M A COM manufacturer of RF CA66-3, A66-3 Datasheet
· HIGH GAIN - TWO STAGES: 26.0 dB (TYP.)
· LOW NOISE: <3.0 dB (TYP.)
· HIGH EFFICIENCY: 16 mA (TYP.) AT 5 VOLTS
A66-3/SMA66-3
10 TO 1000 MHz
Specifications (Rev. Date: 6/01)*
* Measured in a 50-ohm system at +5 Vdc Nominal. Subject to change without notice.
BG
AA
CE
5-1100 MHz
26.0 dB
±0.4 dB
36 dB
3.0 dB
3.0 dBm
+13 dBm
+32 dBm
+37 dBm
1.3:1 / 1.3:1
16 mA
24.5 dB
±0.7 dB
1.0 dBm
3.5 dB
1.5 dBm
2.0:1 / 2.0:1
19 mA
1.8:1 / 1.8:1
18 mA
24.0 dB
±1.0 dB
4.0 dB
-62° to +125°C
125°C
+10 Volts
+10 dBm
50 mW
0.5 W
125°C
170°C/W
0.016 W
3°C
A66-3
SMA66-3
CA66-3
5 Volts (max.)
5 Vdc
Frequency
Small Signal Gain (min.)
Gain Flatness (max.)
Reverse Isolation
Noise Figure (max.)
Power Output @ 1 dB comp. (min.)
IP3
IP2
Second Order Harmonic IP
VSWR Input / Output (max.)
DC Current @
0
°°°°
to 50
Guaranteed Characteristics Typical
°°°°
C -54
°°°°
to +85
Typical Performance @ 25°C
°°°°
C
Absolute Maximum Ratings
Storage Temperature
Max. Case Temperature
Max. DC Voltage
Max. Continuous RF Input Power
Max. Short Term RF Input Power (1 minute max.)
Max. Peak Power (3 µsec max.)
“S” Series Burn-in Temperature (Case)
Thermal Data: Vcc =
Thermal Resistance
Transistor Power Dissipation P
Junction Temperature Rise Above Case T
θ
jc
d
jc
Outline Drawings
Package TO-8 Surface Mount SMA Connectorized
Figure
Model
Specifications subject to change without notice. • North America: 1-800-366-2266
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