MAXIM MAX1185 Technical data

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General Description
The MAX1185 is a 3V, dual 10-bit analog-to-digital con­verter (ADC) featuring fully-differential wideband track­and-hold (T/H) inputs, driving two pipelined, nine-stage ADCs. The MAX1185 is optimized for low-power, high dynamic performance applications in imaging, instru­mentation, and digital communication applications. This ADC operates from a single 2.7V to 3.6V supply, con­suming only 105mW while delivering a typical signal-to­noise ratio (SNR) of 59.5dB at an input frequency of
7.5MHz and a sampling rate of 20Msps. Digital outputs A and B are updated alternating on the rising (CHA) and falling (CHB) edge of the clock. The T/H driven input stages incorporate 400MHz (-3dB) input ampli­fiers. The converters may also be operated with single­ended inputs. In addition to low operating power, the MAX1185 features a 2.8mA sleep mode as well as a 1µA power-down mode to conserve power during idle periods.
An internal 2.048V precision bandgap reference sets the full-scale range of the ADC. A flexible reference structure allows the use of this internal or an externally derived reference, if desired for applications requiring increased accuracy or a different input voltage range.
The MAX1185 features parallel, multiplexed, CMOS­compatible three-state outputs. The digital output for­mat can be set to two’s complement or straight offset binary through a single control pin. The device provides for a separate output power supply of 1.7V to 3.6V for flexible interfacing. The MAX1185 is available in a 7mm x 7mm, 48-pin TQFP package, and is specified for the extended industrial (-40°C to +85°C) temperature range.
Pin-compatible, nonmultiplexed. high-speed versions of the MAX1185 are also available. Refer to the MAX1180 data sheet for 105Msps, the MAX1181 data sheet for 80Msps, the MAX1182 data sheet for 65Msps, the MAX1183 data sheet for 40Msps, and the MAX1184 data sheet for 20Msps.
Applications
High Resolution Imaging
I/Q Channel Digitization
Multichannel IF Sampling
Instrumentation
Video Application
Ultrasound
Features
o Single 3V Operation o Excellent Dynamic Performance:
59.5dB SNR at f
IN
= 7.5MHz
74dB SFDR at f
IN
= 7.5MHz
o Low Power:
35mA (Normal Operation)
2.8mA (Sleep Mode) 1µA (Shutdown Mode)
o 0.02dB Gain and 0.25° Phase Matching o Wide ±1Vp-p Differential Analog Input Voltage
Range
o 400MHz, -3dB Input Bandwidth o On-Chip 2.048V Precision Bandgap Reference o Single 10-Bit Bus for Multiplexed, Digital Outputs o User-Selectable Output Format—Two’s
Complement or Offset Binary
o 48-Pin TQFP Package with Exposed Pad for
Improved Thermal Dissipation
MAX1185
Dual 10-Bit, 20Msps, 3V, Low-Power ADC with
Internal Reference and Multiplexed Parallel Outputs
________________________________________________________________
Maxim Integrated Products
1
Pin Configuration
19-2175; Rev 3; 5/11
Ordering Information
*
EP = Exposed pad.
+
Denotes a lead(Pb)-free/RoHS-compliant package.
/V denotes an automotive qualified part.
Pin-Compatible Versions table at end of data sheet.
PART
TEMP
RANGE
MAX1185ECM -40°C to +85°C 48 TQFP-EP*
MAX1185ECM+ -40°C to +85°C 48 TQFP-EP*
MAX1185ECM/V+ -40°C to +85°C 48 TQFP-EP*
PIN-PACKAGE
REFN
REFP
REFIN
REFOUT
D9A/B
D8A/B
D7A/B
D6A/B
D5A/B
D4A/B
D3A/B
D2A/B
4847464544434241403938
COM
1
V
2
DD
GND
3
INA+
4
INA-
5
V
6
DD
GND
7
INB-
8
INB+
9
GND
10
V
11
DD
CLK
12
1314151617181920212223
GND
NOTE: THE PIN 1 INDICATOR FOR LEAD-FREE PACKAGES IS REPLACED BY A "+" SIGN.
EP
DDVDD
V
MAX1185
PD
T/B
GND
SLEEP
48 TQFP-EP
OE
N.C.
N.C.
N.C.
37
24
N.C.
36
D1A/B D0A/B
35
OGND
34
OV
33
DD
OV
32
DD
OGND
31
A/B
30
N.C.
29
N.C.
28
N.C.
27
N.C.
26
N.C.
25
MAX1185
Dual 10-Bit, 20Msps, 3V, Low-Power ADC with Internal Reference and Multiplexed Parallel Outputs
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(VDD= 3V, OVDD= 2.5V, 0.1µF and 1µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through a 10kΩ resistor, V
IN
= 2Vp-p (differential w.r.t. COM), CL= 10pF at digital outputs (Note 1), f
CLK
= 20MHz, TA= T
MIN
to T
MAX
, unless
otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
VDD, OVDDto GND ...............................................-0.3V to +3.6V
OGND to GND.......................................................-0.3V to +0.3V
INA+, INA-, INB+, INB- to GND ...............................-0.3V to V
DD
REFIN, REFOUT, REFP, REFN, COM,
CLK to GND............................................-0.3V to (V
DD
+ 0.3V)
OE, PD, SLEEP, T/B, D9A/B–D0A/B,
A/B to OGND .......................................-0.3V to (OV
DD
+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C) 48-Pin TQFP-EP (derate 30.4mW/°C
above +70°C)............................................................2430mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow)
Lead(Pb)-free..............................................................+260°C
Containing lead(Pb) ....................................................+240°C
DC ACCURACY
Resolution 10 Bits
Integral Nonlinearity INL fIN = 7.5MHz ±0.5 ±1.5 LSB
Differential Nonlinearity DNL fIN = 7.5MHz, no missing codes guaranteed ±0.25 ±1.0 LSB
Offset Error < ±1 ±1.9 % FS
Gain Error 0 ±2% FS
ANALOG INPUT
Differential Input Voltage Range
Common-Mode Input Voltage Range
Input Resistance R
Input Capacitance C
CONVERSION RATE
Maximum Clock Frequency f
Data Latency
DYNAMIC CHARACTERISTICS
Signal-to-Noise Ratio (Note 3)
Signal-to-Noise and Distortion (Note 3)
Spurious-Free Dynamic Range (Note 3)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
V
DIFF
V
CLK
SNR
SINAD
SFDR
Differential or single-ended inputs ±1.0 V
CM
Switched capacitor load 100 kΩ
IN
IN
CHA 5
CHB 5.5
f
INA or B
f
INA or B
f
INA or B
f
INA or B
f
INA or B
f
INA or B
= 7.5MHz, TA = +25°C 57.3 59.5
= 12MHz 59.4
= 7.5MHz, TA = +25°C 57 59.4
= 12MHz 59.2
= 7.5MHz, TA = +25°C 64 74
= 12MHz 72
20 MHz
VDD/2
± 0.5
5pF
V
Clock
cycles
dB
dB
dBc
MAX1185
Dual 10-Bit, 20Msps, 3V, Low-Power ADC with
Internal Reference and Multiplexed Parallel Outputs
_______________________________________________________________________________________ 3
ELECTRICAL CHARACTERISTICS (continued)
(VDD= 3V, OVDD= 2.5V, 0.1µF and 1µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through a 10kΩ resistor, V
IN
= 2Vp-p (differential w.r.t. COM), CL= 10pF at digital outputs (Note 1), f
CLK
= 20MHz, TA= T
MIN
to T
MAX
, unless
otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
Total Harmonic Distortion (First 4 Harmonics) (Note 3)
Third-Harmonic Distortion (Note 3)
Intermodulation Distortion IMD
Small-Signal Bandwidth Input at -20dBFS, differential inputs 500 MHz
Full-Power Bandwidth FPBW Input at -0.5dBFS, differential inputs 400 MHz
Aperture Delay t
Aperture Jitter t
Overdrive Recovery Time For 1.5x full-scale input 2 ns
Differential Gain ±1%
Differential Phase ±0.25 D egr ees
Output Noise INA+ = INA- = INB+ = INB- = COM 0.2 LSB
INTERNAL REFERENCE
Reference Output Voltage REFOUT
Reference Temperature Coefficient
Load Regulation 1.25 mV/mA
BUFFERED EXTERNAL REFERENCE (V
REFIN Input Voltage V
Positive Reference Output Voltage
Negative Reference Output Voltage
Differential Reference Output Voltage Range
REFIN Resistance R
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
f
REF
REFIN
INA or B
f
INA or B
f
INA or B
f
INA or B
f
INA or B
f
I N A o r B
= 2.048V)
REF
THD
HD3
AD
AJ
TC
REFIN
V
REFP
V
REFN
ΔVREF ΔV
REFIN
= 7.5MHz, TA = +25°C -72 -64
= 12MHz -71
= 7.5MHz -74
= 12MHz -72
= 11.9852MHz at -6.5dBFS, = 12.8934M H z at - 6.5d BFS ( N ote 4)
= V
REFP
- V
REFN
-76 dBc
1ns
2ps
2.048 ±3%
60 ppm/°C
2.048 V
2.012 V
0.988 V
0.95 1.024 1.10 V
> 50 MΩ
dBc
dBc
RMS
RMS
V
MAX1185
Dual 10-Bit, 20Msps, 3V, Low-Power ADC with Internal Reference and Multiplexed Parallel Outputs
4 _______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS (continued)
(VDD= 3V, OVDD= 2.5V, 0.1µF and 1µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through a 10kΩ resistor, V
IN
= 2Vp-p (differential w.r.t. COM), CL= 10pF at digital outputs (Note 1), f
CLK
= 20MHz, TA= T
MIN
to T
MAX
, unless
otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
Maximum REFP, COM Source Current
Maximum REFP, COM Sink Current
Maximum REFN Source Current I
Maximum REFN Sink Current I
UNBUFFERED EXTERNAL REFERENCE (V
REFP, REFN Input Resistance
Differential Reference Input Voltage
COM Input Voltage V
REFP Input Voltage V
REFN Input Voltage V
DIGITAL INPUTS (CLK, PD, OE, SLEEP, T/B)
Input High Threshold V
Input Low Threshold V
Input Hysteresis V
Input Leakage
Input Capacitance C
DIGITAL OUTPUTS (D0A/B–D9A/B, A/B)
Output-Voltage Low V
Output-Voltage High V
Three-State Leakage Current I
Three-State Output Capacitance C
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
I
SOURCE
I
SINK
SOURCE
SINK
R
REFP
R
REFN
ΔV
REF
COM
REFP
REFN
IH
IL
HYST
I
IH
I
IL
IN
OLISINK
OH
LEAK
OUT
= AGND, reference voltage applied to REFP, REFN, and COM)
REFIN
,
Measured between REFP and COM, and REFN and COM
ΔV
= V
REF
CLK
PD, OE, SLEEP, T/B
REFP
- V
REFN
0.8
x V
0.8
x OV
DD
CLK
PD, OE, SLEEP, T/B
VIH = OV
DD
or V
(CLK) ±5
DD
VIL = 0 ±5
= -200µA 0.2 V
OV
I
SOURCE
OE = OV OE = OV
= 200µA
DD
DD
DD
- 0.2
5mA
-250 µA
250 µA
-5 mA
4kΩ
1.024
±10%
VDD/2 ±10%
V
+
COM
ΔV
/2
REF
V
-
COM
/2
ΔV
REF
DD
0.2
x V
DD
0.2
x OV
DD
0.1 V
5pF
±10 µA
5pF
V
V
V
V
V
V
µA
V
MAX1185
Dual 10-Bit, 20Msps, 3V, Low-Power ADC with
Internal Reference and Multiplexed Parallel Outputs
_______________________________________________________________________________________ 5
ELECTRICAL CHARACTERISTICS (continued)
(VDD= 3V, OVDD= 2.5V, 0.1µF and 1µF capacitors from REFP, REFN, and COM to GND; REFOUT connected to REFIN through a 10kΩ resistor, V
IN
= 2Vp-p (differential w.r.t. COM), CL= 10pF at digital outputs (Note 1), f
CLK
= 20MHz, TA= T
MIN
to T
MAX
, unless
otherwise noted. Typical values are at T
A
= +25°C.) (Note 2)
Note 1: Equivalent dynamic performance is obtainable over full OVDDrange with reduced CL. Note 2: Specifications at +25°C are guaranteed by production test and < +25°C are guaranteed by design and characterization. Note 3: SNR, SINAD, THD, SFDR, and HD3 are based on an analog input voltage of -0.5dBFS referenced to a ±1.024V full-scale
input voltage range.
Note 4: Intermodulation distortion is the total power of the intermodulation products relative to the individual carrier. This number is
6dB or better, if referenced to the two-tone envelope.
Note 5: Digital outputs settle to V
IH
, VIL. Parameter guaranteed by design.
Note 6: With REFIN driven externally, REFP, COM, and REFN are left unconnected while powered down.
POWER REQUIREMENTS
Analog Supply Voltage Range V
Output Supply Voltage Range OV
Analog Supply Current I
Output Supply Current I
Power Dissipation PDISS
Power-Supply Rejection Ratio PSRR
TIMING CHARACTERISTICS
CLK Rise to CHA Output Data Valid
CLK Fall to CHB Output Data Valid
Clock Rise/Fall to A/B Rise/Fall Time
Output Enable Time t
Output Disable Time t
CLK Pulse Width High t
CLK Pulse Width Low t
Wake-Up Time t
CHANNEL-TO-CHANNEL MATCHING
Crosstalk f
Gain Matching f
Phase Matching f
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
DD
DD
Operating, f
VDD
OVDD
t
DOA
t
DOB
t
DA/B
ENABLE
DISABLE
CH
WAKE
Sleep mode 2.8 Shutdown, clock idle, PD = OE = OV
Operating, CL = 15pF, f
INA or B
Sleep mode 100 Shutdown, clock idle, PD = OE = OV
Operating, f
Sleep mode 8.4 Shutdown, clock idle, PD = OE = OV
Offset ±0.2 mV/V
Gain ±0.1 %/V
Figure 3 (Note 5) 5 8 ns
Figure 3 (Note 5) 5 8 ns
Figure 4 10 ns
Figure 4 1.5 ns
Figure 3, clock period: 50ns
Figure 3, clock period: 50ns
CL
Wake-up from sleep mode (Note 6) 0.51
Wake-up from shutdown (Note 6) 1.5
INA or B
INA or B
INA or B
= 7.5MHz at -0.5dBFS 35 50
INA or B
DD
= 7.5MHz at -0.5dBFS
DD
= 7.5MHz at -0.5dBFS 105 150
INA or B
DD
= 7.5MHz at -0.5dBFS -70 dB
= 7.5MHz at -0.5dBFS 0.02 ±0.2 dB
= 7.5MHz at -0.5dBFS 0.25 D eg r ees
2.7 3.0 3.6 V
1.7 2.5 3.6 V
11A
9mA
210
34W
6ns
25 ± 7.5
25 ± 7.5
mA
µA
mW
ns
ns
µs
MAX1185
Dual 10-Bit, 20Msps, 3V, Low-Power ADC with Internal Reference and Multiplexed Parallel Outputs
6 _______________________________________________________________________________________
Typical Operating Characteristics
(VDD= 3V, OVDD= 2.5V, V
REFIN
= 2.048V, differential input at -0.5dBFS, f
CLK
= 20MHz, CL≈ 10pF, TA= +25°C, unless otherwise noted.)
-100
-80
-90
-60
-70
-40
-50
-30
-10
-20
0
023415679810
FFT PLOT CHA (DIFFERENTIAL INPUT,
8192-POINT DATA RECORD)
MAX1185 toc01
ANALOG INPUT FREQUENCY (MHz)
AMPLITUDE (dB)
CHA
f
CLK
= 20.0005678MHz
f
INA
= 5.9742906MHz
f
INB
= 7.5343935MHz
A
INA
= -0.525dBFS
HD3
HD2
-100
-80
-90
-60
-70
-40
-50
-30
-10
-20
0
0 23415679810
FFT PLOT CHB (DIFFERENTIAL INPUT,
8192-POINT DATA RECORD)
MAX1185 toc02
ANALOG INPUT FREQUENCY (MHz)
AMPLITUDE (dB)
CHB
f
CLK
= 20.0005678MHz
f
INA
= 5.9742906MHz
f
INB
= 7.5243935MHz
A
INA
= -0.462dBFS
HD3
HD2
-100
-80
-90
-60
-70
-40
-50
-30
-10
-20
0
0 2341 567 9810
FFT PLOT CHA (DIFFERENTIAL INPUT,
8192-POINT DATA RECORD)
MAX1185 toc03
ANALOG INPUT FREQUENCY (MHz)
AMPLITUDE (dB)
CHA
f
CLK
= 20.0005678MHz
f
INA
= 7.5343935MHz
f
INB
= 11.9852035MHz
A
INA
= -0.489dBFS
HD3
HD2
-100
-80
-90
-60
-70
-40
-50
-30
-10
-20
0
02341 567 9810
FFT PLOT CHB (DIFFERENTIAL INPUT,
8192-POINT DATA RECORD)
MAX1185 toc04
ANALOG INPUT FREQUENCY (MHz)
AMPLITUDE (dB)
CHB
f
CLK
= 20.0005678MHz
f
INA
= 7.5343935MHz
f
INB
= 11.9852035MHz
A
INA
= -0.471dBFS
HD3
HD2
-100
-80
-90
-60
-70
-40
-50
-30
-10
-20
0
0 2341 567 9810
TWO-TONE IMD PLOT (DIFFERENTIAL INPUT,
8192-POINT DATA RECORD)
MAX1185 toc05
ANALOG INPUT FREQUENCY (MHz)
AMPLITUDE (dB)
IM2
IM3
IM3
f
CLK
= 20.0005678MHz
f
IN1
= 11.9852035MHz
f
IN2
= 12.8934324MHz
A
IN
= -6.5dBFS
f
IN2
f
IN1
57
56
55
59
58
60
61
0 5 10 15 20 25 30 35 40 45
SIGNAL-TO-NOISE RATIO
vs. ANALOG INPUT FREQUENCY
MAX1185 toc06
ANALOG INPUT FREQUENCY (MHz)
SNR (dB)
CHA
CHB
62
60
58
54
56
0 5 10 15 20 25 30 35 40 45
SIGNAL-TO-NOISE AND DISTORTION
vs. ANALOG INPUT FREQUENCY
MAX1185 toc07
ANALOG INPUT FREQUENCY (MHz)
SINAD (dB)
CHB
CHA
-72
-76
-80
-68
-64
-60
TOTAL HARMONIC DISTORTION vs. ANALOG INPUT FREQUENCY
MAX1185 toc08
ANALOG INPUT FREQUENCY (MHz)
THD (dBc)
0 5 10 15 20 25 30 35 40 45
CHA
CHB
60
64
72
68
76
80
SPURIOUS-FREE DYNAMIC RANGE
vs. ANALOG INPUT FREQUENCY
MAX1185 toc09
ANALOG INPUT FREQUENCY (MHz)
SFDR (dBc)
0 5 10 15 20 25 30 35 40 45
CHA
CHB
MAX1185
Dual 10-Bit, 20Msps, 3V, Low-Power ADC with
Internal Reference and Multiplexed Parallel Outputs
_______________________________________________________________________________________
7
Typical Operating Characteristics (continued)
(VDD= 3V, OVDD= 2.5V, V
REFIN
= 2.048V, differential input at -0.5dBFS, f
CLK
= 20MHz, CL≈ 10pF, TA= +25°C, unless otherwise noted
-8
-4
-6
0
-2
4
2
6
1 10 100 1000
FULL-POWER INPUT BANDWIDTH
vs. ANALOG INPUT FREQUENCY, SINGLE-ENDED
MAX1185 toc10
ANALOG INPUT FREQUENCY (MHz)
GAIN (dB)
-8
-4
-6
0
-2
4
2
6
1 10 100 1000
SMALL-SIGNAL INPUT BANDWIDTH
vs. ANALOG INPUT FREQUENCY, SINGLE-ENDED
MAX1185 toc11
ANALOG INPUT FREQUENCY (MHz)
GAIN (dB)
VIN = 100mV
P-P
35
45
40
55
50
60
65
-20 0
SIGNAL-TO-NOISE RATIO
vs. ANALOG INPUT POWER (f
IN
= 7.53MHz)
MAX1185 toc12
ANALOG INPUT POWER (dBFS)
SNR (dB)
-12-16 -8 -4
35
45
40
55
50
60
65
-20 0
SIGNAL-TO-NOISE PLUS DISTORTION
vs. ANALOG INPUT POWER (f
IN
= 7.53MHz)
MAX1185 toc13
ANALOG INPUT POWER (dBFS)
SINAD (dB)
-12-16 -8 -4
-85
-80
-75
-65
-70
-60
-55
-20 -12-16 -8 -4 0
TOTAL HARMONIC DISTORTION
vs. ANALOG INPUT POWER (f
IN
= 7.53MHz)
MAX1185 toc14
ANALOG INPUT POWER (dBFS)
THD (dBc)
60
55
75
70
65
85
80
90
-20 -12-16 -8 -4 0
SPURIOUS-FREE DYNAMIC RANGE
vs. ANALOG INPUT POWER (f
IN
= 7.53MHz)
MAX1185 toc15
ANALOG INPUT POWER (dBFS)
SFDR (dBc)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0 256128 384 512 640 768 896 1024
INTEGRAL NONLINEARITY
(BEST END-POINT FIT)
MAX1185 toc16
DIGITAL OUTPUT CODE
INL (LSB)
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0 256128 384 512 640 768 896 1024
DIFFERENTIAL NONLINEARITY
MAX1185 toc17
DIGITAL OUTPUT CODE
DNL (LSB)
-0.1
-0.2
0.1
0
0.3
0.2
0.4
-40 85
GAIN ERROR vs. TEMPERATURE
MAX1185 toc18
TEMPERATURE (°C)
GAIN ERROR (%FS)
10-15 35 60
CHB
CHA
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