M A COM UF28100V Datasheet
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RF MOSFET Power Transistor, IOOW, 28V
100 - 500 MHz
Features
l N-Channel Enhancement &lode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l High Saturated Output Power
l Lower Noise Figure Than Competitive Devices
Absolute Maximum Ratings at 25°C
I Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
JunctionTemperature
Storage Temperature
Thermal Resistance
( Symbol 1 Rating (
T
V
V
‘DS
PD
TJ
8
DS
GS
sic
IP
65
20
12
250
200
-55 to +150
0.7
UF281 OOV
v2.00
Units
V
V
A
W
“C
“C
“crw
Electrical Characteristics at 25°C
_____.._~~
Parameter
Drain-Source Breakdown Voltage
Drain-Source LeakageCurrent
Gate-Source Leakage Current
Gate Threshold Voltage
ForwardTransconductance
input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
.
Drain Efficiency
Load Mismatch Tolerance
- Per Side
Specifications Subject to Change Wiihout Notice.
M/A-COM, Inc.
Symbol
Min Max
BV,,, 65 -
I
DSS
‘GSS
V
GSIW
GM
c -
15s
C
ass
C
RSS
GP
2.0
1.5 -
10 -
50 -
VSWR-T -
Units
V,.=O.O V. I& 5.0 mA
V
3.0 mA
,
) 3.0 ] fl 1 v,,=2ov, vDs=o.o v
I
6.0 V
135 pF
90
24 pF
3O:l -
V,,=28.0 V, V,,=O.O V’
,
I
V,,=lO.O V, 1,,=300.0 mA‘
V,,=10.0 V, 1,,=3000.0 mA, AV,,=l .O V, 80 us Pulse’
S
V,,=28.0 V, F=l .O MHz’
V,,=28.0 V, F=l .O MHz’
PF
V,,=28.0 V, F=l .O MHz’
V,,=28.0 V, 1,,=600.0 mA, P,,$OO.O W, F=SOO MHz
dB
V,,=28.0 V, 1,,=600.0 mA, P,,,=lOO.O W. F=500 MHZ
%
V,,=28.0 V, lDD=800.0 mA,
lest Conditions
PbbylOO.0 W, F=500 MHz
RF MOSFET Power Transistor, lOOW, 28V
Typical Broadband Performance Curves
UF281 OOV
v2.00
POWER OUTPUT vs SUPPLY VOLTAGE
120
P&O W I,,=600 mA F&O0 MHz
80
EFFICIENCY vs FREQUENCY
P,,=lO W I,,=600 mA (Push-Pull Device)
loo
100 200 300 400 500 14 16 20 24 26 22
FREQUENCY (MHz)
0
SUPPLY VOLTAGE(V)
POWER OUTPUT vs POWER INPUT
V,,=28 V I,,=600 mA (Push-Pull Device)
Specifications Subject to Change Without Notice.
2 4 6 8 10 12
POWER INPUT(W)
M/A-COM, Inc.
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