Magnatec BUZ901P, BUZ900P Datasheet
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ900P
BUZ901P
V
DSX
Drain – Source Voltage
V
GSS
Gate – Source Voltage
I
D
Continuous Drain Current
I
D(PK)
Body Drain Diode
P
D
Total Power Dissipation @ T
case
= 25°C
T
stg
Storage Temperature Range
T
j
Maximum Operating Junction Temperature
R
θJC
Thermal Resistance Junction – Case
±14V
8A
8A
125W
–55 to 150°C
150°C
1.0°C/W
MECHANICAL DATA
Dimensions in mm (inches)
1
32
3.55 (0.140)
3.81 (0.150)
0.40 (0.016)
0.79 (0.031)
2.21 (0.087)
2.59 (0.102)
1.01 (0.040)
1.40 (0.055)
15.49 (0.610)
16.26 (0.640)
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.49 (0.098)
20.80 (0.819)
21.46 (0.845)
6.15
(0.242)
BSC
19.81 (0.780)
20.32 (0.800)
4.50
(0.177)
Max.
1.65 (0.065)
2.13 (0.084)
5.25 (0.215)
BSC
2.87 (0.113)
3.12 (0.123)
N–CHANNEL
POWER MOSFET
FEATURES
• HIGH SPEED SWITCHING
• N–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• P–CHANNEL ALSO AVAILABLE AS
BUZ905P & BUZ906P
Pin 1 – Gate
TO–247
Pin 2 – Source Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
POWER MOSFETS FOR
AUDIO APPLICATIONS
BUZ900P
160V
BUZ901P
200V
TEC
MAGNA
Magnatec. Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
BUZ900P
BUZ901P
Characteristic Test Conditions Min. Typ. Max. Unit
BV
DSX
Drain – Source Breakdown Voltage
BV
GSS
Gate – Source Breakdown Voltage
V
GS(OFF)
Gate – Source Cut–Off Voltage
V
DS(SAT)
* Drain – Source Saturation Voltage
I
DSX
Drain – Source Cut–Off Current
yfs* Forward Transfer Admittance
160
200
±14
0.15 1.5
12
10
10
0.7 2
* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.
VGS= –10V BUZ900P
ID= 10mA BUZ901P
VDS= 0 IG= ±100µA
VDS= 10V ID= 100mA
VGD= 0 ID=8A
VDS= 160V
BUZ900P
VGS= –10V
VDS= 200V
BUZ901P
VDS= 10V ID= 3A
V
V
V
V
mA
S
Characteristic Test Conditions Min. Typ. Max. Unit
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
t
on
Turn–on Time
t
off
Turn-off Time
500
300
10
100
50
VDS= 10V
f = 1MHz
VDS= 20V
ID= 5A
pF
ns
STATIC CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
DYNAMIC CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
0 25 50 75 100 125 150
0
25
50
75
100
125
150
T — CASE TEMPERATURE (˚C)
C
CH AN NEL D ISS IPATION (W )
Derating Chart
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