Magnatec BCU81 Datasheet

Prelim.9/98

BCU81-SMD

Magnatec. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

V

CBO

Collector – Base voltage

V

CEO

Collector – Emitter voltage (IB = 0)

V

EBO

Emitter – Base voltage

I

C

Collector current

I

CP

Collector Current (Pulse)

P

C

Collector Dissipation
(Mounted on Ceramic Board (250mm

2

x 0.8mm)

T

j

Junction Temperature

T

stg

Storage Temperature

30V
10V

6V
3A
5A

500mW

1.3W

150°C

–55 to 150°C

MECHANICAL DATA

Dimensions in mm

NPN EPITAXIAL PLANAR

SILICON TRANSISTOR

Ideal for high current driver applications

requiring low loss devices

FEATURES

•LOW V

CE(SAT)

• HIGH CURRENT

• HIGH ENERGY RATING

APPLICATIONS

• ANY HIGH CURRENT DRIVER
APPLICATIONS REQUIRING
EFFICIENT LOW LOSS DEVICES

SOT89

ABSOLUTE MAXIMUM RATINGS(T

case

= 25°C unless otherwise stated)

4.5

0.40

0.50

1.5

3.0

-+*

2.5

1.0

0.40

1.51.6

4.25 m ax.

Prelim.9/98

BCU81-SMD

Magnatec. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit.

V

(BR)CEO

Collector – Emitter Base
Breakdown Voltage

V

(BR)CBO

Collector – Base
Breakdown Voltage

V

(BR)EBO

Emitter Base Breakdown Voltage

I

CBO

Collector Cut–Off Current

I

EBO

Emitter Cut–Off Current

h

FE

DC Current Gain

f

T

Transition frequency

C

ob

Output Capacitance

IC= 1mA RBE= 0

IC= 10mAIE= 0
IC= 0 IE= 10mA

VCB= 20V IE= 0
VBE= 4V IC= 0
VCE= 2V IC= 3A
VCE= 10V IC= 50mA
VCB= 10V f = 1MHz

10

30

6

100
100

140 210

200

30

V

V
V

n

A

n

A

—

MHz

pF

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise stated)