The DS2762 high-precision Li+ battery monitor is a
data-acquisition, information-storage, and safetyprotection device tailored for cost-sensitive battery
pack applications. This low-power device integrates
precise temperature, voltage, and current
measurement, nonvolatile (NV) data storage, and Li+
protection into the small footprint of either a TSSOP
package or flip-chip package. The DS2762 is a key
component in applications including remaining
capacity estimation, safety monitoring, and batteryspecific data storage.
§ Host Alerted When Accumulated Current or
Temperature Exceeds User-Selectable Limits
§ 0V Battery Recovery Charge
§ Available in Two Configurations:
Internal 25mW Sense Resistor
External User-Selectable Sense Resistor
§ Current Measurement
12-Bit Bidirectional Measurement
Internal Sense Resistor Configuration:
0.625mA LSB and ±1.9A Dynamic Range
External Sense Resistor Configuration:
15.625mV LSB and ±64mV Dynamic Range
§ Current Accumulation:
Internal Sense Resistor: 0.25mAhr LSB
External Sense Resistor: 6.25mVhr LSB
§ Voltage Measurement with 4.88mV Resolution
§ Temperature Measurement Using Integrated
Sensor with 0.125°C Resolution
§ System Power Management and Control
Feature Support
§ 32 Bytes of Lockable EEPROM
§ 16 Bytes of General-Purpose SRAM
§ Dallas 1-Wire
Device Address
§ Low-Power Consumption:
Active Current: 60mA typ, 90mA max
Sleep Current: 1mA typ, 2mA max
APPLICATIONS
PDAs
Cell Phones/Smartphones
Digital Cameras
ORDERING INFORMATION
PART TEMP RANGE PIN-PACKAGE
®
Interface with Unique 64-Bit
DS2762BE+ -20°C to +70°C 16 TSSOP
1-Wire is registered trademark of Dallas Semiconductor.
Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device
may be simultaneously available through various sales channels. For information about device errata, click here: www.maxim-ic.com/errata
Selector Guide appears at end of data sheet, for additional
options.
.
1 of 25
REV: 010906
DS2762 High-Precision Li+ Battery Monitor With Alerts
ABSOLUTE MAXIMUM RATINGS
Voltage Range on PLS and CC Pin, Relative to VSS
Voltage Range on PIO Pin, Relative to V
Voltage Range on Any Other Pin, Relative to V
-0.3V to +12V
SS
-0.3V to +6V
SS
Continuous Internal Sense Resistor Current
Pulsed Internal Sense Resistor Current
±50A for <100µs/s, <1000 pulses
Operating Temperature Range -40°C to +85°C
Storage Temperature Range -55°C to +125°C
Soldering Temperature See IPC/JEDEC J-STD-020A Specification
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to the absolute maximum rating conditions for extended periods may affect device.
-0.3V to +18V
±2.5A
RECOMMENDED DC OPERATING CONDITIONS
(2.5V £ VDD £ 5.5V, TA = -20°C to +70°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Supply Voltage VDD (Note 1) 2.5 5.5 V
Data Pin DQ (Note 1) -0.3 +5.5 V
DC ELECTRICAL CHARACTERISTICS
(2.5V £ VDD £ 5.5V, TA = -20°C to +70°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Active Current I
Sleep Mode Current I
DQ = VDD, normal operation 60 90
ACTIVE
SLEEP
DQ = 0V, no activity, PS floating
1 2
mA
mA
Input Logic High: DQ, PIO VIH (Note 1) 1.5 V
(Note 1) VDD - 0.2V V
Input Logic High: PS
V
IH
Input Logic Low: DQ, PIO VIL (Note 1) 0.4 V
(Note 1) 0.2 V
Input Logic Low: PS
Output Logic High: CC
Output Logic High: DC
Output Logic Low: CC, DC
Output Logic Low: DQ, PIO V
DQ Pulldown Current IPD 1
Input Resistance: VIN R
V
IL
V
OH
V
OH
V
OL
OL
IOH = -0.1mA (Note 1) V
IOH = -0.1mA (Note 1) VDD - 0.4V V
IOL = 0.1mA (Note 1) 0.4 V
IOL = 4mA (Note 1) 0.4 V
- 0.4V V
PLS
mA
IN
5
MW
Internal Current-Sense Resistor R
DQ Low to Sleep time t
SNS
SLEEP
+25°C 20 25 30
2 of 25
mW
2.1 s
DS2762 High-Precision Li+ Battery Monitor With Alerts
ELECTRICAL CHARACTERISTICS: PROTECTION CIRCUITRY
(2.5V £ VDD £ 5.5V, TA = 0°C to +50°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Overvoltage Detect VOV (Notes 1, 2)
V
4.250 4.275 4.300
Charge Enable VCE (Note 1) 4.10 4.15 4.20 V
Undervoltage Detect VUV (Note 1) 2.5 2.6 2.7 V
4.325 4.350 4.375
Overcurrent Detect I
OC
(Note 3) 1.8 1.9 2.0 A
Overcurrent Detect VOC (Note 1, 4) 45 47.5 50 mV
Short-Circuit Detect ISC (Note 3) 5.0 8.0 11 A
Short-Circuit Detect V
Overvoltage Delay t
Undervoltage Delay t
Overcurrent Delay t
Short-Circuit Delay t
Test Threshold V
Test Current I
SC
0.8 1 1.2 s
OVD
90 100 110 ms
UVD
5 10 20 ms
OCD
SCD
TP
TST
(Note 1) 150 200 250 mV
160 200 240
ms
0.5 1.0 1.5 V
10 20 40
mA
Recovery Charge Current IRC (Note 5) 0.5 1 2 mA
3 of 25
DS2762 High-Precision Li+ Battery Monitor With Alerts
ELECTRICAL CHARACTERISTICS: TEMPERATURE, VOLTAGE, CURRENT
(2.5V £ VDD £ 5.5V, TA = -20°C to +50°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Temperature Resolution T
Temperature Full-Scale Magnitude T
Temperature Error T
Voltage Resolution V
Voltage Full-Scale Magnitude V
Voltage Offset Error V
Voltage Gain Error V
Current Resolution I
Current Full-Scale Magnitude I
Current Offset Error I
Current Gain Error I
Accumulated Current Resolution q
LSB
FS
ERR
LSB
FS
OERR
GERR
LSB
FS
OERR
GERR
CA
0.125
127
(Note 6)
±3 °C
°C
°C
4.88 mV
4.75 V
(Note 7) 1 LSB
5 %
(Note 3) 0.625 mA
(Note 4) 15.625
mV
(Notes 3, 4) 1.92.56 A
(Note 8) 64 mV
(Note 9) 1 LSB
(Notes 3, 10, 14) 3
%
(Note 4) 1
(Note 3) 0.25 mAhr
(Note 4) 6.25 µVhr
Current Sampling Frequency f
SAMP
t
ERR1
1456 Hz
(Note 11)
Internal Timebase Accuracy
t
ERR2
(Note 11)
EEPROM RELIABILITY SPECIFICATION
(2.5V £ VDD £ 5.5V, TA = -20°C to +70°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Copy to EEPROM Time t
EEPROM Copy Endurance N
EEC
EEC
2 10 ms
(Note 12) 25,000 cycles
±1 ±3
±6.5
%
%
4 of 25
DS2762 High-Precision Li+ Battery Monitor With Alerts
ELECTRICAL CHARACTERISTICS: 1-WIRE INTERFACE
(2.5V £ VDD £ 5.5V, TA = -20°C to +70°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Time Slot t
Recovery Time t
Write 0 Low Time t
Write 1 Low Time t
Read Data Valid t
Reset Time High t
Reset Time Low t
Presence Detect High t
Presence Detect Low t
SWAP Timing Pulse Width t
SWAP Timing Pulse Falling Edge to DC
Release
SWAP Timing Pulse Rising Edge to DC
Engage
60 120
SLOT
1
REC
60 120
LOW0
1 15
LOW1
15
RDV
480
RSTH
480 960
RSTL
15 60
PDH
60 240
PDL
SWL
t
SWOFF
t
SWON
(Note 13) 0 1
(Note 13) 0 1
0.2 120
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
DQ Capacitance CDQ 60 pF
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Note 10:
Note 11:
Note 12:
Note 13:
Note 14:
All voltages are referenced to V
See the Selector Guide section to determine the corresponding part number for each V
Internal current-sense resistor configuration.
External current-sense resistor configuration.
Test conditions are PLS = 4.1V, V
Self-heating due to output pin loading and sense resistor power dissipation can alter the reading from ambient conditions.
Voltage offset measurement is with respect to V
The current register supports measurement magnitudes up to 2.56A using the internal sense resistor option and 64mV with the
external resistor option. Compensation of the internal sense resistor value for process and temperature variation can reduce the
maximum reportable magnitude to 1.9A.
Current offset error null to ±1LSB typically requires 3.5s in-system calibration by user.
Current gain error specification applies to gain error in converting the voltage difference at IS1 and IS2, and excludes any error
remaining after the DS2762 compensates for the internal sense resistor’s temperature coefficient of 3700ppm/°C to an accuracy
of ±500ppm/°C. The DS2762 does not compensate for external sense resistor characteristics, and any error terms arising from
the use of an external sense resistor should be taken into account when calculating total current measurement error.
Typical value for t
for -20°C to +70°C.
Four-year data retention at +70°C.
Typical load capacitance on DC and CC is 1000pF.
Error at time of shipment from Dallas Semiconductor is 3% max. Board mounting processes may cause the current gain error
to widen to as much as 10% for devices with the internal sense resistor option. Contact factory for on-board recalibration
procedure for devices with the internal sense resistor option to improve accuracy.
is specified at 3.6V and +25°C, max value is specified for 0°C to +50°C. Max value for t
ERR1
.
SS
value.
OV
= 2.5V. Maximum current for conditions of PLS = 15V, VDD = 0V is 10mA.
DD
at +25°C.
OV
is specified
ERR2
5 of 25
PIN DESCRIPTION
PIN
TSSOP
FLIP
CHIP
1 C1
2 B1 PLS
3 B2
4, 5, 6 A3 SNS
7 B4 DQ
SYMBOL FUNCTION
CC
DC
DS2762 High-Precision Li+ Battery Monitor With Alerts
Charge Protection Control Output. Controls an external P-channel high-side charge
protection FET.
Battery Pack Positive Terminal Input. The DS2762 monitors the pack plus terminal
through PLS to detect overcurrent and overload conditions, as well as the presence of a
charge source. Additionally, a charge path to recover a deeply depleted cell is provided
from PLS to V
connected to PLS is discharged internally to V
reliable detection of a valid charge source. For details of other internal connections to
PLS and associated conditions see the Li+ Protection Circuitry section.
Discharge Protection Control Output. Controls an external P-channel high-side
discharge protection FET.
Sense Resistor Connection. Connect to the negative terminal of the battery pack. In
the internal sense resistor configuration, the sense resistor is connected between V
and SNS.
Data Input/Out. 1-Wire data line. Open-drain output driver. Connect this pin to the DATA
terminal of the battery pack. Pin has an internal 1mA pulldown for sensing disconnection.
. In sleep mode (with SWEN = 0), any capacitance or voltage source
DD
through 200µA (nominal) to assure
SS
SS
8 C4 IS2
9 D4 IS1
10 E4
11, 12, 13 F3
14 E2
15 E1 VDD
16 D1 VIN
— C2
— D2
Probe
Probe
PS
V
SS
PIO
SNS
V
SS
Current-Sense Input. This pin is internally connected to SNS through a 4.7kW resistor.
Current-Sense Input. This pin is internally connected to V
through a 4.7kW resistor.
SS
Connect a 0.1mF capacitor between IS1 and IS2 to complete a lowpass input filter.
Power Switch Sense Input. The device wakes up from sleep mode when it senses the
closure of a switch to V
Device Ground. Connect directly to the negative terminal of the Li+ cell. For the external
sense resistor configuration, connect the sense resistor between V
on this pin. Pin has an internal 1mA pullup to VDD.
SS
and SNS.
SS
Programmable I/O Pin. Can be configured to be used to control and monitor user-
defined external circuitry or as an interrupt output to alert the host when preset current
accumulator or temperature limits are exceeded. Open drain to V
.
SS
Power-Supply Input. Connect to the positive terminal of the Li+ cell through a
decoupling network.
Voltage Sense Input. The voltage of the Li+ cell is monitored through this input pin. This
pin has a weak pullup to V
DD
.
Do not connect.
Do not connect.
6 of 25
DS2762 High-Precision Li+ Battery Monitor With Alerts
SS
CC D
Figure 1. Block Diagram
DQ
THERMAL
SENSE
V
+
IS1
-
IS2
PLS
PS
SNS
1-Wire
INTERFACE
AND
ADDRESS
VOLTAGE
REFERENCE
MUX
INTERNAL SENSE RESISTOR
CONFIGURATION ONLY
25mW
IS2IS1
DS2762
ADC
REGISTERS AND
USER MEMORY
LOCKABLE EEPROM
SRAM
TEMPERATURE
VOLTAGE
CURRENT
ACCUM. CURRENT
STATUS/CONTROL
Li+ PROTECTION
CHIP GROUND
TIMEBASE
PIO
C
V
DETAILED DESCRIPTION
The DS2762 high-precision Li+ battery monitor is a data-acquisition, information-storage, and safety-protection
device tailored for cost-sensitive battery pack applications. This low-power device integrates precise temperature,
voltage, and current measurement, nonvolatile (NV) data storage, and Li+ protection into the small footprint of
either a TSSOP package or flip-chip package. The DS2762 is a key component in applications including remaining
capacity estimation, safety monitoring, and battery-specific data storage.
Through its 1-Wire interface, the DS2762 gives the host system read/write access to status and control registers,
instrumentation registers, and general-purpose data storage. Each device has a unique factory-programmed 64-bit
net address that allows it to be individually addressed by the host system, supporting multibattery operation.
The DS2762 is capable of performing temperature, voltage, and current measurement to a resolution sufficient to
support process monitoring applications such as battery charge control, remaining capacity estimation, and safety
monitoring. Temperature is measured using an on-chip sensor, eliminating the need for a separate thermistor.
Bidirectional current measurement and accumulation are accomplished using either an internal 25mW sense
resistor or an external device. The DS2762 also features a programmable I/O pin that allows the host system to
sense and control other electronics in the pack, including switches, vibration motors, speakers, and LEDs. This pin
may also be used to alert the host when preset accumulated current or temperature limits are exceeded.
Three types of memory are provided on the DS2762 for battery information storage: EEPROM, lockable EEPROM,
and SRAM. EEPROM memory saves important battery data in true NV memory that is unaffected by severe battery
depletion, accidental shorts, or ESD events. Lockable EEPROM becomes ROM when locked to provide additional
security for unchanging battery data. SRAM provides inexpensive storage for temporary data.
7 of 25
Figure 2. Application Example
C
D
PS
0
102 x 2
PACK+
1kW
150W
1
150W
2
DATA
PACK-
NOTE 1: R
CONFIGURATIONS ONLY.
NOTE 2: R
CONFIGURATIONS ONLY.
IS PRESENT FOR EXTERNAL SENSE RESISTOR
SNS
IS PRESENT FOR INTERNAL SENSE RESISTOR
SNS-INT
1kW
PLS
SNS
SNS
SNS
DQ
IS2
DS2762
C
C
V
V
PIO
V
V
V
IS1
104
IN
DD
SS
SS
SS
DS2762 High-Precision Li+ Battery Monitor With Alerts
BAT+
1kW
R
SNS
(NOTE 1)
SNS
IS2IS1
150W
PIO
104
PS
4.7kW
BAT-
R
SNS-INT
(NOTE 2)
VSS
R
R
KS
4.7kW
VOLTAGE
SENSE
DS2762
KS
4.7kW
8 of 25
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