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uf28150j
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MACOM uf28150j Datasets

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Page 1
UF28150J
RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V
Features
• DMOS structure
• Lower capacitance for broadband operation
• Common source configuration
VDS
VGS
IDS
PD
TJ
STG
ΘJC
1, 2, 3
ABSOLUTE MAXIMUM RATINGS
Parameter Rating
Drain-Source Voltage 65
Gate-Source Voltage 20
Drain-Source Current 16*
Power Dissipation 389
Junction Temperature 200
Storage Temperature -65 to +150
Thermal Resistance 0.45
Symbol
T
M/A-COM Products
Released; RoHS Compliant
Package Outline
Units
V
V
A
W
°C
°C
°C/W
1. Exceeding any one or combination of these limits may cause permanent damage to this device.
2. M/A-COM does not recommend sustained operation near these maximum limits.
3. At 25°C Tcase, unless noted.
ELECTRICAL SPECIFICATIONS: 25°C
Parameter Test Conditions Units Min. Max.
Drain-Source Breakdown Voltage VGS = 0.0 V, IDS = 20.0 mA* BV
Drain-Source Leakage Current VDS = 28.0 V, VGS = 0.0V* I
Gate-Source Leakage Current VGS = 20 V, VDS = 0.0 V* I
Gate Threshold Voltage VDS = 10.0 V, IDS = 400.0 mA* V
Forward Transconductance VDS = 10.0 V, IDS = 4000.0 mA, ∆VGS = 1.0 V, 80µs pulse* GM 2.0 —
Input Capacitance VDS = 28.0V, F = 1.0 MHz* C
Output Capacitance VDS = 28.0V, F = 1.0 MHz* C
Reverse Capacitance VDS = 28.0V, F = 1.0 MHz* C
Power Gain VDD = 28.0 V, IDQ = 400.0 mA, P
Drain Efficiency VDD = 28.0 V, IDQ = 400.0 mA, P
Load Mismatch Tolerance VDD = 28.0 V, IDQ = 400.0 mA, P
= 150.0 W, F = 500 MHz GP 8 —
OUT
= 150.0 W, F = 500 MHz ηD 55 —
OUT
= 150.0 W, F = 500 MHz VSWR-T — 10:1**
OUT
Notes: * Per side ** At all phase angles
65 —
DSS
— 4.0
DSS
— 4.0
GSS
2.0 6.0
GS(TH)
— 180
ISS
— 120
OSS
— 32
RSS
1
ADVANC ED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Page 2
UF28150J
RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V
Capacitance vs Voltage
F=1.0 MHz
F)
P
Capacitance (
V
DD
V
DS
Gain vs Frequency
=28V P
OUT
=100W I
(V)
C
OSS
=400mA
DQ
Typical Broadband Performance Curves
C
ISS
C
OSS
Power Output (W)
65
Released; RoHS Compliant
Power Output vs Voltage
P
=24 W I
IN
Efficiency vs Frequency
V
=28W I
DD
=400 mA F=500 MHz
DQ
V
DD
=400mA P
DQ
M/A-COM Products
(V)
=150W
OUT
60
55
Gain (dB)
Frequency (MHz)
Power Output vs Power Input
V
=28W I
DD
Efficiency (%)
=400mA
DQ
50
Frequency (MHz)
Power Output (W)
Power Input (W)
2
ADVANC ED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Page 3
UF28150J
RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V
TYPICAL OPTIMUM DEVICE IMPEDANCES
F (MHz) ZIN (Ω) Z
100 3.7 - j5.9 3.0 - j0.7
300 2.7 - j5.9 2.6 - j0.55
500 2.5 - j2.9 2.5 - j0.5
VDD = 28V, IDQ = 400mA, P
= 150W
OUT
LOAD
(Ω)
C23 C1 C12 C2, 3, 13, 22 C7,16 C4,6,15,17 C18
R1 R2 R3
T1 T2,3,4,5 T6
L1 L2
L3,4
RL1
Q1A, 1B
M/A-COM Products
Released; RoHS Compliant
PARTS LIST
1.0pF
9.1pF 11pF 270pF 680pF .015uF 50uF 50V
11K OHM .25 W. 10% 47 OHM .05 W. 10% 12 OHM .25 W. 10%
2.50’ OF 50 OHM (.85’ OD) SEMI-RIGID CABLE
2.50’ OF 10 OHM (.70’ OD) SEMI-RIGID CABLE
2.50’ OF 50 OHM (.141’ OD) SEMI-RIGID CABLE
5uH 16 TURNS OF NO. 18 AWG ON TORID CORE (INDIANA GENERAL F6278-Q1)
4 TURNS OF NO. 18 AWG ON .125 DIAMETER
9 TURNS OF NO. 18 AWG ON 15 OHM 2 W. 10% RESISTOR
UF28150J
HANDLING PROCEDURES: STATIC SENSITIVITY
Please observe the following precautions to avoid damage: DMOS devices are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices.
3
ADVANC ED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
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