Magnatec BCU83 Datasheet

Magnatec. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

CEO

Collector – Emitter voltage

V

CBO

Collector – Base voltage

V

EBO

Emitter – Base voltage

I

C

Collector current

I

C(PK)

Peak Collector current

P

tot

Total Dissipation at T

case

= 25°C

T

stg

Storage Temperature

T

j

Maximum Operating Junction Temperature

20V
60V

6V
5A
8A

0.9W

–55 to 150°C

150°C

BCU83–SMD

MECHANICAL DATA

Dimensions in mm

NPN EPITAXIAL PLANAR

SILICON TRANSISTOR

Ideal for high current driver applications

requiring low loss devices

FEATURES

•LOW V

CE(SAT)

• HIGH CURRENT

• HIGH ENERGY RATING

APPLICATIONS

• ANY HIGH CURRENT DRIVER
APPLICATIONS REQUIRING
EFFICIENT LOW LOSS DEVICES

SOT89

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

Prelim. 1/94

4.5

1.51.6

2.5

4.25 m ax.

1.0

0.40

0.50

1.5

3.0

-+*

0.40

Magnatec. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

BCU83–SMD

Prelim. 1/94

Collector cut–off current
Emitter cut–off current
Collector – Emitter
saturation voltage
Base – Emitter
saturation voltage

DC current gain

Transition frequency
Output capacitance

V

CB

= 50V IE= 0

V

EB

= 5V IC= 0

IC= 3A IB= 60mA

I

C

= 3A IB= 60mA

VCE= 2V IC= 0.5A
V

CE

= 2V IC= 3A

V

CE

= 10V IC= 50mA

V

CB

= 10V f = 1MHz

1.0

1.0

0.5

0.6 1.5

100 560

75

120

45

I

CBO

I

EBO

V

CE(sat)*

V

BE(sat)*

h

FE*

f

T

C

ob

Parameter Test Conditions Min. Typ. Max. Unit.

m

A

m

A

V

V

—

MHz

pF

* Pulse test tp= 300ms ,

d £

2%

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)