M A COM UF2840P Datasheet
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RF MOSFET Power Transistor, 4OW, 28V
100 - 500 MHz UF284OP
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
Common Source Configuration
Lower Noise Floor
. .
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating Units
Electrical Characteristics at 25°C
input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
* Per Side
Specifications Subject to Change Without Notice.
C
ISS
C
oss
C
RSS
GP
qD
VSWR-T -
i D i 627 i 6.33 1 247 1 257 1
H
] 1.40 1 165 1 055
J
1 292 I 3.M I 115
- ) 45 pF
30 pF
a
10 -
50 -
2O:l - V,,=28.0 V, 1,,=500.0 mA, P,,g40.0 W, F=500 MHz
Vg28.0 V, F=l .O MHz’
V,,=28.0 V, F=l .O MHz’
V,,=28.0 V, F=l .O MHz’
PF
V,,=28.0 V, 1,,=500.0 mA, P,fi40.0 W. F=500 MHz
dB
% V,,=28.0 V, 1,,=500.0 mA, Po,,=40.0 W, F=500 MHz
1 .D65
I 325
MIA-COM, Inc.
RF MOSFET Power Transistor, 4OW, 28V
Typical Broadband Performance Curves
U F284OP
v2.00
30
40
10
55
CAPACITANCES vs VOLTAGE
Fz1.0 MHz
C
RSS
5
10 15
"2, (")
GAIN vs FREQUENCY
v.,,=28 V I,,=500 mA PO,,=40 W
20
25 30
50
g 4o
f
L 30
2
5 20
E
10
65 -
POWER OUTPUT vs VOLTAGE
P,,=3.0 W I,,=500 mA F=500 MHz
/
0
5
10 15
20 25 30
35
v,, (“)
EFFICIENCY vs FREQUENCY
V,,=28 V I,,=500 mA P,,,=40 W
100
200 3w
FREQUENCY (MHz)
6
c 55.
kii
c
J
400 500
POWER OUTPUT vs POWER INPUT
60
0.1 0.25
VD,=28 V I,,=500 mA
1
POWER INPUT (W)
50 .
loo
200
FREQUENCY (MHz)
3430
400 500
1
J
2
2.5
M/A-COM, inc.
Specifications Subject to Change Without Notice.
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