Magnatec BCU86D Datasheet

Prelim.2/00

BCU86D

Magnatec. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

CBO

Collector – Base voltage

V

CEO

Collector – Emitter voltage (IB = 0)

V

EBO

Emitter – Base voltage

I

C

Collector current

I

CP

Collector Current (Pulse)

I

B

P

C

Collector Dissipation
(Mounted on Ceramic Board (750mm

2

x

0.8mm)

P

T

Total Dissipation
(Mounted on Ceramic Board (750mm

2

x

0.8mm)

T

j

Junction Temperature

T

stg

Storage Temperature

60V
50V

6V
5A
8A
1A

1.5W

2W

150°C

–55 to 150°C

MECHANICAL DATA

Dimensions in mm

NPN EPITAXIAL PLANAR

SILICON TRANSISTOR

Ideal For High current Switching

Application

FEATURES

•LOW V

CE(SAT)

• HIGH CURRENT CAPACITY

• FAST SWITCHING SPEED

ABSOLUTE MAXIMUM RATINGS(T

case

= 25°C unless otherwise stated)

5.9

2.4

0.8

0.4

2.4

4.2

4

0.5

0.7

1.0

2.4

0.8

3

2

1

5

6

5.0

6.2

1.5 1.5

1.0

5
6

4

3

1
2

0.4

1.8

Base 1 :

Collector 2
Collector 1

E m itte r 1
E m itte r 2

Base 2
:
:

:

:

:

Parameter Test Conditions Min. Typ. Max. Unit.

V

(BR)CEO

Collector – Emitter Base
Breakdown Voltage

V

(BR)CBO

Collector – Base
Breakdown Voltage

V

(

BR)EBO

Emitter Base Breakdown Voltage

I

CBO

Collector Cut–Off Current

I

EBO

Emitter Cut–Off Current

h

FE1

*

DC Current Gain

h

FE2*

DC Current Gain

h

FE

DC Current Gain Ratio (small/large)

V

CE(sat)

Collector – Emitter
SaturationVoltage

V

BE(sat)

Base – Emitter
Saturation Voltage

f

T

Gain Bandwidth Product

C

ob

Output Capacitance

t

on

Turn – On Time

t

stg

Storage Time

t

f

Fall Time

Prelim.2/00

BCU86D

Magnatec. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

IC= 1mA RBE= 00

IC= 10mAI

E

= 0

IE= – 10mAIC= 0
VCB= 40V IE= 0

VEB= 5V IC= 0
VCE= 2V IC= 500mA
VCE= 2V IC= 3A
VCE= 2V IC= 500mA

IC= 3A IB= 150mA

IC= 3A IB= 60mA
VCE= 5V IC= 500mA

VCB= 10V f = 1MH

z

See specified test circuit
See specified test circuit
See specified test circuit

50

60

6

1
1

140 400

35

0.8
220 400

0.95 1.3
180

40
50

500

20

V

V

V

m

A

–—

mV

V

MH

z

pF

ns

DYNAMICS CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

Switching Time Test Circuit

100 F

=2A

µ

+

PW =20

50

Ω

IN P U T

DC

BE

10I

V

B1

10I =-

= -5V

B2=IC

1%

≤

µ

s

B2

V

R

R

B

I

I

B1

=25V

V

CC

470 F

µ

+

R

L

12.5

Ω

OUTPUT