Magnatec BCU87, BCU86 Datasheet

Prelim.7/99

BCU86
BCU87

Magnatec. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

CBO

Collector – Base voltage

V

CEO

Collector – Emitter voltage (IB = 0)

V

EBO

Emitter – Base voltage

I

C

Collector current

I

CP

Collector Current (Pulse)

P

C

Collector Dissipation
(Mounted on Ceramic Board (250mm

2

x 0.8mm)

T

j

Junction Temperature

T

stg

Storage Temperature

1W

1.5W

150°C

–55 to 150°C

MECHANICAL DATA

Dimensions in mm

1 .4 5 P IT C H

5.0

6.0

3.0

14.0

8.5

0.5

TYP

4.7

EC

B

0.5

NPN/PNP EPITAXIAL PLANAR

SILICON TRANSISTOR

Ideal For High current Switching

Application

FEATURES

•LOW V

CE(SAT)

• HIGH CURRENT CAPACITY AND WIDE ASO

• ADOPTION OF FBET, MBIT PROCESS

APPLICATIONS

• POWER SUPPLIES

• RELAY DRIVERS

• LAMP DRIVERS

• CAR APPLICATIONS

TO92(EXTENDED)

ABSOLUTE MAXIMUM RATINGS(T

case

= 25°C unless otherwise stated)

BCU86 BCU87

60V
50V

6V
3A
6A

– 60V
– 50V

– 6V
– 3A
– 6A

Prelim.7/99

BCU86
BCU87

Magnatec. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit.

V

(BR)CEO

Collector – Emitter Base
Breakdown Voltage

V

(BR)CBO

Collector – Base
Breakdown Voltage

V

(BR)EBO

Emitter Base Breakdown Voltage

V

CBO

Collector Cut–Off Current

V

EBO

Emitter Cut–Off Current

h

FE1*

DC Current Gain

h

FE2*

DC Current Gain

f

T

Gain Bandwidth Product

C

ob

Output Capacitance

IC= 1mA BCU86
RBE= 0
IC= 10mA BCU86
IE= 0
IC= 0 BCU86
IE= 10mA
VCB= 40V BCU86
IE= 0
VBE= 4V BCU86
IC= 0
VCE= 2V BCU86
IC= 100mA
VCE= 2V BCU86
IC= 3A
VCE= 10V BCU86
IC= 50mA
VCB= 10V BCU86
f = 1MHz

50

60

6

1

1

100* 560*

40

150

25

V

V

V

mA

mA

—

—

MHz

pF

DYNAMICS CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

* The BCU86 / BCU87 are classified by 100mA hFEas follows:

100 R 200 140 S 280 200 T 400 280 U 560

* Pulse test tp= 300ms ,

d £

2%

Reverse Polarity for PNP, BCU87