance Mode
Ordering Information
PART TEMP RANGE PIN-PACKAGE
MAX19994AETX+
MAX19994AETX+T
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
-40NC to +85NC
-40NC to +85NC
36 Thin QFN-EP*
36 Thin QFN-EP*
MAX19994A
cdma2000 is a registered trademark of Telecommunications
Industry Association.
_______________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
VCC to GND ..........................................................-0.3V to +5.5V
LO1, LO2 to GND .................................................-0.3V to +0.3V
LOSEL to GND .........................................-0.3V to (VCC + 0.3V)
RFMAIN, RFDIV, and LO_ Input Power ........................+15dBm
RFMAIN, RFDIV Current
(RF is DC shorted to GND through a balun) ...................50mA
Continuous Power Dissipation (Note 1) ..............................8.7W
B
(Notes 1, 3) ............................................................ +38NC/W
JA
Note 1: Junction temperature TJ = TA + (BJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is
MAX19994A
Note 2: Based on junction temperature T
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
Note 4: T
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
known. The junction temperature must not exceed +150NC.
= TC + (BJC x VCC x ICC). This formula can be used when the temperature of the
exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details.
The junction temperature must not exceed +150NC.
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
C
J
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 4.75V to 5.25V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.82kI.
Typical values are at V
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage V
Supply Current I
LOSEL Input High Voltage V
LOSEL Input Low Voltage V
LOSEL Input Current I
= 5.0V, TC = +25NC, unless otherwise noted. All parameters are production tested.)
CC
CC
CC
IH and IIL
Total supply current 330 420 mA
IH
IL
(Notes 2, 3) ..............................................................7.4NC/W
B
JC
Operating Case Temperature
Range (Note 4) ................................................. -40NC to +85NC
Junction Temperature .....................................................+150NC
Storage Temperature Range ............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
4.75 5 5.25 V
2 V
0.8 V
-10 +10
FA
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 3.0V to 3.6V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.43kI.
Typical values are at V
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage V
Supply Current I
LOSEL Input High Voltage V
LOSEL Input Low Voltage V
= 3.3V, TC = +25NC, unless otherwise noted.)
CC
CC
CC
Total supply current 264 mA
IH
IL
3.0 3.3 3.6 V
2 V
0.8 V
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF Frequency f
LO Frequency f
2
RF
LO
C1 = C8 = 39pF (Note 5) 1200 1700
C1 = C8 = 1.8pF, L7 = L8 = 4.7nH (Note 5) 1700 2000
(Note 5) 1450 2050 MHz
MHz
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO
Buffer/Switch
RECOMMENDED AC OPERATING CONDITIONS (continued)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Using Mini-Circuits TC4-1W-17 4:1 trans-
IF Frequency f
LO Drive Level P
IF
LO
former as defined in the Typical Application
Circuit, IF matching components affect the
IF frequency range (Note 5)
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer as defined in the Typical
Application Circuit, IF matching components
affect the IF frequency range (Note 5)
(Note 5) -6 +3 dBm
100 500
MHz
50 250
5.0V SUPPLY, HIGH-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V
to 5.25V, RF and LO ports are driven from 50I sources, P
f
= 1550MHz to 2050MHz, fIF = 350MHz, fRF < fLO, TC = -40NC to +85NC. Typical values are at V
LO
PLO = 0dBm, f
characterization, unless otherwise noted.) (Note 6)
Conversion Gain G
Conversion Gain Flatness DG
Gain Variation Over Temperature TC
Input Compression Point IP
Input Third-Order Intercept Point IIP3
Input Third-Order Intercept Point
Variation Over Temperature
Noise Figure (Note 9) NF
Noise Figure Temperature
Coefficient
Noise Figure with Blocker NF
= 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC. All parameters are guaranteed by design and
RF
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
T
= +25NC (Note 7) 7.0 8.4 9.0
C
CG
1dBfRF
TC
IIP3
SSB
TC
NF
C
T
= +25NC, fRF = 1427MHz to 1463MHz
C
(Note 7)
fRF = 1427MHz to 1463MHz Q0.05 dB
C
TC = -40NC to +85NC -0.01 dB/NC
= 1450MHz (Notes 7, 8) 12.6 14.0 dBm
f
RF1
f
RF1
f
= 1427MHz to 1463MHz, TC = +25NC
RF
(Note 7)
f
RF1
f
= 1427MHz to 1463MHz
RF
f
RF1
T
= -40NC to +85NC
C
Single sideband, no blockers present 9.8 13
f
= 1427MHz to 1463MHz, TC = +25NC,
RF
P
LO
present
f
= 1427MHz to 1463MHz, PLO = 0dBm,
RF
single sideband, no blockers present
Single sideband, no blockers present,
T
= -40NC to +85NC
C
P
BLOCKER
f
LO
B
P
LO
(Notes 9, 10)
= -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz,
LO
= 5.0V, PRF = -5dBm,
CC
6.2 8.4 9.8
7.9 8.4 8.9
- f
= 1MHz, PRF = -5dBm per tone 21.5 25.0
RF2
- f
= 1MHz, PRF = -5dBm per tone,
RF2
23.0 25.0
- f
= 1MHz, PRF = -5dBm per tone,
RF2
- f
= 1MHz, PRF = -5dBm per tone,
RF2
= 0dBm, single sideband, no blockers
= +8dBm, fRF = 1450MHz,
= 1800MHz, f
= 0dBm, VCC = 5.0V, TC = +25NC
BLOCKER
= 1350MHz,
22 25.0
Q0.75 dBm
9.8 11
9.8 12.5
0.016 dB/NC
20.2 22 dB
dB
dBm
dB
MAX19994A
3
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
5.0V SUPPLY, HIGH-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V
to 5.25V, RF and LO ports are driven from 50I sources, P
f
= 1550MHz to 2050MHz, fIF = 350MHz, fRF < fLO, TC = -40NC to +85NC. Typical values are at V
LO
PLO = 0dBm, f
characterization, unless otherwise noted.) (Note 6)
MAX19994A
2LO - 2RF Spur Rejection (Note 9) 2 x 2
3LO - 3RF Spur Rejection (Note 9) 3 x 3
RF Input Return Loss
LO Input Return Loss
IF Output Impedance Z
IF Output Return Loss
RF-to-IF Isolation (Note 7) 19 30 dB
LO Leakage at RF Port (Note 7) -42 dBm
2LO Leakage at RF Port (Note 7) -30 dBm
LO Leakage at IF Port (Note 7) -35 dBm
Channel Isolation (Note 7)
LO-to-LO Isolation
LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns
= 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC. All parameters are guaranteed by design and
RF
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
= 1450MHz,
f
RF
f
LO
f
SPUR
f
= 1450MHz,
RF
f
LO
f
SPUR
P
LO
T
= +25NC
C
= 1450MHz,
f
RF
f
LO
f
SPUR
f
= 1450MHz,
RF
f
LO
f
SPUR
P
LO
T
= +25NC
C
LO and IF terminated into matched
impedance, LO “on”
LO port selected, RF and IF terminated into
matched impedance
LO port unselected, RF and IF terminated
into matched impedance
Nominal differential impedance of the IF
IF
outputs
RF terminated into 50I, LO driven by
50I source, IF transformed to 50I using
external components shown in the Typical
Application Circuit
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50I
RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50I
P
LO1
f
LO1
= -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz,
LO
= 5.0V, PRF = -5dBm,
CC
P
= -10dBm 57 68
= 1800MHz,
= 1625MHz
= 1800MHz,
= 1625MHz,
= 0dBm, VCC = 5.0V,
= 1800MHz,
= 1683.33MHz
= 1800MHz,
= 1683.33MHz,
= 0dBm, VCC = 5.0V,
= +3dBm, P
= 1800MHz, f
= +3dBm,
LO2
LO2
= 1801MHz (Note 7)
RF
= -5dBm 52 63
P
RF
P
= -10dBm 58 68
RF
= -5dBm 53 63
P
RF
P
= -10dBm 68 84
RF
= -5dBm 58 74
P
RF
P
= -10dBm 70 84
RF
= -5dBm 60 74
P
RF
43 47
43 47
42 48 dB
17 dB
16
20
200
13.0 dB
dBc
dBc
dB
I
dB
4
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO
Buffer/Switch
3.3V SUPPLY, HIGH-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical
values are at V
noted.) (Note 6)
Conversion Gain G
Conversion Gain Flatness DG
Gain Variation Over Temperature TC
Input Compression Point IP
Input Third-Order Intercept Point IIP3 f
Input Third-Order Intercept Point
Variation Over Temperature
Noise Figure NF
Noise Figure Temperature Coefficient TC
2LO - 2RF Spur Rejection 2 x 2
3LO - 3RF Spur Rejection 3 x 3
RF Input Return Loss
LO Input Return Loss
IF Output Return Loss
RF-to-IF Isolation 31 dB
LO Leakage at RF Port -49 dBm
2LO Leakage at RF Port -40 dBm
LO Leakage at IF Port -35 dBm
Channel Isolation
LO-to-LO Isolation
LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns
= 3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC, unless otherwise
CC
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
(Note 7) 8.2 dB
C
fRF = 1427MHz to 1463MHz ±0.05 dB
C
TC = -40NC to +85NC -0.01 dB/NC
CG
1dB
TC
(Note 8) 10.6 dBm
- f
RF1
f
IIP3
SSB
RF1
T
C
Single sideband, no blockers present 9.8 dB
Single sideband, no blockers present,
NF
T
C
P
RF
P
RF
P
RF
P
RF
LO and IF terminated into matched
impedance, LO “on”
LO port selected, RF and IF terminated into
matched impedance
LO port unselected, RF and IF terminated
into matched impedance
RF terminated into 50I, LO driven by
50I source, IF transformed to 50I using
external components shown in the Typical
Application Circuit
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50I
RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50I
P
LO1
f
LO1
= 1MHz 23.6 dBm
RF2
- f
= 1MHz, PRF = -5dBm per tone,
RF2
= -40NC to +85NC
= -40NC to +85NC
= -10dBm 68
= -5dBm 63
= -10dBm 77
= -5dBm 67
= +3dBm, P
= 1800MHz, f
= +3dBm,
LO2
= 1801MHz
LO2
±0.5 dBm
0.016 dB/NC
15 dB
18
21
12.5 dB
48
48
50 dB
dBc
dBc
dB
dB
MAX19994A
5
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
5.0V SUPPLY, LOW-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the Extended RF Band (see Table 1), R1 = R4 = 681I, R2 = R5 = 1.82kI. Typical
values are at V
noted.) (Note 6)
Conversion Gain G
Conversion Gain Flatness DG
Gain Variation Over Temperature TC
Input Compression Point IP
MAX19994A
Input Third-Order Intercept Point IIP3 f
Input Third-Order Intercept Point
Variation Over Temperature
Noise Figure NF
Noise Figure Temperature Coefficient TC
2RF - 2LO Spur Rejection 2 x 2
3RF - 3LO Spur Rejection 3 x 3
RF Input Return Loss
LO Input Return Loss
IF Output Return Loss
RF-to-IF Isolation 37 dB
LO Leakage at RF Port -52 dBm
2LO Leakage at RF Port -29 dBm
LO Leakage at IF Port -19.4 dBm
Channel Isolation
LO-to-LO Isolation
LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns
Note 5: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters.
See the Typical Operating Characteristics.
= 5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1850MHz, fLO = 1500MHz, fIF = 350MHz, TC = +25NC, unless otherwise
CC
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
7.9 dB
Q0.06 dB
Q0.6 dBm
0.017 dB/NC
14 dB
29
28
14.5 dB
43
43
54 dB
TC
C
CG
1dB
IIP3
SSB
NF
fRF = 1700MHz to 2000MHz, over any
C
100MHz band
TC = -40NC to +85NC -0.007 dB/NC
(Note 8) 13.9 dBm
- f
RF1
f
RF1
T
C
Single sideband, no blockers present 10.2 dB
Single sideband, no blockers present,
T
C
P
RF
P
RF
P
RF
P
RF
LO and IF terminated into matched
impedance, LO “on”
LO port selected, RF and IF terminated into
matched impedance
LO port unselected, RF and IF terminated
into matched impedance
RF terminated into 50I, LO driven by
50I source, IF transformed to 50I using
external components shown in the Typical
Application Circuit
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50I
RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50I
P
LO1
f
LO1
= 1MHz 24.9 dBm
RF2
- f
= 1MHz, PRF = -5dBm per tone,
RF2
= -40NC to +85NC
= -40NC to +85NC
= -10dBm 68
= -5dBm 63
= -10dBm 87
= -5dBm 77
= +3dBm, P
= 1500MHz, f
= +3dBm,
LO2
= 1501MHz
LO2
dBc
dBc
dB
dB
6
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO
Buffer/Switch
Note 6: All limits reflect losses of external components, including a 0.8dB loss at fIF = 350MHz due to the 4:1 transformer. Output
measurements were taken at IF outputs of the Typical Application Circuit.
Note 7: 100% production tested for functionality.
Note 8: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50I source.
Note 9: Not production tested.
Note 10: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects
of all SNR degradations in the mixer, including the LO noise, as defined in Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
Typical Operating Characteristics
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P
CONVERSION GAIN vs. RF FREQUENCY
10
9
8
TC = +85°C
CONVERSION GAIN (dB)
7
TC = -40°C
TC = +25°C
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
CONVERSION GAIN vs. RF FREQUENCY
10
MAX19994A toc01
9
8
CONVERSION GAIN (dB)
7
PLO = -6dBm, -3dBm, 0dBm, +3dBm
10
MAX19994A toc02
9
8
CONVERSION GAIN (dB)
7
CONVERSION GAIN vs. RF FREQUENCY
VCC = 4.75V, 5.0V, 5.25V
MAX19994A
MAX19994A toc03
6
1200 1700
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
27
TC = +85°C
26
25
24
INPUT IP3 (dBm)
TC = +25°C
23
22
1200 1700
RF FREQUENCY (MHz)
= -5dBm/TONE
P
RF
TC = -40°C
1600150014001300
6
1200 1700
RF FREQUENCY (MHz)
1600150014001300
INPUT IP3 vs. RF FREQUENCY
27
PLO = +3dBm
26
MAX19994A toc04
25
24
INPUT IP3 (dBm)
23
1600150014001300
22
1200 1700
PLO = -3dBm
RF FREQUENCY (MHz)
PLO = 0dBm
P
= -5dBm/TONE
RF
PLO = -6dBm
1600150014001300
MAX19994A toc05
6
1200 1700
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
27
26
25
24
INPUT IP3 (dBm)
23
22
1200 1700
VCC = 5.25V
VCC = 5.0V
RF FREQUENCY (MHz)
P
= -5dBm/TONE
RF
VCC = 4.75V
1600150014001300
MAX19994A toc06
1600150014001300
7
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
NOISE FIGURE vs. RF FREQUENCY
12
TC = +85°C
11
10
MAX19994A
9
NOISE FIGURE (dB)
8
7
6
TC = -40°C
1200 1700
RF FREQUENCY (MHz)
2LO - 2RF RESPONSE vs. RF FREQUENCY
80
70
60
2LO - 2RF RESPONSE (dBc)
50
1200 1700
TC = +85°C
TC = -40°C
RF FREQUENCY (MHz)
TC = +25°C
1600150014001300
PRF = -5dBm
TC = +25°C
1600150014001300
12
11
MAX19994A toc07
10
9
NOISE FIGURE (dB)
8
7
6
1200 1700
2LO - 2RF RESPONSE vs. RF FREQUENCY
80
MAX19994A toc10
70
60
2LO - 2RF RESPONSE (dBc)
50
1200 1700
NOISE FIGURE vs. RF FREQUENCY
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1600150014001300
RF FREQUENCY (MHz)
PRF = -5dBm
PLO = +3dBm
PLO = -3dBm
PLO = -6dBm
RF FREQUENCY (MHz)
PLO = 0dBm
1600150014001300
12
11
MAX19994A toc08
10
9
NOISE FIGURE (dB)
8
7
6
1200 1700
2LO - 2RF RESPONSE vs. RF FREQUENCY
80
MAX19994A toc11
70
60
2LO - 2RF RESPONSE (dBc)
50
1200 1700
NOISE FIGURE vs. RF FREQUENCY
MAX19994A toc09
VCC = 4.75V, 5.0V, 5.25V
1600150014001300
RF FREQUENCY (MHz)
PRF = -5dBm
MAX19994A toc12
VCC = 4.75V, 5.0V, 5.25V
1600150014001300
RF FREQUENCY (MHz)
3LO - 3RF RESPONSE vs. RF FREQUENCY
95
85
75
3LO - 3RF RESPONSE (dBc)
65
55
TC = +85°C
TC = -40°C
1200 1700
RF FREQUENCY (MHz)
8
= -5dBm
P
RF
TC = +25°C
1600150014001300
3LO - 3RF RESPONSE vs. RF FREQUENCY
95
MAX19994A toc13
85
75
3LO - 3RF RESPONSE (dBc)
65
55
1200 1700
PLO = -6dBm
PLO = -3dBm, 0dBm, +3dBm
RF FREQUENCY (MHz)
P
RF
= -5dBm
1600150014001300
3LO - 3RF RESPONSE vs. RF FREQUENCY
95
MAX19994A toc14
85
75
3LO - 3RF RESPONSE (dBc)
65
55
1200 1700
VCC = 4.75V
VCC = 5.0V
RF FREQUENCY (MHz)
= -5dBm
P
RF
VCC = 5.25V
1600150014001300
MAX19994A toc15
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
MAX19994A
INPUT P
16
15
14
(dBm)
1dB
13
INPUT P
TC = -40°C
12
11
1200 1700
vs. RF FREQUENCY
1dB
TC = +85°C
TC = +25°C
RF FREQUENCY (MHz)
CHANNEL ISOLATION vs. RF FREQUENCY
60
55
50
45
40
CHANNEL ISOLATION (dB)
35
TC = -40°C, +25°C, +85°C
INPUT P
16
15
MAX19994A toc16
14
(dBm)
1dB
13
INPUT P
12
1600150014001300
11
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1200 1700
vs. RF FREQUENCY
1dB
RF FREQUENCY (MHz)
MAX19994A toc17
(dBm)
1dB
INPUT P
1600150014001300
CHANNEL ISOLATION vs. RF FREQUENCY
60
55
MAX19994A toc19
50
45
40
CHANNEL ISOLATION (dB)
35
PLO = -6dBm, -3dBm, 0dBm, +3dBm
MAX19994A toc20
CHANNEL ISOLATION (dB)
INPUT P
16
15
VCC = 5.0V
14
13
12
11
1200 1700
CHANNEL ISOLATION vs. RF FREQUENCY
60
55
50
45
40
35
vs. RF FREQUENCY
1dB
VCC = 5.25V
VCC = 4.75V
RF FREQUENCY (MHz)
VCC = 4.75V, 5.0V, 5.25V
MAX19994A toc18
1600150014001300
MAX19994A toc21
30
1200 1700
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-20
-25
-30
-35
-40
LO LEAKAGE AT IF PORT (dBm)
-45
-50
TC = +25°C
1550 2050
LO FREQUENCY (MHz)
TC = +85°C
TC = -40°C
1600150014001300
30
1200 1700
RF FREQUENCY (MHz)
1600150014001300
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-20
-25
MAX19994A toc22
-30
-35
-40
LO LEAKAGE AT IF PORT (dBm)
-45
1950185017501650
-50
PLO = +3dBm
PLO = 0dBm
PLO = -3dBm
PLO = -6dBm
1550 2050
LO FREQUENCY (MHz)
1950185017501650
30
1200 1700
-20
-25
MAX19994A toc23
-30
-35
-40
LO LEAKAGE AT IF PORT (dBm)
-45
-50
1550 2050
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
VCC = 5.25V
VCC = 4.75V
LO FREQUENCY (MHz)
VCC = 5.0V
1600150014001300
MAX19994A toc24
1950185017501650
9
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