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RF MOSFET Power Transistor, 4OW, 28V
100 -
500 MHz
Features
l N-Channel Enhancement Mode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l High Saturated Output Power
l Lower Noise Figure Than Competitive Devices
Absolute Maximum Ratings at 25°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source&rent
Power Dissipation
1 JunctionTemperature 1 T, (
Storage Temperature
Thermal Resistance
Symbol Rating
V
V
T
8
OS
GS
‘OS
P,
ST0
JC
65
20
4’
116
200
-55 to +150 “C
1.52 “C/w
UF2840G
v2.00
Units
V
V
A
w
I “C I
1 F I 6.22 I 6.48 1 a245 I .2X5 I
Electrical Characteristics at 25°C
* Per Side
Specificatms Subject to Change Without Notice.
M/A-COM, Inc.
1 K I l.18 I 203 I .070 I x180 I
RF MOSFET Power Transistor, 4OW, 28V
Typical Broadband Performance Curves
U F2840G
v2.00
25
100
GAIN vs FREQUENCY
V,,=28 V I,,=500 mA P,,,=40 W
200
FREQUENCY (MHz)
300 400
65 .
" 3
6
$ 60
.
0
ii
::
55 -
500
100 200
POWER OUTPUT vs POWER INPUT
V,,=28 V I,,=500 mA
EFFICIENCY vs FREQUENCY
V,,=28 V I,,=500 mA P,,,~40 W
300
FREQUENCY (%)
400 500
Specifications Subject to Change Without Notice.
0.25 0.5
POWER INPUT (W)
1 2
2.5
M/A-COM, Inc.