MAXIM MAX1840, MAX1841 Technical data

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General Description
The MAX1840/MAX1841 subscriber identity module (SIM)/smart card level translators provide level shifting and electrostatic discharge (ESD) protection for SIM and smart card ports. These devices integrate two unidirec­tional level shifters for the reset and clock signals, a bidi­rectional level shifter for the serial data stream, and ±10kV ESD protection on all card contacts.
The MAX1840 includes a SHDN control input to aid insertion and removal of SIM and smart cards, while the MAX1841 includes a system-side data driver to support system controllers without open-drain outputs. The logic supply voltage range is +1.4V to +5.5V for the “controller side” and +1.7V to +5.5V for the “card side.” Total sup­ply current is 1.0µA. Both devices automatically shut down when either power supply is removed. For a com­plete SIM card interface, combine the MAX1840/ MAX1841 with the MAX1686H 0V/3V/5V regulated charge pump.
The MAX1840/MAX1841 are available in ultra-small 10-pin µMAX packages that are only 1.09mm high and half the area of an 8-pin SO.
The MAX1840/MAX1841 are compliant with GSM test specifications 11.11 and 11.12.
Applications
SIM Interface in GSM Cellular Telephones
Smart Card Readers
Logic Level Translation
SPI™/QSPI™/MICROWIRE™ Level Translation
Features
SIM/Smart Card Level Shifting
+1.4V to +5.5V Controller Voltage Range
+1.7V to +5.5V Card Voltage Range
±10kV ESD Card Socket Protection
Allows Level Translation with DV
CC
V
CC
or
DV
CC
V
CC
Automatically Shuts Down When Either Supply Is
Removed
Card Contacts Actively Pulled Low During
Shutdown
1µA Total Quiescent Supply Current
0.01µA Total Shutdown Supply Current
Ultra-Small 10-Pin µMAX Package
Compliant with GSM Test Specifications 11.11
and 11.12
MAX1840/MAX1841
Low-Voltage SIM/Smart Card
Level Translators in µMAX
________________________________________________________________ Maxim Integrated Products 1
Typical Operating Circuit
19-1716; Rev 0; 4/00
PART
MAX1840EUB
MAX1841EUB
-40°C to +85°C
-40°C to +85°C
TEMP. RANGE PIN-PACKAGE
10 µMAX
10 µMAX
Pin Configuration
Ordering Information
SPI and QSPI are trademarks of Motorola, Inc. MICROWIRE is a trademark of National Semiconductor Corp.
DV
SYSTEM
CONTROLLER
GND
CC
DV
CC
OPTIONAL
OPTIONAL
DV
CC
RIN
MAX1840 MAX1841
CIN
DATA
SHDN*
DDRV*
*
SHDN FOR MAX1840 ONLY; DDRV FOR MAX1841 ONLY.
CLK
GND GND
V
CC
V
CC
IO
V
RSTRST
CLK
IO
CC
SIM OR SMART
CARD
TOP VIEW
IO1DATA
10
DV
2
CC
CIN
3
MAX1840
4
5
MAX1841
µMAX
RIN
( ) ARE FOR MAX1841.
9
V
CC
CLK
8
RST
7
GNDSHDN (DDRV)
6
MAX1840/MAX1841
Low-Voltage SIM/Smart Card Level Translators in µMAX
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(Figure 1, DVCC= +1.8V; VCC= +1.8V, +3.0V, or +5.0V; SHDN = DVCC, CIN = RIN = GND or DVCC, IO = VCC, DATA = DDRV = DVCC, C
IO
= C
CLK
= C
RST
= C
DATA
= 30pF, TA= -40°C to +85°C, unless otherwise noted. Typical values are at TA= +25°C.) (Note1)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DVCC, VCCto GND................................................-0.3V to +6.0V
RIN, CIN, DATA, DDRV,
SHDN to GND......................................-0.3V to (DV
CC
+ 0.3V)
RST, CLK, IO to GND .................................-0.3V to (V
CC
+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C)
10-Pin µMAX (derate 5.6mW/°C above +70°C) ...........444mW
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
UNITS
DVCCOperating Range DV
CC
1.4 5.5
V
V
CC
Operating Range V
CC
1.7 5.5
V
DVCCOperating Current I
DVCC
CIN static
0.1 0.5
µA
CIN clocked at 1.625MHz from GND to DV
CC
with 50% duty cycle
CONDITIONS
2.5
CIN clocked at 3.25MHz from GND to DV
CC
with 50% duty cycle
5
VCCOperating Current I
VCC
CIN static
0.9 3.0
mA
CIN clocked at 1.625MHz from GND to DV
CC
with 50% duty cycle
0.4
CIN clocked at 3.25MHz from GND to DV
CC
with 50% duty cycle
0.8
Total Shutdown Current I
SHDN
I
OFF
= I
VCC
+ I
DVCC
, SHDN = GND
(MAX1840 only), or DV
CC
= GND
or VCC= GND
0.01 1
µA
Digital Input Low Threshold V
IL
0.2 ✕DV
CC
V
Digital Input High Threshold V
IH
0.7 ✕DV
CC
V
Input Leakage Current
0.01 1
µA
Digital Output Low Level V
OL
I
SINK
= 200µA
0.4
V
Digital Output High Level V
OH
I
SOURCE
= 20µA
0.9 ✕V
CC
V
I
SOURCE
= 200µA
0.8 VCC
DATA Pullup Resistance R
DATA
Between DATA and DV
CC
13 20 28
k
Input Low Threshold V
IL(DATA)
(Note 2)
0.3
V
Input High Threshold V
IH(DATA)
(Note 3)
DVCC- 0.6
V
Input Low Current I
IL
VCC= 5.0V
1
mA
MIN TYP MAXSYMBOLPARAMETER
Input High Current I
IH
2
µA
POWER SUPPLIES
CIN, RIN, SHDN, DDRV LOGIC INPUTS
CLK, RST OUTPUTS
DATA INPUT/OUTPUT
µA
MAX1840/MAX1841
Low-Voltage SIM/Smart Card
Level Translators in µMAX
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(Figure 1, DVCC= +1.8V; VCC= +1.8V, +3.0V, or +5.0V; SHDN = DVCC, CIN = RIN = GND or DVCC, IO = VCC, DATA = DDRV = DVCC, C
IO
= C
CLK
= C
RST
= C
DATA
= 30pF, TA= -40°C to +85°C, unless otherwise noted. Typical values are at TA= +25°C.) (Note1)
UNITSCONDITIONS MIN TYP MAXSYMBOLPARAMETER
Output Low Level V
OL(DATA)
IO = GND, I
SINK
= 100µA
0.4 V
DVCC= 3.0V, IO = GND, I
SINK
= 200µA
0.4
Output High Level
I
SOURCE
= 10µA
0.7 ✕DV
CC
V
DVCC= 3.0V, I
SOURCE
= 20µA
0.7 ✕DV
CC
V
OH(DATA)
IO Pullup Resistance R
IO
Between IO and V
CC
6.5 10 14
k
Input Low Threshold V
IL(IO)IIL(MAX)
= 1mA (Note 2)
0.3
V
Input High Threshold V
IH(IO)IIH(MAX)
= ±20µA (Note 3)
0.7 ✕V
CC
V
Input Low Current I
IL
1
mA
Input High Current I
IH
20
µA
Output Low Level V
OL(IO)
DATA = GND or DDRV = GND, I
SINK
= 200µA
0.4
V
Output High Level V
OH(IO)ISOURCE
= 20µA
0.8 ✕V
CC
V
Shutdown Output Levels (IO, CLK, RST)
I
SINK
= 200µA, SHDN = GND, DATA = CIN =
RIN = DV
CC
(MAX1840 only)
0.4
V
I
SINK
= 200µA, DVCC= GND, SHDN (MAX1840) = DDRV (MAX1841) = DATA = CIN = RIN = DV
CC
0.4
V
I
SINK
= 200µA, VCC= GND, SHDN (MAX1840) = DDRV (MAX1841) = DATA = CIN = RIN = DV
CC
0.4
V
Maximum CLK Frequency (Notes 4, 5)
f
CLK
VCC= 2.7V to 5.5V, DVCC= 1.4V to 2.7V
520
MHz
VCC= 1.7V to 3.6V, DVCC= 1.4V to 2.25V
515
IO (INPUT/OUTPUT)
SHUTDOWN OUTPUT LEVELS
TIMING
Note 1: Specifications to -40°C are guaranteed by design, not production tested. Note 2: V
IL
is defined as the voltage at which the output (DATA/IO) voltage equals 0.5V.
Note 3: V
IH
is defined as the voltage at which the output (DATA/IO) voltage exceeds the input (IO/DATA) voltage by 100mV.
Note 4: Timing specifications are guaranteed by design, not production tested. Note 5: The maximum CLK frequency is defined as the output duty cycle remaining in the 40% to 60% range when the 50% CIN is
applied. CIN has 5ns rise and fall times; levels are GND to DV
CC
. Input and output levels are measured at 50% of the waveform.
MAX1840/MAX1841
Low-Voltage SIM/Smart Card Level Translators in µMAX
4 _______________________________________________________________________________________
Typical Operating Characteristics
(Circuit of Figure 1, DVCC= 3.0V, VCC= +5.0V, DDRV or DATA = DVCC, RIN = CIN = GND, TA= +25°C, unless otherwise noted.)
0
1.0
0.5
2.0
1.5
2.5
3.0
0426810
TOTAL OPERATING SUPPLY CURRENT
vs. CLOCK FREQUENCY (DATA STATIC)
MAX1840/1-01
FREQUENCY (MHz)
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
DATA OR DDRV = DV
CC
CIN CLOCKED WITH A 0 TO DV
CC
SQUARE WAVE
VCC = 5V
VCC = 3V
VCC = 1.8V
0
0.4
1.2
0.8
1.6
2.0
TOTAL OPERATING SUPPLY CURRENT
vs. CARD-SIDE SUPPLY VOLTAGE
(DATA STATIC)
MAX1840/1-02
VCC (V)
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
1.5 3.52.5 4.5 5.5
DATA OR DDRV = DV
CC
CIN CLOCKED WITH A 0 TO DV
CC
SQUARE WAVE
f
CIN
= 5MHz
f
CIN
= 3.25MHz
f
CIN
= 1.625MHz
1.6
1.2
0.8
0.4
0
-40 10-15 35 60 85
TOTAL OPERATING SUPPLY CURRENT
vs. TEMPERATURE (DATA STATIC)
MAX1840/1-03
TEMPERATURE (°C)
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
DATA OR DDRV = DV
CC
CIN CLOCKED WITH A 0 TO DV
CC
SQUARE WAVE
VCC = 5V
VCC = 3V
VCC = 1.8V
f
CIN
= 5MHz
0
1.0
0.5
2.0
1.5
2.5
3.0
0426810
TOTAL OPERATING SUPPLY CURRENT
vs. CLOCK FREQUENCY (DATA ACTIVE)
MAX1840/1-04
FREQUENCY (MHz)
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
f
DATA
OR f
DDRV
= f
CIN
/372 CIN CLOCKED WITH A 0 TO DV
CC
SQUARE WAVE
VCC = 5V
VCC = 3V
VCC = 1.8V
0
0.4
1.2
0.8
1.6
2.0
TOTAL OPERATING SUPPLY CURRENT
vs. CARD-SIDE SUPPLY VOLTAGE
(DATA ACTIVE)
MAX1840/1-05
VCC (V)
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
1.5 3.52.5 4.5 5.5
f
DATA
OR f
DDRV
= f
CIN
/372 CIN CLOCKED WITH A 0 TO DV
CC
SQUARE WAVE
f
CIN
= 5MHz
f
CIN
= 3.25MHz
f
CIN
= 1.625MHz
0
0.4
1.2
0.8
1.6
2.0
-40 10-15 35 60 85
TOTAL OPERATING SUPPLY CURRENT
vs. TEMPERATURE (DATA ACTIVE)
MAX1840/1-06
TEMPERATURE (°C)
SUPPLY CURRENT, I
VCC
+ I
DVCC
(mA)
f
DATA
OR f
DDRV
= f
CIN
/372 CIN CLOCKED WITH A 0 TO DV
CC
SQUARE WAVE
VCC = 5V
VCC = 3V
VCC = 1.8V
f
CIN
= 5MHz
CIN TO CLK OR RIN TO RST
WAVEFORM (3V TO 5V)
MAX1840/1-07
20ns/div
CIN OR RIN 2V/div
f
CIN
= 5MHz
0
0
3V
5V
CLK OR RST 2V/div
CIN TO CLK OR RIN TO RST
WAVEFORM (3V TO 1.8V)
MAX1840/1-08
20ns/div
CIN OR RIN 2V/div
f
CIN
= 5MHz
0
3V
1.8V
CLK OR RST 1V/div
0
CIN TO CLK OR RIN TO RST
WAVEFORM (1.8V TO 1.8V)
MAX1840/1-09
20ns/div
CIN OR RIN 1V/div
0
1.8V
1.8V CLK OR RST
1V/div
0
f
CIN
= 5MHz
MAX1840/MAX1841
Low-Voltage SIM/Smart Card
Level Translators in µMAX
_______________________________________________________________________________________ 5
Typical Operating Characteristics (continued)
(Circuit of Figure 1, DVCC= 3.0V, VCC= +5.0V, DDRV or DATA = DVCC, RIN = CIN = GND, TA= +25°C, unless otherwise noted.)
NAME
2 2 DV
CC
3 3 CIN
4 4 RIN
5 DDRV
8 8 CLK
7 7 RST
6 6 GND
5
SHDN
1 DATA1
System Controller Data Input/Output. An open-drain IO with a 20kpull-up resistor to DVCC. For bidirectional data transfer, connect to an open-drain controller output capable of sinking 1mA while pulling DATA low. If the controller is not open-drain, use DDRV to send data and DATA to receive data.
MAX1840 MAX1841
10 10 IO
9 9 V
CC
Card-Side Bidirectional Input/Output. An open-drain output with a 10kpull-up resistor to V
CC
. For bidirectional data transfer, connect to an open-drain card output capable of sink-
ing 1mA while pulling IO low. Actively pulled low during shutdown.
Supply Voltage for Card-Side Digital Pins. Set at +1.7V to +5.5V. Proper supply bypassing is required to meet ±10kV ESD specifications.
Clock Output to Card. Actively pulled low during shutdown.
Reset Output to Card. Actively pulled low during shutdown.
System Controller and Card Ground
Shutdown Mode Input. Driving SHDN low reduces the total supply current to less than 1µA. In shutdown mode, RST, CLK, and IO are actively pulled low and the transfer gate between DATA and IO is disabled. When not used, connect SHDN to DV
CC
.
Optional System Controller Data Input. Connect to controllers without an open-drain out­put. When not used, connect DDRV to DVCC.
System Controller Reset Input
System Controller Clock Input
Supply Voltage for System Controller Digital Pins. Set at +1.4V to +5.5V.
FUNCTION
PIN
Pin Description
1.5V
UNDERVOLTAGE
SHUTDOWN WAVEFORM
0
1V
0
1ms/div
MAX1840/1-10
V
CC
0.5V/div
CLK, RST, OR IO
0.5V/div
DDRV TO IO AND DATA WAVEFORM
(MAX1841 ONLY)
3V
0
3V
0
5V
0
1µs/div
MAX1840/1-11
DDRV 2V/div
DATA 2V/div
IO 2V/div
MAX1840/MAX1841
Low-Voltage SIM/Smart Card Level Translators in µMAX
6 _______________________________________________________________________________________
Detailed Description
The MAX1840/MAX1841 provide the necessary level translation for interfacing with SIMs and smart cards in multivoltage systems. These devices operate with logic supply voltages between +1.4V and +5.5V on the con­troller side (DVCC) and between +1.7V and +5.5V on the card side (VCC). The total supply current (I
DV
CC
+ I
V
CC
) is 1µA while operating in an idle state (see Electrical Characteristics). Figure 1 shows the MAX1840/MAX1841 test circuit. The Typical Application Circuit appears at the end of this data sheet.
Level Translation
The MAX1840/MAX1841 provide level translators for a clock input, a reset input, and a bidirectional data IO. The clock and reset inputs (CIN and RIN) are level shift­ed from the controller-side supply rails (DVCCto GND) to the card-side supply rails (VCCto GND). When con­nected to an open-drain controller output, DATA and IO provide bidirectional level translation. All level transla­tion is valid for DVCC≥ VCCor DVCC≤ VCC. The MAX1840/MAX1841 contain internal pull up resistors from DATA to the controller-side supply (DVCC) and from IO to the card-side supply (VCC). For push-pull controller outputs, see the Data Driver section for bidi­rectional data translation.
Data Driver (MAX1841 Only)
When using a microcontroller (µC) without an open-drain output, use the data driver (DDRV) input to send data to the SIM/smart card, while DATA provides the controller­side output for bidirectional data transfer. When not used, connect DDRV to DVCCto reduce total supply cur­rent.
Shutdown Mode
For the MAX1840, drive SHDN low to activate shut­down. Connect SHDN to DVCCor drive high for normal operation. To allow for card insertion and removal, shut­down mode actively pulls CLK, RST, and IO low; it also disconnects the internal 10kpull up resistor from V
CC
to prevent excessive current draw. Shutdown mode reduces the total supply current (I
DVCC
+ I
VCC
) to
0.01µA.
SIM/Smart Card Insertion/Removal
The SIM/smart card specifications require that the card­side pins (V
CC
, CLK, RST, IO) be at ground potential prior to inserting the SIM/smart card. For applications using the MAX1686H (Figure 3), the easiest way to achieve this is by shutting down the MAX1686H or by
driving SHDN (MAX1840 only) low. If specific sequenc­ing is desired, pull IO low by driving either DATA or DDRV (MAX1841 only) low, and pull CLK and RST low by driving CIN and RIN low, respectively.
ESD Protection
As with all Maxim devices, ESD-protection structures on all pins protect against ESDs encountered during han­dling and assembly. For further protection during card insertion and removal, the pins that connect to the card socket (CLK, RST, IO, VCC, and GND) provide protec­tion against ±10kV of ESD. The ESD structures with­stand high ESD in all states: normal operation, shutdown, and power-down. After an ESD event, the MAX1840/MAX1841 continue working without latchup. A 1µF bypass capacitor from VCCto GND is required to exceed ±10kV ESD specifications.
ESD Test Conditions
ESD performance depends on a variety of conditions. Contact Maxim for a reliability report documenting test setup, test methodology, and test results.
Applications Information
SIM/Smart Card Interface
To provide 5V when interfacing with a 5V SIM/smart card, +3V systems require a DC-DC converter. The MAX1686H +5V regulating charge pump for SIM cards provides
Figure 1. MAX1840/MAX1841 Test Circuit
+1.8V
30pF
DV
CC
SHDN*
RIN CIN DDRV* DATA
MAX1840 MAX1841
V
RST
CLK
GND
+1.8V,
CC
IO
30pF
+3.0V, OR +5.0V
30pF 30pF
*
SHDN FOR MAX1840 ONLY; DDRV FOR MAX1841 ONLY.
NOTE: ALL CAPACITANCES INCLUDE CAPACITIVE LOADS OF TEST PROBES AND BOARD LAYOUT.
MAX1840/MAX1841
Low-Voltage SIM/Smart Card
Level Translators in µMAX
_______________________________________________________________________________________ 7
0V/3V/5V for full compatibility with SIM/smart-card specifi­cations. Figure 2 shows the charge pump for SIM card applications. Alternatively, the MAX619 generates a regu­lated 5V from input voltages as low as 2V.
SPI/QSPI/MICROWIRE Interface
The MAX1840/MAX1841 are also useful as 3V/5V level shifters in SPI, QSPI, and MICROWIRE applications (Figure 3). On the slave side, connect CLK to SCLK, RST to CS, and IO to DOUT and DIN. The unidirectional
level shifters transfer chip select and clock signals to the slave device(s), while the bidirectional level shifter transfers data.
___________________Chip Information
TRANSISTOR COUNT: 211
Figure 2. Using MAX1840/MAX1841 and MAX1686/MAX1686H Charge Pump for SIM Card Applications
Figure 3. MAX1840/MAX1841 with SPI/QSPI/MICROWIRE Interfaces
+3.0V
DV
SYSTEM
CONTROLLER
GND
CC
OPTIONAL
OPTIONAL
*
SHDN FOR MAX1840 ONLY; DDRV FOR MAX1841 ONLY.
CXN CXP
IN
MAX1686
MAX1686H
3/5
SHDN
MAX1840 MAX1841
DV
CC
RIN
CIN
DATA
SHDN*
DDRV*
3.0V OR 5.0V
OUT
GND
PGND
V
CC
RST
CLK
IO
GND GND
V
RST
CLK
IO
CC
SIM OR SMART
CARD
+5.0V
DV
SYSTEM
CONTROLLER
GND
CC
OPTIONAL
OPTIONAL
*
SHDN FOR MAX1840 ONLY; DDRV FOR MAX1841 ONLY.
IN
MAX8867 MAX8860
SHDN
DV
CC
RIN
CIN
DATA
SHDN*
DDRV*
MAX1840 MAX1841
OUT
SET
PGND
V
CC
RST
CLK
IO
GND GND
+3.3V
SPI/QSPI/
MICROWIRE
SYSTEM
V
CC
CS
SCLK
DOUT
DIN
MAX1840/MAX1841
Low-Voltage SIM/Smart Card Level Translators in µMAX
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
8 _____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2000 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products.
Note: The MAX1840/MAX1841 do not have an exposed pad.
Packaging Information
Typical Application Circuit
V
CC
SIM OR
SMART CARD
SYSTEM
CONTROLLER
CLK
RST
1µF
GND
GND
CLK
RST
GND
V
CC
DV
CC
DV
CC
MAX1840 MAX1841
SHDN*
OPTIONAL
RIN
CIN
20k 10k
OPTIONAL
DATA
DDRV*
SHDN FOR MAX1840 ONLY; DDRV FOR MAX1841 ONLY.
*
SHUTDOWN
CONTROL
IO
IO
1µF
DV
CC
V
CC
10LUMAX.EPS
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