19-5197; Rev 0; 4/10
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
General Description
The MAX19994A dual-channel downconverter is
designed to provide 8.4dB of conversion gain, +25dBm
input IP3, +14dBm 1dB input compression point, and a
noise figure of 9.8dB for 1200MHz to 2000MHz diversity
receiver applications. With an optimized LO frequency
range of 1450MHz to 2050MHz, this mixer supports both
high- and low-side LO injection architectures for the
1200MHz to 1700MHz and 1700MHz to 2000MHz RF
bands, respectively.
In addition to offering excellent linearity and noise performance, the device also yields a high level of component
integration. This device includes two double-balanced
passive mixer cores, two LO buffers, a dual-input LO
selectable switch, and a pair of differential IF output
amplifiers. Integrated on-chip baluns allow for singleended RF and LO inputs. The MAX19994A requires a
nominal LO drive of 0dBm and a typical supply current of
330mA at V
= 5.0V, or 264mA at VCC = 3.3V.
CC
The MAX19994A is pin compatible with the MAX9985/
M AX9995/MAX19985A/MAX1 9 9 9 3 / M A X 1 9 9 9 5 /
MAX19995A series of 700MHz to 2500MHz mixers
and pin similar with the MAX19997A/MAX19999 series
of 1850MHz to 4000MHz mixers, making this entire
family of downconverters ideal for applications where a
common PCB layout is used across multiple frequency
bands.
The device is available in a 6mm x 6mm, 36-pin thin QFN
package with an exposed pad. Electrical performance is
guaranteed over the extended temperature range, from
= -40NC to +85NC.
T
C
Applications
WCDMA/LTE Base Stations
TD-SCDMA Base Stations
GSM/EDGE Base Stations
M
cdma2000
Wireless Local Loop
Fixed Broadband Wireless Access
Private Mobile Radios
Military Systems
Base Stations
Features
S 1200MHz to 2000MHz RF Frequency Range
S 1450MHz to 2050MHz LO Frequency Range
S 50MHz to 500MHz IF Frequency Range
S 8.4dB Typical Conversion Gain
S 9.8dB Typical Noise Figure
S +25dBm Typical Input IP3
S +14dBm Typical Input 1dB Compression Point
S 68dBc Typical 2LO - 2RF Spurious Rejection at
= -10dBm
P
RF
S Dual Channels Ideal for Diversity Receiver
Applications
S 47dB Typical Channel-to-Channel Isolation
S Low -6dBm to +3dBm LO Drive
S Integrated LO Buffer
S Internal RF and LO Baluns for Single-Ended
Inputs
S Built-In SPDT LO Switch with 48dB LO-to-LO
Isolation and 50ns Switching Time
S Pin Compatible with the MAX9985/MAX9995/
MAX19985A/MAX19993/MAX19995/MAX19995A
Series of 700MHz to 2200MHz Mixers
S Pin Similar to the MAX19997A/MAX19999 Series
of 1850MHz to 4000MHz Mixers
S Single 5.0V or 3.3V Supply
S External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/ReducedPerformance Mode
Ordering Information
PART TEMP RANGE PIN-PACKAGE
MAX19994AETX+
MAX19994AETX+T
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
-40NC to +85NC
-40NC to +85NC
36 Thin QFN-EP*
36 Thin QFN-EP*
MAX19994A
cdma2000 is a registered trademark of Telecommunications
Industry Association.
_______________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
VCC to GND ..........................................................-0.3V to +5.5V
LO1, LO2 to GND .................................................-0.3V to +0.3V
LOSEL to GND .........................................-0.3V to (VCC + 0.3V)
RFMAIN, RFDIV, and LO_ Input Power ........................+15dBm
RFMAIN, RFDIV Current
(RF is DC shorted to GND through a balun) ...................50mA
Continuous Power Dissipation (Note 1) ..............................8.7W
B
(Notes 1, 3) ............................................................ +38NC/W
JA
Note 1: Junction temperature TJ = TA + (BJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is
MAX19994A
Note 2: Based on junction temperature T
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
Note 4: T
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
known. The junction temperature must not exceed +150NC.
= TC + (BJC x VCC x ICC). This formula can be used when the temperature of the
exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details.
The junction temperature must not exceed +150NC.
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
C
J
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 4.75V to 5.25V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.82kI.
Typical values are at V
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage V
Supply Current I
LOSEL Input High Voltage V
LOSEL Input Low Voltage V
LOSEL Input Current I
= 5.0V, TC = +25NC, unless otherwise noted. All parameters are production tested.)
CC
CC
CC
IH and IIL
Total supply current 330 420 mA
IH
IL
(Notes 2, 3) ..............................................................7.4NC/W
B
JC
Operating Case Temperature
Range (Note 4) ................................................. -40NC to +85NC
Junction Temperature .....................................................+150NC
Storage Temperature Range ............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
4.75 5 5.25 V
2 V
0.8 V
-10 +10
FA
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 3.0V to 3.6V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.43kI.
Typical values are at V
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage V
Supply Current I
LOSEL Input High Voltage V
LOSEL Input Low Voltage V
= 3.3V, TC = +25NC, unless otherwise noted.)
CC
CC
CC
Total supply current 264 mA
IH
IL
3.0 3.3 3.6 V
2 V
0.8 V
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
RF Frequency f
LO Frequency f
2
RF
LO
C1 = C8 = 39pF (Note 5) 1200 1700
C1 = C8 = 1.8pF, L7 = L8 = 4.7nH (Note 5) 1700 2000
(Note 5) 1450 2050 MHz
MHz
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO
Buffer/Switch
RECOMMENDED AC OPERATING CONDITIONS (continued)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Using Mini-Circuits TC4-1W-17 4:1 trans-
IF Frequency f
LO Drive Level P
IF
LO
former as defined in the Typical Application
Circuit, IF matching components affect the
IF frequency range (Note 5)
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer as defined in the Typical
Application Circuit, IF matching components
affect the IF frequency range (Note 5)
(Note 5) -6 +3 dBm
100 500
MHz
50 250
5.0V SUPPLY, HIGH-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V
to 5.25V, RF and LO ports are driven from 50I sources, P
f
= 1550MHz to 2050MHz, fIF = 350MHz, fRF < fLO, TC = -40NC to +85NC. Typical values are at V
LO
PLO = 0dBm, f
characterization, unless otherwise noted.) (Note 6)
Conversion Gain G
Conversion Gain Flatness DG
Gain Variation Over Temperature TC
Input Compression Point IP
Input Third-Order Intercept Point IIP3
Input Third-Order Intercept Point
Variation Over Temperature
Noise Figure (Note 9) NF
Noise Figure Temperature
Coefficient
Noise Figure with Blocker NF
= 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC. All parameters are guaranteed by design and
RF
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
T
= +25NC (Note 7) 7.0 8.4 9.0
C
CG
1dBfRF
TC
IIP3
SSB
TC
NF
C
T
= +25NC, fRF = 1427MHz to 1463MHz
C
(Note 7)
fRF = 1427MHz to 1463MHz Q0.05 dB
C
TC = -40NC to +85NC -0.01 dB/NC
= 1450MHz (Notes 7, 8) 12.6 14.0 dBm
f
RF1
f
RF1
f
= 1427MHz to 1463MHz, TC = +25NC
RF
(Note 7)
f
RF1
f
= 1427MHz to 1463MHz
RF
f
RF1
T
= -40NC to +85NC
C
Single sideband, no blockers present 9.8 13
f
= 1427MHz to 1463MHz, TC = +25NC,
RF
P
LO
present
f
= 1427MHz to 1463MHz, PLO = 0dBm,
RF
single sideband, no blockers present
Single sideband, no blockers present,
T
= -40NC to +85NC
C
P
BLOCKER
f
LO
B
P
LO
(Notes 9, 10)
= -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz,
LO
= 5.0V, PRF = -5dBm,
CC
6.2 8.4 9.8
7.9 8.4 8.9
- f
= 1MHz, PRF = -5dBm per tone 21.5 25.0
RF2
- f
= 1MHz, PRF = -5dBm per tone,
RF2
23.0 25.0
- f
= 1MHz, PRF = -5dBm per tone,
RF2
- f
= 1MHz, PRF = -5dBm per tone,
RF2
= 0dBm, single sideband, no blockers
= +8dBm, fRF = 1450MHz,
= 1800MHz, f
= 0dBm, VCC = 5.0V, TC = +25NC
BLOCKER
= 1350MHz,
22 25.0
Q0.75 dBm
9.8 11
9.8 12.5
0.016 dB/NC
20.2 22 dB
dB
dBm
dB
MAX19994A
3
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
5.0V SUPPLY, HIGH-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V
to 5.25V, RF and LO ports are driven from 50I sources, P
f
= 1550MHz to 2050MHz, fIF = 350MHz, fRF < fLO, TC = -40NC to +85NC. Typical values are at V
LO
PLO = 0dBm, f
characterization, unless otherwise noted.) (Note 6)
MAX19994A
2LO - 2RF Spur Rejection (Note 9) 2 x 2
3LO - 3RF Spur Rejection (Note 9) 3 x 3
RF Input Return Loss
LO Input Return Loss
IF Output Impedance Z
IF Output Return Loss
RF-to-IF Isolation (Note 7) 19 30 dB
LO Leakage at RF Port (Note 7) -42 dBm
2LO Leakage at RF Port (Note 7) -30 dBm
LO Leakage at IF Port (Note 7) -35 dBm
Channel Isolation (Note 7)
LO-to-LO Isolation
LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns
= 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC. All parameters are guaranteed by design and
RF
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
= 1450MHz,
f
RF
f
LO
f
SPUR
f
= 1450MHz,
RF
f
LO
f
SPUR
P
LO
T
= +25NC
C
= 1450MHz,
f
RF
f
LO
f
SPUR
f
= 1450MHz,
RF
f
LO
f
SPUR
P
LO
T
= +25NC
C
LO and IF terminated into matched
impedance, LO “on”
LO port selected, RF and IF terminated into
matched impedance
LO port unselected, RF and IF terminated
into matched impedance
Nominal differential impedance of the IF
IF
outputs
RF terminated into 50I, LO driven by
50I source, IF transformed to 50I using
external components shown in the Typical
Application Circuit
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50I
RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50I
P
LO1
f
LO1
= -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz,
LO
= 5.0V, PRF = -5dBm,
CC
P
= -10dBm 57 68
= 1800MHz,
= 1625MHz
= 1800MHz,
= 1625MHz,
= 0dBm, VCC = 5.0V,
= 1800MHz,
= 1683.33MHz
= 1800MHz,
= 1683.33MHz,
= 0dBm, VCC = 5.0V,
= +3dBm, P
= 1800MHz, f
= +3dBm,
LO2
LO2
= 1801MHz (Note 7)
RF
= -5dBm 52 63
P
RF
P
= -10dBm 58 68
RF
= -5dBm 53 63
P
RF
P
= -10dBm 68 84
RF
= -5dBm 58 74
P
RF
P
= -10dBm 70 84
RF
= -5dBm 60 74
P
RF
43 47
43 47
42 48 dB
17 dB
16
20
200
13.0 dB
dBc
dBc
dB
I
dB
4
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO
Buffer/Switch
3.3V SUPPLY, HIGH-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical
values are at V
noted.) (Note 6)
Conversion Gain G
Conversion Gain Flatness DG
Gain Variation Over Temperature TC
Input Compression Point IP
Input Third-Order Intercept Point IIP3 f
Input Third-Order Intercept Point
Variation Over Temperature
Noise Figure NF
Noise Figure Temperature Coefficient TC
2LO - 2RF Spur Rejection 2 x 2
3LO - 3RF Spur Rejection 3 x 3
RF Input Return Loss
LO Input Return Loss
IF Output Return Loss
RF-to-IF Isolation 31 dB
LO Leakage at RF Port -49 dBm
2LO Leakage at RF Port -40 dBm
LO Leakage at IF Port -35 dBm
Channel Isolation
LO-to-LO Isolation
LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns
= 3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC, unless otherwise
CC
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
(Note 7) 8.2 dB
C
fRF = 1427MHz to 1463MHz ±0.05 dB
C
TC = -40NC to +85NC -0.01 dB/NC
CG
1dB
TC
(Note 8) 10.6 dBm
- f
RF1
f
IIP3
SSB
RF1
T
C
Single sideband, no blockers present 9.8 dB
Single sideband, no blockers present,
NF
T
C
P
RF
P
RF
P
RF
P
RF
LO and IF terminated into matched
impedance, LO “on”
LO port selected, RF and IF terminated into
matched impedance
LO port unselected, RF and IF terminated
into matched impedance
RF terminated into 50I, LO driven by
50I source, IF transformed to 50I using
external components shown in the Typical
Application Circuit
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50I
RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50I
P
LO1
f
LO1
= 1MHz 23.6 dBm
RF2
- f
= 1MHz, PRF = -5dBm per tone,
RF2
= -40NC to +85NC
= -40NC to +85NC
= -10dBm 68
= -5dBm 63
= -10dBm 77
= -5dBm 67
= +3dBm, P
= 1800MHz, f
= +3dBm,
LO2
= 1801MHz
LO2
±0.5 dBm
0.016 dB/NC
15 dB
18
21
12.5 dB
48
48
50 dB
dBc
dBc
dB
dB
MAX19994A
5
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
5.0V SUPPLY, LOW-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the Extended RF Band (see Table 1), R1 = R4 = 681I, R2 = R5 = 1.82kI. Typical
values are at V
noted.) (Note 6)
Conversion Gain G
Conversion Gain Flatness DG
Gain Variation Over Temperature TC
Input Compression Point IP
MAX19994A
Input Third-Order Intercept Point IIP3 f
Input Third-Order Intercept Point
Variation Over Temperature
Noise Figure NF
Noise Figure Temperature Coefficient TC
2RF - 2LO Spur Rejection 2 x 2
3RF - 3LO Spur Rejection 3 x 3
RF Input Return Loss
LO Input Return Loss
IF Output Return Loss
RF-to-IF Isolation 37 dB
LO Leakage at RF Port -52 dBm
2LO Leakage at RF Port -29 dBm
LO Leakage at IF Port -19.4 dBm
Channel Isolation
LO-to-LO Isolation
LO Switching Time 50% of LOSEL to IF settled within 2 degrees 50 ns
Note 5: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters.
See the Typical Operating Characteristics.
= 5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1850MHz, fLO = 1500MHz, fIF = 350MHz, TC = +25NC, unless otherwise
CC
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
7.9 dB
Q0.06 dB
Q0.6 dBm
0.017 dB/NC
14 dB
29
28
14.5 dB
43
43
54 dB
TC
C
CG
1dB
IIP3
SSB
NF
fRF = 1700MHz to 2000MHz, over any
C
100MHz band
TC = -40NC to +85NC -0.007 dB/NC
(Note 8) 13.9 dBm
- f
RF1
f
RF1
T
C
Single sideband, no blockers present 10.2 dB
Single sideband, no blockers present,
T
C
P
RF
P
RF
P
RF
P
RF
LO and IF terminated into matched
impedance, LO “on”
LO port selected, RF and IF terminated into
matched impedance
LO port unselected, RF and IF terminated
into matched impedance
RF terminated into 50I, LO driven by
50I source, IF transformed to 50I using
external components shown in the Typical
Application Circuit
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50I
RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50I
P
LO1
f
LO1
= 1MHz 24.9 dBm
RF2
- f
= 1MHz, PRF = -5dBm per tone,
RF2
= -40NC to +85NC
= -40NC to +85NC
= -10dBm 68
= -5dBm 63
= -10dBm 87
= -5dBm 77
= +3dBm, P
= 1500MHz, f
= +3dBm,
LO2
= 1501MHz
LO2
dBc
dBc
dB
dB
6
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO
Buffer/Switch
Note 6: All limits reflect losses of external components, including a 0.8dB loss at fIF = 350MHz due to the 4:1 transformer. Output
measurements were taken at IF outputs of the Typical Application Circuit.
Note 7: 100% production tested for functionality.
Note 8: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50I source.
Note 9: Not production tested.
Note 10: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects
of all SNR degradations in the mixer, including the LO noise, as defined in Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
Typical Operating Characteristics
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P
CONVERSION GAIN vs. RF FREQUENCY
10
9
8
TC = +85°C
CONVERSION GAIN (dB)
7
TC = -40°C
TC = +25°C
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
CONVERSION GAIN vs. RF FREQUENCY
10
MAX19994A toc01
9
8
CONVERSION GAIN (dB)
7
PLO = -6dBm, -3dBm, 0dBm, +3dBm
10
MAX19994A toc02
9
8
CONVERSION GAIN (dB)
7
CONVERSION GAIN vs. RF FREQUENCY
VCC = 4.75V, 5.0V, 5.25V
MAX19994A
MAX19994A toc03
6
1200 1700
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
27
TC = +85°C
26
25
24
INPUT IP3 (dBm)
TC = +25°C
23
22
1200 1700
RF FREQUENCY (MHz)
= -5dBm/TONE
P
RF
TC = -40°C
1600150014001300
6
1200 1700
RF FREQUENCY (MHz)
1600150014001300
INPUT IP3 vs. RF FREQUENCY
27
PLO = +3dBm
26
MAX19994A toc04
25
24
INPUT IP3 (dBm)
23
1600150014001300
22
1200 1700
PLO = -3dBm
RF FREQUENCY (MHz)
PLO = 0dBm
P
= -5dBm/TONE
RF
PLO = -6dBm
1600150014001300
MAX19994A toc05
6
1200 1700
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
27
26
25
24
INPUT IP3 (dBm)
23
22
1200 1700
VCC = 5.25V
VCC = 5.0V
RF FREQUENCY (MHz)
P
= -5dBm/TONE
RF
VCC = 4.75V
1600150014001300
MAX19994A toc06
1600150014001300
7
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
NOISE FIGURE vs. RF FREQUENCY
12
TC = +85°C
11
10
MAX19994A
9
NOISE FIGURE (dB)
8
7
6
TC = -40°C
1200 1700
RF FREQUENCY (MHz)
2LO - 2RF RESPONSE vs. RF FREQUENCY
80
70
60
2LO - 2RF RESPONSE (dBc)
50
1200 1700
TC = +85°C
TC = -40°C
RF FREQUENCY (MHz)
TC = +25°C
1600150014001300
PRF = -5dBm
TC = +25°C
1600150014001300
12
11
MAX19994A toc07
10
9
NOISE FIGURE (dB)
8
7
6
1200 1700
2LO - 2RF RESPONSE vs. RF FREQUENCY
80
MAX19994A toc10
70
60
2LO - 2RF RESPONSE (dBc)
50
1200 1700
NOISE FIGURE vs. RF FREQUENCY
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1600150014001300
RF FREQUENCY (MHz)
PRF = -5dBm
PLO = +3dBm
PLO = -3dBm
PLO = -6dBm
RF FREQUENCY (MHz)
PLO = 0dBm
1600150014001300
12
11
MAX19994A toc08
10
9
NOISE FIGURE (dB)
8
7
6
1200 1700
2LO - 2RF RESPONSE vs. RF FREQUENCY
80
MAX19994A toc11
70
60
2LO - 2RF RESPONSE (dBc)
50
1200 1700
NOISE FIGURE vs. RF FREQUENCY
MAX19994A toc09
VCC = 4.75V, 5.0V, 5.25V
1600150014001300
RF FREQUENCY (MHz)
PRF = -5dBm
MAX19994A toc12
VCC = 4.75V, 5.0V, 5.25V
1600150014001300
RF FREQUENCY (MHz)
3LO - 3RF RESPONSE vs. RF FREQUENCY
95
85
75
3LO - 3RF RESPONSE (dBc)
65
55
TC = +85°C
TC = -40°C
1200 1700
RF FREQUENCY (MHz)
8
= -5dBm
P
RF
TC = +25°C
1600150014001300
3LO - 3RF RESPONSE vs. RF FREQUENCY
95
MAX19994A toc13
85
75
3LO - 3RF RESPONSE (dBc)
65
55
1200 1700
PLO = -6dBm
PLO = -3dBm, 0dBm, +3dBm
RF FREQUENCY (MHz)
P
RF
= -5dBm
1600150014001300
3LO - 3RF RESPONSE vs. RF FREQUENCY
95
MAX19994A toc14
85
75
3LO - 3RF RESPONSE (dBc)
65
55
1200 1700
VCC = 4.75V
VCC = 5.0V
RF FREQUENCY (MHz)
= -5dBm
P
RF
VCC = 5.25V
1600150014001300
MAX19994A toc15
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
MAX19994A
INPUT P
16
15
14
(dBm)
1dB
13
INPUT P
TC = -40°C
12
11
1200 1700
vs. RF FREQUENCY
1dB
TC = +85°C
TC = +25°C
RF FREQUENCY (MHz)
CHANNEL ISOLATION vs. RF FREQUENCY
60
55
50
45
40
CHANNEL ISOLATION (dB)
35
TC = -40°C, +25°C, +85°C
INPUT P
16
15
MAX19994A toc16
14
(dBm)
1dB
13
INPUT P
12
1600150014001300
11
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1200 1700
vs. RF FREQUENCY
1dB
RF FREQUENCY (MHz)
MAX19994A toc17
(dBm)
1dB
INPUT P
1600150014001300
CHANNEL ISOLATION vs. RF FREQUENCY
60
55
MAX19994A toc19
50
45
40
CHANNEL ISOLATION (dB)
35
PLO = -6dBm, -3dBm, 0dBm, +3dBm
MAX19994A toc20
CHANNEL ISOLATION (dB)
INPUT P
16
15
VCC = 5.0V
14
13
12
11
1200 1700
CHANNEL ISOLATION vs. RF FREQUENCY
60
55
50
45
40
35
vs. RF FREQUENCY
1dB
VCC = 5.25V
VCC = 4.75V
RF FREQUENCY (MHz)
VCC = 4.75V, 5.0V, 5.25V
MAX19994A toc18
1600150014001300
MAX19994A toc21
30
1200 1700
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-20
-25
-30
-35
-40
LO LEAKAGE AT IF PORT (dBm)
-45
-50
TC = +25°C
1550 2050
LO FREQUENCY (MHz)
TC = +85°C
TC = -40°C
1600150014001300
30
1200 1700
RF FREQUENCY (MHz)
1600150014001300
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-20
-25
MAX19994A toc22
-30
-35
-40
LO LEAKAGE AT IF PORT (dBm)
-45
1950185017501650
-50
PLO = +3dBm
PLO = 0dBm
PLO = -3dBm
PLO = -6dBm
1550 2050
LO FREQUENCY (MHz)
1950185017501650
30
1200 1700
-20
-25
MAX19994A toc23
-30
-35
-40
LO LEAKAGE AT IF PORT (dBm)
-45
-50
1550 2050
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
VCC = 5.25V
VCC = 4.75V
LO FREQUENCY (MHz)
VCC = 5.0V
1600150014001300
MAX19994A toc24
1950185017501650
9
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
TC = +85°C
40
MAX19994A
30
RF-TO-IF ISOLATION (dB)
20
1200 1700
RF FREQUENCY (MHz)
TC = +25°C
TC = -40°C
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
TC = -40°C
TC = +85°C
1600150014001300
TC = +25°C
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
MAX19994A toc25
40
30
RF-TO-IF ISOLATION (dB)
20
1200 1700
-20
-30
MAX19994A toc28
LO LEAKAGE AT RF PORT (dBm)
PLO = +3dBm
-40
-50
-60
PLO = +3dBm
PLO = 0dBm
PLO = -3dBm
PLO = -6dBm
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
PLO = 0dBm
PLO = -3dBm
PLO = -6dBm
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
VCC = 5.25V
MAX19994A toc26
40
VCC = 4.75V
30
RF-TO-IF ISOLATION (dB)
1600150014001300
20
1200 1700
VCC = 5.0V
1600150014001300
RF FREQUENCY (MHz)
MAX19994A toc27
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
MAX19994A toc29
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
VCC = 4.75V, 5.0V, 5.25V
MAX19994A toc30
-70
1400 2200
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
2LO LEAKAGE AT RF PORT (dBm)
-50
-60
1400 2200
TC = +25°C
TC = +85°C
LO FREQUENCY (MHz)
TC = -40°C
10
-70
200018001600
1400 2200
LO FREQUENCY (MHz)
200018001600
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
MAX19994A toc31
-30
-40
2LO LEAKAGE AT RF PORT (dBm)
-50
-60
200018001600
1400 2200
PLO = 0dBm
LO FREQUENCY (MHz)
PLO = +3dBm
-20
PLO = -3dBm
PLO = -6dBm
200018001600
-70
1400 2200
-10
-20
MAX19994A toc32
-30
VCC = 5.0V
-40
2LO LEAKAGE AT RF PORT (dBm)
-50
-60
1400 2200
200018001600
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
VCC = 5.25V
VCC = 4.75V
200018001600
LO FREQUENCY (MHz)
MAX19994A toc33
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
MAX19994A
LO SWITCH ISOLATION
vs. LO FREQUENCY
65
TC = -40°C
55
45
LO SWITCH ISOLATION (dB)
35
1400 2200
TC = +25°C
TC = +85°C
200018001600
LO FREQUENCY (MHz)
RF PORT RETURN LOSS
vs. RF FREQUENCY
0
5
10
PLO = -6dBm, -3dBm, 0dBm, +3dBm
15
20
RF PORT RETURN LOSS (dB)
25
30
1200 1700
RF FREQUENCY (MHz)
IF = 350MHz
LO UNSELECTED PORT RETURN LOSS
vs. LO FREQUENCY
0
LO SWITCH ISOLATION
vs. LO FREQUENCY
65
MAX19994A toc34
55
45
LO SWITCH ISOLATION (dB)
35
1400 2200
PLO = -6dBm, -3dBm, 0dBm, +3dBm
200018001600
LO FREQUENCY (MHz)
65
MAX19994A toc35
55
45
LO SWITCH ISOLATION (dB)
35
1400 2200
IF PORT RETURN LOSS vs. IF FREQUENCY
0
5
MAX19994A toc37
10
15
20
IF PORT RETURN LOSS (dB)
25
30
1600150014001300
50 500
VCC = 4.75V, 5.0V, 5.25V
MAX19994A toc38
LO = 1550MHz
LO = 1800MHz
LO = 2050MHz
410320230140
IF FREQUENCY (MHz)
0
10
20
30
LO SELECTED PORT RETURN LOSS (dB)
40
1400 2200
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19994A toc36
VCC = 4.75V, 5.0V, 5.25V
200018001600
LO FREQUENCY (MHz)
LO SELECTED PORT RETURN LOSS
vs. LO FREQUENCY
MAX19994A toc39
PLO = +3dBm
PLO = 0dBm
PLO = -3dBm
PLO = -6dBm
200018001600
LO FREQUENCY (MHz)
SUPPLY CURRENT vs.TEMPERATURE (TC)
360
10
20
30
LO UNSELECTED PORT RETURN LOSS (dB)
40
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1400 2200
LO FREQUENCY (MHz)
200018001600
MAX19994A toc40
350
VCC = 5.25V
340
330
320
SUPPLY CURRENT (mA)
310
300
-40 85
TEMPERATURE (°C)
VCC = 4.75VVCC = 5.0V
MAX19994A toc41
603510-15
11
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
CONVERSION GAIN vs. RF FREQUENCY
10
TC = -40°C
9
MAX19994A
8
CONVERSION GAIN (dB)
7
TC = +85°C
6
1200 1700
TC = +25°C
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
26
25
24
23
INPUT IP3 (dBm)
22
21
TC = +85°C
PRF = -5dBm/TONE
TC = +25°C
TC = -40°C
VCC = 3.3V
1600150014001300
VCC = 3.3V
10
MAX19994A toc42
MAX19994A toc45
9
8
CONVERSION GAIN (dB)
7
6
26
25
24
23
INPUT IP3 (dBm)
22
21
CONVERSION GAIN vs. RF FREQUENCY
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1200 1700
RF FREQUENCY (MHz)
1600150014001300
INPUT IP3 vs. RF FREQUENCY
VCC = 3.3V
PLO = +3dBm
PRF = -5dBm/TONE
PLO = 0dBm
PLO = -3dBm
PLO = -6dBm
10
MAX19994A toc43
MAX19994A toc46
9
8
CONVERSION GAIN (dB)
7
6
26
25
24
23
INPUT IP3 (dBm)
22
21
CONVERSION GAIN vs. RF FREQUENCY
VCC = 3.6V
VCC = 3.3V
VCC = 3.0V
1200 1700
RF FREQUENCY (MHz)
1600150014001300
INPUT IP3 vs. RF FREQUENCY
VCC = 3.6V
VCC = 3.0V
PRF = -5dBm/TONE
VCC = 3.3V
MAX19994A toc44
MAX19994A toc47
20
1200 1700
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
NOISE FIGURE (dB)
9
8
7
TC = +85°C
TC = +25°C
TC = -40°C
1200 1700
RF FREQUENCY (MHz)
12
1600150014001300
VCC = 3.3V
1600150014001300
MAX19994A toc48
NOISE FIGURE (dB)
20
1200 1700
RF FREQUENCY (MHz)
1600150014001300
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
9
PLO = -6dBm, -3dBm, 0dBm, +3dBm
8
7
1200 1700
RF FREQUENCY (MHz)
VCC = 3.3V
1600150014001300
MAX19994A toc49
NOISE FIGURE (dB)
20
1200 1700
RF FREQUENCY (MHz)
1600150014001300
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
9
8
7
1200 1700
VCC = 3.0V, 3.3V, 3.6V
1600150014001300
RF FREQUENCY (MHz)
MAX19994A toc50
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
MAX19994A
2LO - 2RF RESPONSE vs. RF FREQUENCY
80
70
60
2LO - 2RF RESPONSE (dBc)
50
1200 1700
TC = +85°C
TC = -40°C
RF FREQUENCY (MHz)
VCC = 3.3V
PRF = -5dBm
TC = +25°C
3LO - 3RF RESPONSE vs. RF FREQUENCY
85
75
65
3LO - 3RF RESPONSE (dBc)
55
TC = +85°C
TC = -40°C
TC = +25°C
VCC = 3.3V
P
RF
1600150014001300
= -5dBm
2LO - 2RF RESPONSE vs. RF FREQUENCY
80
MAX19994A toc51
70
60
2LO - 2RF RESPONSE (dBc)
50
1200 1700
3LO - 3RF RESPONSE vs. RF FREQUENCY
85
MAX19994A toc54
75
65
3LO - 3RF RESPONSE (dBc)
55
VCC = 3.3V
PRF = -5dBm
PLO = +3dBm
PLO = 0dBm
PLO = -6dBm
RF FREQUENCY (MHz)
PLO = -6dBm, -3dBm, 0dBm, +3dBm
PLO = -3dBm
1600150014001300
VCC = 3.3V
P
= -5dBm
RF
2LO - 2RF RESPONSE vs. RF FREQUENCY
80
MAX19994A toc52
70
60
2LO - 2RF RESPONSE (dBc)
50
1200 1700
3LO - 3RF RESPONSE vs. RF FREQUENCY
85
MAX19994A toc55
75
65
3LO - 3RF RESPONSE (dBc)
55
VCC = 3.6V
VCC = 3.3V
RF FREQUENCY (MHz)
VCC = 3.0V
VCC = 3.0V
VCC = 3.6V
VCC = 3.3V
PRF = -5dBm
MAX19994A toc53
1600150014001300
PRF = -5dBm
MAX19994A toc56
45
1200 1700
RF FREQUENCY (MHz)
INPUT P
13
12
11
(dBm)
1dB
10
INPUT P
9
8
1200 1700
vs. RF FREQUENCY
1dB
TC = +85°C
TC = +25°C
TC = -40°C
RF FREQUENCY (MHz)
VCC = 3.3V
MAX19994A toc57
45
1200 1700
RF FREQUENCY (MHz)
INPUT P
13
12
11
(dBm)
1dB
10
INPUT P
9
8
1200 1700
vs. RF FREQUENCY
1dB
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
RF FREQUENCY (MHz)
1600150014001300
1600150014001300
1600150014001300
1600150014001300
MAX19994A toc58
(dBm)
INPUT P
45
1200 1700
RF FREQUENCY (MHz)
INPUT P
13
12
11
1dB
10
9
VCC = 3.0V
8
1200 1700
vs. RF FREQUENCY
1dB
VCC = 3.6V
VCC = 3.3V
RF FREQUENCY (MHz)
1600150014001300
MAX19994A toc59
1600150014001300
13
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
CHANNEL ISOLATION vs. RF FREQUENCY
60
55
50
MAX19994A
45
40
CHANNEL ISOLATION (dB)
35
30
1200 1700
TC = -40°C, +25°C, +85°C
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-20
-25
-30
-35
-40
LO LEAKAGE AT IF PORT (dBm)
-45
TC = +25°C
VCC = 3.3V
1600150014001300
VCC = 3.3V
TC = +85°C
TC = -40°C
60
55
MAX19994A toc60
50
45
40
CHANNEL ISOLATION (dB)
35
30
1200 1700
-20
-25
MAX19994A toc63
-30
-35
-40
LO LEAKAGE AT IF PORT (dBm)
-45
CHANNEL ISOLATION
vs. RF FREQUENCY
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1600150014001300
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
VCC = 3.3V
PLO = +3dBm
PLO = 0dBm
PLO = -6dBm
PLO = -3dBm
60
55
MAX19994A toc61
50
45
40
CHANNEL ISOLATION (dB)
35
30
1200 1700
-20
-25
MAX19994A toc64
-30
-35
-40
LO LEAKAGE AT IF PORT (dBm)
-45
CHANNEL ISOLATION
vs. RF FREQUENCY
MAX19994A toc62
VCC = 3.0V, 3.3V, 3.6V
1600150014001300
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
MAX19994A toc65
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
-50
1550 2050
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
50
TC = +85°C
40
TC = +25°C
30
RF-TO-IF ISOLATION (dB)
20
TC = -40°C
RF FREQUENCY (MHz)
14
1950185017501650
VCC = 3.3V
16001500140013001200 1700
-50
1550 2050
50
MAX19994A toc66
40
30
RF-TO-IF ISOLATION (dB)
20
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
PLO = +3dBm
PLO = -3dBm
RF FREQUENCY (MHz)
PLO = 0dBm
PLO = -6dBm
1950185017501650
VCC = 3.3V
16001500140013001200 1700
-50
1550 2050
50
MAX19994A toc67
40
30
RF-TO-IF ISOLATION (dB)
20
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
VCC = 3.3V
VCC = 3.0V
VCC = 3.6V
RF FREQUENCY (MHz)
1950185017501650
MAX19994A toc68
16001500140013001200 1700
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
MAX19994A
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
TC = -40°C
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
-70
1400 2200
TC = +25°C
TC = +85°C
LO FREQUENCY (MHz)
VCC = 3.3V
200018001600
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
2LO LEAKAGE AT RF PORT (dBm)
-50
TC = -40°C
TC = +85°C
TC = +25°C
VCC = 3.3V
-20
-30
MAX19994A toc69
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
-70
1400 2200
-10
-20
MAX19994A toc72
PLO = +3dBm
-30
-40
PLO = -6dBm
2LO LEAKAGE AT RF PORT (dBm)
-50
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
VCC = 3.3V
PLO = +3dBm
PLO = 0dBm
PLO = -3dBm
PLO = -6dBm
200018001600
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
PLO = 0dBm
PLO = -3dBm
VCC = 3.3V
-20
-30
MAX19994A toc70
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
-70
1400 2200
-10
-20
MAX19994A toc73
-30
-40
2LO LEAKAGE AT RF PORT (dBm)
-50
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
VCC = 3.6V
VCC = 3.3V
VCC = 3.0V
200018001600
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
VCC = 3.6V
VCC = 3.0V
VCC = 3.3V
MAX19994A toc71
MAX19994A toc74
-60
1400 2200
LO FREQUENCY (MHz)
200018001600
LO SWITCH ISOLATION
vs. LO FREQUENCY
65
TC = -40°C
55
45
LO SWITCH ISOLATION (dB)
35
LO FREQUENCY (MHz)
TC = +25°C
VCC = 3.3V
TC = +85°C
2000180016001400 2200
-60
1400 2200
65
MAX19994A toc75
55
45
LO SWITCH ISOLATION (dB)
35
200018001600
LO FREQUENCY (MHz)
LO SWITCH ISOLATION
vs. LO FREQUENCY
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
2000180016001400 2200
LO FREQUENCY (MHz)
-60
1400 2200
65
MAX19994A toc76
55
45
LO SWITCH ISOLATION (dB)
35
200018001600
LO FREQUENCY (MHz)
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19994A toc77
VCC = 3.0V, 3.3V, 3.6V
2000180016001400 2200
LO FREQUENCY (MHz)
15
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
RF PORT RETURN LOSS
vs. RF FREQUENCY
0
5
MAX19994A
10
15
20
RF PORT RETURN LOSS (dB)
PLO = -6dBm, -3dBm, 0dBm, +3dBm
25
30
1200 1700
RF FREQUENCY (MHz)
LO UNSELECTED PORT RETURN LOSS
0
10
20
30
LO UNSELECTED PORT RETURN LOSS (dB)
40
1400 2200
VCC = 3.3V
IF = 350MHz
MAX19994A toc78
1600150014001300
0
5
10
15
20
IF PORT RETURN LOSS (dB)
25
30
vs. LO FREQUENCY
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
200018001600
LO FREQUENCY (MHz)
IF PORT RETURN LOSS
vs. IF FREQUENCY
VCC = 3.3V
LO = 2050MHz
LO = 1800MHz
LO = 1550MHz
50 500
IF FREQUENCY (MHz)
MAX19994A toc81
410320230140
300
280
260
SUPPLY CURRENT (mA)
240
220
-40 85
LO SELECTED PORT RETURN LOSS
0
MAX19994A toc79
10
PLO = +3dBm
20
PLO = 0dBm
30
LO SELECTED PORT RETURN LOSS (dB)
40
SUPPLY CURRENT
vs. TEMPERATURE (T
VCC = 3.6V
VCC = 3.3V
VCC = 3.0V
TEMPERATURE (°C)
vs. LO FREQUENCY
PLO = -3dBm
PLO = -6dBm
LO FREQUENCY (MHz)
)
C
MAX19994A toc82
603510-15
VCC = 3.3V
MAX19994A toc80
2000180016001400 2200
16
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is
low-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
MAX19994A
CONVERSION GAIN vs. RF FREQUENCY
10
9
8
CONVERSION GAIN (dB)
7
6
1700 2000
TC = -40°C
TC = +85°C
RF FREQUENCY (MHz)
TC = +25°C
19001800
INPUT IP3 vs. RF FREQUENCY
28
TC = +85°C
26
24
INPUT IP3 (dBm)
22
TC = +25°C
PRF = -5dBm/TONE
TC = -40°C
10
MAX19994A toc83
MAX19994A toc86
9
8
CONVERSION GAIN (dB)
7
6
28
26
24
INPUT IP3 (dBm)
22
CONVERSION GAIN vs. RF FREQUENCY
PLO = -3dBm, 0dBm, +3dBm
1700 2000
RF FREQUENCY (MHz)
19001800
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE
PLO = -3dBm, 0dBm, +3dBm
10
MAX19994A toc84
MAX19994A toc87
9
8
CONVERSION GAIN (dB)
7
6
28
26
24
INPUT IP3 (dBm)
22
CONVERSION GAIN vs. RF FREQUENCY
VCC = 4.75V, 5.0V, 5.25V
1700 2000
RF FREQUENCY (MHz)
19001800
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE
VCC = 5.25V
VCC = 5.0V
VCC = 4.75V
MAX19994A toc85
MAX19994A toc88
20
1700 2000
RF FREQUENCY (MHz)
19001800
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
NOISE FIGURE (dB)
9
TC = +25°C
8
7
1700 2000
TC = +85°C
TC = -40°C
19001800
RF FREQUENCY (MHz)
MAX19994A toc89
NOISE FIGURE (dB)
20
1700 2000
RF FREQUENCY (MHz)
19001800
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
9
8
7
1700 2000
PLO = -3dBm, 0dBm, +3dBm
19001800
RF FREQUENCY (MHz)
MAX19994A toc90
NOISE FIGURE (dB)
20
1700 2000
RF FREQUENCY (MHz)
19001800
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
9
8
7
1700 2000
VCC = 4.75V, 5.0V, 5.25V
19001800
RF FREQUENCY (MHz)
MAX19994A toc91
17
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is
low-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
80
70
MAX19994A
60
2RF - 2LO RESPONSE (dBc)
50
1700 2000
= +85°C
T
C
= +25°C
T
C
1800 1900
RF FREQUENCY (MHz)
3RF - 3LO RESPONSE vs. RF FREQUENCY
95
85
75
3RF - 3LO RESPONSE (dBc)
65
= +25°C
T
C
55
1700 2000
TC = +85°C
RF FREQUENCY (MHz)
19001800
= -5dBm
P
RF
= -40°C
T
C
PRF = -5dBm
T
= -40°C
C
2RF - 2LO RESPONSE vs. RF FREQUENCY2RF - 2LO RESPONSE vs. RF FREQUENCY
80
MAX19994A toc92
70
60
2RF - 2LO RESPONSE (dBc)
50
1700 2000
3RF - 3LO RESPONSE vs. RF FREQUENCY
95
MAX19994A toc95
85
75
3RF - 3LO RESPONSE (dBc)
65
55
1700 2000
= +3dBm
P
LO
1800 1900
RF FREQUENCY (MHz)
PLO = -3dBm, 0dBm, +3dBm
RF FREQUENCY (MHz)
P
LO
P
LO
= 0dBm
= -3dBm
19001800
= -5dBm
P
RF
PRF = -5dBm
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
MAX19994A toc93
70
60
2RF - 2LO RESPONSE (dBc)
50
1700 2000
3RF - 3LO RESPONSE vs. RF FREQUENCY
95
MAX19994A toc96
85
75
3RF - 3LO RESPONSE (dBc)
65
55
1700 2000
VCC = 4.75V, 5.0V, 5.25V
V
= 5.25V
CC
= 4.75V
V
CC
1800 1900
RF FREQUENCY (MHz)
VCC = 5.0V
19001800
RF FREQUENCY (MHz)
= -5dBm
P
RF
PRF = -5dBm
MAX19994A toc94
MAX19994A toc97
INPUT P
16
15
14
(dBm)
1dB
13
INPUT P
T
= -40°C
C
12
11
1700 2000
vs. RF FREQUENCY
1dB
TC = +85°C
RF FREQUENCY (MHz)
18
19001800
TC = +25°C
MAX19994A toc98
INPUT P
16
15
14
(dBm)
1dB
13
INPUT P
12
11
1700 2000
vs. RF FREQUENCY
1dB
PLO = -3dBm, 0dBm, +3dBm
19001800
RF FREQUENCY (MHz)
MAX19994A toc99
(dBm)
INPUT P
INPUT P
16
15
VCC = 5.0V
14
1dB
13
12
11
1700 2000
vs. RF FREQUENCY
1dB
VCC = 5.25V
VCC = 4.75V
19001800
RF FREQUENCY (MHz)
MAX19994A toc100
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is
low-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
MAX19994A
CHANNEL ISOLATION
vs. RF FREQUENCY
50
45
TC = -40°C, +25°C, +85°C
40
CHANNEL ISOLATION (dB)
35
1700 2000
1800 1900
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-10
-15
-20
-25
-30
LO LEAKAGE AT IF PORT (dBm)
-35
TC = +85°C
TC = -40°C
TC = +25°C
50
MAX19994A toc101
45
40
CHANNEL ISOLATION (dB)
35
1700 2000
-10
-15
MAX19994A toc104
-20
-25
-30
LO LEAKAGE AT IF PORT (dBm)
-35
CHANNEL ISOLATION
vs. RF FREQUENCY
PLO = -3dBm, 0dBm, +3dBm
1800 1900
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
PLO = 0dBm
PLO = -3dBm
PLO = +3dBm
50
MAX19994A toc102
45
40
CHANNEL ISOLATION (dB)
35
1700 2000
-10
-15
MAX19994A toc105
-20
-25
-30
LO LEAKAGE AT IF PORT (dBm)
-35
CHANNEL ISOLATION
vs. RF FREQUENCY
MAX19994A toc103
VCC = 4.75V, 5.0V, 5.25V
1800 1900
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
VCC = 5.25V
MAX19994A toc106
VCC = 5.0V
VCC = 4.75V
-40
1350 1650
LO FREQUENCY (MHz)
15501450
RF-TO-IF ISOLATION
vs. RF FREQUENCY
50
40
TC = -40°C, +25°C, +85°C
30
RF-TO-IF ISOLATION (dB)
20
1700 2000
1800 1900
RF FREQUENCY (MHz)
-40
1350 1650
50
MAX19994A toc107
40
30
RF-TO-IF ISOLATION (dB)
20
15501450
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
PLO = -3dBm, 0dBm, +3dBm
1800 19001700 2000
RF FREQUENCY (MHz)
-40
1350 1650
50
MAX19994A toc108
40
30
RF-TO-IF ISOLATION (dB)
20
15501450
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
MAX19994A toc109
VCC = 4.75V, 5.0V, 5.25V
1800 19001700 2000
RF FREQUENCY (MHz)
19
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is
low-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
MAX19994A
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
-70
1300 2050
LO FREQUENCY (MHz)
TC = -40°C
TC = +25°C
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-20
-30
TC = +25°C
-40
2LO LEAKAGE AT RF PORT (dBm)
-50
TC = -40°C
TC = +85°C
TC = +85°C
1900175016001450
-20
-30
MAX19994A toc110
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
-70
1300 2050
-10
-20
MAX19994A toc113
PLO = +3dBm
-30
-40
2LO LEAKAGE AT RF PORT (dBm)
-50
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
PLO = +3dBm
PLO = -3dBm
PLO = 0dBm
1900175016001450
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
PLO = 0dBm
PLO = -3dBm
-20
-30
MAX19994A toc111
-40
-50
LO LEAKAGE AT RF PORT (dBm)
-60
-70
1300 2050
-10
-20
MAX19994A toc114
-30
-40
2LO LEAKAGE AT RF PORT (dBm)
-50
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19994A toc112
VCC = 4.75V, 5.0V, 5.25V
1900175016001450
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
VCC = 5.25V
MAX19994A toc115
VCC = 5.0V
VCC = 4.75V
-60
1300 2050
LO FREQUENCY (MHz)
LO SWITCH ISOLATION vs. LO FREQUENCY
65
TC = -40°C
TC = +25°C
55
45
LO SWITCH ISOLATION (dB)
35
1300 2000
TC = +85°C
LO FREQUENCY (MHz)
20
1900175016001450
-60
1300 2050
LO FREQUENCY (MHz)
1900175016001450
LO SWITCH ISOLATION vs. LO FREQUENCY
65
MAX19994A toc116
55
45
LO SWITCH ISOLATION (dB)
182516501475
35
1300 2000
PLO = -3dBm, 0dBm, +3dBm
182516501475
LO FREQUENCY (MHz)
-60
1300 2050
LO SWITCH ISOLATION vs. LO FREQUENCY
65
MAX19994A toc117
55
45
LO SWITCH ISOLATION (dB)
35
1300 2000
1900175016001450
LO FREQUENCY (MHz)
MAX19994A toc118
VCC = 4.75V, 5.0V, 5.25V
182516501475
LO FREQUENCY (MHz)
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is
low-side injected for a 350MHz IF, P
= -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
RF
MAX19994A
RF PORT RETURN LOSS
vs. RF FREQUENCY
0
IF = 350MHz
5
10
15
20
RF PORT RETURN LOSS (dB)
25
30
1700 2000
PLO = -3dBm, 0dBm, +3dBm
19001800
RF FREQUENCY (MHz)
LO UNSELECTED PORT RETURN LOSS
0
10
20
30
LO UNSELECTED PORT RETURN LOSS (dB)
40
1400 2200
0
5
MAX19994A toc119
10
15
20
IF PORT RETURN LOSS (dB)
25
30
vs. LO FREQUENCY
PLO = -3dBm, 0dBm, +3dBm
200018001600
LO FREQUENCY (MHz)
IF PORT RETURN LOSS
vs. IF FREQUENCY
VCC = 4.75V, 5.0V, 5.25V
50 500
IF FREQUENCY (MHz)
MAX19994A toc122
410320230140
360
350
340
330
320
SUPPLY CURRENT (mA)
310
300
-40 85
LO SELECTED PORT RETURN LOSS
0
MAX19994A toc120
10
PLO = +3dBm
PLO = 0dBm
20
30
LO SELECTED PORT RETURN LOSS (dB)
40
1400 2200
SUPPLY CURRENT
vs. TEMPERATURE (T
V
= 5.25V
CC
V
= 5.0V
CC
VCC = 4.75V
TEMPERATURE (°C)
vs. LO FREQUENCY
PLO = -3dBm
LO FREQUENCY (MHz)
)
C
MAX19994A toc123
603510-15
MAX19994A toc121
200018001600
21
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Pin Configuration/Functional Block Diagram
TOP VIEW
LO_ADJ_M
MAX19994A
N.C.
V
IND_EXTM
IFM-
IFM+
GND
IFM_SET
V
LO2
GND
GND
GND
28
29
30
CC
MAX19994A
31
32
33
34
35
36
CC
+
1 2 3 4 5
CC
V
TAPMAIN
GND
TQFN
RFMAIN
(6mm × 6mm)
EXPOSED PAD ON THE BOTTOM OF THE PACKAGE
LOSEL
GND
VCCGND
EXPOSED PAD
6 7 8 9
CC
V
GND
GND
TAPDIV
192021222324252627
LO1
RFDIV
18
17
16
15
14
13
12
11
10
N.C.
LO_ADJ_D
V
CC
IND_EXTD
IFD-
IFD+
GND
IFD_SET
V
CC
Pin Description
PIN NAME FUNCTION
1 RFMAIN
2 TAPMAIN
3, 5, 7,
12, 20,
22, 24,
25, 26, 34
4, 6, 10,
16, 21,
30, 36
8 TAPDIV
22
GND Ground
V
CC
Main Channel RF input. Internally matched to 50I. Requires an input DC-blocking capacitor.
Main Channel Balun Center Tap. Bypass to GND with 39pF and 0.033FF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.
Power Supply. Bypass to GND with capacitors as close as possible to the pin, as shown in the
Typical Application Circuit.
Diversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO
Buffer/Switch
Pin Description (continued)
PIN NAME FUNCTION
9 RFDIV
11 IFD_SET
13, 14 IFD+, IFD-
15 IND_EXTD
17 LO_ADJ_D
18, 28 N.C. No Connection. Not internally connected.
19 LO1
23 LOSEL Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2.
27 LO2
29 LO_ADJ_M
31 IND_EXTM
32, 33 IFM-, IFM+
35 IFM_SET
— EP
Diversity Channel RF input. Internally matched to 50I. Requires an input DC-blocking capacitor.
IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current
for the diversity IF amplifier (see the Typical Application Circuit).
CC
CC
(see
Diversity Mixer Differential IF Output +/-. Connect pullup inductors from each of these pins to V
(see the Typical Application Circuit).
Diversity External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and
LO-to-IF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical
Application Circuit).
LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current
for the diversity LO amplifier (see the Typical Application Circuit).
Local Oscillator 1 Input. This input is internally matched to 50I. Requires an input DC-blocking
capacitor.
Local Oscillator 2 Input. This input is internally matched to 50I. Requires an input DC-blocking
capacitor.
LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the main LO amplifier (see the Typical Application Circuit).
Main External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and LO-toIF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Application
Circuit).
Main Mixer Differential IF Output -/+. Connect pullup inductors from each of these pins to V
the Typical Application Circuit).
IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the main IF amplifier (see the Typical Application Circuit).
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses
multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These
multiple ground vias are also required to achieve the noted RF performance.
MAX19994A
Detailed Description
The MAX19994A is a dual-channel downconverter
designed to provide up to 8.4dB of conversion gain,
+25dBm input IP3, +14dBm 1dB input compression
point, and a noise figure of 9.8dB.
In addition to its high-linearity performance, the device
achieves a high level of component integration. The
device integrates two double-balanced mixers for twochannel downconversion. Both the main and diversity
channels include a balun and matching circuitry to allow
50I single-ended interfaces to the RF ports and the two
LO ports. An integrated single-pole/double-throw (SPDT)
switch provides 50ns switching time between the two LO
inputs, with 48dB of LO-to-LO isolation and -42dBm of
LO leakage at the RF port. Furthermore, the integrated
LO buffers provide a high drive level to each mixer core,
reducing the LO drive required at the device's inputs to
a range of -6dBm to +3dBm. The IF ports for both channels incorporate differential outputs for downconversion,
which is ideal for providing enhanced 2LO - 2RF performance.
With an optimized 1450MHz to 2050MHz LO frequency
range, this mixer supports both high- and low-side LO
injection architectures for the 1200MHz to 1700MHz
and 1700MHz to 2000MHz RF bands, respectively. The
device also supports an IF range of 50MHz to 500MHz.
The external IF components set the lower frequency
range (see the Typical Operating Characteristics for
23
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
details). Operation beyond these ranges is possible;
see the Typical Operating Characteristics for additional
information.
Although this device is optimized for a 1450MHz to
2050MHz LO frequency range, it can operate with
even lower LO frequencies to support 1200MHz to
1700MHz low-side LO injection architectures. However,
performance degrades as f
Contact the factory for a variant with increased low-side
LO performance.
MAX19994A
The RF input ports for both the main and diversity channels are internally matched to 50I, requiring no external matching components when operating the device
over a 1200MHz to 1700MHz RF frequency range.
A DC-blocking capacitor is required as the input is
internally DC shorted to ground through the on-chip
balun. The RF port input return loss is typically better
than 15dB over the 1200MHz to 1700MHz RF frequency
range.
The RF inputs of the device can also be matched to
operate over an extended 1700MHz to 2000MHz RF
frequency range of with the addition of two shunt 4.7nH
inductors. See Table 1 for details.
continues to decrease.
LO
RF Port and Balun
LO Inputs, Buffer, and Balun
The device is optimized for a 1450MHz to 2050MHz
LO frequency range. As an added feature, the device
includes an internal LO SPDT switch for use in frequencyhopping applications. The switch selects one of the two
single-ended LO ports, allowing the external oscillator to
settle on a particular frequency before it is switched in.
LO switching time is typically 50ns, which is more than
adequate for typical GSM applications. If frequency hopping is not employed, simply set the switch to either of
the LO inputs. The switch is controlled by a digital input
(LOSEL), where logic-high selects LO1 and logic-low
selects LO2. LO1 and LO2 inputs are internally matched
to 50I, requiring only 39pF DC-blocking capacitors.
If LOSEL is connected directly to a logic source, then
voltage MUST be applied to V
is applied to LOSEL to avoid damaging the part.
Alternatively, a 1kI resistor can be placed in series at
the LOSEL to limit the input current in applications where
LOSEL is applied before V
The main and diversity channels incorporate a two-stage
LO buffer that allows for a wide-input power range for
the LO drive. The on-chip low-loss baluns, along with LO
buffers, drive the double-balanced mixers. All interfacing
CC
before digital logic
CC
.
and matching components from the LO inputs to the IF
outputs are integrated on-chip.
High-Linearity Mixer
The core of the MAX19994A dual-channel downconverter consists of two double-balanced, high-performance
passive mixers. Exceptional linearity is provided by the
large LO swing from the on-chip LO buffers. When combined with the integrated IF amplifiers, the cascaded
IIP3, 2LO - 2RF rejection, and noise-figure performance
are typically +25dBm, 68dBc, and 9.8dB, respectively.
Differential IF
The device has a 50MHz to 500MHz IF frequency range,
where the low-end frequency depends on the frequency
response of the external IF components. Note that these
differential ports are ideal for providing enhanced IIP2
performance. Single-ended IF applications require a
4:1 (impedance ratio) balun to transform the 200I differential IF impedance to a 50I single-ended system.
After the balun, the return loss is typically 13dB. The user
can use a differential IF amplifier on the mixer IF ports,
but a DC block is required on both IFD+/IFD- and IFM+/
IFM- ports to keep external DC from entering the IF ports
of the mixer.
Applications Information
Input and Output Matching
The RF and LO inputs are internally matched to
50I when operating over 1200MHz to 1700MHz and
1450MHz to 2050MHz frequency ranges, respectively.
No matching components are required for operation
within these bands. The RF port input return loss is
typically better than 15dB over the 1200MHz to 1700MHz
RF frequency range and return loss at the LO ports is
typically better than 15dB over the entire LO range. RF
and LO inputs require only DC-blocking capacitors for
interfacing.
If operating the device over the Extended RF Band of
1700MHz to 2000MHz, simply change the DC-blocking
capacitors to 1.8pF and add a shunt 4.7nH inductor to
each RF port. See Table 1 for details. When matched with
this alternative set of elements, the RF port input return
loss is typically better than 14dB over the 1700MHz to
2000MHz band.
The IF output impedance is 200I (differential). For evaluation, an external low-loss 4:1 (impedance ratio) balun
transforms this impedance to a 50I single-ended output
(see the Typical Application Circuit).
24
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO
Reduced-Power Mode
Each channel of the device has two pins (LO_ADJ__,
IF__SET) that allow external resistors to set the internal
bias currents. Nominal values for these resistors are
given in Table 1. Larger value resistors can be used to
reduce power dissipation at the expense of some performance loss. If ±1% resistors are not readily available,
substitute with ±5% resistors.
Significant reductions in power consumption can also
be realized by operating the mixer with an optional 3.3V
supply voltage. Doing so reduces the overall power consumption by approximately 47%. See the 3.3V Supply
AC Electrical Characteristics table and the relevant 3.3V
curves in the Typical Operating Characteristics section.
IND_EXT_ Inductors
For applications requiring optimum RF-to-IF and LO-toIF isolation, connect low-ESR inductors from IND_EXT_
(pins 15 and 31) to ground. When improved isolation
is not required, connect IND_EXT_ to ground using 0I
resistance.
Layout Considerations
A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
The load impedance presented to the mixer must be
such that any capacitance from both IF_- and IF_+ to
Buffer/Switch
ground does not exceed several picofarads. For the
best performance, route the ground pin traces directly
to the exposed pad under the package. The PCB
exposed pad MUST be connected to the ground plane
of the PCB. Use multiple vias to connect this pad to the
lower-level ground planes. This method provides a good
RF/thermal-conduction path for the device. Solder the
exposed pad on the bottom of the device package to
the PCB. The MAX19994A evaluation kit can be used as
a reference for board layout. Gerber files are available
upon request at www.maxim-ic.com.
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each V
TAPMAIN/TAPDIV with the capacitors shown in the
Typical Application Circuit (see Table 1 for component
values). Place the TAPMAIN/TAPDIV bypass capacitors
to ground within 100 mils of the pin.
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX19994A’s 36-pin thin
QFN-EP package provides a low thermal-resistance
path to the die. It is important that the PCB on which the
device is mounted be designed to conduct heat from
the EP. In addition, provide the EP with a low-inductance
path to electrical ground. The EP MUST be soldered to
a ground plane on the PCB, either directly or through an
array of plated via holes.
pin and
CC
MAX19994A
Table 1. Component Values
DESIGNATION QTY DESCRIPTION COMPONENT SUPPLIER
39pF microwave capacitors (0402)
C1, C8 2
C2, C7, C14, C16 4 39pF microwave capacitors (0402) Murata Electronics North America, Inc.
C3, C6 2 0.033FF microwave capacitors (0603) Murata Electronics North America, Inc.
C4, C5 2 Not used —
C9, C13, C15,
C17, C18
C10, C11, C12,
C19, C20, C21
L1, L2, L4, L5 4 120nH wire-wound, high-Q inductors (0805) Coilcraft, Inc.
L3, L6 2
L7, L8 2
1.8pF for Extended RF Band applications
= 1.7GHz to 2GHz)
(f
RF
5 0.01FF microwave capacitors (0402) Murata Electronics North America, Inc.
6 150pF microwave capacitors (0603) Murata Electronics North America, Inc.
10nH wire-wound, high-Q inductors (0603). Smaller
values or a 0I resistor can be used at the expense of
some LO leakage at the IF port and RF-to-IF isolation
performance loss.
4.7nH inductor (0603). Installed for Extended RF Band
applications only (1.7GHz to 2GHz).
Murata Electronics North America, Inc.
Coilcraft, Inc.
TOKO America, Inc.
25
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Table 1. Component Values (continued)
DESIGNATION QTY DESCRIPTION COMPONENT SUPPLIER
681I ±1% resistors (0402). Used for V
applications. Larger values can be used to reduce
R1, R4 2
power at the expense of some performance loss.
681I ±1% resistors (0402). Used for V
applications.
1.82kI ±1% resistors (0402). Used for V
applications. Larger values can be used to reduce
MAX19994A
R2, R5 2
power at the expense of some performance loss.
1.43kI ±1% resistors (0402). Used for V
applications.
R3, R6 2 0I resistors (1206) Digi-Key Corp.
T1, T2 2 4:1 transformers (200:50) TC4-1W-17 Mini-Circuits
U1 1 MAX19994A IC (36 TQFN-EP) Maxim Integrated Products, Inc.
Typical Application Circuit
CC
= 3.3V
CC
CC
CC
V
CC
= 5.0V
= 5.0V
= 3.3V
LO1LO2 LO SELECT
C15
Digi-Key Corp.
Digi-Key Corp.
IF MAIN OUTPUT
C21 C20C19
C14C16
LO2
GND
GND
GND
LOSEL
GND
VCCGND
LO1
EXPOSED PAD
GND
TAPDIV
C7
192021222324252627
RFDIV
N.C.
18
LO_ADJ_D
17
V
CC
16
IND_EXTD
15
L6
IFD-
14
IFD+
13
GND
12
IFD_SET
11
V
CC
10
C9
C8
V
CC
C13
V
CC
R5
R4
T14:1
N.C.
28
LO_ADJ_M
IND_EXTM
L3
IFM-
IFM+
GND
IFM_SET
C18
29
V
CC
30
MAX19994A
31
32
33
34
35
V
CC
36
+
1 2 3 4 5
GND
RFMAIN
TAPMAIN
C2
C1
L7 L8
RF MAIN INPUT RF DIV INPUT
C3 C4 C5 C6
V
CC
V
CC
6 7 8 9
CC
V
GND
V
CC
V
CC
R2
R3
V
CC
C17
V
CC
R1
IF DIV OUTPUT
R6
V
CC
4:1T2
C12 C10C11
L4L5L2L1
26
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO
Chip Information
PROCESS: SiGe BiCMOS
Buffer/Switch
Package Information
For the latest package outline information and land patterns,
go to www.maxim-ic.com/packages. Note that a “+”, “#”, or
“-” in the package code indicates RoHS status only. Package
drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.
PACKAGE TYPE PACKAGE CODE DOCUMENT NO.
36 Thin QFN-EP T3666+2
21-0141
MAX19994A
27
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Revision History
REVISION
NUMBER
0 4/10 Initial release —
REVISION
DATE
MAX19994A
DESCRIPTION
PAGES
CHANGED
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied.
Maxim reserves the right to change the circuitry and specifications without notice at any time.
28 Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
©
2010 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc.
Loading...