MAX1762/MAX1791
High-Efficiency, 10-Pin µMAX, Step-Down
Controllers for Notebooks
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side switching losses do not usually become an issue
until the input is greater than approximately 15V.
Switching losses in the high-side MOSFET can become
an insidious heat problem when maximum battery voltage is applied, due to the squared term in the CV2f
switching loss equation. If the high-side MOSFET chosen for adequate R
DS(ON)
at low battery voltages
becomes extraordinarily hot when subjected to
V
VP(MAX)
, reconsider your choice of high-side MOS-
FET.
Calculating the power dissipation in Q1 due to switching losses is difficult since it must allow for difficult
quantifying factors that influence the turn-on and turnoff times. These factors include the internal gate resistance, gate charge, threshold voltage, source inductance, and PC board layout characteristics. The following switching loss calculation provides only a very
rough estimate and is no substitute for breadboard
evaluation, preferably including a verification using a
thermocouple mounted on Q1:
where C
RSS
is the reverse transfer capacitance of Q1,
and I
GATE
is the peak gate-drive source/sink current.
For the low-side MOSFET, the worst-case power dissipation always occurs at maximum battery voltage:
The absolute worst case for MOSFET power dissipation
occurs under heavy overloads that are greater than
I
LOAD(MAX)
but are not quite high enough to exceed
the current limit and cause the fault latch to trip. To protect against this possibility, the circuit must be overdesigned to tolerate:
I
LOAD
= I
LIMIT(HIGH)
+ (LIR / 2 ) ✕I
LOAD(MAX)
where I
LIMIT(HIGH)
is the maximum valley current
allowed by the current-limit circuit, including threshold
tolerance and on-resistance variation. This means that
the MOSFET must be very well heatsinked. If short-circuit protection without overload protection is enough, a
normal I
LOAD
value can be used for calculating compo-
nent stresses.
During the period when the high-side switch is off, current circulates from ground to the junction of both FETs
and the inductor. As a consequence, the polarity of the
switching node is negative with respect to ground. If
unchanged, this voltage is approximately 0.7V (a diode
drop) at both transition edges while both switches are
off. In between the edges, the low-side switch conducts; the drop is I
L
✕
R
DS(ON)
. If a Schottky clamp is
connected across the low-side switch, the initial and
final voltage drops is reduced, improving efficiency
slightly.
Choose a Schottky diode (D1) having a forward voltage
low enough to prevent the Q2 MOSFET body diode
from turning on during the dead time. As a general rule,
a diode having a DC current rating equal to 1/3 of the
load current is sufficient. This diode is optional and can
be removed if efficiency isn’t critical.
Applications Issues
Dropout Performance
The output voltage adjust range for continuous-conduction operation is restricted by the nonadjustable 500ns
(max) minimum off-time one-shot. When working with
low input voltages, the duty-factor limit must be calculated using worst-case values for on- and off-times.
Manufacturing tolerances and internal propagation
delays introduce an error to the tONK-factor. Also,
keep in mind that transient response performance of
buck regulators operating close to dropout is poor, and
bulk output capacitance must often be added.
Dropout design example: VIN= 7V (min), V
OUT
= 5V, f
= 300kHz. The required duty cycle is :
The worst-case on-time is:
The maximum IC duty factor based on timing constraints of the MAX1762/MAX1792 is:
which meets the required duty cycle. Remember to
include inductor resistance and MOSFET on-state voltage drops (V
SW
) when doing worst-case dropout duty-
factor calculations.
Fixed Output Voltages
The MAX1762/MAX1791 Dual Mode operation allows
the selection of common voltages without requiring
external components (Figure 9). Connect FB to GND for