MAXIM MAX1840, MAX1841 Technical data

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General Description

The MAX1840/MAX1841 subscriber identity module
(SIM)/smart card level translators provide level shifting
and electrostatic discharge (ESD) protection for SIM and
smart card ports. These devices integrate two unidirec­tional level shifters for the reset and clock signals, a bidi­rectional level shifter for the serial data stream, and
±10kV ESD protection on all card contacts.

The MAX1840 includes a SHDN control input to aid
insertion and removal of SIM and smart cards, while the
MAX1841 includes a system-side data driver to support
system controllers without open-drain outputs. The logic
supply voltage range is +1.4V to +5.5V for the “controller
side” and +1.7V to +5.5V for the “card side.” Total sup­ply current is 1.0µA. Both devices automatically shut
down when either power supply is removed. For a com­plete SIM card interface, combine the MAX1840/
MAX1841 with the MAX1686H 0V/3V/5V regulated
charge pump.

The MAX1840/MAX1841 are available in ultra-small
10-pin µMAX packages that are only 1.09mm high and
half the area of an 8-pin SO.

The MAX1840/MAX1841 are compliant with GSM test
specifications 11.11 and 11.12.

Applications

SIM Interface in GSM Cellular Telephones

Smart Card Readers

Logic Level Translation

SPI™/QSPI™/MICROWIRE™ Level Translation

Features

♦ SIM/Smart Card Level Shifting

♦ +1.4V to +5.5V Controller Voltage Range

♦ +1.7V to +5.5V Card Voltage Range

♦ ±10kV ESD Card Socket Protection

♦ Allows Level Translation with DV

CC

≥ V

CC

or

DV

CC

≤ V

CC

♦ Automatically Shuts Down When Either Supply Is

Removed

♦ Card Contacts Actively Pulled Low During

Shutdown

♦ 1µA Total Quiescent Supply Current

♦ 0.01µA Total Shutdown Supply Current

♦ Ultra-Small 10-Pin µMAX Package

♦ Compliant with GSM Test Specifications 11.11

and 11.12

MAX1840/MAX1841

Low-Voltage SIM/Smart Card

Level Translators in µMAX

________________________________________________________________ Maxim Integrated Products 1

Typical Operating Circuit

19-1716; Rev 0; 4/00

PART

MAX1840EUB

MAX1841EUB

-40°C to +85°C

-40°C to +85°C

TEMP. RANGE PIN-PACKAGE

10 µMAX

10 µMAX

Pin Configuration

Ordering Information

SPI and QSPI are trademarks of Motorola, Inc.
MICROWIRE is a trademark of National Semiconductor Corp.

DV

SYSTEM

CONTROLLER

GND

CC

DV

CC

OPTIONAL

OPTIONAL

DV

CC

RIN

MAX1840
MAX1841

CIN

DATA

SHDN*

DDRV*

*

SHDN FOR MAX1840 ONLY;
DDRV FOR MAX1841 ONLY.

CLK

GND GND

V

CC

V

CC

IO

V

RSTRST

CLK

IO

CC

SIM OR
SMART

CARD

TOP VIEW

IO1DATA

10

DV

2

CC

CIN

3

MAX1840

4

5

MAX1841

µMAX

RIN

( ) ARE FOR MAX1841.

9

V

CC

CLK

8

RST

7

GNDSHDN (DDRV)

6

MAX1840/MAX1841

Low-Voltage SIM/Smart Card
Level Translators in µMAX

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(Figure 1, DVCC= +1.8V; VCC= +1.8V, +3.0V, or +5.0V; SHDN = DVCC, CIN = RIN = GND or DVCC, IO = VCC, DATA = DDRV = DVCC,
C

IO

= C

CLK

= C

RST

= C

DATA

= 30pF, TA= -40°C to +85°C, unless otherwise noted. Typical values are at TA= +25°C.) (Note1)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

DVCC, VCCto GND................................................-0.3V to +6.0V

RIN, CIN, DATA, DDRV,

SHDN to GND......................................-0.3V to (DV

CC

+ 0.3V)

RST, CLK, IO to GND .................................-0.3V to (V

CC

+ 0.3V)

Continuous Power Dissipation (T

A

= +70°C)

10-Pin µMAX (derate 5.6mW/°C above +70°C) ...........444mW

Operating Temperature Range ...........................-40°C to +85°C

Storage Temperature Range .............................-65°C to +150°C

Junction Temperature......................................................+150°C

Lead Temperature (soldering, 10s) .................................+300°C

UNITS

DVCCOperating Range DV

CC

1.4 5.5

V

V

CC

Operating Range V

CC

1.7 5.5

V

DVCCOperating Current I

DVCC

CIN static

0.1 0.5

µA

CIN clocked at 1.625MHz from GND to DV

CC

with 50% duty cycle

CONDITIONS

2.5

CIN clocked at 3.25MHz from GND to DV

CC

with 50% duty cycle

5

VCCOperating Current I

VCC

CIN static

0.9 3.0

mA

CIN clocked at 1.625MHz from GND to DV

CC

with 50% duty cycle

0.4

CIN clocked at 3.25MHz from GND to DV

CC

with 50% duty cycle

0.8

Total Shutdown Current I

SHDN

I

OFF

= I

VCC

+ I

DVCC

, SHDN = GND

(MAX1840 only), or DV

CC

= GND

or VCC= GND

0.01 1

µA

Digital Input Low Threshold V

IL

0.2 ✕DV

CC

V

Digital Input High Threshold V

IH

0.7 ✕DV

CC

V

Input Leakage Current

0.01 1

µA

Digital Output Low Level V

OL

I

SINK

= 200µA

0.4

V

Digital Output High Level V

OH

I

SOURCE

= 20µA

0.9 ✕V

CC

V

I

SOURCE

= 200µA

0.8 ✕ VCC

DATA Pullup Resistance R

DATA

Between DATA and DV

CC

13 20 28

kΩ

Input Low Threshold V

IL(DATA)

(Note 2)

0.3

V

Input High Threshold V

IH(DATA)

(Note 3)

DVCC- 0.6

V

Input Low Current I

IL

VCC= 5.0V

1

mA

MIN TYP MAXSYMBOLPARAMETER

Input High Current I

IH

2

µA

POWER SUPPLIES

CIN, RIN, SHDN, DDRV LOGIC INPUTS

CLK, RST OUTPUTS

DATA INPUT/OUTPUT

µA

MAX1840/MAX1841

Low-Voltage SIM/Smart Card

Level Translators in µMAX

_______________________________________________________________________________________ 3

ELECTRICAL CHARACTERISTICS (continued)

(Figure 1, DVCC= +1.8V; VCC= +1.8V, +3.0V, or +5.0V; SHDN = DVCC, CIN = RIN = GND or DVCC, IO = VCC, DATA = DDRV = DVCC,
C

IO

= C

CLK

= C

RST

= C

DATA

= 30pF, TA= -40°C to +85°C, unless otherwise noted. Typical values are at TA= +25°C.) (Note1)

UNITSCONDITIONS MIN TYP MAXSYMBOLPARAMETER

Output Low Level V

OL(DATA)

IO = GND, I

SINK

= 100µA

0.4
V

DVCC= 3.0V, IO = GND, I

SINK

= 200µA

0.4

Output High Level

I

SOURCE

= 10µA

0.7 ✕DV

CC

V

DVCC= 3.0V, I

SOURCE

= 20µA

0.7 ✕DV

CC

V

OH(DATA)

IO Pullup Resistance R

IO

Between IO and V

CC

6.5 10 14

kΩ

Input Low Threshold V

IL(IO)IIL(MAX)

= 1mA (Note 2)

0.3

V

Input High Threshold V

IH(IO)IIH(MAX)

= ±20µA (Note 3)

0.7 ✕V

CC

V

Input Low Current I

IL

1

mA

Input High Current I

IH

20

µA

Output Low Level V

OL(IO)

DATA = GND or DDRV = GND,
I

SINK

= 200µA

0.4

V

Output High Level V

OH(IO)ISOURCE

= 20µA

0.8 ✕V

CC

V

Shutdown Output Levels
(IO, CLK, RST)

I

SINK

= 200µA, SHDN = GND, DATA = CIN =

RIN = DV

CC

(MAX1840 only)

0.4

V

I

SINK

= 200µA, DVCC= GND, SHDN
(MAX1840) = DDRV (MAX1841) = DATA =
CIN = RIN = DV

CC

0.4

V

I

SINK

= 200µA, VCC= GND, SHDN
(MAX1840) = DDRV (MAX1841) = DATA =
CIN = RIN = DV

CC

0.4

V

Maximum CLK Frequency
(Notes 4, 5)

f

CLK

VCC= 2.7V to 5.5V, DVCC= 1.4V to 2.7V

520

MHz

VCC= 1.7V to 3.6V, DVCC= 1.4V to 2.25V

515

IO (INPUT/OUTPUT)

SHUTDOWN OUTPUT LEVELS

TIMING

Note 1: Specifications to -40°C are guaranteed by design, not production tested.
Note 2: V

IL

is defined as the voltage at which the output (DATA/IO) voltage equals 0.5V.

Note 3: V

IH

is defined as the voltage at which the output (DATA/IO) voltage exceeds the input (IO/DATA) voltage by 100mV.

Note 4: Timing specifications are guaranteed by design, not production tested.
Note 5: The maximum CLK frequency is defined as the output duty cycle remaining in the 40% to 60% range when the 50% CIN is

applied. CIN has 5ns rise and fall times; levels are GND to DV

CC

. Input and output levels are measured at 50% of the waveform.