MAX17019
High-Input-Voltage Quad-Output Controller
22 ______________________________________________________________________________________
Internal SMPS Transient Response
The load-transient response depends on the overall
output impedance over frequency, and the overall
amplitude and slew rate of the load step. In applications with large, fast load transients (load step > 80% of
full load and slew rate > 10A/μs), the output capacitor’s
high-frequency response—ESL and ESR—needs to be
considered. To prevent the output voltage from spiking
too low under a load-transient event, the ESR is limited
by the following equation (ignoring the sag due to finite
capacitance):
where V
STEP
is the allowed voltage drop, ΔI
LOAD(MAX)
is
the maximum load step, and R
PCB
is the parasitic board
resistance between the load and output capacitor.
The capacitance value dominates the midfrequency
output impedance and dominates the load-transient
response as long as the load transient’s slew rate is
less than two switching cycles. Under these conditions,
the sag and soar voltages depend on the output
capacitance, inductance value, and delays in the transient response. Low inductor values allow the inductor
current to slew faster, replenishing charge removed
from or added to the output filter capacitors by a sudden load step, especially with low differential voltages
across the inductor. The sag voltage (V
SAG
) that occurs
after applying the load current can be estimated by the
following:
where D
MAX
is the maximum duty factor (see the
Electrical Characteristics
table), T is the switching peri-
od (1/f
OSC
), and ΔT equals V
OUT/VIN
x T when in PWM
mode, or L x I
IDLE
/(VIN- V
OUT
) when in pulse-skipping
mode. The amount of overshoot voltage (V
SOAR
) that
occurs after load removal (due to stored inductor energy) can be calculated as:
When using low-capacity ceramic filter capacitors,
capacitor size is usually determined by the capacity
needed to prevent V
SOAR
from causing problems during
load transients. Generally, once enough capacitance is
added to meet the overshoot requirement, undershoot at
the rising load edge is no longer a problem.
Input Capacitor Selection
The input capacitor must meet the ripple current
requirement (I
RMS
) imposed by the switching currents.
The I
RMS
requirements of an individual regulator can be
determined by the following equation:
The worst-case RMS current requirement occurs when
operating with VIN= 2V
OUT
. At this point, the above
equation simplifies to I
RMS
= 0.5 x I
LOAD.
However, the
MAX17019 uses an interleaved fixed-frequency architecture, which helps reduce the overall input RMS current on the INBC input supply.
For the MAX17019 system (INA) supply, nontantalum
chemistries (ceramic, aluminum, or OS-CON) are preferred due to their resistance to inrush surge currents
typical of systems with a mechanical switch or connector
in series with the input. For the MAX17019 INBC input
supply, ceramic capacitors are preferred on input due to
their low parasitic inductance, which helps reduce the
high-frequency ringing on the INBC supply when the
internal MOSFETs are turned off. Choose an input
capacitor that exhibits less than +10°C temperature rise
at the RMS input current for optimal circuit longevity.
BST Capacitors
The boost capacitors (C
BST
) must be selected large
enough to handle the gate charging requirements of
the high-side MOSFETs. For these low-power applications, 0.1μF ceramic capacitors work well.
Regulator A Power-MOSFET Selection
Most of the following MOSFET guidelines focus on the
challenge of obtaining high load-current capability
when using high-voltage (> 20V) AC adapters. Lowcurrent applications usually require less attention.
The high-side MOSFET (NH) must be able to dissipate
the resistive losses plus the switching losses at both
V
IN(MIN)
and V
IN(MAX)
. Ideally, the losses at V
IN(MIN)
should be roughly equal to the losses at V
IN(MAX)
, with
lower losses in between. If the losses at V
IN(MIN)
are
significantly higher, consider increasing the size of NH.
Conversely, if the losses at V
IN(MAX)
are significantly
higher, consider reducing the size of NH. If VINdoes
not vary over a wide range, maximum efficiency is
achieved by selecting a high-side MOSFET (NH) that
has conduction losses equal to the switching losses.
Choose a low-side MOSFET (NL) that has the lowest
possible on-resistance (R
DS(ON)
), comes in a moder-
ate-sized package (i.e., 8-pin SO, DPAK, or D2PAK),