MAXIM MAX17000 Technical data

General Description

The MAX17000 pulse-width modulation (PWM) con­troller provides a complete power solution for notebook
DDR, DDR2, and DDR3 memory. It comprises a step­down controller, a source-sink LDO regulator, and a ref­erence buffer to generate the required VDDQ, VTT, and
VTTR rails.

The VDDQ rail is supplied by a step-down converter
using Maxim’s proprietary Quick-PWM™ controller. The
high-efficiency, constant-on-time PWM controller han­dles wide input/output voltage ratios (low duty-cycle
applications) with ease and provides 100ns response
to load transients while maintaining a relatively constant
switching frequency. The Quick-PWM architecture cir­cumvents the poor load-transient timing problems of
fixed-frequency current-mode PWMs while also avoid­ing the problems caused by widely varying switching
frequencies in conventional constant-on-time and con­stant-off-time PWM schemes. The controller senses the
current to achieve an accurate valley current-limit pro­tection. It is also built in with overvoltage, undervoltage,
and thermal protections. The MAX17000 can be set to
run in three different modes: power-efficient SKIP
mode, low-noise forced-PWM mode, and standby
mode to support memory in notebook computer stand­by operation. The switching frequency is programma­ble from 200kHz to 600kHz to allow small components
and high efficiency. The VDDQ output voltage can be
set to a preset 1.8V or 1.5V, or be adjusted from 1.0V to

2.5V by an external resistor-divider. This output has 1%
accuracy over line-and-load operating range.

The MAX17000 includes a ±2A source-sink LDO regu­lator for the memory termination VTT rail. This VTT regu­lator has a ±5mV deadband that either sources or
sinks, ideal for the fast-changing load burst present in
memory termination applications. This feature also
reduces output capacitance requirements.

The VTTR reference buffer sources and sinks ±3mA,
providing the reference voltage needed by the memory
controller and devices on the memory bus.

The MAX17000 is available in a 24-pin, 4mm x 4mm,
Thin QFN package.

Applications

Notebook Computers

DDR, DDR2, and DDR3 Memory Supplies

SSTL Memory Supplies

Features

o SMPS Regulator (VDDQ)

Quick-PWM with 100ns Load-Step Response
Output Voltages—Preset 1.8V, 1.5V, or

Adjustable 1.0V to 2.5V

1% V

OUT

Accuracy Over Line and Load
26V Maximum Input Voltage Rating
Accurate Valley Current-Limit Protection
200kHz to 600kHz Switching Frequency

o Source/Sink Linear Regulator (VTT)

±2A Peak Source/Sink
Low-Output Capacitance Requirement
Output Voltages-Preset VDDQ/2 or REFIN

Adjustable from 0.5V to 1.5V

o Low Quiescent Current Standby State
o Soft-Start/Soft-Shutdown
o SMPS Power-Good Window Comparator
o VTT Power-Good Window Comparator
o Selectable Overvoltage Protection
o Undervoltage/Thermal Protections
o ±3mA Reference Buffer (VTTR)

MAX17000

Complete DDR2 and DDR3 Memory

Power-Management Solution

________________________________________________________________

Maxim Integrated Products

1

Pin Configuration

Ordering Information

19-4125; Rev 0; 5/08

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.

+

Denotes a lead-free package.

Quick-PWM is a trademark of Maxim Integrated Products, Inc.

PART TEMP RANGE PIN-PACKAGE

MAX17000ETG+ -40°C to +85°C 24 Thin QFN

TOP VIEW

V

PGND1

AGND

SKIP

V

SHDN

19

DD

20

21

22

23

CC

24

1 2

OVP

LX

BST

1718 16 14 13

MAX17000ETG+

PGOOD1

THIN QFN

4mm x 4mm

DH

15

456

3

STDBY

PGOOD2

TONDLCSH

VTTS

VTTR

12

CSL

FB

11

REFIN

10

9

VTTI

VTT

8

PGND2

7

MAX17000

Complete DDR2 and DDR3 Memory
Power-Management Solution

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

ELECTRICAL CHARACTERISTICS

(VIN= 12V, V

CC

= V

DD

= V

SHDN

= V

REFIN

= 5V, V

CSL

= 1.8V, STDBY = SKIP = AGND, TA= 0°C to +85°C, unless otherwise noted.

Typical values are at T

A

= +25°C.) (Note 1)

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

TON to PGND1 .......................................................-0.3V to +28V

V

DD

to PGND1..........................................................-0.3V to +6V

V

CC

to VDD............................................................-0.3V to +0.3V

OVP to AGND ...........................................................-0.3V to +6V

SHDN, STDBY, SKIP to AGND.................................-0.3V to +6V

REFIN, FB, PGOOD1,

PGOOD2 to AGND ................................-0.3V to (V

CC

+ 0.3V)

CSH, CSL to AGND....................................-0.3V to (V

CC

+ 0.3V)

DL to PGND1..............................................-0.3V to (V

DD

+ 0.3V)

BST to PGND1...........................................................-1V to +34V

BST to LX..................................................................-0.3V to +6V

DH to LX....................................................-0.3V to (V

BST

+ 0.3V)
BST to V

DD

.............................................................-0.3V to +26V

VTTI to PGND2 .........................................................-0.3V to +6V

VTT to PGND2 ............................................-0.3V to (V

TTI

+ 0.3V)

VTTS to AGND............................................-0.3V to (V

CC

+ 0.3V)

VTTR to AGND ..........................................-0.3V to (V

CSL

+ 0.3V)

PGND1, PGND2 to AGND.....................................-0.3V to +0.3V

Continuous Power Dissipation (T

A

= +70°C)
24-Pin, 4mm x 4mm Thin QFN

(derated 27.8mW/°C above +70°C) ..........................2222mW

Operating Temperature Range ...........................-40°C to +85°C

Junction Temperature......................................................+150°C

Storage Temperature Range .............................-65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

PWM CONTROLLER

Input Voltage Range

Output Voltage Range V

Load Regulation Error V

Line Regulation Error VDD = 4.5V to 5.5V, VIN = 4.5V to 26V 0.25 %

Soft-Start Ramp Time t

Soft-Stop Ramp Time t

Soft-Stop Threshold 25 mV

On-Time Accuracy (Note 2) t

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

V

CC

SSTART

SSTOP

V

IN

, V

CSL

CSL

ON

DD

VIN = 4.5V to 26V,
SKIP = V

CSH

- V

CC

CSL

Rising edge of SHDN 1.4 2.1 ms
Falling edge of SHDN 2.8 ms

V

= 12V,

IN

= 1.2V

V

CSL

326

4.5 5.5

FB = AGND 1.485 1.500 1.515

FB = V

CC

1.782 1.800 1.818Output Voltage Accuracy V

FB = Adj 0.99 1.000 1.01

1 2.7 V

= 0mV to 18mV, SKIP = V

R

= 96.75kΩ

TON

(600kHz), 167ns nominal

R

= 200kΩ (300kHz),

TON

333ns nominal

= 303.25kΩ

R

TON

(200kHz), 500ns nominal

CC

-15 +15

-10 +10

-15 +15

0.1 %

V

V

%

MAX17000

Complete DDR2 and DDR3 Memory

Power-Management Solution

_______________________________________________________________________________________ 3

ELECTRICAL CHARACTERISTICS (continued)

(VIN= 12V, V

CC

= V

DD

= V

SHDN

= V

REFIN

= 5V, V

CSL

= 1.8V, STDBY = SKIP = AGND, TA= 0°C to +85°C, unless otherwise noted.

Typical values are at T

A

= +25°C.) (Note 1)

Minimum Off-Time t

Quie scent Supply Current (VDD) I

Quie scent Supply Current (VCC) I

Shutdown Supply C urrent

+ VCC)

(V

DD

TON Pin Shutdown Current I

LINEAR REGULATOR (VTT)

VTTI Input Voltage Range V

VTTI Supply Current I
VTTI Shutdown Current SHDN = AGND, TA = +25°C 10 μA

REFIN Input Bias Current VTTI = 2.8V, REFIN = 1.4V, TA = +25°C -50 +50 nA

REFIN Range V

REFIN Disable Threshold

VTT Internal MOSFET

VTT Output-Accuracy
Source Load

VTT Output-Accuracy
Sink Load

VTT Load Regulation -50μA to -1A  I

VTT Line Regulation 1.0V  V

VTT Current Lim it

VTT Current-Limit Soft-Start Time With respect to internal VTT_EN signal 160 μs

VTT Discharge MOSFET OVP = VCC 16 

VTTS Input Current TA = +25°C 0.1 1.0 μA

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

OFF(MIN)

I

CC + IDD

TON

VTTI

REFIN

DD

CC

TTI

(Note 2) 250 350 ns
FB forced above 1.0V, STDBY = AGND or

V

= +25°C

CC, TA

FB forced above 1.0V (SMPS, VTT, and
VTTR blocks); STDBY = V

CC

FB forced above 1.0V (ultra-skip and VTTR
blocks); STDBY = AGND

0.01 1.00 μA

2 4 mA

275 475 μA

SHDN = AGND, TA = +25°C 0.01 5 μA

SHDN = AGND, VIN = 26V, VDD = 0 or 5V,

= +25°C

T

A

0.01 1.00 μA

1.0 2.8 V

VTTI = 2.8V, REFIN = 1.4V, no load 10 50 μA

0.5 1.5 V

V

-

High-side on-resistance
(source, I

= 0.1A)

VTT

Low-side on-resistance (sink, I

V

= 1V,

- 5mV) or

(V

REFIN

/2 - 5mV) to

(V

CSL

VTTS, VTT = VTTS

+ 5mV) or

(V

REFIN

/2 + 5mV) to

(V

CSL

VTTS, VTT = VTTS

 2.8V, I

TTI

REFIN

= +50μA

I

VTT

V

= 0.5V to 1.5V,

REFIN

= +300mA

I

VTT

V

= 1V,

REFIN

= -50μA

I

VTT

V

= 0.5V to 1.5V,

REFIN

I

= -300mA

VTT

 +50μA to +1A 13 17 mV/A

VTT

= ±100mA 1 mV

VTT

CC

0.3

0.12 0.25

= 0.1A) 0.18 0.36

VTT

-5 +5

-5 +5

V

-5

+5

Source 2 4

Sink -4 -2



mV

mV

A

MAX17000

Complete DDR2 and DDR3 Memory
Power-Management Solution

4 _______________________________________________________________________________________

ELECTRICAL CHARACTERISTICS (continued)

(VIN= 12V, V

CC

= V

DD

= V

SHDN

= V

REFIN

= 5V, V

CSL

= 1.8V, STDBY = SKIP = AGND, TA= 0°C to +85°C, unless otherwise noted.

Typical values are at T

A

= +25°C.) (Note 1)

REFERENCE BUFFER (VTTR)

VTTR Output Accuracy (Adj) REFIN to VTTR

VTTR Output Accuracy (Preset) V

VTTR Maximum
Recommended Current

FAULT DETECTION (SMPS)

SMPS OVP and PGOOD1
Upper Trip Threshold

SMPS OVP and PGOOD1
Upper Trip Threshold
Fault-Propagation Delay

SMPS Output Undervoltage
Fault-Propagation Delay

SMPS PGOOD1 Lower Trip
Threshold

PGOOD1 Lower Trip Threshold
Propagat ion De la y

PGOOD1 Output Low Voltage I

PGOOD1 Leakage Current I

TON POR Threshold V

FAULT DETECTION (VTT)

PGOOD2 Upper Trip Threshold Hysteresis = 25mV 8 10 13 %

PGOOD2 Lower Trip Threshold Hysteresis = 25mV -13 -10 -8 %

PGOOD2 Propagation Del ay t

PGOOD2 Fault Latch Delay

PGOOD2 Output Low Voltage I

PGOOD2 Leakage Current I

FAULT DETECTION

Thermal-Shutdown Threshold T

VCC Undervoltage Lockout
Threshold

CSL Discharge MOSFET OVP = V

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

t

OVP

t

UVP

t

PGOOD1

PGOOD1

POR(IN)

PGOOD2

PGOOD2

SHDN

V

UVLO(VCC)

I

= ±1mA -10 +10

VTT

= ±3mA -20 +20

I

VTT

I

= ±1mA -10 +10

/2 to VTTR

CSL

Source/s ink 5 mA

FB forced 25mV above trip threshold 10 μs

Measured at FB, hystere si s = 25mV -12 -15 -18 %

FB forced 50mV below PGOOD1 trip
threshold

= 3mA 0.4 V

SINK

FB = 1V (PGOOD1 high impedance),
PGOOD1 forced to 5V, T

Ri sing edge, PWM disabled below this le vel;
hysteresis = 200mV

VTTS forced 50mV beyond PGOOD2
trip threshold

VTTS forced 50mV beyond PGOOD2
trip threshold

= 3mA 0.4 V

SINK

VTTS = V
PGOOD2 forced to 5V, T

Hysteresis = 15°C160 °C

Rising edge, IC disabled below this le ve l
hysteresis = 200mV

(PGOOD2 high impedance),

REFIN

CC

VTT

= ±3mA -20 +20

I

VTT

12 15 18 %

200 μs

10 μs

= +25°C

A

3.0 V

10 μs

5 ms

= +25°C

A

3.8 4.1 4.4 V

16 

mV

1 μA

1 μA

MAX17000

Complete DDR2 and DDR3 Memory

Power-Management Solution

_______________________________________________________________________________________ 5

ELECTRICAL CHARACTERISTICS (continued)

(VIN= 12V, V

CC

= V

DD

= V

SHDN

= V

REFIN

= 5V, V

CSL

= 1.8V, STDBY = SKIP = AGND, TA= 0°C to +85°C, unless otherwise noted.

Typical values are at T

A

= +25°C.) (Note 1)

)

)

CURRENT LIMIT

Valley Current-Limit Threshold V

Current-Limit Threshold
(Negative)

Current-Limit Threshold
(Zero Crossing)

SMPS GATE DRIVERS

DH Gate Driver On-Resistance R

DL Gate Driver On-Resistance R

DH Gate Driver Source/
Sink Current

DL Gate Driver Source/
Sink Current

Dead Time t

Internal BST Switch
On-Resistance

LX, BST Leakage Current

INPUTS AND OUTPUTS

Logic Input Threshold

Logic Input Current

Input Leakage Current CSH = 0 or VCC, TA = +25°C -1 +1 μA

Input Bias Current CSL = 0 or V

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

V

I

DL(SRC

I

DL(SNK

LIMIT

NEG

V

ZX

DH

DL

I

DH

DEAD

R

BST

V

V

V

CSH

CSH

CSH

- V

- V

- V

CSL

, SKIP = V

CSL

CSL

CC

17 20 25 mV

-23 mV

1mV

BST - LX forced to 5V 1.5 5.0 Ω

DL high 1.5 5.0

DL low 0.6 3.0

DH forced to 2.5V, BST - LX forced to 5V 1 A

DL forced to 2.5V 1

DL forced to 2.5V 3

DL rising, TA = +25°C 10 25

DL falling, TA = +25°C 15 35

I

= 10mA,

BST

= 5V internal design target

V

DD

V

BST

T

= +25°C

A

= 26V, SHDN = AGND,

= V

LX

SHDN, STDBY, SKIP, OVP, rising edge
hysteresis = 300mV/600mV (min/max)

SHDN, STDBY, SKIP = 0 or V

= +25°C

T

A

CC

CC

,

1.30 1.65 2.00 V

-1 +1 μA

4.5 Ω

0.001 20 μA

55 100 μA

Ω

A

ns

MAX17000

Complete DDR2 and DDR3 Memory
Power-Management Solution

6 _______________________________________________________________________________________

ELECTRICAL CHARACTERISTICS

(VIN= 12V, V

CC

= V

DD

= V

SHDN

= V

REFIN

= 5V, V

CSL

= 1.8V, STDBY = SKIP = AGND, TA= -40°C to +85°C, unless otherwise noted.)

(Note 1)

)

PWM CONTROLLER

Input Voltage Range

On-Time Accuracy (Note 2) t

Minimum Off-Time t

Quiescent Supply Current (VCC)I

LINEAR REGULATOR (VTT)

VTTI Input Voltage Range V

VTTI Supply Current I

REFIN Range V

REFIN Disable Threshold

VTT Internal MOSFET

VTT Load Regulation -50μA to -1A ≤ I

PARAMETER SYMBOL CONDITIONS MIN MAX UNITS

V

IN

, V

V

CC

DD

FB = AGND 1.485 1.520

CSL

VIN = 4.5V to 26V,
SKIP = V

CC

FB = V

CC

FB = Adj 0.990 1.020

R

= 96.75kΩ

TON

(600kHz), 167ns
nominal

R

= 200kΩ

TON

(300kHz), 333ns
nominal

= 303.25kΩ

R

TON

ON

V
V

= 12V,

IN

CSL

= 1.2V

(200kHz), 500ns
nominal

OFF(MIN

(Note 2) 350 ns

FB forced above 1.0V (PWM, VTT, and

CC

VTTR blocks); STDBY = V

FB forced above 1.0V (ultra-skip and

CC

VTTR blocks); STDBY = AGND

VTTI

VTTI

REFIN

VTTI = 2.8V, REFIN = 1.4V, no load 50 μA

H i g h- si d e on- r esi stance ( sour ce, I

Low-side on-resistance (sink, I

≤ +50μA to +1A 17 mV/A

VTT

= 0.1A) 0.25

V T T

= 0.1A) 0.36

VTT

326

4.5 5.5

1.782 1.820Output Voltage Accuracy V

V

V

-15 +15

-10 +10

%

-15 +15

4mA

475 μA

1.0 2.8 V

0.5 1.5 V

V

-

CC

0.3

V

Ω

MAX17000

Complete DDR2 and DDR3 Memory

Power-Management Solution

_______________________________________________________________________________________ 7

ELECTRICAL CHARACTERISTICS (continued)

(VIN= 12V, V

CC

= V

DD

= V

SHDN

= V

REFIN

= 5V, V

CSL

= 1.8V, STDBY = SKIP = AGND, TA= -40°C to +85°C, unless otherwise noted.)

(Note 1)

Note 1: Limits are 100% production tested at TA= +25°C. Maximum and minimum limits over temperature are guaranteed by design

and characterization.

Note 2: On-time and off-time specifications are measured from 50% point at the DH pin with LX = GND, V

BST

= 5V, and a 250pF

capacitor connected from DH to LX. Actual in-circuit times might differ due to MOSFET switching speeds.

REFERENCE BUFFER (VTTR)

VTTR Output Accuracy (Adj) REFIN to VTTR

VTTR Output Accuracy (Preset) V

FAULT DETECTION (SMPS)

PGOOD1 Output Low Voltage I

FAULT DETECTION (VTT)

PGOOD2 Output Low Voltage I

FAULT DETECTION

VCC Undervoltage-Lockout
Threshold

CURRENT LIMIT

Valley Current-Limit Threshold V

SMPS GATE DRIVERS

DH Gate Driver On-Resistance R

DL Gate Driver On-Resistance R

Dead Time t

INPUTS AND OUTPUTS

Logic Input Threshold

PARAMETER SYMBOL CONDITIONS MIN MAX UNITS

V

UVLO(VCC)

LIMIT VCSH

DEAD

DH

DL

/2 to VTTR

CSL

=3mA 0.4 V

SINK

=3mA 0.4 V

SINK

Rising edge, IC disabled below this le ve l;
hysteresis = 200mV

- V

CSL

BST - LX forced to 5V 5 

DL high 5

DL low 3

DL ris ing 10

DL fal ling 15

SHDN, STDBY, SKIP OVP, rising edge
hysteresis = 300mV/600mV (min/ma x)

I

= ±1mA -10 +10

VTT

= ±3mA -20 +20

I

VTT

I

= ±1mA -10 +10

VTT

= ±3mA -20 +20

I

VTT

4.0 4.4 V

15 25 mV

1.3 2 V

mV

mV



ns

MAX17000

Complete DDR2 and DDR3 Memory
Power-Management Solution

8 _______________________________________________________________________________________

Typical Operating Characteristics

(MAX17000 Circuit of Figure 1, V

IN

= 12V, VDD= VCC= 5V, SKIP = GND, TA = +25°C, unless otherwise noted.)

SMPS 1.8V EFFICIENCY

vs. LOAD CURRENT

100

STANDBY MODE

90

80

70

60

SKIP MODE

50

EFFICIENCY (%)

40

30

20

10

0.01 10
LOAD CURRENT (A)

SMPS 1.8V OUTPUT VOLTAGE

vs. LOAD CURRENT

1.82

1.81

1.80

OUTPUT VOLTAGE (V)

1.79

1.78

0.001 10

SKIP MODE

PWM MODE

0.1 10.01

LOAD CURRENT (A)

PWM MODE

10.1

VIN = 7V

VIN = 12V

100

STANDBY MODE

90

MAX17000 toc01

80

70

60

50

EFFICIENCY (%)

40

30

20

10

0.01 10

350

300

MAX17000 toc04

250

200

150

100

SWITCHING FREQUENCY (kHz)

50

0

010

SMPS 1.8V EFFICIENCY

vs. LOAD CURRENT

SKIP MODE

PWM MODE

VIN = 12V

10.1

LOAD CURRENT (A)

SMPS SWITCHING FREQUENCY

vs. LOAD CURRENT

VIN = 12V
V

OUT

4682

LOAD CURRENT (A)

= 1.8V

MAX17000 toc02

EFFICIENCY (%)

10.50

MAX17000 toc05

10.25

10.00

CURRENT LIMIT (A)

SMPS 1.8V EFFICIENCY

vs. LOAD CURRENT

100

STANDBY MODE

90

80

70

60

50

SKIP MODE

40

30

20

10

0.01 10

PWM MODE

VIN = 20V

10.1

LOAD CURRENT (A)

MAX17000 toc03

SMPS VALLEY-CURRENT LIMIT

vs. INPUT VOLTAGE

R

= 2m

Ω

SENSE

MAX17000 toc06

9.75

9.50
428

12 16 20 248

INPUT VOLTAGE (V)

NO-LOAD SUPPLY CURRENT

vs. INPUT VOLTAGE

100

PWM MODE, ICC + I

10

SKIP MODE, ICC + I

1

STANDBY MODE, ICC + I

SUPPLY CURRENT (mA)

0.1

STANDBY MODE, I

0.01
428

DD

PWM MODE, I

DD

SKIP MODE, I

IN

12 16 20 248

INPUT VOLTAGE (V)

NO LOAD

MAX17000 toc07

IN

DD

IN

SAMPLE PERCENTAGE (%)

50

40

30

20

10

0

PRESET 1.5V OUTPUT

VOLTAGE DISTRIBUTION

SAMPLE SIZE = 150 +85°C

1.490 1.510

1.500 1.5051.495

OUTPUT VOLTAGE (V)

+25°C

MAX17000 toc08

MAX17000

Complete DDR2 and DDR3 Memory

Power-Management Solution

_______________________________________________________________________________________ 9

Typical Operating Characteristics (continued)

(MAX17000 Circuit of Figure 1, V

IN

= 12V, VDD= VCC= 5V, SKIP = GND, TA = +25°C, unless otherwise noted.)

STARTUP WAVEFORM

(HEAVY LOAD)

SHDN

VDDQ

VTT

VTTR

PGOOD1

I

LX

DL

SHDN : 5V/div
VDDQ : 500mV/div
VTT : 500mV/div
VTTR : 500mV/div

200μs/div

PGOOD1 : 2V/div

: 5A/div

I

LX

DL : 5V/div

STANDBY TRANSITION WAVEFORM

STBY

VDDQ

MAX17000 toc09

= 0.25Ω

R

LOAD

SKIP = GND

MAX17000 toc12

VDDQ

VTTR

VTT

PGOOD2

PGOOD1

SHDN

VDDQ

SHUTDOWN WAVEFORM

(DISCHARGE MODE ENABLED)

DL

I

LX

DL : 5V/div
VDDQ : 2V/div
VTT : 1V/div
VTTR : 1V/div

400μs/div

SMPS LOAD-TRANSIENT RESPONSE

(SKIP MODE)

MAX17000 toc10

PGOOD2 : 5V/div
PGOOD1 : 5V/div
SHDN : 10V/div

: 2A/div

I

LX

MAX17000 toc13

STANDBY TRANSITION WAVEFORM

STBY

VDDQ

VTT

TON

DL

LX

I

LX

STBY : 5V/div
VDDQ : 1V/div
VTT : 1V/div
TON: 10V/div

SMPS LOAD-TRANSIENT RESPONSE

VDDQ

2ms/div

(SKIP MODE)

MAX17000 toc11

DL : 5V/div
LX : 10V/div

: 2A/div

I

LX

MAX17000 toc14

VTT

TON

LX

DL
I

LX

STBY : 5V/div
VDDQ : 2V/div
VTT : 1V/div
TON: 10V/div

I

LOAD

LX

I

LX

VDDQ : 50mV/div
LX : 10V/div

20μs/div

I

LOAD

I

LX

: 5A/div

: 5A/div

200μs/div

LX : 10V/div

: 10A/div

I

LX

DL : 5V/div

I

LOAD

LX

I

LX

VDDQ : 50mV/div
LX : 10V/div

20μs/div

I

LOAD

I

LX

: 5A/div

: 5A/div

MAX17000

Complete DDR2 and DDR3 Memory
Power-Management Solution

10 ______________________________________________________________________________________

Typical Operating Characteristics (continued)

(MAX17000 Circuit of Figure 1, V

IN

= 12V, VDD= VCC= 5V, SKIP = GND, TA = +25°C, unless otherwise noted.)

OUTPUT OVERLOAD WAVEFORM

DL

VDDQ

VTT

VTTR
PGOOD2
PGOOD1

I

LX

DL : 5V/div
VDDQ : 1V/div
VTT : 1V/div
VTTR : 1V/div

400μs/div

VTT SOURCE CURRENT LIMIT

50

SAMPLE SIZE = 150 +85°C

40

30

20

SAMPLE PERCENTAGE (%)

10

0

2.0 4.0

3.0 3.52.5

CURRENT LIMIT (A)

MAX17000 toc15

PGOOD2 : 2V/div
PGOOD1 : 2V/div

: 10A/div

I

LX

+25°C

0.79

0.78

0.77

0.76

0.75

VTT VOLTAGE (V)

0.74

0.73

0.72

-2.0 2.0

50

40

MAX17000 toc18

30

20

SAMPLE PERCENTAGE (%)

10

0

-4.0 -2.0

vs. SOURCE/SINK LOAD CURRENT

VTT VOLTAGE

V

= 18V

TTI

-0.5 0 0.5 1.51.0-1.5 -1.0

LOAD CURRENT (A)

VTT SINK CURRENT LIMIT

SAMPLE SIZE = 150 +85°C

-3.0 -2.5-3.5

CURRENT LIMIT (A)

+25°C

50

40

MAX17000 toc16

30

20

SAMPLE PERCENTAGE (%)

10

0

-15.0 -5.0

DL

MAX17000 toc19

I

LX

VDDQ

VTT

VTTR

PGOOD1
PGOOD2

VTT OFFSET VOLTAGE DISTRIBUTION

AT 300mA LOAD

SAMPLE SIZE = 150 +85°C

-10.0 -7.5-12.5

OFFSET VOLTAGE (mV)

+25°C

VTT OVERLOAD FAULT WAVEFORMS

DL : 5V/div

: 2A/div

I

LX

VDDQ : 2V/div
VTT : 1V/div

(5ms TIMER)

1ms/div

MAX17000 toc20

VTTR : 1V/div
PGOOD1 : 2V/div
PGOOD2 : 2V/div

MAX17000 toc17