M A COM UF2820R Datasheet
RF MOSFET Power Transistor, 2OW, 28V
100 - 500 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
. .
Absolute Maximum Ratings at 25°C
Parameter
Drain-SourceVoltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
StorageTemperature
Thermal Resistance
1 Symbol 1 Rating Units
T
V
V
I
OS
PO
T
ST0
8
JC
OS
GS
6.5
20
4
61
200 “C
-55 to +150
2.66 “C/W
UF2820R
V
V
A
w
“C
Electrical Characteristics at 25°C
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
Specifications Subject to Change Without Notice.
C
ass
C
Rss
GP
00
VSWR-T - 2O:l -
10 50 -
30
8
V,,=28.0 V, F=l .O MHz
V,,=28.0 V, F=l .O MHz
PF
V,,=28.0 V, F=l .O MHz
PF
V,,=28.0 V, 1,,=100.0 mA, P,fl20.0 W, F=500 MHz
dB
V,,=28.0 V, I,,=1 00.0 mA, P,s20.0 W, F=500 MHz
%
V,,=28.0 V, l,,=lOO.O mA, P,e20.0 W, F=500 MHz
MIA-COM, Inc.
RF MOSFET Power Transistor, 2OW, 28V
Typical Broadband Performance Curves
UF2820R
v2.00
GAIN vs FREQUENCY
VD,=28 V I,,=1 00 mA PO,,,=20 W
.T
10 I
100 200 300 400 5w
FREQUENCY (MHz)
POWER OUTPUT vs POWER INPUT
25
V,,=28 V I,,=100 mA
EFFICIENCY vs FREQUENCY
I’,,=28 V IDD=l 00 mA PO,=20 W
‘OF
100
200
FREQUENCY (MHz)
300
POWER OUTPUT vs POWER INPUT
25
V,,=28 V I,,=1 00 mA
500
0
0.1 0.2 0.3 0.5 1.0 1.5 2.0
POWER INPUT (W)
Specifications Subject to Change Without Notice.
IWA-COM, Inc.
01
0.1 02 0.3 0.5 1.0 1.5 2.0
POWER INPUT(W)
NOISE FIGURE vs FREQUENCY
VDo=28 V I,,=1 00 mA
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