Maxim MAX1740EUB Datasheet
For free samples and the latest literature, visit www.maxim-ic.com or phone 1-800-998-8800.
For small orders, phone 1-800-835-8769.
General Description
The MAX1740/MAX1741 subscriber identity module
(SIM)/smart card level translators provide level shifting
and electrostatic discharge (ESD) protection for SIM and
smart card ports. These devices integrate two unidirectional level shifters for the reset and clock signals, a bidirectional level shifter for the serial data stream, and
±10kV ESD protection on all card contacts.
The MAX1740 includes a SHDN control input to aid
insertion and removal of SIM and smart cards, while the
MAX1741 includes a system-side data driver to support
system controllers without open-drain outputs. The logic
supply voltage range is +1.425V to +5.5V for the “controller side” and +2.25V to +5.5V for the “card side.”
Total supply current is 2.5µA max. Both devices automatically shut down when either power supply is removed.
For a complete SIM-card interface, combine the
MAX1740/MAX1741 with the MAX1686H 0V/3V/5V regulated charge pump.
The MAX1740/MAX1741 are available in ultra-small 10pin µMAX packages that are only 1.09mm high and half
the area of an 8-pin SO.
The MAX1740/MAX1741 are compliant with GSM test
specifications 11.11 and 11.12.
Applications
SIM Interface in GSM Cellular Telephones
Smart Card Readers
Logic Level Translation
SPI™/QSPI™/MICROWIRE™ Level Translation
Features
♦ SIM/Smart Card Level Shifting
♦ ±10kV ESD Card Socket Protection
♦ Allows Level Translation with DV
CC
≥ V
CC
or
DV
CC
≤ V
CC
♦ Automatically Shuts Down When Either Supply Is
Removed
♦ Card Contacts Actively Pulled Low During
Shutdown
♦ +1.425V to +5.5V Controller Voltage Range
♦ +2.25V to +5.5V Card Voltage Range
♦ 2.5µA (max) Total Quiescent Supply Current
♦ 0.01µA Total Shutdown Supply Current
♦ Ultra-Small 10-Pin µMAX Package
♦ Compliant with GSM Test Specifications 11.11
and 11.12
MAX1740/MAX1741
SIM/Smart Card Level Translators
in µMAX
________________________________________________________________ Maxim Integrated Products 1
Typical Operating Circuit
19-1458; Rev 0; 1/00
PART
MAX1740EUB
MAX1741EUB
-40°C to +85°C
-40°C to +85°C
TEMP. RANGE PIN-PACKAGE
10 µMAX
10 µMAX
Pin Configuration
Ordering Information
SPI and QSPI are trademarks of Motorola, Inc.
MICROWIRE is a trademark of National Semiconductor Corp.
DV
SYSTEM
CONTROLLER
GND
CC
DV
CC
OPTIONAL
OPTIONAL
DV
CC
RIN
MAX1740
MAX1741
CIN
DATA
SHDN*
DDRV*
*
SHDN FOR MAX1740 ONLY
DDRV FOR MAX1741 ONLY
CLK
GND GND
V
CC
V
CC
IO
V
RSTRST
CLK
IO
CC
SIM OR
SMART
CARD
TOP VIEW
IO1DATA
10
DV
2
CC
CIN
3
MAX1740
RIN
( ) ARE FOR MAX1741.
MAX1741
4
5
µMAX
9
V
CC
CLK
8
RST
7
GNDSHDN (DDRV)
6
MAX1740/MAX1741
SIM/Smart Card Level Translators
in µMAX
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(Figure 1, DVCC= +1.8V, VCC= +3.0V or +5.0V, SHDN = DVCC, CIN = RIN = GND or DVCC, IO = VCC, DATA = DDRV = DVCC,
C
IO
= C
CLK
= C
RST
= C
DATA
= 30pF, TA= 0°C to +85°C, unless otherwise noted. Typical values are at TA= +25°C.)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DVCC, VCCto GND................................................-0.3V to +6.0V
RIN, CIN, DATA, DDRV,
SHDN to GND......................................-0.3V to (DV
CC
+ 0.3V)
RST, CLK, IO to GND ................................-0.3V to (V
CC
+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C)
10-Pin µMAX (derate 5.6mW/°C above +70°C) ..........444mW
Operating Temperature Range ..........................-40°C to +85°C
Storage Temperature Range ............................-65°C to +150°C
Junction Temperature......................................................+150°C
Lead Temperature (soldering, 10s) ................................+300°C
UNITS
DVCCOperating Range DV
CC
1.425 5.5
V
V
CC
Operating Range V
CC
2.25 5.5
V
DVCCOperating Current I
DVCC
CIN static
1
µA
CIN clocked at 1.625MHz from GND to DV
CC
with 50% duty cycle
CONDITIONS
8
CIN clocked at 3.25MHz from GND to DV
CC
with 50% duty cycle
16
VCCOperating Current I
VCC
CIN static
1.5
mA
CIN clocked at 1.625MHz from GND to DV
CC
with 50% duty cycle
0.5
CIN clocked at 3.25MHz from GND to DV
CC
with 50% duty cycle
1
Total Shutdown Current I
SHDN
I
OFF
= I
VCC
+ I
DVCC
, SHDN = GND
(MAX1740 only), or DV
CC
= GND
or VCC= GND
0.01 2
µA
Digital Input Low Threshold V
IL
0.2 · DV
CC
V
Digital Input High Threshold V
IH
0.7 · DV
CC
V
Input Leakage Current
0.01 1
µA
Digital Output Low Level V
OL
I
SINK
= 200µA
0.4
V
Digital Output High Level V
OH
I
SOURCE
= 20µA
0.9 · V
CC
V
I
SOURCE
= 200µA
0.8 · V
CC
DATA Pull-Up Resistance R
DATA
Between DATA and DV
CC
13 20 28
kΩ
Input Low Threshold V
IL(DATA)
(Note 1)
0.3
V
Input High Threshold V
IH(DATA)
(Note 2)
DVCC- 0.6
V
Input Low Current I
IL
VCC= 5.0V
1
mA
MIN TYP MAXSYMBOLPARAMETER
Input High Current I
IH
2
µA
POWER SUPPLIES
CIN, RIN, SHDN, DDRV LOGIC INPUTS
CLK, RST OUTPUTS
DATA INPUT/OUTPUT
µA
MAX1740/MAX1741
SIM/Smart Card Level Translators
in µMAX
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(Figure 1, DVCC= +1.8V, VCC= +3.0V or +5.0V, SHDN = DVCC, CIN = RIN = GND or DVCC, IO = VCC, DATA = DDRV = DVCC,
C
IO
= C
CLK
= C
RST
= C
DATA
= 30pF, TA= 0°C to +85°C, unless otherwise noted. Typical values are at TA= +25°C.)
UNITS
DVCC= 2.7V
DVCC= 2.25V
CONDITIONS
DVCC= 1.7V
DVCC= 1.425V
DVCC= 2.25V
DVCC= 1.7V
DVCC= 1.425V
MIN TYP MAXSYMBOLPARAMETER
Output Low Level V
OL(DATA)
IO = GND, I
SINK
= 100µA
0.4
V
DVCC= 3.0V, IO = GND, I
SINK
= 200µA
0.4
V
Output High Level
I
SOURCE
= 10µA
0.7 · DV
CC
V
DVCC= 3.0V, I
SOURCE
= 20µA
0.7 · DV
CC
V
V
OH(DATA)
IO Pull-Up Resistance R
IO
Between IO and V
CC
6.5 10 14
kΩ
Input Low Threshold V
IL(IO)IIL(MAX)
= 1mA (Note 1)
0.3
V
Input High Threshold V
IH(IO)IIH(MAX)
= ±20µA (Note 2)
0.7 · V
CC
V
Input Low Current I
IL
1
mA
Input High Current I
IH
20
µA
Output Low Level V
OL(IO)
DATA = GND or DDRV = GND,
I
SINK
= 200µA
0.4
V
Output High Level V
OH(IO)ISOURCE
= 20µA
0.8 · V
CC
V
Shutdown Output Levels
(IO, CLK, RST)
I
SINK
= 200µA, SHDN = GND, DATA = CIN =
RIN = DV
CC
(MAX1740 only)
0.4
V
I
SINK
= 200µA, DVCC= GND, SHDN
(MAX1740) = DDRV (MAX1741) = DATA =
CIN = RIN = DV
CC
0.4
V
I
SINK
= 200µA, VCC= GND, SHDN
(MAX1740) = DDRV (MAX1741) = DATA =
CIN = RIN = DV
CC
0.4
V
Maximum CLK Frequency
(Notes 3, 4)
f
CLK
VCC= 2.7V to 5.5V
5
MHz
5
5
3.5
VCC= 2.25V to 3.6V
4
4
3.5
IO INPUT/OUTPUT
SHUTDOWN OUTPUT LEVELS
TIMING
MAX1740/MAX1741
SIM/Smart Card Level Translators
in µMAX
4 _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS
(Figure 1, DVCC= +1.8V, VCC= +3.0V or +5.0V, SHDN = DVCC, CIN = RIN = GND or DVCC, IO = VCC, DATA = DDRV = DVCC,
C
IO
= C
CLK
= C
RST
= C
DATA
= 30pF, TA= -40°C to +85°C, unless otherwise noted.) (Note 5)
UNITS
µAI
DVCC
DVCCOperating Current
µA
DVCCOperating Range DV
CC
1.425 5.5
V
VCCOperating Range V
CC
2.25 5.5
V
I
VCC
VCCOperating Current
CIN static
1
CIN static
1.5
CONDITIONS
Total Shutdown Current I
OFF
I
OFF
= I
VCC
+ I
DVCC
, SHDN = GND
(MAX1740 only), or DV
CC
= GND
or VCC= GND
2
µA
I
SOURCE
= 200µA
0.8 · V
CC
V
IO Pull-Up Resistance R
IO
Between IO and V
CC
6.5 14
Digital Input Low Threshold V
IL
0.2 · DV
CC
V
kΩ
Input Low Threshold V
IL(IO)
Input Leakage Current
1
µA
Digital Output Low Level V
OL
I
SINK
= 200µA
0.4
V
Digital Output High Level V
OH
I
SOURCE
= 20µA
0.9 · V
CC
MIN MAXSYMBOLPARAMETER
DATA Pull-Up Resistance R
DATA
Between DATA and DV
CC
13 28
kΩ
I
IL(MAX)
= 1mA (Note 1)
0.3
Input Low Threshold
V
(Note 1) 0.3 VV
IL(DATA)
Output Low Level
Input High Threshold V
IH(DATA)
(Note 2)
DV
CC
-
0.6
V
Output Low Level V
OL(DATA)
IO = GND, I
SINK
= 100µA
0.4
V
DVCC= 3.0V, IO = GND, I
SINK
= 200µA
0.4
V
Output High Level V
OH(DATA)
I
SOURCE
= 10µA
0.7 · DV
CC
V
DVCC= 3.0V, I
SOURCE
= 20µA
0.7 · DV
CC
V
V
OL(IO)
DATA = GND or DDRV = GND, I
SINK
= 200µA
0.4
V
Input High Threshold V
IH(IO)IIH(MAX)
= ±20µA (Note 2)
0.7 · V
CC
V
Output High Level V
OH(IO)ISOURCE
= 20µA
0.8 · V
CC
V
Digital Input High Threshold V
IH
0.75 · DV
CC
V
Input Low Current I
IL
VCC= 5.0V
1
mA
Input High Current I
IH
2
µA
Input Low Current I
IL
1
mA
Input High Current I
IH
20
µA
POWER SUPPLIES
CIN, RIN, SHDN, DDRV LOGIC INPUTS
CLK, RST OUTPUTS
DATA INPUT/OUTPUT
IO INPUT/OUTPUT
Loading...