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DS5001FP
ORDERING INFORMATION
PART TEMP RANGE
DS5001FP-16 0°C to +70°C 16 80 MQFP
DS5001FP-16+ 0°C to +70°C 16 80 MQFP
DS5001FP-16N -40°C to +85°C 16 80 MQFP
DS5001FP-16N+ -40°C to +85°C 16 80 MQFP
DS5001FP-12-44 0°C to +70°C 12 44MQFP
DS5001FP-12-44+ 0°C to +70°C 12 44 MQFP
+ Denotes a Pb-free/RoHS-compliant device.
MAX CLOCK
SPEED (MHz)
PINPACKAGE
DESCRIPTION
The DS5001FP 128k soft microprocessor chip is an 8051-compatible microprocessor based on NV RAM
technology and designed for systems that need large quantities of nonvolatile memory. It provides full
compatibility with the 8051 instruction set, timers, serial port, and parallel I/O ports. By using NV RAM
instead of ROM, the user can program and then reprogram the microprocessor while in-system. The
application software can even change its own operation, which allows frequent software upgrades,
adaptive programs, customized systems, etc. In addition, by using NV SRAM, the DS5001FP is ideal for
data logging applications. It also connects easily to a Dallas real-time clock.
The DS5001FP provides the benefits of NV RAM without using I/O resources. It uses a nonmultiplexed
byte-wide address and data bus for memory access. This bus performs all memory access and provides
decoded chip enables for SRAM, which leaves the 32 I/O port pins free for application use. The
DS5001FP uses ordinary SRAM and battery-backs the memory contents for over 10 years at room
temperature with a small external battery. A DS5001FP also provides high-reliability operation in harsh
environments. These features include the ability to save the operating state, power-fail reset, power-fail
interrupt, and watchdog timer.
A user programs the DS5001FP through its on-chip serial bootstrap loader. The bootstrap loader
supervises the loading of software into NV RAM, validates it, and then becomes transparent to the user.
Software can be stored in multiple 32kB or one 128kB CMOS SRAM(s). Using its internal partitioning,
the DS5001FP can divide a common RAM into user-selectable program and data segments. This partition
can be selected at program loading time, but can then be modified later at any time. The microprocessor
decodes memory access to the SRAM and addresses memory through its byte-wide bus. Memory portions
designated code or ROM are automatically write-protected by the microprocessor. Combining program
and data storage in one device saves board space and cost.
The DS5001FP offers several bank switches for access to even more memory. In addition to the primary
data area of 64kB, a peripheral selector creates a second 64kB data space with four accompanying chip
enables. This area can be used for memory-mapped peripherals or more data storage. The DS5001FP can
also use its expanded bus on ports 0 and 2 (like an 8051) to access an additional 64kB of data space.
Lastly, the DS5001FP provides one additional bank switch that changes up to 60kB of the NV RAM
program space into data memory. Thus, with a small amount of logic, the DS5001 accesses up to 252kB
of data memory.
The DS2251T is available (Refer to the data sheet at www.maxim-ic.com/microcontrollers
.) for users
who want a preconstructed module using the DS5001FP, RAM, lithium cell, and a real-time clock. For
more details, refer to the Secure Microcontroller User’s Guide. For users desiring software security, the
DS5002FP is functionally identical to the DS5001FP but provides superior firmware security. The 44-pin
version of the device is functionally identical to the 80-pin version but sports a reduced pin count and
footprint.
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Figure 1. BLOCK DIAGRAM
DS5001FP
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PIN DESCRIPTION
PIN
80 PIN 44 PIN
11, 9, 7,
5, 1, 79,
77, 75
31
(P0.5)
15, 17,
19, 21,
25, 27,
44
(P1.3)
29, 31
49, 50,
51, 56,
58, 60,
—
64, 66
36 8
NAME FUNCTION
P0.0–
P0.7
P1.0–
P1.7
P2.0–
P2.7
P3.0/RX
D
DS5001FP
General-Purpose I/O Port 0. This port is open-drain and cannot drive a logic 1. It
requires external pullups. Port 0 is also the multiplexed expanded address/data bus.
When used in this mode, it does not require pullups.
General-Purpose I/O Port 1
General-Purpose I/O Port 2. Also serves as the MSB of the address in expanded
memory accesses, and as pins of the RPC mode when used.
General-Purpose I/O Port Pin 3.0. Also serves as the receive signal for the on
board UART. This pin should not be connected directly to a PC COM port.
38 10
39 —
40 11
41 —
44 12
45 13
46 —
68 25
34 6
70 27
47, 48 14, 15
52 16
P3.1/TX
D
P3.2/
INT0
P3.3/
INT1
P3.4/T0
P3.5/T1
P3.6/
P3.7/
General-Purpose I/O Port Pin 3.1. Also serves as the transmit signal for the on
board UART. This pin should not be connected directly to a PC COM port.
General-Purpose I/O Port Pin 3.2. Also serves as the active-low external interrupt
0.
General-Purpose I/O Port Pin 3.3. Also serves as the active-low external interrupt
1.
General-Purpose I/O Port Pin 3.4. Also serves as the timer 0 input.
General-Purpose I/O Port Pin 3.5. Also serves as the timer 1 input.
General-Purpose I/O Port Pin. Also serves as the write strobe for expanded bus
WR
operation.
General-Purpose I/O Port Pin. Also serves as the read strobe for expanded bus
RD
operation.
Program Store Enable. This active-low signal is used to enable an external
program memory when using the expanded bus. It is normally an output and should
PSEN
be unconnected if not used.
PSEN is pulled down externally. This should only be done once the DS5001FP
time,
is already in a reset state. The device that pulls down should be open drain since it
must not interfere with
Active-High Reset Input. A logic 1 applied to this pin will activate a reset state.
RST
This pin is pulled down internally so this pin can be left unconnected if not used. An
RC power-on reset circuit is not needed and is not recommended.
Address Latch Enable. Used to demultiplex the multiplexed expanded address/data
ALE
bus on port 0. This pin is normally connected to the clock input on a ’373 type
transparent latch.
XTAL2,
XTAL1
Crystal Connections. Used to connect an external crystal to the internal oscillator.
XTAL1 is the input to an inverting amplifier and XTAL2 is the output.
GND Logic Ground
PSEN also is used to invoke the bootstrap loader. At this
PSEN under normal operation.
13 39
12 38
54 17
V
Power Supply, +5V
CC
Output. This is switched between VCC and VLI by internal circuits based on the
V
CC
V
CCO
level of V
The lithium cell remains isolated from a load. When V
switches to the V
V
LI
Lithium Voltage Input. Connect to a lithium cell greater than V
than V
LImax
. When power is above the lithium input, power will be drawn from VCC.
CC
is below VLI, the V
source. V
LI
CC
should be connected to the VCC pin of an SRAM.
CCO
LIMIN
CCO
and no greater
as shown in the electrical specifications. Nominal value is +3V.
4 of 27
PIN DESCRIPTION (continued)
PIN
80 PIN 44 PIN
53, 16,
8, 18,
80, 76,
4, 6, 20,
24, 26,
28, 30,
33, 35,
41, 36,
42, 32,
30, 34,
35, 43,
1, 2, 3,
4, 5, 7,
37
71, 69,
67, 65,
61, 59,
57, 55
28, 26,
24, 23,
21, 20,
19, 18
10 37
74 29
72 —
2 33
63 22
62 —
78 —
3 —
22 —
23 —
32 —
9
NAME FUNCTION
Byte-Wide Address Bus Bits 14–0. This bus is combined with the nonmultiplexed
data bus (BD7–0) to access NV SRAM. Decoding is performed using
BA14–
BA0
CE4 . Therefore, BA15 is not actually needed. Read/write access is controlled by
W . BA14–0 connect directly to an 8k, 32k, or 128k SRAM. If an 8k RAM is
R/
used, BA13 and BA14 are unconnected. If a 128k SRAM is used, the micro converts
CE2 and CE3 to serve as A16 and A15 respectively.
Byte-Wide Data Bus Bits 7–0. This 8-bit, bidirectional bus is combined with the
BD7–0
nonmultiplexed address bus (BA14–0) to access NV SRAM. Decoding is performed
on
CE1 and CE2 . Read/write access is controlled by R/ W . BD7–0 connect directly to
an SRAM, and optionally to a real-time clock or other peripheral.
Read/Write. This signal provides the write enable to the SRAMs on the byte-wide
R/
W
bus. It is controlled by the memory map and partition. The blocks selected as
program (ROM) are write-protected.
Chip Enable 1. This is the primary decoded chip enable for memory access on the
CE1
byte-wide bus. It connects to the chip enable input of one SRAM. CE1 is lithiumbacked. It remains in a logic high inactive state when V
CE1N
Non-Battery-Backed Version of Chip Enable 1. This can be used with a 32kB EPROM. It should not be used with a battery-backed chip.
Chip Enable 2. This chip enable is provided to access a second 32k block of
CE2
memory. It connects to the chip enable input of one SRAM. When MSEL = 0, the
micro converts
remains at a logic high when V
Chip Enable 3. This chip enable is provided to access a third 32k block of memory.
CE3
It connects to the chip enable input of one SRAM. When MSEL = 0, the micro
converts
CE3 into A15 for a 128k x 8 SRAM. CE3 is lithium-backed and remains at
a logic high when V
Chip Enable 4. This chip enable is provided to access a fourth 32k block of
CE4
memory. It connects to the chip-enable input of one SRAM. When MSEL = 0, this
signal is unused.
Peripheral Enable 1. Accesses data memory between addresses 0000h and 3FFFh
when the PES bit is set to a logic 1. Commonly used to chip enable a byte-wide real-
PE1
time clock such as the DS1283.
when VCC falls below VLI. Connect PE1 to battery-backed functions only.
Peripheral Enable 2. Accesses data memory between addresses 4000h and 7FFFh
PE2
when the PES bit is set to a logic 1.
high when V
Peripheral Enable 3. Accesses data memory between addresses 8000h and BFFFh
PE3
when the PES bit is set to a logic 1.
to any type of peripheral function. If connected to a battery-backed chip, it needs
additional circuitry to maintain the chip enable in an inactive state when V
Peripheral Enable 4. Accesses data memory between addresses C000h and FFFFh
PE4
when the PES bit is set to a logic 1.
to any type of peripheral function. If connected to a battery-backed chip, it needs
additional circuitry to maintain the chip enable in an inactive state when V
Invokes the bootstrap loader on a falling edge. This signal should be debounced
PROG
so that only one edge is detected. If connected to ground, the micro enters bootstrap
loading on power-up. This signal is pulled up internally.
CE1 through
falls below VLI.
CC
CE2 into A16 for a 128k x 8 SRAM. CE2 is lithium-backed and
falls below VLI.
CC
falls below VLI.
CC
CE4 is lithium-backed and remains at a logic high when V
PE1 is lithium-backed and remains at a logic high
PE2 is lithium-backed and remains at a logic
falls below VLI. Connect PE2 to battery-backed functions only.
CC
PE3 is not lithium-backed and can be connected
PE4 is not lithium-backed and can be connected
DS5001FP
< VLI.
CC
< VLI.
CC
< VLI.
CC
5 of 27
DS5001FP
PIN DESCRIPTION (continued)
PIN
80 PIN 44 PIN
42 —
43 —
14 40
73 —
NAME FUNCTION
This I/O pin (open drain with internal pullup) indicates that the power supply
(V
) has fallen below the V
CC
VRST
PF
MSEL
N.C. No Connection
this occurs, the DS5001FP drives this pin to a logic 0. Because the micro is lithiumbacked, this signal is guaranteed even when V
also forces a reset if pulled low externally. This allows multiple parts to synchronize
their power-down resets.
This output goes to a logic 0 to indicate that V
switched to lithium backup. Because the micro is lithium-backed, this signal is
guaranteed even when V
lithium-powered current to isolate battery-backed functions from non-battery-backed
functions.
Memory Select. This signal controls the memory size selection. When MSEL =
+5V, the DS5001FP expects to use 32k x 8 SRAMs. When MSEL = 0V, the
DS5001FP expects to use a 128k x 8 SRAM. MSEL must be connected regardless of
partition, mode, etc.
= 0V. The normal application of this signal is to control
CC
level and the micro is in a reset state. When
CCmin
= 0V. Because it is an I/O pin, it
CC
< VLI and the micro has
CC
INSTRUCTION SET
The DS5001FP executes an instruction set that is object code-compatible with the industry standard 8051
microcontroller. As a result, software development packages such as assemblers and compilers that have
been written for the 8051 are compatible with the DS5001FP. A complete description of the instruction
set and operation are provided in the Secure Microcontroller User’s Guide. Also note that the DS5001FP
is embodied in the DS2251T module. The DS2251T combines the DS5001FP with between 32k and 128k
of SRAM, a lithium cell, and a real-time clock. This is packaged in a 72-pin SIMM module.
MEMORY ORGANIZATION
Figure 2 illustrates the memory map accessed by the DS5001FP. The entire 64k of program and 64k of
data are potentially available to the byte-wide bus. This preserves the I/O ports for application use. The
user controls the portion of memory that is actually mapped to the byte-wide bus by selecting the program
range and data range. Any area not mapped into the NV RAM is reached by the expanded bus on ports 0
and 2. An alternate configuration allows dynamic partitioning of a 64k space as shown in Figure 3.
Selecting PES=1 provides another 64k of potential data storage or memory-mapped peripheral space as
shown in Figure 4. These selections are made using special function registers. The memory map and its
controls are covered in detail in the Secure Microcontroller User’s Guide.
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Figure 2. MEMORY MAP IN NONPARTITIONABLE MODE (PM = 1)
DS5001FP
7 of 27
Figure 3. MEMORY MAP IN PARTITIONABLE MODE (PM = 0)
DS5001FP
NOTE: PARTITIONABLE MODE IS NOT SUPPORTED WHEN MSEL PIN = 0 (128kB MODE).
8 of 27
Figure 4. MEMORY MAP WITH PES = 1
DS5001FP
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