M A COM UF2820P Datasheet

RF MOSFET Power Transistor, 2OW, 28V
100 - 500 MHz

Features

l N-Channel Enhancement Mode Device
l DMOS Structure

l Lower Capacitances for Broadband Operation
l Common Source Configuration
l Lower Noise Floor

Absolute Maximum Ratings at 25°C

Parameter Symbol

Drain-Source Voltage

1 Gate-Source Voltage

I VGS I 20 I v I

Drain-Source Current
Power Dissipation
Junction Temperature

I StorageTemperature

I TSTG

1 Thermal Resistance

V

I

DS

PD
T,

05

Rating

65

2.8
53

200

1 -55to+150 I “C (

UF2820P

v2.00

Units

V

A
W
“C

Electrical Characteristics at 25°C

Parameter

Drain-Source Breakdown Voltage
Drain-Source Leakage Current

Gate-Source Leakage Current
GateThreshold Voltage
Forward Transconductance

_ Input Capacitance

Output Capacitance

Reverse Capacitance

Power Gain
Drain Efficiency

Load Mismatch Tolerance

* Per Side

Specifications Subject to Change Without Notice.

MIA-COM, inc.

Symbol

BV,,, 65 -

‘DSS
‘ass

V

GWHI

GM

C

C

ass

C

RSS

G.

I

qD

VSWR-T -

ES

/

Min Max Units lest Conditions

V

V,,=O.O V, 1,,=4.0 mA‘

2.0 mA

1

1 ,

2.0 pA

2.0 6.0 V

.160 -

V,,=28.0 V, V,,=O.O V’

V&20 v, v,,=o.o V’
V&O.0 V, 1,,=200.0 mA’
V&O.0 V, 1,,=200.0 mA, AV,,=l .O V, 80 us Pulse’

S

14 pF V,,=28.0 V, F=l .O MHz’

‘.‘,,=28.0 V, F=l .O MHz’
V,,=28.0 V, F=l .O MHz’
V,,=28.0 V, 1,,=200.0 mA. P -.._ =20.0 W. F=500 MHz

dB

--

V,D=28.0 V, 1,,=200.0 mA, P,U,=20.0 W, F=500 MHz

%

-- -~

“VI

- ( V,,=28.0 V, 1,,=200.0 mA, P,,p20.0 W, FSOO MHz

10 -

I

50 -

10 pF

4.8 pF

, I

I
1 2O:l 1

I 1

I

I

1

RF MOSFET Power Transistor, 2OW, 28V

Typical Broadband Performance Curves

UF282OP

v2.00

12

CAPACITANCES vs VOLTAGE

F=l.OMHz

5

10

15

20 25

30 10 15

30

GAIN vs FREQUENCY

V,,=28 V P,,p20 W I,,=200 mA

POWER OUTPUT vs VOLTAGE

P,,=l .O W I,,=200 mA F=500 MHz

25 30

EFFICIENCY vs FREQUENCY

I,,=200 mA PO520 W F=500 MHz

.I

35

‘O/

100

Specifications Subject to Change Without Notice.

200

FREQUENCY (MHz)

300

5aL

400

500

100 200 300 400 500

POWER OUTPUT vs POWER INPUT

25 ,

0.05 0.10 0.20 0.40 0.60 0.60 1.00

V,,=28 V I,,=200 mA

POWER INPUT(W)

-I

FREQUENCY (MHz)

1

J

M/A-COM, inc.