M A COM UF28150J Datasheet
UF28150J PRELIMINARY
POWER MOSFET TRANSISTOR
150 WATTS, 100 - 500 MHz, 28 V
FEATURES
OUTLINE DRAWING
• N-Channel Enhancement Mode Device
• Applications
• 150 Watts CW
• Common Source Gemini Configuration
• RESFET Structure
• Internal Input Impedance Matching
• Gold Metallization
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter Symbol Rating Units
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Drain-Source Current IDS 28 A
Dissipation @25°C PD 233 W
Storage Temperature Tstg -55 to +150 °C
Junction Temperature Tj 200 °C
Thermal Resistance
θjc
ELECTRICAL CHARACTERISTICS AT 25°C (*per side)
Parameter Symbol Min Max Units Test Conditions
Drain-Source Breakdown
Voltage
Drain-Source Leakage
Current
Gate-Source Leakage
Current
Gate Threshold Voltage V
Forward Transconductance Gm 1.0 - S VDS=10.0 V, IDS=2000 mA (pulsed)*
Input Capacitance C
Reverse Capacitance C
Output Capacitance C
Power Gain GP 10 - dB VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
Collector Efficiency
Load Mismatch Tolerance VSWR - 3.0:1 - VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
BV
DSS
I
- 4.0 mA VDS=28.0 V, VGS=0.0 V*
DSS
I
- 2.0
GSS
GS(th)
200 pF VDS=28.0 V, f=1.0 MHz (Reference Only)*
ISS
50 pF VDS=28.0 V, f=1.0 MHz*
RSS
14 pF VDS=28.0 V, f=1.0 MHz*
OSS
η
TYPICAL OPTIMUM DEVICE IMPEDANCE
F (MHz)
935 4.6 + j8.0 2.3 + j3.1
960 4.7 + j7.8 2.4 + j3.1
Z in (Ω) Z
0.75 °C/W
60 - V ID=40 mA, VGS=0.0 V*
µA
2.0 6.0 V VDS=10.0 V, IDS=200 mA*
50 - % VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
(Ω)
load
VGS=20 V, VDS=0.0 V*
M/A-COM POWER TRANSISTORS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501
(310) 320-6160 • FAX (310) 618-9191
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96
TYPICAL BROADBAND PERFORMANCE CURVES - UF28150J
Output Power vs Input Power Output Power vs Drain Voltage
Power Output (W)
100
90
Vds = 26 V Idq = .40 A
80
70
60
50
40
30
20
10
0
0246810
Power Input (W )
960 MHz
935 MHz
Power Output (W)
100
90
80
70
60
50
40
30
20
10
0
19 21 23 25 27 29
Gain vs. Frequency Efficiency vs. Frequency
Gain (dB)
12
11.5
11
10.5
10
9.5
9
932 936 940 944 948 952 956 960 964
Frequency (MHz)
Efficiency (%)
70
65
60
55
50
45
40
35
30
932 936 940 944 948 952 956 960 964
Frequency = 960 MHz Idq = .40 A Pin = 8.0 W
Drain Volt age (V)
Vds = 26 V Idq = .40 A Po = 80 W
Frequency (MHz)
Gain vs. Temperature Capacitance vs. Voltage
Gain (dB)
13
12
11
10
9
Vds = 26 V Idq = .40 A Po = 80 W F = 960 MHz
8
20 40 60 80 100 120
Case Temperature (C)
80
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35
F = 1 MHz
Drain Voltage (V)
M/A-COM POWER TRANSISTORS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501
(310) 320-6160 • FAX (310) 618-9191
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96
Crss
Coss
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