The MAX19993 dual-channel downconverter is designed
to provide 6.4dB of conversion gain, +27dBm input IP3,
15.4dBm 1dB input compression point, and a noise
figure of 9.8dB for 1200MHz to 1700MHz diversity
receiver applications. With an optimized LO frequency
range of 1000MHz to 1560MHz, this mixer is ideal
for low-side LO injection architectures. High-side LO
injection is supported by the MAX19993A, which is pinpin and functionally compatible with the MAX19993.
In addition to offering excellent linearity and noise
performance, the MAX19993 also yields a high level
of component integration. This device includes two
double-balanced passive mixer cores, two LO buffers, a
dual-input LO selectable switch, and a pair of differential
IF output amplifiers. Integrated on-chip baluns allow for
single-ended RF and LO inputs. The device requires a
nominal LO drive of 0dBm and a typical supply current of
337mA at V
The MAX19993 is pin compatible with the MAX9985/
MAX19985A/MAX9995/MA X 1 9 9 9 3 A / M A X 1 9 9 9 4 /
MAX19994A/MAX19995/MAX19995A series of 700MHz
to 2200MHz mixers and pin similar to the MAX19997A/
MAX19999 series of 1850MHz to 4000MHz mixers,
making this entire family of downconverters ideal for
applications where a common PCB layout is used across
multiple frequency bands.
The device is available in a 6mm x 6mm, 36-pin TQFN
package with an exposed pad. Electrical performance is
guaranteed over the extended temperature range, from
= -40NC to +85NC.
T
C
= +5.0V or 275mA at VCC = +3.3V.
CC
Applications
WCDMA/LTE Base Stations
Wireless Local Loop
Fixed Broadband Wireless Access
Private Mobile Radios
Military Systems
Features
S 1200MHz to 1700MHz RF Frequency Range
S 1000MHz to 1560MHz LO Frequency Range
S 50MHz to 500MHz IF Frequency Range
S 6.4dB Typical Conversion Gain
S 9.8dB Typical Noise Figure
S +27dBm Typical Input IP3
S 15.4dBm Typical Input 1dB Compression Point
S 72dBc Typical 2RF - 2LO Spurious Rejection at
= -10dBm
P
RF
S Dual Channels Ideal for Diversity Receiver
Applications
S 47dB Typical Channel-to-Channel Isolation
S Low -6dBm to +3dBm LO Drive
S Integrated LO Buffer
S Internal RF and LO Baluns for Single-Ended
Inputs
S Built-In SPDT LO Switch with 57dB LO-to-LO
Isolation and 50ns Switching Time
S Pin Compatible with the MAX9985/MAX19985A/
MAX9995/MAX19993A/MAX19994/MAX19994A/
MAX19995/MAX19995A Series of 700MHz to
2200MHz Mixers
S Pin Similar to the MAX19997A/MAX19999 Series
of 1850MHz to 4000MHz Mixers
S Single +5V or +3.3V Supply
S External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/ReducedPerformance Mode
Ordering Information
PARTTEMP RANGEPIN-PACKAGE
MAX19993ETX+
MAX19993ETX+T
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
VCC to GND ..........................................................-0.3V to +5.5V
LO1, LO2 to GND .............................................................. Q0.3V
LOSEL to GND ......................................... -0.3V to (V
RFMAIN, RFDIV, and LO_ Input Power ........................ +15dBm
RFMAIN, RFDIV Current (RF is DC shorted to GND
through a balun) .............................................................50mA
TAPMAIN, TAPDIV to GND .....................................-0.3V to +2V
Any Other Pins to GND ............................ -0.3V to (V
MAX19993
Note 1: Based on junction temperature TJ = TC + (BJC x VCC x ICC). This formula can be used when the temperature of the
exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details.
The junction temperature must not exceed +150NC.
Note 2: Junction temperature T
known. The junction temperature must not exceed +150NC.
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
= TA + (BJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is
J
+ 0.3V)
CC
+ 0.3V)
CC
Continuous Power Dissipation (Note 1) ..............................8.7W
Junction Temperature .....................................................+150NC
Storage Temperature Range ............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
= -40NC to +85NC
C
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 4.75V to 5.25V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I,
R2 = R5 = 1.82kI. Typical values are at V
= 5.0V, TC = +25NC, unless otherwise noted. All parameters are production tested.)
CC
CC
CC
Total supply current337400mA
IH
IL
4.7555.25V
2V
0.8V
-10+10
FA
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 3.0V to 3.6V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.43kI.
Typical values are at V
tested.)
= 3.3V, TC = +25NC, unless otherwise noted. Parameters are guaranteed by design and not production
CC
CC
CC
Total supply current (Note 5)275mA
IH
IL
3.03.33.6V
2V
0.8V
2
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
RECOMMENDED AC OPERATING CONDITIONS
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
RF Frequencyf
LO Frequencyf
IF Frequencyf
RF
LO
(Note 6)12001700MHz
(Note 6)10001560MHz
Using Mini-Circuits TC4-1W-17 4:1 transformer as defined in the Typical Application Circuit, IF matching components affect the
IF frequency range (Note 6)
IF
Using Mini-Circuits TC4-1W-7A 4:1 transformer as defined in the Typical Application Circuit, IF matching components affect the
IF frequency range (Note 6)
100500
50250
MAX19993
MHz
LO Drive LevelP
(Note 6)-6+3dBm
LO
5.0V SUPPLY, LOW-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from
50I sources, P
T
= -40NC to +85NC. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1310MHz, fIF = 140MHz,
C
TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 7)
Conversion Gain (Note 5)G
Conversion Gain FlatnessDG
Gain Variation Over TemperatureTC
Input Compression PointIP
Input Third-Order Intercept PointIIP3
Input Third-Order Intercept Point
Variation Over Temperature
Noise Figure (Note 9)NF
= -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, f
LO
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
C
C
CG
1dBfRF
TC
IIP3
SSB
= +25NC5.16.47.0
C
= +25NC, fRF = 1427MHz to 1463MHz5.26.46.9
T
C
fRF = 1427MHz to 1463MHzQ0.03dB
TC = -40NC to +85NC-0.009dB/NC
= 1450MHz (Notes 5, 8)12.915.4dBm
f
- f
RF1
f
RF1
f
RF
(Note 5)
f
RF1
f
RF
f
RF1
T
C
Single sideband, no blockers present9.812.7
f
RF
P
LO
present
f
RF
single sideband, no blockers present
= 1MHz, PRF = -5dBm per tone24.027.0
RF2
- f
= 1MHz, PRF = -5dBm per tone,
RF2
= 1427MHz to 1463MHz, TC = +25NC
- f
= 1MHz, PRF = -5dBm per tone,
RF2
= 1427MHz to 1463MHz (Note 5)
- f
= 1MHz, PRF = -5dBm per tone,
RF2
= -40NC to +85NC
= 1427MHz to 1463MHz, TC = +25NC,
= 0dBm, single sideband, no blockers
= 1427MHz to 1463MHz, PLO = 0dBm,
= 1060MHz to 1560MHz, fIF = 140MHz, fRF > fLO,
LO
4.56.47.4
24.827.0
24.427.0
Q0.5dBm
9.811.0
9.812.0
dBm
dBT
dB
3
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
5.0V SUPPLY, LOW-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from
50I sources, P
T
= -40NC to +85NC. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1310MHz, fIF = 140MHz,
C
TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 7)
Noise Figure Temperature
Coefficient
MAX19993
Noise Figure with BlockerNF
2RF - 2LO Spur Rejection
(Note 9)
3RF - 3LO Spur Rejection
(Note 9)
RF Input Return Loss
LO Input Return Loss
IF Output ImpedanceZ
IF Output Return Loss
RF-to-IF Isolation(Note 5)33dB
LO Leakage at RF Port-38dBm
2LO Leakage at RF Port-27dBm
= -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz, f
LO
= 1060MHz to 1560MHz, fIF = 140MHz, fRF > fLO,
LO
PARAMETERSYMBOLCONDITIONSMINTYPMAXUNITS
TC
Single sideband, no blockers present,
NF
T
= -40NC to +85NC
C
P
BLOCKER
f
LO
B
P
LO
= +8dBm, fRF = 1450MHz,
= 1310MHz, f
BLOCKER
= 0dBm, VCC = 5.0V, TC = +25NC
= 1550MHz,
0.016
21.022.8dB
(Notes 9, 10)
= 1450MHz,
f
2x2
3x3
RF
f
= 1310MHz,
LO
f
= 1380MHz
SPUR
= 1450MHz,
f
RF
f
= 1310MHz,
LO
f
= 1380MHz,
SPUR
P
= 0dBm,
LO
V
= 5.0V,
CC
T
= +25NC
C
f
= 1450MHz,
RF
f
= 1310MHz,
LO
f
= 1356.67MHz
SPUR
f
= 1450MHz,
RF
f
= 1310MHz,
LO
f
= 1356.67MHz,
SPUR
P
= 0dBm,
LO
V
= 5.0V,
CC
T
= +25NC
C
LO and IF terminated into matched
impedance, LO on
LO port selected, RF and IF terminated into
matched impedance
LO port unselected, RF and IF terminated
into matched impedance
Nominal differential impedance of the IF
IF
outputs
P
= -10dBm5872
RF
= -5dBm5367
P
RF
P
= -10dBm6172
RF
= -5dBm5667
P
RF
P
= -10dBm7793
RF
= -5dBm6783
P
RF
= -10dBm8293
P
RF
= -5dBm7283
P
RF
21dB
24
27
200
RF terminated into 50I, LO driven by
50I source, IF transformed to 50I using
external components shown in the Typical
15dB
Application Circuit
dB/NC
dBc
dBc
dBc
dBc
dB
I
4
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
5.0V SUPPLY, LOW-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V to 5.25V, RF and LO ports are driven from
50I sources, P
T
= -40NC to +85NC. Typical values are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1310MHz, fIF = 140MHz,
C
TC = +25NC. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 7)
LO Leakage at IF Port(Note 5)-18dBm
Channel Isolation (Note 5)
LO-to-LO Isolation
LO Switching Time50% of LOSEL to IF settled within 2 degrees50ns
3.3V SUPPLY, LOW SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical values are at VCC = 3.3V, PRF = -5dBm, PLO = 0dBm,
f
RF-to-IF Isolation33dB
LO Leakage at RF Port-45dBm
2LO Leakage at RF Port-27dBm
LO Leakage at IF Port-22dBm
Channel Isolation
LO-to-LO Isolation
LO Switching Time
Note 5: 100% production tested for functionality.
Note 6: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See
the Typical Operating Characteristics section.
Note 7: All limits reflect losses of external components, including a 0.5dB loss at f
measurements were taken at IF outputs of the Typical Application Circuit.
Note 8: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50I source.
Note 9: Not production tested.
Note 10: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects
of all SNR degradations in the mixer, including the LO noise as defined in Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
50I source, IF transformed to 50I using
external components shown in the Typical
Application Circuit
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50I
RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50I
= +3dBm, P
P
LO1
f
= 1310MHz, f
LO1
50% of LOSEL to IF settled within
2 degrees
= +3dBm,
LO2
= 1311MHz
LO2
= 140MHz due to the 4:1 transformer. Output
IF
15dB
47
47
57dB
50ns
dB
6
Dual, SiGe, High-Linearity, 1200MHz to 1700MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics
(Typical Application Circuit (see Table 1). V
otherwise noted.)
CC
= 5.0V, f
RF
> f
for a 140MHz IF, P
LO
= -5dBm, P
RF
= 0dBm,
LO
= +25°C, unless
TC
MAX19993
CONVERSION GAIN vs. RF FREQUENCY
8
7
6
CONVERSION GAIN (dB)
5
4
TC = +25°C
12001700
RF FREQUENCY (MHz)
TC = -40°C
TC = +85°C
INPUT IP3 vs. RF FREQUENCY
28
27
INPUT IP3 (dBm)
26
TC = +85°C
PRF = -5dBm/TONE
TC = +25°C
TC = -40°C
CONVERSION GAIN vs. RF FREQUENCY
8
MAX19993 toc01
1600150014001300
7
6
PLO = -6dBm, -3dBm, 0dBm, +3dBm
CONVERSION GAIN (dB)
5
4
12001700
RF FREQUENCY (MHz)
1600150014001300
MAX19993 toc02
INPUT IP3 vs. RF FREQUENCY
MAX19993 toc04
28
27
INPUT IP3 (dBm)
26
PLO = +3dBm
PLO = -3dBm
PRF = -5dBm/TONE
MAX19993 toc05
PLO = 0dBm
CONVERSION GAIN vs. RF FREQUENCY
8
7
6
CONVERSION GAIN (dB)
5
4
12001700
VCC = 4.75V, 5.0V, 5.25V
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
28
27
INPUT IP3 (dBm)
26
PRF = -5dBm/TONE
VCC = 5.25V
VCC = 5.0V
MAX19993 toc03
1600150014001300
MAX19993 toc06
25
12001700
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
NOISE FIGURE (dB)
9
8
7
TC = +85°C
TC = +25°C
TC = -40°C
12001700
RF FREQUENCY (MHz)
PLO = -6dBm
1600150014001300
25
12001700
RF FREQUENCY (MHz)
1600150014001300
NOISE FIGURE vs. RF FREQUENCY
13
12
MAX19993 toc07
11
10
NOISE FIGURE (dB)
9
PLO = -6dBm, -3dBm, 0dBm, +3dBm
8
1600150014001300
7
12001700
RF FREQUENCY (MHz)
1600150014001300
MAX19993 toc08
NOISE FIGURE (dB)
25
12001700
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
9
8
7
12001700
VCC = 4.75V
1600150014001300
RF FREQUENCY (MHz)
MAX19993 toc09
VCC = 4.75V, 5.0V, 5.25V
1600150014001300
RF FREQUENCY (MHz)
7
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