MAXIM MAX13045E User Manual

General Description

The MAX13042E–MAX13045E 4-channel, bidirectional
level translators provide the level shifting necessary for
100Mbps data transfer in multivoltage systems. The
MAX13042E–MAX13045E are ideally suited for level
translation in systems with four channels. Externally
applied voltages, VCCand VL, set the logic levels on
either side of the device. Logic signals present on the
VLside of the device appear as a high-voltage logic
signal on the V

CC

side of the device and vice-versa.

The MAX13042E–MAX13045E operate at full speed
with external drivers that source as little as 4mA output
current or larger. Each input/output (I/O) channel is
pulled up to V

CC

or VLby an internal 30µA current
source, allowing the MAX13042E–MAX13045E to be
driven by either push-pull or open-drain drivers.

The MAX13042E–MAX13045E feature an enable (EN)
input that places the devices into a low-power shutdown
mode when driven low. The MAX13042E–MAX13045E
feature an automatic shutdown mode that disables the
part when VCCis less than VL. The state of I/O V

CC_

and

I/O V

L_

during shutdown is chosen by selecting the
appropriate part version. (See the Ordering Information/
Selector Guide).

The MAX13042E–MAX13045E operate with VCCvolt­ages from +2.2V to +3.6V and VLvoltages from +1.62V
to +3.2V, making them ideal for data transfer between
low-voltage ASIC/PLDs and higher voltage systems.
The MAX13042E–MAX13045E are available in 12-bump
UCSP™ (1.54mm x 2.12mm) and 14-pin TDFN (3mm x
3mm) packages, and operate over the extended -40°C
to +85°C temperature range.

Applications

Features

♦ Compatible with 4mA Input Drivers or Larger

♦ 100Mbps Guaranteed Data Rate

♦ Four Bidirectional Channels

♦ Enable Input

♦ ±15kV ESD Protection on I/O V

CC_

Lines

♦ +1.62V ≤ V

L

≤ +3.2V and +2.2V ≤ VCC≤ +3.6V

Supply Voltage Range

♦ 12-Bump UCSP (1.54mm x 2.12mm) and

14-Pin TDFN (3mm x 3mm) Lead-Free Packages

MAX13042E–MAX13045E

1.62V to 3.6V Improved High-Speed LLT

________________________________________________________________ Maxim Integrated Products 1

19-0792; Rev 0; 4/07

For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.

EVALUATION KIT

AVAILABLE

Ordering Information/Selector Guide

Typical Operating Circuit

_

_

Note: All devices operate over the -40°C to +85°C temperature
range.
+Denotes a lead-free package.

*Future product—contact factory for availability.
**EP = Exposed paddle.

Pin Configurations appear at end of data sheet.

UCSP is a trademark of Maxim Integrated Products, Inc.
SPI is a trademark of Motorola, Inc.
MICROWIRE is a trademark of National Semiconductor Corp.

Ordering Information/Selector Guide continued at end of
data sheet.

CMOS Logic-Level
Translation

Low-Voltage ASIC Level
Translation

Cell Phones

SPI™, MICROWIRE™
Level Translation

Portable POS Systems

Portable Communication
Devices

GPS

Telecommunications
Equipment

+1.8V

0.1μF

V

+1.8V

SYSTEM

CONTROLLER

EN

DATA

GND GND GND

4

L

MAX13042E–

MAX13045E

EN
I/O V

L_

V

CC

I/O V

1μF

CC_

0.1μF

+3.3V

SYSTEM

DATA

4

+3.3V

PART

MAX13042EEBC+T 12 UCSP-12 High Impedance High Impedance ADQ B12-3

MAX13042EETD+T 14 TDFN-EP** High Impedance High Impedance ADE T1433-2

PIN­PACKAGE

I/O V

STATE DURING

L

SHUTDOWN

I/O V

STATE DURING

CC

SHUTDOWN

TOP

MARK

PKG CODE

MAX13042E–MAX13045E

1.62V to 3.6V Improved High-Speed LLT

2 _______________________________________________________________________________________

ABSOLUTE MAXIMUM RATINGS

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.

(All voltages referenced to GND.)
V

CC

, VL.....................................................................-0.3V to +4V

I/O V

CC_

..................................................... -0.3V to (VCC+ 0.3V)

I/O V

L_

...........................................................-0.3V to (VL+ 0.3V)

EN.............................................................................-0.3V to +4V

Short-Circuit Duration I/O V

L_

, I/O V

CC_

to GND .......Continuous

Continuous Power Dissipation (T

A

= +70°C)

12-Bump UCSP (derate 6.5mW/°C above +70°C) ......519mW

14-Pin TDFN (derate 24.4mW/°C above +70°C) .......1951mW

Operating Temperature Range ...........................-40°C to +85°C

Storage Temperature Range .............................-65°C to +150°C

Junction Temperature......................................................+150°C

Lead Temperature (soldering, 10s) .................................+300°C

ELECTRICAL CHARACTERISTICS

(VCC= +2.2V to +3.6V, VL= +1.62V to +3.2V, EN = VL, TA= -40°C to +85°C, unless otherwise noted. Typical values are at VCC=
+3.3V, V

L

= +1.8V, and TA= +25°C.) (Notes 1, 2)

POWER SUPPLIES

VL Supply Range V

VCC Supply Range V

Supply Current from V

Supply Current from V

VCC Shutdown Supply Current I

VL Shutdown-Mode Supply
Current

I/O V
Leakage Current

EN Input Leakage Current I

VL - VCC Shutdown Threshold
High

VL - VCC Shutdown Threshold
Low

I/O V
During Shutdown

I/O V
During Shutdown

I/O VL_ Pullup Current I

I/O V

I/O V
Resistance

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

L

CC

CC

L

, I/O VL_ Tri-State

CC_

Pulldown Resistance

CC_

Pulldown Resistance

L_

Pullup Current I

CC_

CC_

DC

to I/O V

L_

I

QVCC

I

QVL

SHDN-VCCTA

I

SHDN-VL

I

LEAK

LEAK_ENTA

V

TH_H

V

TH_L

R

VCC_PD_SD

R

VL_PD_SD

VL_PU_

VCC_PU_

R

IOVL_IOVCC

I/O V

I/O V

= VCC, I/O VL_ = V

CC_

= VCC, I/O VL_ = V

CC_

= +25°C, EN = GND 0.1 1 µA

TA = +25°C, EN = GND 0.1 1

TA = +25°C, EN = VL, VCC = GND 0.1 4

TA = +25°C, EN = GND 0.1 2 µA

= +25°C 1 µA

VCC rising (Note 3) 0 0.1V

VCC falling (Note 3) 0 0.12V

MAX13043E/MAX13045E 10 16.5 23 kΩ

MAX13044E/MAX13045E 10 16.5 23 kΩ

I/O VL_ = GND, I/O V

I/O V

= GND, I/O V

CC_

(Note 4) 3 kΩ

1.62 3.2 V

2.2 3.6 V

L

L

25 µA

10 µA

0.8 V

0.8 V

L

L

= GND 20 65 µA

CC_

= GND 20 65 µA

L_

µA

MAX13042E–MAX13045E

1.62V to 3.6V Improved High-Speed LLT

_______________________________________________________________________________________ 3

ELECTRICAL CHARACTERISTICS (continued)

(VCC= +2.2V to +3.6V, VL= +1.62V to +3.2V, EN = VL, TA= -40°C to +85°C, unless otherwise noted. Typical values are at VCC=
+3.3V, V

L

= +1.8V, and TA= +25°C.) (Notes 1, 2)

ESD PROTECTION

I/O VL_, EN Human Body Model ±2 kV

I/O V

LOGIC LEVELS

I/O VL_ Input-Voltage High
Threshold

I/O VL_ Input-Voltage Low
Threshold

I/O V
Threshold

I/O V
Threshold

EN Input-Voltage-High
Threshold

EN Input-Voltage-Low
Threshold

I/O VL_ Output-Voltage High V

I/O VL_ Output-Voltage Low V

I/O V

I/O V

RISE-/FALL-TIME ACCELERATOR STAGE

Accelerator Pulse Duration

VL Output Accelerator Source
Impedance

VCC Output Accelerator Source
Impedance

VL Output Accelerator Sink
Impedance

VCC Output Accelerator Sink
Impedance

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

CC_

Input-Voltage High

CC_

Input-Voltage Low

CC_

Output-Voltage High V

CC_

Output-Voltage Low V

CC_

V

IHL

V

V

IHC

V

ILC

V

V

OHL

OLL

OHC

OLC

ILL

IH

IL

Human Body Model, C

IEC 61000-4-2 Air-Gap Discharge,

= 1µF

C

VCC

IEC 61000-4-2 Contact Discharge,

= 1µF

C

VCC

(Note 5) VL - 0.2 V

(Note 5) 0.15 V

(Note 5)

(Note 5) 0.2 V

I/O VL_ source current = 20µA 2/3 V

I/O V

si nk cur r ent = 20µA, I/O V

L _

I/O V

I/O V
I/O V

source current = 20µA 2/3 V

CC_

si nk cur r ent = 20µA,

C C _

< 0.15V

L _

= 1µF ±15

VCC

V

CC

0.4

VL - 0.4 V

< 0.2V 1/3 V

C C _

CC

±15

±8

-

0.4 V

L

L

1/3 V

CC

On falling edge 3.5

On rising edge 3.5

VL = 1.62V 24

= 3.2V 11

V

L

VCC = 2.2V 13

= 3.6V 9

V

CC

VL = 1.62V 14

= 3.2V 10

V

L

VCC = 2.2V 11

= 3.6V 9

V

CC

kV

V

V

V

V

V

ns

Ω

Ω

Ω

Ω

MAX13042E–MAX13045E

1.62V to 3.6V Improved High-Speed LLT

4 _______________________________________________________________________________________

TIMING CHARACTERISTICS

(+2.2V ≤ VCC≤ +3.6V, +1.62V ≤ VL≤ +3.2V; C

IOVL_

≤ 15pF, C

IOVCC_

≤ 10pF; R

SOURCE

< 150Ω, rise/fall time < 3ns, EN = VL,

T

A

= -40°C to +85°C, unless otherwise noted. Typical values are at VCC= +3.3V, VL= +1.8V, and TA= +25°C.) (Notes 1, 2)

Note 1: All units are 100% production tested at T

A

= +25°C. Limits over the operating temperature range are guaranteed by

correlation and design and not production tested.

Note 2: V

L

must be less than or equal to VCCduring normal operation. However, VLcan be greater than VCCduring startup and

shutdown conditions.

Note 3: When V

CC

is below VLby more than the VL- VCCshutdown threshold, the device turns off its pullup generators and the I/Os

enter their respective shutdown states.

Note 4: Guaranteed by design.
Note 5: Input thresholds are referenced to the boost circuit.

Typical Operating Characteristics

(VCC= 3.3V, VL= 1.8V, C

IOVCC_

= 10pF, C

IOVL_

= 15pF, R

SOURCE

= 150Ω, data rate = 100Mbps, push-pull driver, TA= +25°C,

unless otherwise noted.)

350

360

380

370

390

400

2.2 2.62.4 2.8 3.0 3.2

VL SUPPLY CURRENT vs. VCC SUPPLY

VOLTAGE (DRIVING ONE I/O V

L_

)

MAX13042E toc01

VCC SUPPLY VOLTAGE (V)

V

L

SUPPLY CURRENT (μA)

340

330

320

310

300

3.4 3.6

0

2

6

4

8

10

1.6 2.42.0 2.8 3.2

VL SUPPLY CURRENT vs. VL SUPPLY

VOLTAGE (DRIVING ONE I/O V

CC_

)

MAX13042E toc02

VL SUPPLY VOLTAGE (V)

V

L

SUPPLY CURRENT (mA)

VCC = 3.6V

0

3

9

6

12

15

2.2 2.8 3.0 3.2

VCC SUPPLY CURRENT vs. VCC SUPPLY

VOLTAGE (DRIVING ONE I/O V

L_

)

MAX13042E toc03

VL SUPPLY VOLTAGE (V)

V

CC

SUPPLY CURRENT (mA)

2.4

2.6 3.4

3.6

PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS

I/O V

I/O V

I/O VL_ Rise Time t

I/O VL_ Fall Time t

Propagation Delay
(Driving I/O V

Propagation Delay
(Driving I/O V

Channel-to-Channel Skew t

Propagation Delay From I/O V
to I/O V

Propagation Delay From I/O V
to I/O VL_ after EN

Rise Time t

CC_

Fall Time t

CC_

)

L_

)

CC_

L_

CC_

CC_

after EN

RVCC

FVCC

RVL

FVL

t

PVL-VCC

t

PVCC-VL

SKEW

t

EN-VCC

t

EN-VL

Maximum Data Rate Push-pull operation 100 Mbps

Figure 1 2.5 ns

Figure 1 2.5 ns

Figure 2 2.5 ns

Figure 2 2.5 ns

Figure 1 6.5 ns

Figure 2 6.5 ns

(Note 4) 0.7 ns

Figure 3 5 µs

Figure 3 5 µs

MAX13042E–MAX13045E

1.62V to 3.6V Improved High-Speed LLT

_______________________________________________________________________________________ 5

Typical Operating Characteristics (continued)

(VCC= 3.3V, VL= 1.8V, C

IOVCC_

= 10pF, C

IOVL_

= 15pF, R

SOURCE

= 150Ω, data rate = 100Mbps, push-pull driver, TA= +25°C,

unless otherwise noted.)

VCC SUPPLY CURRENT vs. VL SUPPLY VOLTAGE

(DRIVING ONE I/O V

CC

_)

VL SUPPLY VOLTAGE (V)

V

CC

SUPPLY CURRENT (mA)

MAX13042E toc04

1.6 2.0 2.4 2.8 3.2

0

2

4

6

8

10

VCC = 3.6V

SUPPLY CURRENT vs. TEMPERATURE

(DRIVING ONE I/O V

CC_

)

TEMPERATURE (°C)

SUPPLY CURRENT (mA)

MAX13042E toc05

-40 -15 10 35 60 85

0

1

2

3

4

5

6

7

I

VCC

I

VL

0

2

6

4

8

10

-40 35

SUPPLY CURRENT vs. TEMPERATURE

(DRIVING ONE I/O V

L_

)

MAX13042E toc06

TEMPERATURE (°C)

SUPPLY CURRENT (mA)

I

VCC

-15

60

85

I

VL

9

1

3

5

7

10

CAPACITIVE LOAD (pF)

V

L

SUPPLY CURRENT (μA)

MAX13042E toc07

10 15 20 25 30 35 40

0

1000

2000

3000

4000

5000

VL SUPPLY CURRENT vs. CAPACITIVE

LOAD ON I/O V

L_

(DRIVING ONE I/O V

CC_

)

V

CC

SUPPLY CURRENT vs. CAPACITIVE

LOAD ON I/O V

CC_

(DRIVING ONE I/O VL_)

CAPACITIVE LOAD (pF)

V

CC

SUPPLY CURRENT (mA)

MAX13042E toc08

10 15 20 25 30 35 40

0

2

4

6

8

10

12

14

16

CAPACITIVE LOAD (pF)

RISE/FALL TIME (ns)

MAX13042E toc09

10 15 20 25 30 35 40

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

RISE/FALL TIME vs. CAPACITIVE LOAD ON

I/O V

CC_

(DRIVING I/O VL_)

t

RVCC

t

FVCC

CAPACITIVE LOAD (pF)

RISE/FALL TIME (ns)

MAX13042E toc10

10 15 20 25 30 35 40

0

0.5

1.0

1.5

2.0

2.5

3.0

RISE/FALL TIME vs. CAPACITIVE LOAD ON

I/O V

L_

(DRIVING I/O V

CC_

)

t

FVL

t

RVL

PROPAGATION DELAY vs. CAPACITIVE

LOAD ON I/O V

CC_

(DRIVING I/O VL_)

CAPACITIVE LOAD (pF)

PROPAGATION DELAY (ns)

MAX13042E toc11

10 15 20 25 30 35 40

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

t

PHL

t

PLH

2.0

3.5

3.0

4.5

5.0

10 25 30

PROPAGATION DELAY vs. CAPACITIVE

LOAD ON I/O V

L_

(DRIVING I/O V

CC_

)

MAX13042E toc12

CAPACITIVE LOAD (pF)

PROPAGATION DELAY (ns)

15

20 35

40

4.0

2.5

1.5

1.0

0.5

0

t

PHL

t

PLH