M A COM UF2810P Datasheet

an AMP company

RF MOSFET Power Transistor, IOW, 28V
100 - 500 MHz

Features

l N-Channel Enhancement Mode Device

l DMOS Structure
l Lower Capacitances for Broadband Operation
l Common Source Configuration
l Lower Noise Floor

l 100 MHz to 500 MHz Operation

Absolute Maximum Ratings at 25°C

UF281 OP

Electrical Characteristics at 25°C

Output Capacitance
Reverse Capacitance
Power Gain

Drain Efficiency
Load Mismatch Tolerance

* Per Side

pecifications Subject to Change Without Notice.

C

oss

0, - 2.4 pF VDs=28.0 V, F=l .O MHz’

GP

9D

VSWR-T - 203 -

5

PF

10 -

50 - %

dB

L 1 1% 1 246
N 1 3.61 1 4.37

V,,=28.0 V, I==1 .O MHz’

V,,=28.0 V, I,,,=1 00.0 mA, PO,,,=1 0.0 W, F=500 MHz
V,,=28.0 V, I,,=1 00.0 mA, P,& 0.0 W, F=500 MHz
V,,=28.0 V, IDo= 00.0 mA, Poe1 0.0 W, F=500 MHz

077 .097

1 J42 1 .I72

RF MOSFET Power Transistor, iOW, 28V

Typical Device impedance

UF281 OP

v2.00

Frequency (MHz)

100

300
500

&., (OHMS)

30.0 - i 150.0

15.0

- j 90.0

4.2 -

j 46.0

V,,=28 V, l,=jOO mA, P,,?lO.O Watts

Z,, is the series equwalent input impedance of the device from gate to gate.
Z

LOAD

is tbe optimum series equivalent load impedance as measured from drain to drain.

RF Test Fixture

z

LOAD (OHMS)

70.0 + i 110.0

55.0 + j

48.0 + j

80.0

50.0

P A R T S

Cl0

c5
cl

ii36

7, a 9 SQo PC

cu. 12 13,

1% 17

us

Cl6

zL3
Tt 2 3

L4 lo

L7, 9
ue

l-3, 4
LS,6

01

27 PC
30 PF

6.8 pr
15 PC

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loo mr4 P5 v.
UK Mw 25 V.
250 5 SO Du SwdIGID COAX
7 TURNS 5 NO. 22 AVG VIRE
1s TURNS 5 NJ. 22 AVG vm
35’ OF SO OHN TRANSNISSIDN IDE
.7v 5 50 pE( T-W LINE
1~OFSOOHNlRANSNISSIONLIM

lF281OP

L I ST